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IGW50N60T: Low Loss Igbt: Igbt in Trenchstop ™ and Fieldstop Technology
IGW50N60T: Low Loss Igbt: Igbt in Trenchstop ™ and Fieldstop Technology
TRENCHSTOP™ Series
C
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
G
Short circuit withstand time 5s E
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior PG-TO247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage, Tj ≥ 25C VCE 600 V
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire IC 90
A
TC = 100C 64
Pulsed collector current, tp limited by Tjmax ICpul s 150
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 150
Gate-emitter voltage VGE 20 V
2)
Short circuit withstand time
tSC 5 s
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C Ptot 333 W
Operating junction temperature Tj -40...+175
Storage temperature Tstg -55...+150 C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.45 K/W
junction – case
Thermal resistance, RthJA 40
junction – ambient
Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 3140 - pF
Output capacitance Coss V G E = 0V , - 200 -
Reverse transfer capacitance Crss f= 1 MH z - 93 -
Gate charge QGate V C C = 48 0 V, I C =5 0 A - 310 - nC
V G E = 15 V
Internal emitter inductance LE PG - T O - 2 2 0- 3 - 1 - 7 - nH
measured 5mm (0.197 in.) from case PG - T O - 2 4 7- 3 - 2 1 - 13 -
1)
Short circuit collector current IC(SC) V G E = 15 V ,t S C 5 s - 458.3 - A
V C C = 4 0 0 V,
T j 1 50 C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
t p =2µs
140A 100A
120A
10µs
IC, COLLECTOR CURRENT
40A Ic
1ms
20A Ic 1A DC 10ms
0A
100Hz 1kHz 10kHz 100kHz
1V 10V 100V 1000V
90A
300W
80A
70A
Ptot, POWER DISSIPATION
250W
60A
200W
50A
150W 40A
30A
100W
20A
50W 10A __ Icmax
--- max. current limited by bondwire
0A
0W
25°C 50°C 75°C 100°C 125°C 150°C 25°C 50°C 75°C 100°C 125°C 150°C
120A 120A
V G E =20V V G E =20V
100A 100A
IC, COLLECTOR CURRENT
20A 20A
0A 0A
0V 1V 2V 3V 0V 1V 2V 3V 4V
2.5V IC =100A
80A
IC, COLLECTOR CURRENT
2.0V
60A
I C =50A
1.5V
40A
1.0V IC =25A
20A T J =175°C
0.5V
25°C
0A
0V 2V 4V 6V 8V 0.0V
0°C 50°C 100°C 150°C
t d(off)
t d(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns tr
tf
100ns
tf
t d(on)
tr
10ns t d(on)
10ns
0A 20A 40A 60A 80A
7V
t d(off)
6V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
m ax.
typ.
5V
t, SWITCHING TIMES
100ns
4V m in.
tf
tr 3V
2V
t d(on)
1V
10ns
25°C 50°C 75°C 100°C 125°C 150°C 0V
-50°C 0°C 50°C 100°C 150°C
6.0mJ
Eon* 4.0m J
4.0mJ 3.0m J
Eoff E off
2.0m J
2.0mJ
E on *
1.0m J
0.0mJ 0.0m J
0A 20A 40A 60A 80A
3.0mJ
3m J E on *
2.0mJ E ts *
Eoff
2m J
E off
1.0mJ
Eon*
1m J
0.0mJ 0m J
25°C 50°C 75°C 100°C 125°C 150°C 300V 350V 400V 450V 500V 550V
C iss
15V
VGE, GATE-EMITTER VOLTAGE
1nF
120V
c, CAPACITANCE
480V
10V
C oss
5V
100pF
C rss
0V
0nC 100nC 200nC 300nC
0V 10V 20V 30V 40V
12µs
800A
IC(sc), short circuit COLLECTOR CURRENT
700A 10µs
600A
8µs
500A
6µs
400A
300A 4µs
200A
2µs
100A
0µs
0A 10V 11V 12V 13V 14V
12V 14V 16V 18V
D=0.5
ZthJC, TRANSIENT THERMAL IMPEDANCE
-1 0.2
10 K/W
0.1
R,(K/W) , (s)
0.18355 7.425*10-2
0.05 0.12996 8.34*10-3
0.09205 7.235*10-4
0.03736 1.035*10-4
0.00703 4.45*10-5
-2 0.02 R1 R2
10 K/W
0.01
C 1 = 1 /R 1 C 2 = 2 /R 2
single pulse
i,v
tr r
IF tS tF
QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m
1 2 n
r1 r2 rn
Tj (t)
p(t)
r1 r2 rn
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
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types in question, please contact the nearest Infineon Technologies Office.
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