2 3 2 3 2 3

2 27
1 4 1 4
1 4
T-
Anti-Paralle l P aralle l SO
APT2X100D40J APT2X101D40J
APT2X101D40J 400V 100A
IS OT OP ®
"UL Recognized"
file # E145592 APT2X100D40J 400V 100A

DUAL DIE ISOTOP® PACKAGE

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS
• Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses
-Switchmode Power Supply
-Inverters • Soft Recovery Characteristics • Low Noise Switching
• Free Wheeling Diode
-Motor Controllers
• Popular SOT-227 Package • Cooler Operation
-Converters • Low Forward Voltage • Higher Reliability Systems
• Snubber Diode
• Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power
• Induction Heating Density
• High Speed Rectifiers • Low Leakage Current

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Characteristic / Test Conditions APT2X101_100D40J UNIT

VR Maximum D.C. Reverse Voltage

VRRM Maximum Peak Repetitive Reverse Voltage 400 Volts

VRWM Maximum Working Peak Reverse Voltage

IF(AV) Maximum Average Forward Current (TC = 112°C, Duty Cycle = 0.5) 100
IF(RMS) RMS Forward Current (Square wave, 50% duty) 164 Amps

IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 1000

TJ,TSTG Operating and StorageTemperature Range -55 to 175 °C

STATIC ELECTRICAL CHARACTERISTICS

Symbol MIN TYP MAX UNIT
IF = 100A 1.3 1.5
VF Forward Voltage IF = 200A 1.6 Volts
IF = 100A, TJ = 125°C 1.2
VR = VR Rated 500
IRM Maximum Reverse Leakage Current μA
VR = VR Rated, TJ = 125°C
053-4007 Rev G 3-2011

1000
CT Junction Capacitance, VR = 200V 260 pF

Microsemi Website - http://www.microsemi.com

 DYNAMIC CHARACTERISTICS APT2X101_100D40J

Symbol Characteristic Test Conditions MIN TYP MAX UNIT

trr Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C - 37

F F R J
ns
trr Reverse Recovery Time - 50
IF = 100A, diF/dt = -200A/μs
Qrr Reverse Recovery Charge - 150 nC
VR = 268V, TC = 25°C
IRRM Maximum Reverse Recovery Current - 6 7 Amps
trr Reverse Recovery Time - 150 ns
IF = 100A, diF/dt = -200A/μs
Qrr Reverse Recovery Charge - 1050 nC
VR = 268V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 13 17 Amps
trr Reverse Recovery Time - 90 ns
IF = 100A, diF/dt = -800A/μs
Qrr Reverse Recovery Charge - 2100 nC
VR = 268V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 39 Amps

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

RθJC Junction-to-Case Thermal Resistance .42

°C/W
RθJA Junction-to-Ambient Thermal Resistance 20
1.03 oz
WT Package Weight
29.2 g

10 lb•in
Torque Maximum Terminal & Mounting Torque
1.1 N•m
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.

0.45
Z JC, THERMAL IMPEDANCE (°C/W)

0.40 0.9

0.35
0.7
0.30

0.25
0.5
Note:
0.20
P DM

t1
0.15 0.3
t2
0.10 t
0.1 Duty Factor D = 1 /t2
0.05 Peak T J = P DM x Z θJC + T C
SINGLE PULSE
θ

0.05
0
10-5 10-4 10-3 10-2 0.1 1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
053-4007 Rev G 3-2011
TYPICAL PERFORMANCE CURVES APT2X101_100D40J
300 160
200A
140

trr, REVERSE RECOVERY TIME

IF, FORWARD CURRENT 250 100A
120 50A
200
100

(ns)
(A)

150 80

60
100
TJ = 25°C 40
50 TJ = 125°C
TJ = 150°C TJ = -55°C 20
T =125°C
J
V =268V
0 0 R
0 0.5 1 1.5 2 0 200 400 600 800 1000
VF, ANODE-TO-CATHODE VOLTAGE (V) -diF /dt, CURRENT RATE OF CHANGE(A/μs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
2500 40
T =125°C 200A

IRRM, REVERSE RECOVERY CURRENT

T =125°C J
J
Qrr, REVERSE RECOVERY CHARGE

V =268V
V =268V
R 35 R
200A
2000 100A
30

25
1500
50A
(nC)

(A)
20

1000 100A 15
50A

10
500
5

0 0
0 200 400 600 800 1000 0 400 200
600 800 1000
-diF /dt, CURRENT RATE OF CHANGE (A/μs) -diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
1.4 200
Duty cycle = 0.5
T =150°C
Qrr 180 J
1.2
Kf, DYNAMIC PARAMETERS

trr 160
(Normalized to 800A/μs)

1.0 140

120
IF(AV) (A)

0.8 trr
100
0.6 IRRM 80

0.4 60
Qrr
40
0.2
20
0.0 0
0 25 50 75 100 125 150 25 50 75
100 125 150
TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
3000

2500
CJ, JUNCTION CAPACITANCE

2000
(pF)

1500

1000
053-4007 Rev G 3-2011

500

0
.3 1 10 100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
 APT2X101_100D40J
Vr

+18V diF /dt Adjust APT50M50L2LL

0V
D.U.T.
30μH trr/Qrr
Waveform

PEARSON 2878
CURRENT
TRANSFORMER

Figure 9. Diode Test Circuit

1 IF - Forward Conduction Current

1 4
2 diF /dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3 IRRM - Maximum Reverse Recovery Current.
5 0.25 IRRM
4 trr - Reverse Recovery Time, measured from zero crossing where diode 3
current goes from positive to negative, to the point at which the straight 2
line through IRRM and 0.25 IRRM passes through zero.

5 Qrr - Area Under the Curve Defined by IRRM and trr.

Figure 10, Diode Reverse Recovery Waveform and Definitions

SOT-227 Package Outline

11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M4 H100
H=4.8 (.187) (4 places )
H=4.9 (.193)
(4 places)

25.2 (0.992)
r = 4.0 (.157) 25.4 (1.000)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)

3.3 (.129) 1.95 (.077)

3.6 (.143) 2.14 (.084)
14.9 (.587) Anti-paralle l P aralle l
15.1 (.594)
APT2X100D40J APT2X101D40J
30.1 (1.185)
30.3 (1.193) Anode 2 Cathode 1 Cathode 1 Anode 1
38.0 (1.496)
38.2 (1.504)
053-4007 Rev G 3-2011

Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2