TOSHIBA 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA950 ‘AUDIO POWER AMPLIFIER APPLICATIONS Unit in mm © High bpp : hpp=100~320 5 © LW Output Applications 2 © Complementary to 2802120 onc — MAXIMUM RATINGS (Ta =25°C) " CHARACTERISTIC SYMBOL eee Collector-Base Voltage VoRo -35 v “—fees) 2 Collector-Emitter Voltage Voro -30 |v Emitter-Base Voltage VEBO =5 Vv Collector Current 1c 300 | mA fare Base Current Ip =160_| mA 3. BASE Collector Power Dissipation Fo. 600 | mw |[sepEc 70-92 Tanction Temperature T 150 [°C |[eras 80-43 Btorage Temperature Range Tag | —85-160 [°C _|[rosHiBA_ 2oriB Weight : 021g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector Cut off Current | Topo. Emitter Cutoff Current | IBBO VEB = [= | -oa pa Collector-Fmitter _ _ Breakdown Voltage VR) cEo| 1o=-10m4, Ta=0 ~|- |=] I = -1V, Ig=— = be Current Gain FE (1) Note] Vog=—1V, Ig=—100mA | 100 320 IRE (2) Vcr=~1V, I¢=-700mA. 35] — | — Collector-Emitter Saturation Voltage Vowisat) | 1o=-500mA,Ip=-20mA | — | — | -0.7| v Base-Emitter Voltage VBE Von=-1V, Io=-10ma__| -0.5| — | -0.8| Vv ‘Transition Frequency fr Von=~—5V, Io=—10mA = [20 | — [ane Collector Output VoB=—10V, Ip=0, Capacitance Cob f=1MHe -| *|- |" Note : hpx (1) Classification © : 100~200, Y : 160~320 sce © Tuten Gat ary ihe aang taal Sapaty nd larly Yo sya aes Ws tae apo he oot {TOSHIBA progucs, to observe standards of safety, and to avoWd situations in which a malfunction or faure of 8 oduc could cabse lest Se nl ee Re as eck nae Pad ety tnd enc cal et a cgtSndaa Kal rns ite tte setae tO nnd cya» anf tm ple o ow pode, No cer saan by Toba Spleen att ax Sy tle’ eyo oar ha tobe Coton cede Te HON ee 9 Me tremat Stud nan aes leet 7996-09-02 1/2TOSHIBA Ie - Vor ‘COMMON EMITTER Ten26C & 8 @ CouRcTOR CURRENT te (mA? COLLECTOR-EMIFTER VOLTAGE Vor () Vor (sat) ~ Ic ‘couMON EMITTER Ieltg= 0° OUTAGE Veron 2s PoLIECTOR EMITTER SATURATION =F <1 =a =100 200 1000 COLLECTOR CURRENT Ig) mA) Po = Ta INFINITE HEAT SINK @ NO HEAT SINK g g g g § # CCOURCTOR POWER DISSIPATION Fe) i AMBIENT TEMPERATURE. Ta. 0) 2SA950 bpp = Ie ‘COMMON EMITTER Vor=—1¥ z 8 ¢ DC CURRENT OAIN bee g 8 2 Mya <1 88-100 B00 — 1000 COLLECTOR CURRENT Ie. (mA) Ic - Var ‘COMMON EMITTER Vor=-1V 10 Bg cotsctor cunaast 16 why Toa 0s 0m BASEEMITTER VOLTAGE Vag (W) 7996-09-02 2/2