1N4148WS

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Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
MARKING (example only) qualified
• Material categorization: for definitions of compliance

XY please see www.vishay.com/doc?99912

22610
MECHANICAL DATA
Bar = cathode marking Case: SOD-323
XY = type code
Weight: approx. 4.3 mg
DESIGN SUPPORT TOOLS click logo to get started Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
Models 08/3K per 7" reel (8 mm tape), 15K/box
Available

PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
1N4148WS-E3-08 or 1N4148WS-E3-18
1N4148WS Single A2 Tape and reel
1N4148WS-HE3-08 or 1N4148WS-HE3-18

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 75
V
Repetitive peak reverse voltage VRRM 100
Average rectified current half wave
f ≥ 50 Hz IF(AV) 150
rectification with resistive load (1) mA
Surge forward current t < 1 s and Tj = 25 °C IFSM 350
Power dissipation (1) Ptot 200 mW
Note
(1) Valid provided that electrodes are kept at ambient temperature.

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 650 K/W
Junction temperature Tj 150 °C
Storage temperature range Tstg -65 to +150 °C
Operating temperature range Top -55 to +150 °C
Note
(1) Valid provided that electrodes are kept at ambient temperature

Rev. 2.3, 06-Jul-17 1 Document Number: 85751

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 1N4148WS
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Vishay Semiconductors

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IF = 10 mA VF 1 V
Forward voltage
IF = 100 mA VF 1.2 V
VR = 20 V IR 25 nA
VR = 75 V IR 5
Leakage current
VR = 100 V IR 100 μA
VR = 20 V, Tj = 150 °C IR 50
Diode capacitance VF = VR = 0 V CD 4 pF
Tested with 50 mA pulses,
Voltage rise when switching ON tp = 0.1 μs, rise time < 30 ns, Vfr 2.5 V
fp = (5 to 100) kHz
IF = 10 mA, iR = 1 mA, VR = 6 V,
Reverse recovery time trr 4 ns
RL = 100 Ω

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

103 250

Ptot - Power Dissipation (mW)

102 200
Tj = 100 °C Tj = 25 °C

10 150
IF (mA)

100
1

10-1 50

10-2 0
0 1 2 0 50 100 150 200
17437 VF (V) 20324 Tamb - Ambient Temperature (°C)

Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature

104
5
Tj = 25 °C Tj = 25 °C
1.1
f = 1 kHz f = 1 MHz
2

3
10
1.0
5
CD (0 V)
CD (VR)

2
Rf (Ω)

102 0.9
5

2
0.8
10
5
0.7
2

10-2 10-1 1 10 102 0 2 4 6 8 10

17438 IF (mA) 17440 VR (V)

Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage

Rev. 2.3, 06-Jul-17 2 Document Number: 85751

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 1N4148WS
www.vishay.com
Vishay Semiconductors

104
5

103
5

2
IR (nA)

102
5

10
5
VR = 20 V
2

1
0 100 200
17441
Tj (°C)

Fig. 5 - Leakage Current vs. Junction Temperature

100
5 I
4 n = tP/T T = 1/fP
3
2 IFRM
10 tP
n=0 t
IFRM (A)

5 T
4 0.1
3
2
0.2
1
0.5
5
4
3
2

0.1
10-5 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10
17442 tP (s)

Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration

Rev. 2.3, 06-Jul-17 3 Document Number: 85751

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 1N4148WS
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOD-323

0.2 [0.008]
1.15 [0.045]
0.8 [0.031]

0.1 [0.004] max.

0.15 [0.006]
0.10 [0.004]
0.40 [0.016]

0° - 8°
0.25 [0.010]

1.95 [0.077]
1.60 [0.063]
Cathode bar
0.40 [0.016]
0.20 [0.008]

1.5 [0.059]
1.1 [0.043]

2.85 [0.112]
2.50 [0.098]

Footprint recommendation:

0.8 [0.031] 0.8 [0.031]

0.6 [0.024]

1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443

Rev. 2.3, 06-Jul-17 4 Document Number: 85751

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17 1 Document Number: 91000