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NEC aalree x 6-Bit NEC Electronics Inc. Static CMOS RAM Description Pin Configurations ‘The uPD43256A is a 32,768-word by B-bit static RAM —_28.Pin Plastic DIP or Minifiat fabricated with advanced silicon-gate technology. Ite = Unique design uses CMOS peripheral circuits and N- channel memory cells with polysilicon resistors to make macle ep the wPD43256A a high-speed device that requires very de ao low power and no clock or refreshing. sed) apa Minimum standby power is drawn when GS is high, asqs Bas independent of the other Inputs levels. Data retention is ese gee guaranteed at a power supply voltage as low as 2V. The woG7 § a2boe ‘#PD43256A Is available in standard 28-pin plastic DIP, | nadee eas 26-pin plastic miniflat, or 32-pin plastic TSOP ard SB tos packaging. wy ta voy werqie iz v9 Features | W313 te B 105, © Single +5-volt power supply one Efe 10 © Fully static operation—no clock or refreshing = tt required © TTL-compatibie inputs and outputs Pin Identification 9 Gomen YO using teeta outputs Symbol Funetion © One CS pin and one OE pin for easy application : © Data retention of 2 V minimum om ne © Standard 28-pin plastic DIP and minifiat packaging ‘Yr Os Data nputs and output © Standard 32-pin plastic TSOP packaging a Chip aeect (with either normal or reverse bent leads) = ‘Output enable te Wie enable xo Ground Vee “+6ah power oupehy ic No connestion NEC uPD43256A Ordering Information Data Retention Current (max) Catalog Part Number ‘Access Time (max) (Oto 70°C(mmax) Package PORRSEAC ESL oo Sona 28:pin plastic DIP(EOO mh col, 100.95 oa 120s cm eeaan 50 ne WPOIZEEAC SLL SSC Boy 2:pin plastic DIP(OO ma) ero 100 ne = 180m - 85 ns BoA ‘8-pin plastic minifiat Guiol «00 ne GusaL 120 ns Goast 150m HPDAS2SEAGUBSLL 85 m9 2OuA ‘28-pin plastic minifiat GUAOLL 100 ns eure 120 ne ous 1508 PDASESEAGK: 700 ne SOWA ‘2:pin plastic TSOP (normal pinoute) oxi 200 ne pPORRSEAGKAOLL, 100 ne 20m ext 120 ne BPDASSGAGXM AOL 100m S0HA "32-pin plastic TSOP (reverse pinouts) oat 1200 ne pPDsS286A6 100-n8 OHA 1208 24a pPD43256A NEC Block Diagram as . Memory Cat a aay de si fows 1 ese corns al al NEC HPD43256A, Absolute Maximum Ratings Truth Tablo Supply volage. Veo (ete ~O50 4700 GS OE OWE ~—~Functlon vO tes input vette, Vi (Note 1) O5t0Vog+O5V HX x _Noteclected _fagh Standoy Output vatege, Yo Cet 7 ~OSteVoc +05V LH _H_Neteslected Haigh hate Operating temperature, Tore core Lt # Road Dour ___Aatve Storage torporatur, Tera ceerero bx 4 Wie Dy dative owe csspation, Po OW Notes: Expooure to Absolte Maximum Ratings for extended paiods may (1) X= dont care, atfectcevceretablity; exceeding the ratings could cause permanant ‘damage. The device should be operated within the mis specited Recommended Operating Conditions oe eee Parameter ‘Symbol Min Typ Max Unit Notes: Supplywotage veo ——AS~_=8O= SC () ~80V minimum (puis wieth = 60 ns) inputvoltage,ow vw ~SC OS ov Capacitance a pac! Totage, = T= +2501 = TMH Vy ard Vour = OV reeves gn _Vey_ 2 sce Oo Ey — Mama | Men temperature Ta ° Dam input eapectance a Spr Netoe: inpuvoutput capaakance Cy @ pF (1) -8.0V minimum (pulse width = 509 Notes: (1) Ths parameter is sampled and not 100% teated. DC Characteristics Wa to +700; Woe = +80V = OE Parameter Symbol Min Tye___Max___Unit Test Conditions inputioskage current lu = 1A Ww = OV 100 WO eaiege current ho = 1 ak Wigs OV @ Veg tS = Vio OE Vi OWE = Vu ‘parang supay surent cons mA OS 5 Vi frin gee yo = OV (te Tocae Ey mA 08 = Vaso = OV Toons mA CBs 02Vif= 1 Wyo = OVW 202; Vee 2 Voo=02V Standby supply carent Top om ty iee1 ate 08 ma CSS Veo -02V ato ‘Duipat woke, low Vou 04 Vt 24 mA ‘Output vege, high Vow 2a Vo = =O ma Vouz Voo-05 V___ low = -0.4mA Notes: (1) APD«S2SOATOL/TOLL/A2L/S2LL = 40 mA (max). RPDASZSBA-1BL/IBLL = 35 mA (max) (2) RPDAR2SBAGX-IOLL/-T2LL = 60 4A (max) uPD43256A NEC ‘AC Characteristics (for L and LL Versions) a Oto +70: Voc = 450V 10% PDAIOSGA-BS __APDAS2SEAIO Parameter Symbol Min Max Mina Road Operation Feed oleae tac 5, 700 fase nom 5 700 Gripadest es 8 100 PPDASRSEAAZ 2) 1 20 pPDSI2EATS Max 1, 50 ey nit Tost Conditions (ote 2 (wow) ‘Output enable toe o ~ to output valle (ote 2) ‘Outputhold ton © 0 {rom aderoan ‘change 0 Grip sewer tee 0 0 output ow 0 (vote 3) Output able tor 8 3 to output in low. (ote 3) Chip eslect to output in high £ 8 Wate 3) Output enable tonz ~ % fe output in ighZ Write Operation ‘Write ote time 12 ‘Note 3) Grip seteotto end of wite ‘asress vals to nd of wit 7” « ‘we pulse win ‘We recovery rt 8 Data vais to fond of write ‘ata hold time Wie enable to output in high-z ‘Output active ftom end of wee g| gle] ¢| e| ¢] el e| ole 0 10 (Note 8) (voto 3) Notes: (Q) Ineut pulse lovee = 0.81022 V; Input pulee rise and falltimes = ‘Sh Hing folarance levels = 1.5 V. (2) S00 igure 1 for output load. {@) See figure 2 for output lead. NEC weDssassa Low Vec Data Retention Characteristics Ta = 010706 Parameter ‘Symbol Min Typ ‘Max Unit Test Conditions Data retention supply wage Vooon 20 S53 V (OS Voc -08V ‘Data retention supply current ‘coon To wA___ Yop = 80Vi 08 = Vag-0aV Naim ‘Chip deselection to data rewention toon ° ne ‘Operation recovery time ® We ne Notes: (1) For xPDAS2S6ALL, loco = 20A (max) atT, = 00 700 and 3A (max) at Ty = O10 400, (2) FerpPDAS2S6K, Iocan = 154A (rte) #74 = 00 40. Data Retention Timing [1] The eter ins (Adana, OE, WE, VOs) can be in asta of tigh impedance, vor) BPD43256A NEC Figure 1. Output Load Figure 2. Output Load for te.z, tor, tcuz: tonz, twnz, and tow sv 200.0 ry won i ear ope son] NEC HPD43256A ‘Timing Waveforms Address Access Cyclo our Prvius Data Vaid tg adress ‘Aiea Va ished Ng tors reas cyt [2\ The deveeiscontnualy elec, wnere 7 Hon tmoedance — 11 WE ar areas oe 7 [Aras aid rw o contr on easton oS. Chip Select Access Cycle sate cma ” ‘a NX Hi teuz- be—teonz rer) - ppoeseeen_ NEC pPD43256A ‘Timing Waveforms (cont) WE-Controlied Write Cycle SS eo ear, [how 4) Dour ‘esa Undated Ne In Awa jee oxi dng te resp ot ow GS and stow WE (2) CS.or WE muntbe High csng aeons rantion. {9} INGE Wg me 10 poate na stato gh impedance, 1H} Dug Bs erg th UO pra may ve ne out tae “Fhe, bpur egal ot posts prase mst Po! b apple.

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