a aS sre Recruitment Entrance Test for Scientist/Engineer ‘SC’ 2015 A Electron mobility of the following intrinsic elements in descending order is: (a) GaAs, Ge, Si (b) GaAs, Si, Ge © Si, Ge, GaAs (@) Ge, Si, GaAs A sample of Si is doped with 10" donor atoms/em*. Considering electron mobility in the doped Si 700 em*/V-see, the approximate resistivity of the doped Si is: (@) 12cm >) 10Q-cm © 0.1Q-em @ 100m Common-base current gain of a p-n-p bipolar transistor is 0.99, The common emitter current gain of the transistor is: (a) 101 @) 0.01 @ 99 @ 10 f The electrical conductivity of a semiconductor increases when a radiation of wavelength shorter than 1000 nm is incident on it. The band gap of the semiconductor is: (a) 24eV (b) 12eV @ 34eV @ 40ev ‘The voltage across the resistor R is: rin 19 val) j19 R=19 @ v8 ev ) 142 Zorv (@) 1/2 245eV @ wv? z45°V 3 ICRB-ELECTRONICS ENGINEERING| beds) | Recruitment Entrance Test for ScientistEngineer‘SC'2015, | AL | 6. The effective resistance faced by the voltege source A Ke ff tLw 4a # (i) ae @ 49 @) 120 @ 3a @ 16a 7. Common emitter DC current gain of the transistor is 100. The current through the 10 V Zener diode (assuming Vue of the transistor is 0.7 V) is: 20V 0.5kQ i 10 Vv 102 (a) 10.3mA (b) 19.3 mA ST © 20 mA (d) 40 mA 8. The circuit is with an ideal operational amplifier with +10 V. supply. The output voltage is: 1kQ 10kQ J 20 mV “AA\— ‘ 40 mV OAM = 2ko Vow + (a) -200mV (b) -400 mV (©) -600mV (@) -300 mV ICRB - ELECTRONICS ENGINEERINGRecruitment Entrance Test for Scientist/Engineer ‘SC’ 2015 | A | 9. 10. 1. 12, 13. A step voltage of 10 V applied to the circuit at ¢= 0. The current through the resistor R just after ¢ = 0 and at steady state are: R=109 5 52 Tak (@) 100A, 50. mA (}) 50 mA, 50 mA a (©) 100 mA, 100 mA (@) 75 mA, 75 mA Which of the following addressing mode is not usable in XCH instruction .of 8051 microcontroller? (a) Direct Addressing (0) Indirect Addressing (©) Register Addressing (@) Immediate Addressing In a binary source, 0s occur three times’as often as 1s. What is the information contained in = the 1s? (a) 0.416 bit (b) 0.333 bit (© — Bbit @) 2bit Spectrum of a signal x(t), sampled at period 7, is given by: = iz a @ X,N= Zz x¢-p O X= Dror =H : © XM=x¢-p @ x)= ExG-n7) A bandpass signal occupies the bandwidth 390 KHz to 410 KHz. What minimum sampling frequency would you use from the options giveri below, so as to avoid aliasing? (@ 40KHz (b) 820 KHz @ 41 KH @ 800 KHz 5 ICRB - ELECTRONICS ENGINEERING| aie _ | cenit ange eg ee clans ioginaen tS 215) | TN | 14. A 12-bit ADC has input signal range of + 1 V. The signal to quantization noise ratio if a sine wave signal with 0.25 V peak voltage is given as input is: @ 624B (&) 724B @ 744B @ 484B 15. Identify the modulation schemes for the chown signal constellation diagram Q (@ ASK () MSK = © FSK @ QAM 16. Which of the following modulation scheme requires minimum power for transmission? (@ QPSK (b) 8-PSK } © 16-QAM @ 64QAM 17. Which of the following channel coding scheme helps in correcting burst errors? (@ cRe (i (b) Convolution coding a © Viterbi (@) Reed-Solomon 18. A 70 MHz carrier is QPSK modulated by a 1.544 Mbps T data stream. The transmitter employs a raised-cosine filter with @=0.2. What is the transmitted bandwidth of the signal? (@) 3705.6 KHz (b) 1862.8 KHz (© 308.8 KHz @ 926.4 KHz \ 19. Iftwo tones f and /, are amplified by a non-linear amplifier, which frequency components would be present in output? @ fh O filrhthh-h © hth h-h (@) nf, £mf,, where n and m are integers ICRB-ELECTRONICS ENGINEERING 6belt) al | Recruitment Entrance Test for Scientist/Engineer ‘SC’ 2015 | A 20. 21. 22, 24. 25. 26. ‘A phase lock loop with a first order loop filter can track: (@) phase offset (b) frequency offset (©) frequency offset rate (@) amplitude variation ‘The noise figure of a device is 2. If input SNR is 37 dB, what would be output SNR? (a) 18.54B @) 344B © 40dB @ 744B What is the limit of Eb/No, below which reliable communication is not possible? @) 1048 (b) -1.64B © ode @ = 164B og A satellite communication link has uplink C/No of 50 dB-Hz and downlink C/No of 47 dB-Hz. What would be overall link C/No? (@) 44dB-Hz () 45 aB-He @ 48.5 4B-Hz @) 53 dB-Hz ~ A signal transmitted from an Earth station bounces back from a geostationary satellite, with an altitude of 85864 km from the Earth surface. The range from the Earth station is a4 36200 km. The round trip time is about: (excluding processing delays and assuming = 8x10 m/s) = @ 255ms (b) 127 ms © 239ms @ = 120ms 1 mW in dBm is: @ 04dBm (&) 30 dBm . © 304Bm @ 14Bm Which of the following is not true? (a) MPEG-4 is a source coding technique (b) Channel coding gives coding gain at the expense of bandwidth (©) Source coding/decoding is done to remove errors (@)_— Concatenated coding gives usually good performance 7 ICRB-ELECTRONICS ENGINEERING27. The following Finite State Machine (FSM) is used to detect a particular pattern in input data stream. Whenever the pattern is matched at input, output is set to ‘I’ or else output is cleared to ‘0’. For which of the following data stream, output goes to ‘I’ twice? ») (a) 0010011010010101 (&) 0101011000010101 © 0011011010010101 5 @ —1100100101001010 28. A digital signal processing system is described by the expression: y(n) = 2aln) +241) + 2y(n -1) ‘The system is: t (a) A stable FIR filter (b) A stable IIR filter (©) An unstable FIR filter (d) An unstable IIR filter es 4 29. The rectangular window has relative side-lobe level: @ -134B &) 2748 y @ -32dB (@) -43dB 30. Consider the discrete time signal x(n)= {1, 1, 1, 1, 0.5, 0.5}. y(n)=conv(5(n=1), x(n)) is: f@) 1 &) 5(n-1) © — x(n-1) @ 5 31. Consider a sequence x(n)=[2, 4, 6, 8, 0,1, 3,5, 7,9]. Down-sample the sequence by 3 and then up-sample by 2. The resulting sequence is: (a) [2,0,0,0, 7, 0] () [2, 0, 0,0, 0, 0, 7, 0, 0] © [2,0,8,0,3,0,9, 0] @ [2,2,8,8,3,3,9, 9] ICRB-ELECTRONICS ENGINEERING — 8| Sel sro | Recruitment Entrance Test for Scientist/Engineer ‘SC’ 2015 | A | 32, 33, 34. 36. 37. Power consumed in a CMOS cireuit operating at frequency fis proportional to: @ Ve ) Vf © Vat @ ver ‘The phase velocity of a plane wave given by E, = E,cos(wt ~f2) with a frequency of 5.0 GHz and a wavelength in the material medium of 3.0 emis: (a) 3.0x10* m/sec ©) 15x10" m/sec © 5x10" msec @ None If the reflected wave at the load of a transmissioi line is 20dB below the incident wave, the SWR at the load is: (a) 15 (b) 1.22 © 3.0 @ 40 The highest frequency for which a circular coaxial transmission line having outer diameter = 3.1 mm and inner diameter = 1.3 mm can be operated in pure TEM mode (assuming free space medium between the two conductors) should be less than: (@) 122GHz (b) 18.6 GHz © 26.5 GHz (@) 43.4GHz \ In a communication system at 300 MHz, the receiving antenna gain is 8 Bi, the transmitting antenna gain is 10 dBi and the transmitting power level is 25 watts, the distance between the transmitter and the receiver is 1 km, the power received at the receiving antenna port (assuming the propagation medium is loss-less); @ 1mW (>) “9.97 hw © 99.7nW @ 0.9997 nw A rectangular waveguide with air medium has dimensions a= 22.86 mm and 6=10.6 mm is fed by 3 GHz carrier from a coaxial cable, which of the following is false statement for ‘TEo. mode? (@) Propagating mode (b) — Non-propagating mode © Propagating mode in case filled fully with dielectric material of proper dielectric constant @ None of the above 9 ICRB- ELECTRONICS ENGINEERINGars | Recruitment Entrance Test for Scientist/Engineer ‘SC’ 2015 | A | 38. 39. 40. 41. 42, 43, 1) ‘TM: mode in rectangular perfect metallic waveguide is: (a) Propagating mode (>) Evanescent mode (© Non-existent mode (@ None of the above ‘The directivity of a prime-focal parabolic reflector antenna is 30 dBi. If the efficiency of the antenna is 50%, the gain of the antenna is: (@) 27 dBi (b) 334Bi © 25 dBi @ 80aBi Ratio of skin depths of an Electromagnetic wave inside the conductor for tlie corresponding frequencies at 4 GHz and 9 GHz, considering the same material properties for both the — frequencies is: (a) 94 (b) 4:9 @ 32 @ 23 ! A Cassegrain reflector antenna has a sub-reflector whose geometrical shape is: (a) Paraboloid (vb) Hyperboloid (c) — Ellipsoid (@) Spherical ‘The beam-width and the directivity of an antenna are: . (a) Directly proportional (>) Inversely proportional (© Independent of each other t @ =~ Equal A lossless transmission line with characteristic impedance Z,=50 ohmis 30 m long and operates at 2 MHz. The line is shorted at the load, if the phase velocity = 0.6 times the velocity of light, the input impedance of the line is: 50 (@) — 75290° ohm Oy ger oh 100 1 @ GF 4180" ohm @ Ft ohm (RB - ELECTRONICS ENGINEERING 10| “ee | Recruitment Entrance Test for Scientist/Engineer ‘SC’ 2015 | A | 44. Two microwave sub-systems having respective return loss of 10 dB and 20 dB are cascaded together, the return loss at the input of the integrated system is: (@) 9.63 4B b) 16.36 dB @ 211248 @ 25.23 4B 45. A parabolic reflector antenna used for reception of data is 1 meter in diameter and operates at 30 GHz. The far field distance of this antenna for a quadratic phase error of 22.5 degree is: (a) 200 meter (b) 50 meter (© 100 meter @ 150 meter 46. A potential field is given by @ = 2xy* ~3y"z. If &, 9, 2 are the unit vectors along x y and z directions respectively, the field intensity at (0, 1, 0) (@) 0Vim (b) 28-33 © ~28+32 @) 2432 47. ‘The VSWR of a microwave unit is 1.5, the return loss is: (@) 144B () 164B @ 18dB @ 1dB 48. In two wire transmission line, two consecutive voltage minima are found at 20.6 em and 25.6 em, The operating frequency is: (@) 3.5GHz () 3GHz © 1GHz @ 25GHz 49. A TEM mode transmission line is having distributed circuit parameters as R= 1 ohm/m, L= 200 nH/m, G = 300 yiS/m, C = 60 pF, the line is: (@) — Loss-less (b) Losey (©) Distortion-less @ None of the above 50. A plane wave E=100sin(o~10x) Vim ina loss less medium with =4., =<, strikes another medium with 90 degree angle of incidence having 4914), #=é, the reflection co-efficient is: @) 05 (b) 0.25 © o1 @ o2 11 ICRB~ELECTRONICS ENGINEERING52, 53. 25 een What is the functionality of following digital circuit? A is input data, CLK is system clock and Y is output. ap *Q para % > or Q an Q CLK (@) Falling edge detection of input A (b) Clock division by 2 © Rising edge detection of input A (@) Clock division by 4 / A lossless transmission line has the distributed circuit Parameters of inductance and capacitance per meter as 625 nH/m and 64 pF/m respectively, the phase constant of the line at 100 MHz is: (a) 3.97 rad/m (b) 18.42 rad/m © 1.56 radim @) 9.21 rad/m \ 1 In the circuit if C1=2yF and C2=3,F, the equivalent capacitance between points A and B is: ca ° co A rd 1 1 1 2 | ce ce a @ 4yr ©) aur © iF @ our ICRB-ELECTRONICS ENGINEERING 12,54. 35. 56. 97. a Ifn number of MOSFETs with identical given by: (a) © (wALy'n (WAL)'n? Recruitment Entrance Test for Scientist/Engineer ‘SC’ 2015 A | ical W/L are connected in series, then equivalent W/L is ) WA)/n @) — (WiL)iin*) Which resource of FPGA implements combinational logic functionality? (a) (b) © (a) What will be the content of Accumulator, of following 8051 micro-controller assembl (a) ©) Block RAM Configurable Logic Block (CLB) Routing Switch Matrix All of above MOV A, #65h MOV OF Oh, #14h DIV AB DIV AB A=00h, B=00h, OV=1 A=00h, B=05h, OV=0 Average value of the waveform is: (a) © 8v 10V 13 ) @ b) (d) Register-B and Overflow Flag (OV) after execution ly code? / 20V av ICRB ~ ELECTRONICS ENGINEERING63. 64, 65. 67. Recruitment Entrance Test for Scientist/Engineer ‘SC’ 2015 A Magnitude of input impedance of a 2/8 lossless 50 2 transmission line terminated with 25 @ is: 1 NS ° : 259 1241 *" (a) 1009 &) 29 @ 502 (d) None of the above Pipelining technique is used in ‘microprocessor to improve which of the following parameter? (a) Power dissipation (>) Interrupt latency © Die size aa (a) Maximum clock frequency In ease of an ideal Class-F microwave power amplifier, time domain voltage and current waveform of the device have: (@) 50% overlap (>) Maximum overlap (© — Nooverlap (@ Less than 80% overlap Reason for superior high frequency performance of metal-semiconduetor diode cSmpared to p-n junction diode is: (@) Higher conductivity of metal compared to semiconductor (>) No minority carrier storage effect in metal-semiconductor diode (©) Metal semiconductor junction does not rectify RF signal (@ Hole is the majority carrier in Schottky barrier diode operation Which of the following diodes is most suitable for detection of microwave signal? @ P-LNdiode (b) Schottky barrier diode (©) Varactor diode (@_ P-N junction diode 15 ICRB~ELECTRONICS ENGINEERING| wanes | Recruitment Entrance Test for Scientist/Engineer ‘SC’2015 | = A | 68. Which device is suitable for higher order RF frequency multiplier? (a) P--N diode (b) _P-N junction diode © BIT (@) Step recovery diode 69. » Input reflection coefficient ‘S11’ of the 2-port network for 50 system is: 1 2 7 9 500 . ” 2 @ V3 20° () v2. 2180° =a © V3 2180" @® w20 70. ‘The graph below shows operating load liae and I-V characteristic of a Schottky diode at two different RF power levels. Under this bias condition RF resistance of the diode: : o 1 H0gBm —_-10dBm ‘Load line v (@) Remains constant with the RF power level (b) Decreases with the increase of RF power level © Increases with the increase of RF power level (@) None of the above ICRB-ELECTRONICS ENGINEERING 16oy" | Recruitment Entrance Test for Scientist/Engineer ‘SC’ 2015 | A | 71. A BJT is having common emitter current gain 100. Considering 10V supply and Von =0.7 V what will be the value of R; and Ry to set the quiescent point at J, =10 mA and Vo, =8 V? 10V Re 7k c (@) Re = 2002, Ry =93 ka )) Re =2kA, Ry =100kQ “a (© Ry=83kQ, Re=1000 @) Rp =200, Ry=93kQ = 1 | 72. Which stateinent is false about microstrip line over stripline? (a) Less radiative (b) _Easierfor component integration : (©) One sided ground plane (@) More interaction with neighboring circuit element 73. A high gain MESFET packaged device of case-to-channel thermal resistance of the device is 4.5°C/Watt provides 8 W RF output power taking 20 W DC power. What will be the channel temperature of the device if the case temperature of the device maintained at 55°C? (a) 109°C ) 145°C © 595°C @ 91°C 17 ICRB- ELECTRONICS ENGINEERINGaes | Recruitment Entrance Test for Scientist/Engineer ‘SC’ 2015 | A 74. For a class-A FET power amplifier with 10 V drain supply and 2 A drain current bias providing RF load current of 1 A amplitude. What is the DC to RF efficiency for load resistance of 5 Q? (@)_ 50% () 25% © 35% @ 12.5% 78, DC to RF efficiency of an ideal class-F amplifier is: (a) 100% () 78.4% © 50% @ <80% 76. A unilateral transistor has an output impedance Z,., =(10~ j10) @. Value of the series and shunt components of the matching network for complex conjugate match abthe output of the device to 50 © load are: (a) -X,=-j25, X,=+i30 (&) -X,=4)25, X,=+j30 © X,=-325, X,=-j3 @ X,=+j2, X,=-j30 77. Acommunication channel is having a bandwidth of 3000 Hz. The transmitted power is such that the received Signal-to-Noise ratio is 1023. The maximum data rate that can be transmitted ¢ error-free through the channel is: @ 3 Kbps (b) 30 Kbps (© — 3Mbps @ 300 Kbps ICRB- ELECTRONICS ENGINEERING 18Sues | Recruitment Entrance Test for Scientist/Engineer ‘SC’ 2015 | A | 78. A CDMA system requires E,/I, of 10 dB. Hach of the transmitters in the network transmits data at the rate of 1 Kbps with a PN chip rate of 1 Mbps. The maximum number of such users that the network can support is: (a) 20 b) 30 © 1000 @ 100 79. Laplace transform of e% sin(ex) is: 6 — ' Ay © Sone “ e © Bowe ~~ 80. 16V (a) 8.22x10° J (b) 1.48x10%I © 288x107 @ 481x107 19 ICRB~ ELECTRONICS ENGINEERING