CNY64, CNY65, CNY66

Vishay Semiconductors

Optocoupler, Phototransistor Output, Very High Isolation Voltage

FEATURES
Top View • Rated recurring peak voltage (repetitive)
A C VIORM = 1450 Vpeak
CNY64
• Thickness through insulation  3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI  200
CNY65 • Compliant to RoHS Directive 2002/95/EC and in
C E
accordance to WEEE 2002/96/EC
V
D E
APPLICATIONS
Circuits for safe protective separation against electrical
17187-5 shock according to safety class II (reinforced isolation):
CNY66
17187-4
• for appl. class I - IV at mains voltage  300 V
• for appl. class I - IV at mains voltage  600 V
DESCRIPTION
• for appl. class I - III at mains voltage  1000 V according
The CNY64, CNY65, and CNY66 consist of a
to DIN EN 60747-5-2 (VDE 0884), suitable for:
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4 pin plastic package. - Switch-mode power supplies
The single components are mounted opposite one another, - Line receiver
providing a distance between input and output for highest - Computer peripheral interface
safety requirements of > 3 mm.
- Microprocessor system interface
VDE STANDARDS
AGENCY APPROVALS
These couplers perform safety functions according to the
following equipment standards: • UL1577, file no. E76222 system code H, J, and K
• DIN EN 60747-5-2 (VDE 0884) • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
Optocoupler for electrical safety requirements (pending), available with option 1
• IEC 60950/EN 60950
Office machines • VDE related features:
• VDE 0804 - rated impulse voltage (transient overvoltage),
Telecommunication apparatus and data processing VIOTM = 12 kV peak
• IEC60065 - isolation test voltage (partial discharge test voltage),
Safety for mains-operated electronic and related Vpd = 2.8 kV peak
household apparatus
• VDE 0700/IEC 60335
Household equipment
• VDE 0160
Electronic equipment for electrical power installation
• VDE 0750/IEC60601
Medical equipment

ORDERING INFORMATION
DIP, 400 mil DIP, 600 mil DIP, 700 mil

C N Y 6 # x

PART NUMBER PACKAGE CTR 10.16 mm 15.24 mm 17.8 mm

OPTION BIN
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, VDE 50 to 300 63 to 125 100 to 200
DIP-4 HV, 400 mil, high isolation distance CNY64 CNY64A CNY64B
DIP-4 HV, 600 mil, high isolation distance CNY65 CNY65A CNY65B
DIP-4 HV, 700 mil, high isolation distance CNY66 - CNY66B

Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 2.1, 24-Feb-11 1
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR 5 V
Forward current IF 75 mA
Forward surge current tp  10 μs IFSM 1.5 A
Power dissipation Pdiss 120 mW
Junction temperature Tj 100 °C
OUTPUT
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Collector peak current tp/T = 0.5, tp  10 ms ICM 100 mA
Power dissipation Pdiss 130 mW
Junction temperature Tj 100 °C
COUPLER
AC isolation test voltage CNY64 t = 1 min VISO 8200 VRMS
DC isolation test voltage CNY65 t=1s VISO 13.9 kV
DC isolation test voltage CNY66 t=1s VISO 13.9 kV
Total power dissipation Ptot 250 mW
Ambient temperature range Tamb - 55 to + 85 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature 2 mm from case,  10 s Tsld 260 °C
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF 1.25 1.6 V
Junction capacitance VR = 0, f = 1 MHz Cj 50 pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 32 V
Emitter collector voltage IE = 100 μA VECO 7 V
Collector emitter leakage current VCE = 20 V, IF = 0 A ICEO 200 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V
VCE = 5 V, IF = 10 mA,
Cut-off frequency fc 110 kHz
RL = 100 
Coupling capacitance f = 1 MHz Ck 0.3 pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83540

2 Rev. 2.1, 24-Feb-11
 CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output, Vishay Semiconductors
Very High Isolation Voltage

CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
CNY64,
CNY65, CTR 50 300 %
CNY66
CNY64A CTR 63 125 %
IC/IF VCE = 5 V, IF = 10 mA CNY65A CTR 63 125 %
CNY64B CTR 100 200 %
CNY65B CTR 100 200 %
CNY66B CTR 100 200 %

SAFETY AND INSULATION RATED PARAMETERS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
100 %, ttest = 1 s Vpd 2.8 kV
routine test
Partial discharge test voltage - tTr = 60 s, ttest = 10 s,
Vpd 2.2 kV
lot test (sample test) (see fig. 2)
VIO = 500 V, Tamb = 25 °C RIO 1012 
VIO = 500 V, Tamb = 100 °C RIO 1011 
Insulation resistance
VIO = 500 V, Tamb = 150 °C
RIO 109 
(construction test only)
Forward current ISI 120 mA
Power dissipation PSO 250 mW
Rated impulse voltage VIOTM 12 kV
Safety temperature TSI 150 °C
Note
• According to DIN EN 60747-5-2 (see fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.

VIOTM
250
t1, t2 = 1 to 10 s
225 PSO (mW) t3 , t4 =1s
200 ttest = 10 s
175 tstres = 12 s
150 VPd
125 VIOWM
100 VIORM
75 ISI(mA)
50
25
0
0 t3 ttest t4
0 25 50 75 100 125 150 175 200 t1 tTr = 60 s t2 t stres
13930
TSI - Safety Temperature(°C)
t

Fig. 1 - Safety Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5

Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 2.1, 24-Feb-11 3
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage

SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) td 2.6 μs
Rise time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) tr 2.4 μs
Fall time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) tf 2.7 μs
Storage time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) ts 0.3 μs
Turn-on time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) ton 5 μs
Turn-off time VS = 5 V, IC = 5 mA, RL = 100 , (see fig. 3) toff 3 μs
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k, (see fig. 4) ton 25 μs
Turn-off time VS = 5 V, IF = 10 mA, RL = 1 k, (see fig. 4) toff 42.5 μs

IF

0
IF IF +5V tp t
IC
0
IC = 5 mA; adjusted through 100 %
input amplitude 90 %

RG = 50
tp
= 0.01
T
10 %
tp = 50 µs 0
Channel I tr
Oscilloscope td ts tf t
Channel II RL 1 M t on t off
CL 20 pF
50 100 tp Pulse duration ts Storage time
td Delay time tf Fall time
95 10900 tr Rise time t off (= ts + tf) Turn-off time
t on (= td + tr) Turn-on time 96 11698

Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 5 - Switching Times

IF I F = 10 mA +5V
0
IC

R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Oscilloscope
R L ≥ 1 MΩ
Channel II
C L ≤ 20 pF
50 Ω 1 kΩ

95 10843

Fig. 4 - Test Circuit, Saturated Operation

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83540

4 Rev. 2.1, 24-Feb-11
 CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output, Vishay Semiconductors
Very High Isolation Voltage

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Ptot - Total Power Dissipation (mW)

280 1000
Coupled device

ICEO - Collector Dark Current,

VCE = 20 V
240
IF = 0

with open Base (nA)

200
100
160
Phototransistor
120
IR-diode 10
80

40

0 1
0 25 50 75 100 0 10 20 30 40 50 60 70 80 90 100
21995 Tamb - Ambient Temperature (°C) 96 12000 Tamb - Ambient Temperature (°C)

Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 9 - Collector Dark Current vs. Ambient Temperature

1000 100

IC - Collector Current (mA)

VCE = 5 V
IF - Forward Current (mA)

100 10

10 1

1 0.1

0.1 0.01
0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100
96 11862 VF - Forward Voltage (V) 95 11012 IF - Forward Current (mA)

Fig. 7 - Forward Current vs. Forward Voltage Fig. 10 - Collector Current vs. Forward Current
CTRrel - Relative Current Transfer Ratio

1.5 100
1.4 VCE = 5 V IF = 50 mA
IC - Collector Current (mA)

IF = 10 mA
1.3 10 mA
1.2 10 5 mA
1.1
1.0
2 mA
0.9
1
0.8 1 mA
0.7
0.6
0.5 0.1
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80 0.1 1 10 100

96 11911 Tamb - Ambient Temperature (°C) 95 11013 VCE - Collector Emitter Voltage (V)

Fig. 8 - Relative Current Transfer Ratio vs. Fig. 11 - Collector Current vs. Collector Emitter Voltage
Ambient Temperature

Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 2.1, 24-Feb-11 5
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage

1.0 20

ton/toff - Turn-on/Turn-off Time (µs)

0.9 Non-saturated
ton operation
0.8
VCEsat - Collector Emitter

VS = 5 V
Saturation Voltage (V)

15
0.7 RL = 100 Ω
CTR = 50 %
0.6
toff
0.5 10
0.4
0.3
5
0.2
20 %
0.1
10 %
0.0 0
1 10 100 0 2 4 6 8 10
96 11912 IC - Collector Current (mA) 95 11016 IC - Collector Current (mA)

Fig. 12 - Collector Emitter Saturation Voltage vs. Fig. 15 - Turn-on/Turn-off Time vs. Forward Current
Collector Current

1000
CTR - Current Transfer Ratio (%)

VCE = 5 V

100

10

1
0.1 1 10 100
95 11015 IF - Forward Current (mA)

Fig. 13 - Current Transfer Ratio vs. Forward Current

50
ton/toff - Turn-on/Turn-off Time (µs)

toff
40

30

ton
20
Saturated operation
10 VS = 5 V
RL = 1 kΩ

0
0 5 10 15 20
95 11017 IF - Forward Current (mA)

Fig. 14 - Turn-on/Turn-off Time vs. Collector Current

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83540

6 Rev. 2.1, 24-Feb-11
 CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output, Vishay Semiconductors
Very High Isolation Voltage

PACKAGE DIMENSIONS in millimeters FOR CNY64

12.8 ± 0.1 7.2 ± 0.1

6.01 ± 0.1

9.1 ± 0.3
10.16 ± 0.2
5.08 ± 0.2

4
0.
0.
5

Weight: ca. 0.73 g

Creepage distance: > 9.5 mm
A Coll
Air path: > 9.5 mm
after mounting on PC board

Cath E

technical drawings
according to DIN
specifications

Drawing-No.: 6.544-5038.01-4
Issue: 2; 10.11.98
14765

Document Number: 83540 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 2.1, 24-Feb-11 7
CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage

PACKAGE DIMENSIONS in millimeters FOR CNY65

17.8 ± 0.1 9.6 ± 0.1

6.1 ± 0.1

9.1 ± 0.3
15.24 ± 0.2
7.62 ± 0.2
technical drawings
4 according to DIN
0. specifications

0.
5
A Coll Weight: ca. 1.40 g
Creepage distance: > 14 mm
Air path: > 14 mm
after mounting on PC board

Cath E

Drawing-No.: 6.544-5036.01-1
Issue: 2; 10.11.98
14763

PACKAGE DIMENSIONS in millimeters FOR CNY66

20.4 ± 0.1 9.6 ± 0.1
6.1 ± 0.1

9.1 ± 0.3

17.8 ± 0.2 technical drawings

7.62 ± 0.2 according to DIN
specifications

4
0.
Weight: ca. 1.70 g
0.

Creepage distance: > 17 mm

5

A Air path: > 17 mm

Coll
after mounting on PC board

Cath E

Drawing-No.: 6.544-5037.01-4
Issue: x; 10.11.98
14764

PACKAGE MARKING
CNY65A
V YWW J 69

21764-73

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83540

8 Rev. 2.1, 24-Feb-11
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Revision: 13-Jun-16 1 Document Number: 91000