DATA SHEET

COMPOUND TRANSISTOR

BB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching

The BB1 Series is an N type small signal transistor and enables the reduction of component counts and
downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic
appliances and OA equipments such as VCRs and TVs.

FEATURES PACKAGE DRAWING (UNIT: mm)

• Up to 0.7 A current drive available
• On-chip bias resistor
• Low power consumption during drive

QUALITY GRADES
• Standard

Please refer to “Quality Grades on NEC Semiconductor

Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
Electrode Connection
recommended applications. 1. Emitte (E)
2. Collector (C)
3. Base (B)
BB1 SERIES LISTS

Products R1 (KΩ) R2 (KΩ)

BB1A4A − 10
BB1L2Q 0.47 4.7
BB1A3M 1.0 1.0
BB1F3P 2.2 10
BB1J3P 3.3 10
BB1L3N 4.7 10
BB1A4M 10 10

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D11739EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K) © 2002
1998
Printed in Japan
 BB1 SERIES

ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Parameter Symbol Ratings Unit

Collector to base volgate VCBO 30 V
Colletor to emitter voltage VCEO 25 V
Emitter to base voltage VEBO 10 V
Collector current (DC) IC(DC) 0.7 A
Collector current (Pulse) IC(pulse)Note 1 1.0 A
Base current (DC) IB(DC) 0.02 A
Total power dissipation PT 250 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

Note 1 PW ≤ 10 ms, duty cycle ≤ 50 %

BB1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector cutoff current ICBO VCB = 30 V, IE = 0 100 nA
DC current gain hFE1Note 2 VCE = 2.0 V, IC = 0.1 A 300 −
DC current gain hFE2 Note 2
VCE = 2.0 V, IC = 0.5 A 300 −
DC current gain hFE3Note 2 VCE = 2.0 V, IC = 0.7 A 135 −
Collector saturation voltage V CE(sat) Note 2
IC = 0.5 A, IB = 5 mA 0.27 0.4 V
Low level input voltage VIL Note 2
VCE = 5.0 V, IC = 100 µA 0.3 V
Input resistance R1 − − − Ω
E-to-B resistance R2 7 10 13 kΩ

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

BB1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector cutoff current ICBO VCB = 30 V, IE = 0 100 nA
DC current gain hFE1 Note 2
VCE = 2.0 V, IC = 0.1 A 150 400 −
DC current gain hFE2Note 2 VCE = 2.0 V, IC = 0.5 A 300 700 −
DC current gain hFE3 Note 2
VCE = 2.0 V, IC = 0.7 A 135 600 −
Note 2
Low level output voltage VOL VIN = 5.0 V, IC = 0.5 A 0.2 0.3 V
Low level input voltage VILNote 2 VCE = 5.0 V, IC = 100 µA 0.3 V
Input resistance R1 329 470 611 Ω
E-to-B resistance R2 3.29 4.7 6.11 kΩ

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

2 Data Sheet D11739EJ2V0DS

 BB1 SERIES

BB1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector cutoff current ICBO VCB = 30 V, IE = 0 100 nA
DC current gain hFE1Note 2 VCE = 2.0 V, IC = 0.1 A 80 −
DC current gain hFE2 Note 2
VCE = 2.0 V, IC = 0.5 A 100 −
DC current gain hFE3 Note 2
VCE = 2.0 V, IC = 0.7 A 135 −
Low level output voltage VOLNote 2 VIN = 5.0 V, IC = 0.5 A 0.3 0.4 V
Low level input voltage VILNote 2 VCE = 5.0 V, IC = 100 µA 0.3 V
Input resistance R1 0.7 1.0 1.3 kΩ
E-to-B resistance R2 0.7 1.0 1.3 kΩ

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

BB1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector cutoff current ICBO VCB = 30 V, IE = 0 100 nA
DC current gain hFE1 Note 2
VCE = 2.0 V, IC = 0.1 A 300 −
DC current gain hFE2 Note 2
VCE = 2.0 V, IC = 0.5 A 300 −
DC current gain hFE3Note 2 VCE = 2.0 V, IC = 0.7 A 135 −
Note 2
Low level output voltage VOL VIN = 5.0 V, IC = 0.3 A 0.3 V
Low level input voltage VIL Note 2
VCE = 5.0 V, IC = 100 µA 0.3 V
Input resistance R1 1.54 2.2 2.86 kΩ
E-to-B resistance R2 7 10 13 kΩ

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

BP1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector cutoff current ICBO VCB = 30 V, IE = 0 100 nA
DC current gain hFE1 Note 2
VCE = 2.0 V, IC = 0.1 A 300 600 −
DC current gain hFE2Note 2 VCE = 2.0 V, IC = 0.5 A 300 700 −
DC current gain hFE3 Note 2
VCE = 2.0 V, IC = 0.7 A 135 600 −
Note 2
Low level output voltage VOL VIN = 5.0 V, IC = 0.2 A 0.14 0.3 V
Low level input voltage VILNote 2 VCE = 5.0 V, IC = 100 µA 0.3 V
Input resistance R1 2.31 3.3 4.29 kΩ
E-to-B resistance R2 7 10 13 kΩ

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

Data Sheet D11739EJ2V0DS 3

 BB1 SERIES

BB1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector cutoff current ICBO VCB = 30 V, IE = 0 100 nA
DC current gain hFE1Note 2 VCE = 2.0 V, IC = 0.1 A 300 −
DC current gain hFE2 Note 2
VCE = 2.0 V, IC = 0.5 A 300 −
DC current gain hFE3 Note 2
VCE = 2.0 V, IC = 0.7 A 135 −
Low level output voltage VOLNote 2 VIN = 5.0 V, IC = 0.2 A 0.3 V
Low level input voltage VILNote 2 VCE = 5.0 V, IC = 100 µA 0.3 V
Input resistance R1 3.29 4.7 6.11 kΩ
E-to-B resistance R2 7 10 13 kΩ

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

BB1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector cutoff current ICBO VCB = 30 V, IE = 0 100 nA
DC current gain hFE1 Note 2
VCE = 2.0 V, IC = 0.1 A 300 −
DC current gain hFE2 Note 2
VCE = 2.0 V, IC = 0.5 A 300 −
DC current gain hFE3Note 2 VCE = 2.0 V, IC = 0.7 A 135 −
Note 2
Collector saturation voltage VOL VIN = 5.0 V, IC = 0.2 A 0.3 V
Low level input voltage VIL Note 2
VCE = 5.0 V, IC = 100 µA 0.3 V
Input resistance R1 7 10 13 kΩ
E-to-B resistance R2 7 10 13 kΩ

Note 2 PW ≤ 350 µs, duty cycle ≤ 2 %

4 Data Sheet D11739EJ2V0DS

 BB1 SERIES

TYPICAL CHARACTERISTICS (Ta = 25°°C)

Data Sheet D11739EJ2V0DS 5

 BB1 SERIES

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M8E 00. 4