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MOS Transistor Theory: - So Far, We Have Viewed A MOS Transistor As An Ideal Switch (Digital Operation)
MOS Transistor Theory: - So Far, We Have Viewed A MOS Transistor As An Ideal Switch (Digital Operation)
Depletion region
Depletion region
n+ n+
p-type body
b
– e- from s to d - -
s d
p-type body
• Similar to linear resistor b
Vgs > Vt
Vgs > Vgd > Vt
+ g +
- - Ids
s d
n+ n+
0 < Vds < Vgs-Vt
p-type body
b
n+ n+
Vds > Vgs-Vt
p-type body
b
• V=
gate
Vg
polysilicon + +
gate source Vgs Cg Vgd drain
W
Vs - - Vd
channel
tox n+ - + n+
SiO2 gate oxide
Vds
L
n+ n+ (good insulator, εox = 3.9) p-type body
p-type body
gate
Vg
polysilicon + +
gate source Vgs Cg Vgd drain
W
Vs - - Vd
channel
tox n+ - + n+
SiO2 gate oxide
Vds
L
n+ n+ (good insulator, εox = 3.9) p-type body
p-type body
Ids (mA)
• Plot Ids vs. Vds
1
– Vgs = 0, 1, 2, 3, 4, 5 Vgs = 3
0.5
– Use W/L = 4/2 λ Vgs = 2
Vgs = 1
0
0 1 2 3 4 5
W 3.9 • 8.85 ⋅ 10−14 W W Vds
β = µ Cox = ( 350 ) = 120 µ A / V 2
L 100 ⋅ 10−8 L L
polysilicon
gate
W
tox
L SiO2 gate oxide
n+ n+ (good insulator, εox = 3.9ε0)
p-type body
S D
W
RS RD
Drain
g2 d2
s2 • Net effect: slight increase
g1 d1 Vsb2 = 0
V12 in threshold voltage Vt,
s1 Vsb1 = 0 Vt2>Vt1
V11
V DD V DD V DD
V DD V DD
V DD
V DD
V DD
V SS
V DD V DD V DD
V DD V DD
V DD
V s = V DD -V tn V DD -V tn
V DD -V tn V DD -V tn
V DD
V s = |V tp | V DD -V tn
V DD V DD -2V tn
V SS
VDD
Idsp
Vin Vout
Idsn
VDD
Idsp
Vin Vout
Idsn
VDD
Vgsn = Vin Idsp
Vin Vout
Vdsn = Vout Idsn
VDD
Vgsn = Vin Idsp
Vin Vout
Vdsn = Vout Idsn
VDD
Idsp
Vin Vout
Idsn
VDD
Idsp
Vin Vout
Idsn
VDD
Vgsp = Vin - VDD Vtp < 0 Idsp
Vin Vout
Vdsp = Vout - VDD Idsn
VDD
Vgsp = Vin - VDD Vtp < 0 Idsp
Vin Vout
Vdsp = Vout - VDD Idsn
Vgsn4
Idsn
Vgsn3
-Vdsp
-VDD Vgsn2
Vgsp1 Vgsn1
Vgsp2 0 VDD
Vgsp3 Vdsn
Vgsp4 -Idsp
Vgsp5
Vout
C
D
E
0 Vtn VDD/2 VDD+Vtp
VDD
Vin
C
D D
E
0
E Vtn VDD/2 VDD+Vtp
VDD
Vin
VDD
βp
= 10
βn
Vout 2
1
0.5
βp
= 0.1
βn
0
VDD
Vin
VDD
βp/β n > 1
Vin Vout
Vin
0
VDD
βp/β n > 1
Vin Vout
VOL
Vin
0
Vtn VIL VIH VDD- VDD
|Vtp|