B77 SGS-THOMSON IRF 720/FI-721/FI JF, MICROELECTRONICS IRF 722/FI-723/Fl N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vosa_| Rojo) | to ® IRF720 400 V 180 | 33A IRF720F1_| 400 V 180 258 IRF721 350 V 180 33A a IRF721F1_ | 350 V 180 | 25A A> 1AF722 400 V 250 | 28a IRF722F1_| 400 V 250 | 20a IRF723 350 V 250 28A NN IRF723FI_ | 350 V 250 2.08 * HIGH VOLTAGE - FOR OFF LINE APPLICATIONS * ULTRA FAST SWITCHING To-220 ISOWATT220 * EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: * ELECTRONIC LAMP BALLAST 0 ey INTERNAL SCHEMATIC N- channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switch- ing times make these POWER MOS transistors ideal for high speed switching applications. Appli- Cor cations include offline use, constant current source, ultrasonic equipment and switching pow- ers supplies start-up circuits. ta ABSOLUTE MAXIMUM RATINGS IRF 0-220 920 2 1 ra yao 728 ISOWATT220 720F\_721F1_722Fi_723Fl Vos *. _ Drain-source voltage (Vas =0) 400° 350 400 350 Vv Vpan * — Drain-gate voltage (Res = 20 Ka) 400 350 400 © 350 v Vos Gate-source voltage £20 v low (*) Drain current (pulsed) ago ceit "1 A lou Drain inductive current, clamped (L= 100 wH) 09 sean eee 1 A 720 «721 «722 «(723 ly Drain current (cont.) at T,= 25°C a9 69) 28 2e A lp Drain current (cont.) at T;= 100°C Wee dee 8 ete A 720FI 721Fl 722Fl 723F1 Ip" Drain current (cont,) at T,= 25°C Opto ue 2 A Ipt Drain current (cont.) at T= 100°C (Sets note A 70-220 ISOWATT220 Pt Total dissipation at T, <25°C 50 30 w * erating factor 0.40 0.24 wiec ie Storage temperature ~55 to 150 °C qu Max. operating junction temperature 150 °c * T= 25°C to 125°C {*) Aepetitive Rating: Pulse width limited by max junction temperature. = See note on ‘SOWATT220 on this datasheet. June 1988 16 307IRF 720/FI - 721/FI - 722/Fl - 723/FI THERMAL DATA* To.220 | isowaTT220 Fin case Thermal resistance junction-case max 2.50! 416 °ow Fics” Thermal resistance case-sink yp 05 °ow Riyane Thermal resistance junction-ambient max 80 ecw 1 Maximum lead temperature for soldering purpose 300 °C ELECTRICAL CHARACTERISTICS (T,.,,= 25°C unless otherwise specified) Parameters Test Conditions Min. | Typ. | Max. | Unit OFF Voor) oss Drain-source Jy= 250 yA Veg= 0 breakdown voltage | for 1RF720/722/720F1/722F 400 v for (RF721/723/721F1/723F1 350 v loss Zero gate voltage Vps= Max Rating 250 | uA drain current (Vgg=0) | Vps= Max Rating x 0.8 T,= 125°C 1000] vA loss Gate-body leakage | Vgg= #20 V £500/ nA current (Vps = 0) ON ** Vos itn, Gate threshold voltage} Vos= Ves ly= 250 pA 2 4iyv 'ojon) -On-state drain current | Vog> Ip (on) X Rosion, max Vas=10 V for IRF720/721/720F1/721F1 33 A for IRF722/723/722FUU723F | 28 A Rios (on) Static drain-source | Vgg= 10 V Ip= 184 on resistance for 1RF720/721/720F1/721Fl 18 | 9 for 1RF722/723/722F1/723F| 25] 0 DYNAMIC ——F Qs ** Forward Vps> 'p on * Ros fon) max 1.0 mho transconductance ig= 1.88 Cys Input capacitance 600 | pF Coss Output capacitance | Vpg= 25 V f= 1 MHz 200 | pF Cie“ Reverse transfer Ves= 0 40 | pF capacitance | SWITCHING tao) Tusm-on time Vpo= 175 V Ip= 158 40 | ns t Rise time Ry= 500 50 | ns tao Turn-off delay time (see test circuit) 100 | ns Fall time 50 | ns Q, Total Gate Charge | Veg= 10 V 33A 15 | nc Vps= Max Rating x 0.8 (see test circuit) | 2a 457, SES:THOMSON ewe 308IRF 720/Fi - 721/Fl - 722/Fl - 723/F1 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions Min, | Typ. | Max. | Unit | SOURCE DRAIN DIODE Isy _ Source-drain current 33 | A \Som (*) Source-drain current 13 | A (pulsed) Vso Forward on voltage _| Isp= 3.3. A Vos= 0 16 [Vv te Reverse recovery 450 ns time Q, Reverse recovered | Igg= 3.3.A difdt = 100 Alus 34 ue charge ** Pulsed: Pulse duration < 300 as, duty cycle < 1.5% (*) Repetitive Rating: Pulse width limited by max junction temperature = See note on ISOWATT220 in this datasheet Safe operating areas {standard package) Output characteristics ‘Thermal impedance (standard package) Derating curve (standard package) x + ot | Output characteristics RS we Tea Transter characteristics ty Giz S&S:THOMSON YA, srronaemeatsIRF 720/Fl - 721/Fl - 722/F1 - 723/F1 Transconductance Static drain-source on Maximum drain current vs resistance temperature ia a on sha Aa , r 2 Plea : Ae 44 4 t : cscegt ie 7 Gate charge vs gate-source Capacitance variation Normatized breakdown voltage voltage vs temperature Vest eee er T “annssp Traneiseh ~ a oo i 6 o * o : » ° . Normalized on resistance Source-drain diode forward vs temperature characteristics sol 0 a6. &j SGS-THOMSON MYA, icrocizerenatcsIRF 720/FI - 721/Fl - 722/F1 - 723/F1 Clamped inductive test circuit AR? tp To o8r4N Mae Bea aur LT I E4205 Boss. Fc=0.75 BYpss Switching times test circuit Yoo AQWUST Ry TO OBTAIN SPECIFIED Ys out PULSE GENERATOR seme Clamped inductive waveforms Gate charge test circuit ‘CURRENT REGULATOR Vos ‘CURRENT CURRENT SAMPLING SAMPLING RESISTOR —=RESISTOR setae 516 autIRF 720/Fl - 721/Fl - 722/Fl - 723/Ft ISOWATT220 PACKAGE CHARACTERISTICS AND APPLICATION. ISOWATT220 is fully isolated to 2000V de. Its ther- mal impedance, given in the data sheet, is optimi- sed to give efficient thermal conduction together with excellent electrical isolation. The structure of the case ensures optimum distan- ces between the pins and heatsink. The ISOWATT220 package eliminates the need for ex- ternal isolation so reducing fixing hardware. Accu- rate moulding techniques used in manufacture assure consistent heat spreader-to-heatsink capa- citance. JSOWATT220 thermal performance is better than that of the standard part, mounted with a 0.1mm mica washer. The thermally conductive plastic has a higher breakdown rating and is less fragile than mica or plastic sheets. Power derating for ISOWATT220 packages is determined by: TZ-Te Pp= Rn from this lpmax for the POWER MOS can be cal- culated: Po tomas A | g— 2 —— 'DS{on) (at 150°C) ISOWATT DATA Sate operating areas Thermal impedance THERMAL IMPEDANCE OF ISOWATT220 PACKAGE Fig. 1 illustrates the elements contributing to the thermal resistance of transistor heatsink assembly, using ISOWATT220 package. The total thermal resistance Ry, gor is the sum of each of these elements. The transient thermal impedance, Z,, for different pulse durations can be estimated as follows: 1- for a short duration power putse fess than 1ms; Zn< Royo 2. for an intermediate power pulse of Sms to 50ms: Zn= Pic 3 - for long power pulses of the order of 500ms or greater: Zn= Bic + Pines + Rintis-amb Itis often possibile to discern these areas on tran- sient thermal impedance curves. Fig. 1 Reru-c Renc-Hs Rrnits-amb Wann Derating curve ait te | tl oe 85 75 WO 5 Tene 86 KT, SGS- THOMSON hin