Spin–orbit torque switching of the

antiferromagnetic state in polycrystalline

Mn3Sn/Cu/heavy metal heterostructures
Cite as: AIP Advances 11, 045110 (2021); https://doi.org/10.1063/9.0000229
Submitted: 15 October 2020 . Accepted: 26 February 2021 . Published Online: 06 April 2021

Hanshen Tsai, Tomoya Higo, Kouta Kondou, Ayuko Kobayashi, Takafumi Nakano, Kay Yakushiji, Shinji
Miwa, Yoshichika Otani, and Satoru Nakatsuji

COLLECTIONS

Paper published as part of the special topic on 65th Annual Conference on Magnetism and Magnetic Materials

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AIP Advances 11, 045110 (2021); https://doi.org/10.1063/9.0000229 11, 045110

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 AIP Advances ARTICLE scitation.org/journal/adv

Spin–orbit torque switching

of the antiferromagnetic state in polycrystalline
Mn3Sn/Cu/heavy metal heterostructures
Cite as: AIP Advances 11, 045110 (2021); doi: 10.1063/9.0000229
Presented: 2 November 2020 • Submitted: 15 October 2020 •
Accepted: 26 February 2021 • Published Online: 6 April 2021

Hanshen Tsai,1,2 Tomoya Higo,1,2 Kouta Kondou,2,3 Ayuko Kobayashi,1 Takafumi Nakano,2,4 Kay Yakushiji,2,4
Shinji Miwa,1,2,5 Yoshichika Otani,1,2,3,5 and Satoru Nakatsuji1,2,5,6,a)

AFFILIATIONS
1
Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
2
CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
3
RIKEN, Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan
4
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba,
Ibaraki 305-8568, Japan
5
Trans-scale Quantum Science Institute, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
6
Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan

Note: This paper was presented at the 65th Annual Conference on Magnetism and Magnetic Materials.
a)
Author to whom correspondence should be addressed: satoru@phys.s.u-tokyo.ac.jp

ABSTRACT
The spin-orbit torque (SOT) using spin Hall effect has led to significant innovations in spintronics. Recently, SOT switching of an antifer-
romagnetic state of the Weyl semimetal Mn3 Sn is realized by passing electrical current into Mn3 Sn/heavy metal heterostructures. Here we
demonstrate the SOT switching of Hall resistance in polycrystalline Mn3 Sn/Pt, Mn3 Sn/W and Mn3 Sn/Cu/Pt, Mn3 Sn/Cu/W heterostruc-
tures. Our experiments indicate that the sign of the spin Hall angle of heavy metals determines the direction of magnetic switching
in both devices with and without Cu insertion layer, being consistent with the SOT mechanism. In Mn3 Sn/Pt and Mn3 Sn/W bilayer
devices, the critical current density of electrical switching is ∼1011 A/m2 in heavy metals. In addition, we find that the volume fraction of
the switched Mn3 Sn domain is nearly the same in devices with and without Cu layer, which indicates that the spin current generated
from the spin Hall effect of Pt or W contributes dominantly to the SOT compared to possible interfacial effects at Mn3 Sn/heavy metal
interface.
© 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license
(http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/9.0000229

I. INTRODUCTION
Electrical control of magnetization through spin-transfer
torques (STT) or spin-orbit torques (SOT) has enabled signifi-
cant innovations in the development of non-volatile memories as
well as in basic spintronic research using ferromagnets.1–7 In the
advent of big data, Internet of Things (IoT) and artificial intelli-
gence (AI), there are growing demands for the higher density and
faster operation speed of the memory devices. With this perspec-
tive, antiferromagnets have attracted significant attention because
their small stray fields could prevent the perturbation between
neighboring cells and the spin dynamics in much faster in anti-
ferromagnets than ferromagnets.8–11 The recent intensive studies
have led to the breakthrough of the electric-current control of anti-
ferromagnetic (AF) sublattices detected by the anisotropic magne-
toresistance (AMR).12–14 Integrating these emerging technologies
with existing spintronics is essential to find further advancement
to induce electrical switching in an antiferromagnet via STT or
SOT by injecting spin current through the interface with other
materials.13,15–18 Besides, it would be more beneficial to use lin-
ear responses to magnetization for the readout such as magneto-
conductance, anomalous Hall effects (AHE), and Faraday/Kerr

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effects, than the currently available quadratic responses to magne-
tization (e.g. AMR, quadratic magneto-optical effects).9–11,19,20 For
example, such a linear-response may allow a polycrystalline form of
an antiferromagnet to serve as a switching device.
Meanwhile, recent development in the understanding of topo-
logical characteristics in electronic band structure11,21–23 has led to
the discovery of the AHE in chiral antiferromagnets Mn3 X (X = Sn,
Ge, Ga, Ir, Pt, and Rh). This has shown that a large linear transverse
response such as AHE and anomalous Nernst effect (ANE) may exist
in the antiferromagnets in the absence of magnetization due to the
Berry curvature in momentum space11,24–29 Moreover, a successful
thin-film growth has enabled the electrical detection of the AF state
by the Hall resistance even in a polycrystalline sample.30
Recently, magnetic SOT switching of the antiferromagnet
Mn3 Sn has been performed by applying electrical current in
Ru/Mn3 Sn/Pt or W heterostructures,31 where the spin Hall angle
of Pt and W layer determine the switching direction. On the other
hand, in addition to the spin Hall effect, interfacial effects at the fer-
romagnets/heavy metals interface can also generate notable field-like
torque on the magnetization.32 To estimate the possible interfacial
effect in the SOT switching at Mn3 Sn/heavy metals heterostruc-
tures, here we perform the electrical switching measurement of
Ru/Mn3 Sn/Pt or W and Ru/Mn3 Sn/Cu/Pt or W and compare the
volume fraction of the switched Mn3 Sn domain in each sample.
Mn3 Sn is one of the best studied among various kagome-based met-
als with nontrivial topology of band structure.11,33,34 The hexagonal
D019 structure of Mn3 Sn has the ABAB-stacking of a (0001)-kagome
layer of Mn, and the associated geometrical frustration leads to a
three-sublattice non-collinear AF ordering of Mn spins below the
Néel temperature T N ∼ 430 K35,36 (Fig. 1(a)). The AF spin texture
consist a ferroic ordering of a cluster magnetic octupole,37 which
leads to the large linear responses, such as AHE, ANE, and magneto-
optical Kerr effect (MOKE), instead of a tiny uncompensated mag-
netization M ∼ 0.006 μB /f.u. induced by the spin canting within
the (0001)-plane.11,38,39 Moreover, the material hosts a topological
magnetic Weyl semimetal state,29,38–40 leading to the large responses
robust against disorder and thermal fluctuations.
II. EXPERIMENTAL METHODS
To exert SOT on Mn3 Sn by the spin Hall effect from
the heavy metals, we prepare the thin films with heavy met-
als Pt or W in the heterostructures: Ru(2)/Mn3 Sn(40)/Pt(7.2) or
W(7.2)/AlOx (5) (in nm) deposited on a thermally oxidized Si sub-
strate; in addition, we prepare the stacks with Cu insertion layer:
Ru(2)/Mn3 Sn(40)/Cu(5)/Pt or W(7.2)/AlOx (5) (Fig. 1(b)). Ru and
Mn3 Sn are deposited at room temperature using a dc magnetron
sputtering machine under the pressure ∼5 × 10−7 Pa. After the fabri-
cation of the Mn3 Sn layer, the stacks are annealed at 450 ○ C for 0.5 h.
After cooling to room temperature, we grow the Cu, Pt, and/or W,
and AlOx layer by molecular beam epitaxy (MBE) with the base pres-
sure of below 2 × 10-8 Pa. The pressure keeps in situ conditions in
the transfer from the sputter chamber to the MBE chamber. The
composition of the Mn3 Sn layer is Mn3.01(2) Sn0.99(2) , determined by

FIG. 1. (a) Crystal structure and spin structure of the antiferromagnet Mn3 Sn. The large blue and red spheres (small gray and black spheres) represent Mn atoms (Sn
atoms). The Mn magnetic moments (blue and red arrows) lie within the kagome-layer with the AB-AB stacking sequence and form the inverse triangular spin structure at
room temperature. On the kagome bilayers, the spin structure can be considered as a ferroic order of cluster magnetic octupoles (purple arrow). (b) Schematic illustration
of Mn3 Sn/heavy metal or Mn3 Sn/Cu/heavy metal heterostructures. The unit is nm. (c) Schematic image of Mn3 Sn/heavy metal or Mn3 Sn/Cu/heavy metal devices and the
measurement setup. The samples are fabricated in 16 μm × 96 μm Hall bar structure and contacted with Au/Ti electrodes. (d) The measurement sequence of the electrical
switching measurement.

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scanning electron microscopy-energy dispersive X-ray spectrometry
(SEM-EDX).
The multilayer thin films are fabricated into a 16 μm × 96 μm
Hall bar structure by photolithography and contacted with Ti/Au
electrodes (Fig. 1(c)). To measure the AHE, 0.2 mA read current
I read is applied in x-direction and the Hall voltage is detected in y-
direction. In the field switching measurement, an out-of-plane mag-
netic field H z is applied in z-direction, while in electrical switching
measurement a bias field H x and a write current I write is applied in x-
direction. Figure 1(d) shows the measurement sequence of the elec-
trical switching measurement. The temperature in all measurements
is at room temperature ∼293K. A bias field μ0 H x = 0.1T is applied in
the whole electrical switching measurement. Firstly, a 100 ms write
current I write is applied and followed by a 0.2 mA read current I read ,
and then the Hall voltage V H is measured after a wait time of 600 ms
to cool down the Mn3 Sn sample to the room temperature.31
III. EXPERIMENTAL RESULTS
Firstly, we measure the anomalous Hall resistance RH as a
function of the out-of-plane magnetic field H z to estimate the
population of switchable domains at the out-of-plane direction
FIG. 2. Hall resistance RH versus out-of-plane magnetic field Hz at room temperature in (a) Mn3 Sn(40)/Pt(7.2), (b) Mn3 Sn(40)/W(7.2), (c) Mn3 Sn(40)/Cu/(5)/Pt(7.2), and (d)
Mn3 Sn(40)/Cu/(5)/W(7.2) devices. The unit of thickness is nm.
AIP Advances 11, 045110 (2021); doi: 10.1063/9.0000229
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(Fig. 2). A clear hysteresis of RH is observed with the zero-field
change of ΔRH Field (= RH (+H z →0) RH (H z →0)) in four different
multilayer devices: (a) Mn3 Sn(40)/Pt(7.2), (b) Mn3 Sn(40)/W(7.2),
(c) Mn3 Sn(40)/Cu/(5)/Pt(7.2), and (d) Mn3 Sn(40)/Cu/(5)/W(7.2).
The results indicate that the +z-polarized(-z-polarized) magnetic
octupoles of Mn3 Sn correspond to a negative(positive) Hall resis-
tance, consistent with previous report.11,30 Compared to the Pt or
W devices without Cu layer, devices with Cu insertion layer show
∼5 times smaller Hall resistance. Calculated from the total resis-
tance of the devices with and without Cu insertion layer measured
by a two-probe method, the current flowing in Cu layer is esti-
mated to be ∼60% of the total current. Using the simple model
for the shunting effect on AHE in the multilayer system by ignor-
ing the interface resistance,41,42 the AHE signal in devices with Cu
insertion layer are estimated to be ∼16% of the devices without
Cu layer , which is close to the 5 times difference observed in our
experiments.
Figures 3(a) and 3(b) show the results of the electrical switching
of RH in Mn3 Sn(40)/Pt(7.2) and Mn3 Sn(40)/W(7.2) devices. Here
we define ΔRH Current = RH (+I write →0) RH (I write →0). We find that sign
of ΔRH Current and the corresponding switching direction are oppo-
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FIG. 3. Write current Iwrite dependence of the Hall resistacne RH for (a) Mn3 Sn(40)/Pt(7.2), (b) Mn3 Sn(40)/W(7.2), (c) Mn3 Sn(40)/Cu/(5)/Pt(7.2), and (d)
Mn3 Sn(40)/Cu/(5)/Pt(7.2) devices. A bias field μ0 Hx = 0.1 T is applied in all electrical switching measurement. All measurements are performed at room temperature.
site in the Pt and W devices. This can be explained by the different
sign of spin Hall angle in Pt (θSH > 0) and W (θSH < 0), being
consistent with previous report.31 The estimated switching current
density in Pt or W layer is ∼1011 A/m2 being comparable to the
SOT switching in ferromagnets and antiferromagnets.6,7,12–14 The
temperature of the devices under the similar write current density
in Mn3 Sn/Pt or W devices are reported to be ∼50K in our previ-
ous study using the samples prepared in the same method.31 On
the other hand, in addition to the SOT generated from spin Hall
effect, it has been reported that the Rashba spin-orbit coupling at
the interface of ferromagnets/heavy metal can also generate a field-
like torque on the magnetic moments.32 To check if such interfa-
cial effect at Mn3 Sn/Pt or W interface has notable contribution to
the SOT switching, we perform the electrical switching in Pt and
W devices with a Cu insertion layer (Fig. 3(c) and 3(d)). A clear
electrical switching is observed in both devices, while the shunting
effect of Cu layer and the smaller resistance of device drastically
decrease ΔRH Current , which is similar to the decrement of ΔRH Field .
Since the shunting effect should be the same when applying read
AIP Advances 11, 045110 (2021); doi: 10.1063/9.0000229
© Author(s) 2021
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current in both field and current switching measurement, we com-
pare the volume fraction of the switched domain of Mn3 Sn by
the ratio between the electrical switching and field switching Hall
resistance signal, ∣ΔRH Current /ΔRH Field ∣ (Table I). This ratio is 30%
and 27% in Mn3 Sn/Pt and Mn3 Sn/W devices, respectively, consis-
tent with previous report.31 We found that ∣ΔRH Current /ΔRH Field ∣ in
devices with Cu insertion layer are only slightly smaller than that
devices without Cu. This result indicates that the spin current gen-
erated from Pt or W layer can diffuse to the Mn3 Sn layer and exert
SOT on Mn3 Sn efficiently. The decay of spin current in Cu layer is
neglectable because the spin diffusion length of Cu at room temper-
ature is 1∼2 order larger than 5nm Cu thickness.43 The similar ratios
of ∣ΔRH Current /ΔRH Field ∣ in with and without Cu layer devices indicate
that the spin Hall effect in heavy metals contribute dominantly to the
SOT switching mechanism in Mn3 Sn compared to other interfacial
effects.
To summarize, we demonstrate the SOT switching of
the Hall resistance in polycrystalline Mn3 Sn/Pt, Mn3 Sn/W and
Mn3 Sn/Cu/Pt, Mn3 Sn/Cu/W heterostructures. The polarity of the
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TABLE I. ∣ΔRH Field ∣, ∣ΔRH Current ∣, and ∣ΔRH Current /ΔRH Field ∣ of four different samples: 9
T. Jungwirth, X. Marti, P. Wadley, and J. Wunderlich, Nat. Nanotech. 11,
Mn3 Sn/Pt, Mn3 Sn/Cu/Pt, Mn3 Sn/W, and Mn3 Sn/Cu/W. 231–241 (2016).
10
V. Baltz, A. Manchon, M. Tsoi, T. Moriyama, T. Ono, and Y. Tserkovnyak, Rev.
∣ΔRH Field ∣ ∣ΔRH Current ∣ Mod. Phys. 90, 015005 (2018).
∣ΔRH Current /ΔRH Field ∣
11
Samples (mΩ) (mΩ) S. Nakatsuji, N. Kiyohara, and T. Higo, Nature 527, 212–215 (2015).
12
P. Wadley, B. Howells, J. Z̀elezný, C. Andrews, V. Hills, R. P. Campion, V.
Mn3 Sn/Pt 143 43 30% Novák, K. Olejník, F. Maccherozzi, S. S. Dhesi, S. Y. Martin, T. Wagner, J. Wun-
Mn3 Sn/Cu/Pt 31 8.7 28% derlich, F. Freimuth, Y. Mokrousov, J. Kuneš, J. S. Chauhan, M. J. Grzybowski,
Mn3 Sn/W 369 98 27% A. W. Rushforth, K. W. Edmonds, B. L. Gallagher, and T. Jungwirth, Science 351,
587–590 (2016).
Mn3 Sn/Cu/W 69 16 23% 13
S. Yu. Bodnar, L. Šmejkal, I. Turek, T. Jungwirth, O. Gomonay, J. Sinova, A. A.
Sapozhnik, H.-J. Elmers, M. Kläui, and M. Jourdan, Nat. Commun. 9, 348 (2018).
14
M. Meinert, D. Graulich, and T. Matalla-Wagner, Phys. Rev. Appl. 9, 064040
(2018).
magnetic switching in both devices with and without a Cu insertion 15
J. Z̀elezný, Y. Zhang, C. Felser, and B. Yan, Phys. Rev. Lett. 119, 187204 (2017).
layer are determined by the sign of the spin Hall angle of the heavy 16
J. Liu and L. Balents, Phys. Rev. Lett. 119, 087202 (2017).
metals (Pt (θSH > 0) and W (θSH < 0)), being consistent with the SOT 17
T. Moriyama, K. Oda, T. Ohkochi, M. Kimata, and T. Ono, Sci. Rep. 8, 14167
mechanism. To estimate the volume fraction switched by electrical (2018).
current, we calculate the ratio between current switching Hall resis- 18
M. Kimata, H. Chen, K. Kondou, S. Sugimoto, P. K. Muduli, M. Ikhlas, Y.
tance ΔRH Current and field switching Hall resistance ΔRH Field , and Omori, T. Tomita, A. H. MacDonald, S. Nakatsuji, and Y. Otani, Nature 565,
find that the ∣ΔRH Current /ΔRH Field ∣ values are nearly the same in the Pt 627–630 (2019).
19
X. Marti, I. Fina, C. Frontera, J. Liu, P. Wadley, Q. He, R. J. Paull, J. D. Clarkson,
and W devices with and without Cu layer. Our result indicates that
J. Kudrnovský, I. Turek, J. Kuneš, D. Yi, J.-H. Chu, C. T. Nelson, L. You, E. Aren-
the spin current generated by the spin Hall effect of Pt or W layer holz, S. Salahuddin, J. Fontcuberta, T. Jungwirth, and R. Ramesh, Nat. Mater. 13,
contributes dominantly to the SOT compared to possible interfacial 367–374 (2014).
effects at Mn3 Sn/heavy metal interface. 20
V. Saidl, P. Němec, P. Wadley, V. Hills, R. P. Campion, V. Novák, K. W.
Edmonds, F. Maccherozzi, S. S. Dhesi, B. L. Gallagher, F. Trojánek, J. Kuneš, J.
AUTHORS’ CONTRIBUTIONS Z̀elezný, P. Malý, and T. Jungwirth, Nat. Photon. 11, 91–96 (2017).
21
N. Nagaosa, J. Sinova, S. Onoda, A. H. MacDonald, and N. P. Ong, Rev. Mod.
H.T. and T.H. contributed equally to this work. Phys. 82, 1539–1592 (2010).
22
D. Xiao, M.-C. Chang, and Q. Niu, Rev. Mod. Phys. 82, 1959–2007 (2010).
23
Y. Machida, S. Nakatsuji, S. Onoda, T. Tayama, and T. Sakakibara, Nature 463,
210–213 (2010).
24
ACKNOWLEDGMENTS H. Chen, Q. Niu, and A. H. MacDonald, Phys. Rev. Lett. 112, 017205 (2014).
25
N. Kiyohara, T. Tomita, and S. Nakatsuji, Phys. Rev. Applied 5, 064009 (2016).
We thank D. Nishio-Hamane for SEM-EDX measurements. 26
A. K. Nayak, J. E. Fischer, Y. Sun, B. Yan, J. Karel, A. C. Komarek, C. Shekhar, N.
This work is partially supported by CREST(JPMJCR18T3), Japan Kumar, W. Schnelle, J. Kübler, C. Felser, and S. S. P. Parkin, Sci. Adv. 2, e1501870
Science and Technology Agency (JST), by Grants-in-Aids for Sci- (2016).
entific Research on Innovative Areas (15H05882, 15H05883) from 27
Z. H. Liu, Y. J. Zhang, G. D. Liu, B. Ding, E. K. Liu, H. M. Jafri, Z. P. Hou, W. H.
the Ministry of Education, Culture, Sports, Science, and Technology Wang, X. Q. Ma, and G. H. Wu, Sci. Rep. 7, 515 (2017).
of Japan, and by Grants-in-Aid for Scientific Research (16H06345, 28
Z. Q. Liu, H. Chen, J. M. Wang, J. H. Liu, K. Wang, Z. X. Feng, H. Yan, X. R.
18H03880, 19H00650). Wang, C. B. Jiang, J. M. D. Coey, and A. H. MacDonald, Nat. Electron. 1, 172–177
(2018).
29
DATA AVAILABILITY M. Ikhlas, T. Tomita, T. Koretsune, M.-T. Suzuki, D. Nishio-Hamane, R. Arita,
Y. Otani, and S. Nakatsuji, Nat. Phys. 13, 1085–1090 (2017).
30
The data that support the findings of this study are available T. Higo, D. Qu, Y. Li, C. L. Chien, Y. Otani, and S. Nakatsuji, Appl. Phys. Lett.
from the corresponding author upon reasonable request. 113, 202402 (2018).
31
H. Tsai, T. Higo, K. Kondou, T. Nomoto, A. Sakai, A. Kobayashi, T. Nakano,
K. Yakushiji, R. Arita, S. Miwa, Y. Otani, and S. Nakatsuji, Nature 580, 608–613
REFERENCES
(2020).
1 32
J. C. Slonczewski, J. Magn. Magn. Mater. 159, L1–L7 (1996). J. Kim, J. Sinha, M. Hayashi, M. Yamanouchi, S. Fukami, T. Suzuki, S. Mitani,
2 and H. Ohno, Nat. Mater. 12, 240–245 (2013).
L. Berger, Phys. Rev. B 54, 9353 (1996).
3 33
E. B. Myers, D. C. Ralph, J. A. Katine, R. N. Louie, and R. A. Buhrman, Science L. Ye, M. Kang, J. Liu, F. von Cube, C. R. Wicker, T. Suzuki, C. Jozwiak, A.
285, 867–870 (1999). Bostwick, E. Rotenberg, D. C. Bell, L. Fu, R. Comin, and J. G. Checkelsky, Nature
4 555, 638–642 (2018).
S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár,
34
M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science 294, 1488–1495 E. Liu, Y. Sun, N. Kumar, L. Muechler, A. Sun, L. Jiao, S.-Y. Yang, D. Liu, A.
(2001). Liang, Q. Xu, J. Kroder, V. Süß, H. Borrmann, C. Shekhar, Z. Wang, C. Xi, W.
5 Wang, W. Schnelle, S. Wirth, Y. Chen, S. T. B. Goennenwein, and C. Felser, Nat.
C. Chappert, A. Fert, and F. N. Van Dau, Nat. Mater. 6, 813–827 (2007).
6
I. M. Miron, K. Garello, G. Gaudin, P.-J. Zermatten, M. V. Costache, S. Auffret, Phys. 14, 1125–1131 (2018).
35
S. Bandiera, B. Rodmacq, A. Schuhl, and P. Gambardella, Nature 476, 189–193 S. Tomiyoshi and Y. Yamaguchi, J. Phys. Soc. Jpn. 51, 2478–2486 (1982).
36
(2011). T. Nagamiya, S. Tomiyoshi, and Y. Yamaguchi, Solid State Commun. 42,
7
L. Liu, C.-F. Pai, Y. Li, H. W. Tseng, D. C. Ralph, and R. A. Buhrman, Science 385–388 (1982).
336, 555–558 (2012). 37
M. T. Suzuki, T. Koretsune, M. Ochi, and R. Arita, Phys. Rev. B 95, 094406
8
A. H. MacDonald and M. Tsoi, Phil. Trans. R. Soc. A 369, 3098–3114 (2011). (2017).

AIP Advances 11, 045110 (2021); doi: 10.1063/9.0000229 11, 045110-5

© Author(s) 2021
 AIP Advances ARTICLE scitation.org/journal/adv

38
T. Higo, H. Man, D. B. Gopman, L. Wu, T. Koretsune, O. M. J. van ’t Erve, Y.
P. Kabanov, D. Rees, Y. Li, M.-T. Suzuki, S. Patankar, M. Ikhlas, C. L. Chien, R.
Arita, R. D. Shull, J. Orenstein, and S. Nakatsuji, Nat. Photon. 12, 73–78 (2018).
39
H. Yang, Y. Sun, Y. Zhang, W.-J. Shi, S. S. P. Parkin, and B. Yan, New J. Phys.
19, 015008 (2017).
40
K. Kuroda, T. Tomita, M.-T. Suzuki, C. Bareille, A. A. Nugroho, P. Goswami,
M. Ochi, M. Ikhlas, M. Nakayama, S. Akebi, R. Noguchi, R. Ishii, N. Inami, K.
Ono, H. Kumigashira, A. Varykhalov, T. Muro, T. Koretsune, R. Arita, S. Shin, T.
Kondo, and S. Nakatsuji, Nat. Mater. 16, 1090–1095 (2017).
41
W. J. Xu, B. Zhang, Z. Wang, S. S. Chu, W. Li, Z. B. Wu, R. H. Yu, and X. X.
Zhang, Euro. Phys. J. B 65, 233 (2008).
42
X. Kou, J.-M. Schmalhorst, V. Keskin, and G. Reiss, J. Appl. Phys. 112, 093915
(2012).
43
T. Kimura, J. Hamrle, and Y. Otani, Phys. Rev. B 72, 014461 (2005).

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