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Investigation of the Abstraction and Dissociation Mechanism in the Nitrogen
Trifluoride Channels: Combined Post-Hartree-Fock and TST Approaches
Daniel Claudino, Ricardo Gargano, Valter Henrique Carvalho
Silva, Geraldo Magela e Silva, and Wiliam Ferreira da Cunha
J. Phys. Chem. A, Just Accepted Manuscript • DOI: 10.1021/acs.jpca.6b04947 • Publication Date (Web): 29 Jun 2016
Downloaded from http://pubs.acs.org on July 1, 2016
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2 Investigation of the Abstraction and Dissociation Mechanism in the Nitrogen
3 Trifluoride Channels: Combined Post-Hartree-Fock and TST Approaches
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5 D. Claudino†, R. Gargano‡, Valter H. Carvalho-Silva§, Geraldo M. e Silva‡, W. F. da Cunha* †,‡
6 † Quantum Theory Project, Gainesville, FL 32611-2085, USA
7 ‡ Institute of Physics, University of Brasilia, Brasilia, 70.919-970, Brazil and
§ Grupo de Quı́mica Teórica e Estrutural de Anápolis, Ciências Exatas e Tecnológicas,
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Universidade Estadual de Goiás, CP 459, 75001-970, Anápolis, Brazil
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10 *email: wiliam@unb.br
11 phone:+55 61 3107 7718
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15 Abstract
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17 The present paper concludes our series of kinetics studies on the reactions involved in the complex
mechanism of Nitrogen Trifluoride decomposition. Two other related reactions that, along with this
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mechanism, take part on an efficient boron nitride growth process are also investigated. We report
19 results concerning two abstraction reactions, namely NF2 +N2NF and NF3 +NF2NF2 , and two
20 dissociations, N2 F4 2NF2 and N2 F3 NF2 +NF. State of art electronic structure calculations at
21 the CCSD(T)/cc-pVTZ level of theory were considered to determine geometries and frequencies
22 of reactants, products and transition states. Extrapolation of the energies to the complete basis
23 set limit was used to obtain energies of all the species. We applied the transition state theory to
24 compute thermal rate constants including Wigner, Eckart, Bell and deformed theory corrections in
25 order to take tunneling effects into account. The obtained results are in a good agreement with the
26 experimental data available in the literature and are expected to provide a better phenomenolog-
ical understanding of the NF3 decomposition role in the boron nitride growth for a wide range of
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temperature values.
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30 I. INTRODUCTION
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The great interest of the scientific community in the physical-chemistry of boron nitride (BN) is justified by the
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wide range of applications that its allotropes and derived compounds present. Gas sensors1 , semiconducting devices,
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fuel cells and sources of boron for more effective nuclear fusion reactors2 are just a few of the many possibilities of
35 use for these materials3–8 . BN films can be grown either by chemical or physical vapor decomposition. This growth
36 process takes place on reactions with several different chemical species such as BF3 , N2 , H2 and, most importantly,
37 NF3 . The use of the latter compound was observed to increase the etching rate of BN as well as to improve its
38 stabilization. In order to optimize the growth conditions of BN, an extensive kinetic mechanism was proposed9,10
39 and the fully understanding of the chemistry underlying such process requires the evaluation of the rate constant
40 for several of the elementary reactions present. Among these reactions, those involved in the breaking down of NF3
41 stands out since this process is important per se.
42 The decomposition of Nitrogen Trifluoride (NF3 ) is currently a topic of major concern for environmentalists, sci-
43 entists and members of civil society worried about climate change issues. Besides the aforementioned use on the BN
44 growth process, NF3 is regularly applied in the cleaning of Plasma-enhanced chemical vapor deposition chambers11 ,
45 which are widely used to the production of liquid-crystal displays, thin-film solar cells and several other electronic
46 devices. Although NF3 is usually said to be a less harmful substitute of sulfur hexafluoride or perfluorocarbons12
47 for these tasks, it is still a powerful greenhouse gas. Also, the higher reactivity of NF3 compared with the popular
48 alternative CF4 , for instance, is a point that ought to be carefully studied. As the use of Nitrogen Trifluoride increases
49 due to the development of the electronics industry, a special attention must be payed on how the decomposition of
50 this specie might take place.
51 Although previous studies in the literature have dealt with NF3 decomposition13–16 , a general picture of how such
52 process takes place has yet to be carried out, as these works were concerned with very particular features of the
53 decomposition mechanisms. Albeit of great importance to correctly address each particular event, the consideration
54 of such particularities prevents us from gathering a general understanding of the chemistry of process itself. In
55 this sense, the subset of reactions in the BN growth mechanism that also concerns NF3 decomposition is of major
56 importance for this issue, as it provides a generic path for the transformation of nitrogen trifluoride in other species.
57 Therefore, by studying the reactions involved in the NF3 decomposition mechanism we are simultaneously tackling a
58 problem that concerns two very important fields of study, namely the NF3 decomposition and the BN growth process.
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Paragon Plus Environme
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