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Solid State Electronic Devices Chapter 5 solution

반도체소자 (한양대학교)

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Chapter 5 Solutions (Global Edition)

Prob. 5.1
Find the time that it takes to grow the first 200nm, the next 300nm, and the final 400nm.
Draw and calculate step heights after reoxidation.
Time for first 200nm = 0.13 hours from Appendix VI at 1000°C

Time for next 300nm = 0.6 hours for 500nm – 0.13 hours for 200nm = 0.47 hours

Time for final 400nm = 1.8 hours for 900nm – 0.6 hours for 500 nm = 1.2 hours

Oxidation Time After Etch = 6.0 hours for 2000nm – 1.4 hours for 900nm at 1100°C
= 4.6 hours

Oxide Growth Inside Window = 1700nm

Step in oxide = 564 nm
Step in Si = 264 nm

564nm
1120nm

556nm 952nm
504nm
Original
0.44 · 900=396nm Si surface
880nm

1144nm 748nm
264nm Si

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Prob. 5.2
Plot the distributions for B diffused into Si (N d = 5 ⋅1016 1
cm3
) at 1000°C for 30min (D=
3 ⋅10-14 cm 2
s
) with (a) constant source N o = 5 ⋅1020 1
cm3
and (b) limited source
N o = 5 ⋅1013 1
cm3
on the surface prior to diffusion.

The Gaussian distribution differs from Equation 4-44 because all atoms are assumed to
diffuse into the sample (i.e. there is no diffusion in the –x direction).

D ⋅ t = 3 ⋅10-14 cm 2
s ⋅ 30min ⋅ 60 min
s
= 5.4 ⋅10-10 cm 2 = 0.0735μm

 x   x 
(a) N = N o ⋅ erfc   = N o ⋅ erfc  0.147μm 
 2 D⋅t   

x j =0.4μm

2 2
 
-  x  x
Ns  Ns - 
(b) N = ⋅e  2 D⋅ t 
= ⋅ e  0.147μm 
π ⋅ D⋅t 0.1302μm

x j =0.3μm

Prob. 5.3
For the unlimited source in Problem 5.2, calculate the time to achieve a junction depth
of 1 micron.
Use N o from Appendix VII and D from Appendix VIII.

 x   1μm 
N = N o ⋅ erfc   = 10 21 1
⋅ erfc   = 2 ⋅1016 1

 2 D⋅t   
3
cm3
 2 3 ⋅10 s ⋅t
cm -14 cm2

 1μm  2 ⋅1016 1 3
erfc  = cm
= 2 ⋅10-5
 2 3 ⋅10 cm ⋅ t 
-14 2 21 1
10 cm3
 s 
1μm 10-4 cm
= = 3.0
2 3 ⋅10-14 cms ⋅ t 2 3 ⋅10-14 cms ⋅ t
2 2

t = 9260s = 2 hrs 34 minutes 20 seconds

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Prob. 5.4
Find the energy and corresponding straggle. Find the value of implant dose and beam
current, if the scanning is done for 100 cm2 area with 30 sec implant time.

For B implant,

Projected Range, R p = 2µm

From appendix IX, Energy = 60KeV and Straggle, Δ R p = 0.07 µm

φ
Now, for peak ion concentration, Npeak=5x1018/cm3 =
2π × 0.07 × 10 − 6

Or 5x1018 x 0.07x 10-6 x 2.5066 = φ = .87731 x 1012/cm2

I⋅t
Again φ =
q⋅A

0.877 × 1012 × 1.6 × 10 −19 × 100

I= = 0.04677 x10 − 5 Amp.
30

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Prob. 5.5
Calculate and plot the P distribution.
Energy = 200keV → R p = 0.255µm, DR p = 0.0837µm from Appendix IX
Dose = φ = 2.1 ⋅1014 1
cm 2
2
1  x - Rp  1  x - 0.255µm 
2

φ - ⋅
2  DR p

 2.1 ⋅1014 1 - ⋅ 
From Equation 5-1a, N(x) = ⋅e 
= cm 2
⋅e 2  0.1µm 

2π ⋅ DR p 2π ⋅ 8.37 ⋅10 cm
-6

2.1 ⋅1014 1
cm 2
Peak N = = 1019 1

2π ⋅ 8.37 ⋅10 cm -6 cm3

Let y be the distance (μm) on either side of R p .

N(R p ± y) = 1019 ⋅ e-71.37⋅y
2
1
cm3

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Prob. 5.6
In patterning the structure shown in the question, design the mask aligner optics in terms
of numerical aperture of the lens and the wavelength of the source.
0.8 ⋅ λ λ
lmin = = 1μm DOF = = 2μm
2 ⋅ ( NA )
2
NA

 1μm ⋅ NA   1 
  ⋅   = 2μm → NA = 0.3125 λ = 0.39μm
 0.8   2 ⋅ ( NA ) 
2

Prob. 5.7
In a p+-n Si junction, the n-side has a donor concentration of 1016 cm-3. If n i =1010 cm-3,
relative dielectric constant ε r = 12, calculate the depletion width at a reverse bias of
100V? What is the electric field at the mid-point of the depletion region on the n side?
(Hint: Remember that P+ means very heavily doped!)

W : xn
1
 2ε ( V0 -V )  N a +N d   2
W=   
 q  N a N d  
V = -VR VR = 100 V; V0 = VR ⇒ VR + V0 : VR
ε = εr ε0 ; ε r = 12 ε 0 = 8.85 × 10−14 F/cm
1
 2 × 12 × 8.85 × 10−14 F/cm × (100 V )  1 
2
∴ xn =  −19  16 -3  
 1.6 × 10 C  10 cm  

( )
1
= 1.33 ×10−7 2
cm = 3.64 ×10−4 cm = 3.64 μm

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ε= q
N a ( x-x n )
ε
ε0 = - q Nd x n
ε
∴ Electric field at the middle of depletion region on n-side is
q x 1.6 ×10−19 C 3.64 ×10−4 cm
= - Nd n = - × 1016
cm -3
×
ε 2 12 × 8.85 ×10−14 F/cm 2
= -2.74 ×10 V/cm
5

Prob. 5.8
A semiconductor with a bandgap of 0.8 eV and an intrinsic carrier concentration of 1012
cm-3, is doped with 1018 cm-3 donors on the left half, and 1017 cm-3 acceptors on the right
half. Draw the equilibrium band diagram, Calculate the junction potential and the
position of the Fermi level, and indicate them on the band diagram. Suppose an electron
at the conduction band edge on the p-side goes over the n-side without scattering.
Assuming parabolic bandstructure, calculate its wavevector there. The effective mass of
the carriers is 0.2m o .

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E F -Ein Eip -E F
kT kT
n = nie p = nie
E F -Ein Eip -E F

(
1018cm -3 = 1012 cm -3 e ) kT
1017 cm -3 = 1012 cm -3 e ( ) kT

( )
E F -E in = ( 0.026 eV ) ln 106 E ip -E F = ( 0.026 eV ) ln 105 ( )
E F -E in = 0.36 eV E ip -E F = 0.3 eV
⇒ V0 = 0.36 eV + 0.3 eV = 0.66 eV
An electron going over to the n-side from the p-side without scattering has
ћ 2k 2
K.E. = 0.66 eV =
2m*

⇒ k=
( 0.66 ×1.6 ×10 J ) × 2 × ( 0.2 × 9.11×10
−19 −31
kg )
(1.054 ×10 J ⋅ s )
2
−34

⇒ k = 1.86 ×109 m -1

Prob. 5.9

An abrupt Si junction (area=0.0001 cm2) has the following parameters.

n-side p-side
N d = 5X 1017cm-3 N a = 1017cm-3

Draw and label the band diagram, and calculate the difference between the Fermi level
and the intrinsic Fermi level on both sides. Calculate the built-in potential at the junction
in equilibrium and the depletion width. What is the total number of exposed acceptors in
the depletion region?

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For n-Si: N d = 5 ×1017 cm -3

E F -E i N   5 ×1017 cm -3 
∴ = ln  d  ⇒ E F -E i = ( 0.026 eV ) × ln  -3 
= 0.45 eV
 1.5 ×10 cm 
10
kT  ni 
For p-Si: N a = 1×1017 cm -3
E F -E i  Na   1×1017 cm -3 
∴ = ln   ⇒ E F -E i = ( 0.026 eV ) × ln  -3 
= 0.41 eV
 1.5 ×10 cm 
10
kT  ni 
⇒ Vbi = 0.45 eV + 0.41 eV = 0.86 eV
2εSi Vbi  1 1 
The depletion width, W =  + 
e  Na Nd 

⇒W=
( )
2 × 13 × 8.86 ×10−14 F/cm × ( 0.86 V )  1
+
1 
−19  -3 
1.6 ×10 C  1×10 cm
17 -3
5 ×10 cm 
17

= 1.16 ×10−5 cm
N a x p = N d x n ,where x p and x n are the depletion layer widths in the p, and n regions
⇒ 1× 1017 cm -3 × x p = 5 ×1017 cm -3 × x n ⇒ x p = 5x n
x p + x n = W ⇒ 6x n = W
⇒ x n = 1.93 × 10-6 cm ; x p = 9.67 × 10-6 cm

( ) ( ) (
No. of exposed acceptors = N a x p A = 1×1017 cm -3 × 9.67 ×10-6 cm × 10−4 cm 2 )
= 9.67 ×107

Prob. 5.10
A p-n junction diode has a doping concentration of 1016 cm-3 on the p- side, and is very
highly doped on the n-side. The intrinsic carrier concentration is 109 cm-3, bandgap is 2
eV and ε r =15. Sketch the band diagram for a reverse bias of 2V, and calculate the values
of band edges with respect to the quasi-Fermi levels far from the junction. Calculate the
depletion charge per cm2 on the n-side. If an electron at the conduction band edge on the
p-side goes over to the n-side without scattering, calculate its velocity. Electron and hole
effective masses = 0.4m 0 .

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N a = 1016 cm -3
N d → high
 qφ F,p   φ F,p 
   
p = Na = nie  kT 
⇒ 10 cm = 10 cm
16 -3
( 9 -3
)⋅e  0.026 eV 
⇒ φ F,p = 0.42 eV
Eg
φ F,n = = 1 eV
2
Barrier height Dφ = φ F,n + φ F,p = 1.42 eV
N a x p = N d x n , where x p , x n are the depletion layer widths on the p, and n sides
⇒ N d x n ≈ N a W, since x p + x n = W and x p ? x n

In equilibrium, W =
2εS ( Dφ+Vr )
=
(
2 × 15 × 8.86 ×10−14 F/cm × (1.42 V + 2 V ) )
qN a (1.6 ×10 −19
C ) × (10
16
cm -3 )
= 7.54 ×10−5 cm = 0.75 μm
( ) (
⇒ N d x n = 7.54 ×10−5 cm × 1016 cm -3 = 7.54 ×1011 cm -2 )
Energy of electron from E c on n-side, E = Dφ+Vr = 1.42 eV + 2 eV

⇒v=
2E
=
(
2 × 3.42 ×1.6 ×10−19 J ) = 1.73 ×10 6
m/s
−31
m* 0.4 × 9.11× 10 kg

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Prob. 5.11
In a p-n junction, the n-side doping is five times the p-side doping. The intrinsic carrier
concentration =1011 cm-3 and bandgap is 2eV at 100 C. If the built-in junction potential is
0.65V, what is the doping on the p- side? If the relative dielectric constant of this
semiconductor is 10, what is the depletion capacitance at 2 V reverse bias for a diode of
cross-sectional area of 0.5 cm2? Draw a qualitatively correct sketch of the band diagram
and label the depletion widths and voltage drops for this bias.

kT  N a ( 5N a ) 
V0 = ln   = 0.65 V
q  ni2 
 373 K  
= ( 0.026 eV )   ln ( 5 ) + 2 ln ( N a ) − ln 10 
 ( )
2
11

 300 K 
1
⇒ ln ( N a ) = ( 20.11 + 49.05 ) = 34.58
2
⇒ N a = 1.04 ×1015 cm -3
⇒ N d = 5N a = 5.2 ×1015 cm -3
2εS ( Dφ+Vr )  N a +N d 
W=  
q  Na Nd 

( )
2 × 10 × 8.85 ×10−14 F/cm ( 0.65 V + 2 V )  1.04 + 5.2 
= −19  -3 
1.6 ×10 C  1.04 × 5.2 ×10 cm 
15

= 1.84 μm

Cd =
εA
=
( )
10 × 8.85 ×10−14 F/cm × 0.5 cm 2
= 2.4 nF
W 1.84 ×10−4 cm

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Prob. 5.12
For three p-n junction diode samples A, B, and C, acceptor and donor carrier concentrations are
the same of 1015/cm3 and 1018 /cm3, respectively. Find the contact potentials for these three
devices at temp 300 K. Intrinsic carrier concentrations for the three samples are 1.5 x 1010 /cm3, 2
x 1010 /cm3, and 2 x 106/cm3. Comment on the comparison of estimated contact potentials.

For junction sample A:

KT  N a .N d 
 = 0.0259. ln 10 .10 20  = 0.0687eV
15 18

V0 = . ln 
q  ni 2
  2.25 x10 

For junction sample B:

KT  N a .N d  
 = 0.0259. ln 10 15
.1018

V0 = . ln   = 0.3815eV
 
26
q  ni 2
 4 x10

For junction sample C:

KT  N a .N d  
 = 0.0259. ln 10 15
. 1018

V0 = . ln  = 0.0796eV
q  n   4 x 10 12

 i 2


A has the lowest junction potential, where B has the highest one.

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Prob. 5.13
Find the electron diffusion and drift currents at x n in a p+-n junction.
q ⋅V xn
Dp - kT
I p (x n ) = q ⋅ A ⋅ ⋅ pn ⋅ e ⋅e
kT Lp
for V ?
Lp q
q ⋅V
Dp
I = I p (x n = 0) = q ⋅ A ⋅ ⋅ pn ⋅ e kT
Lp
Assuming space charge neutrality, the excess hole distribution is equal to the
excess electron distribution δn(x n ) = δp(x n )
q ⋅V
dδp Dn - Lx n
I n (x n )diff = q ⋅ A ⋅ Dn ⋅ = - q⋅A⋅ ⋅ p n ⋅ e kT ⋅ e p
dx n Lp
q ⋅V
pn   - Lx n  - Lx n 
I n (x n )drift = I - I n (x n )diff - I p (x n ) = q ⋅ A ⋅ ⋅  D n ⋅ 1 - e p  + D n ⋅ e p  ⋅ e kT
Lp    

Prob. 5.14
=
A Si junction =
has N a 1017 1
cm3
and N d 1016 1
cm3
. Find (a)E F , V o , and band diagram
and (b) compare this value of V o to that from Equation 5-8.
pp 1017 1
(a) E ip - E F = kT ⋅ ln = 0.0259eV ⋅ ln cm3
= 0.407eV
ni 1.5 ⋅10 10 1
cm3

nn 1016 cm1 3
E F - E in = kT ⋅ ln = 0.0259eV ⋅ ln = 0.347eV
ni 1.5 ⋅1010 cm1 3
q ⋅ Vo = 0.407eV + 0.347eV = 0.754eV

0.754eV

0.407eV
0.347eV

Na Nd 1017 cm1 3 ⋅1016 cm1 3

(b) q ⋅ Vo = kT ⋅ ln = 0.0259eV ⋅ ln = 0.754eV
( )
2
n i2 1.5 ⋅1010 1 3 cm

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Prob. 5.15
Find V 0 , x n0 , x p0 , Q + , and ε O in Si at 300 K.

kT N N
V0 = ln a 2 d
q ni
4 ⋅1018 1
⋅1016 1
V0 = 0.0259V ln cm3 cm3
(1.5 ⋅10 10 1
cm3
) 2

V0 = 0.8498 V

2 ∈Si V0  1 1 
=W  + 
q  Na Nd 
W = 0.334 μm

W
x n0 = = 0.333 μm
Nd
1+
Na
W
x p0 = = 0.83 nm
Na
1+
Nd

Q + = −Q − = q A x n0 N d = 0.107 nC
−q N x
ε = d n0 =−5.1 ⋅104 V/cm
∈Si
0

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Prob. 5.16
Calculate the electron diffusion current density.

Diffusion length for electrons, Ln = Dn .τ n = 49 x 25 x10 −9 = 35 x10 −3 cm .

2

Excess carriers, δn = i .(e − 1).e − x / L

n qV / KT n

Na

d (δn ) 1 ni   qV   − x
2

= − . .exp  − 1. exp 

dx Ln N a   KT    Ln 

At x = 2Ln

d (δn ) 1 n   qV  
2

= − . i .exp  − 1 . exp(− 2 )
dx Ln N a   KT  
1 1x10 20   0.2  
= .exp  − 1. exp(− 2 ) = 8.687 x10
6
−3
.
35 x10 10   0.0259  
17

Thus the electron diffusion current density,

d (δn )
J n (diffusion ) = q.Dn . = 1.6 x10 −19 x 49 x8.687 x10 6 = 681.099 x10 −3 Amp
dx

Prob. 5.17
Estimate the current density under a reverse bias of 0.3 V at 300 K temperature.

For a Si n+p junction, diffusion length,

Ln = Dn .τ n = 400 x10 x10 − 9 = 63.25 x10 − 3 cm.

Current density,
I D  qV  −19 400  − 0.3 
J= = q. n .n p . exp  = 1.6 x10 x x 2 x1017 x exp 
A Ln  KT  63.25 x10 − 3  0.0259 
= 1.886 x10 − 6 Amp

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Prob. 5.18
Estimate the expressions for developed electric field of a p-n junction where the space
charge profile at depletion region is given as p(x) = q.h(2x+3), where x is a distance of the
device from physical contact at x = 0 and h is a constant.

In depletion region space charge profile only exist, which is p(x) =q.h(2x+3). So E only exists at
dE ρ q.h(2 x + 3)
that region. By constant equation, = =
dx ∈ s ∈s

q.h q.h 2
E ( x) =
∈s
∫ (2 x + 3)dx , E ( x) =
∈s
[ x + 3 x] + c ------ (1)
By dep. Approximation, at x=xpo, E=0, so from (1)
q.h
E ( x = xpo) = 0 = [ xpo 2 − 3 xpo] + c
∈s
q.h
c= [3 xpo − xpo 2 ]
∈s
So Electric Field will be;
q.h 2 q.h
E ( x) = [ x + 3x] + [3 xpo − xpo2 ]
∈s ∈s

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Prob. 5.19

(a) Find C j for V=-10V for a Si p+-n junction 10−2 cm 2 in area with N d = 1015 1
cm3
.
On the n side,

Ei 0.843 eV
Ec
EF 0.555 eV
0.288 eV
EF
Ei
Ev
Nd 1015 cm1 3
E F - E in = kT ⋅ ln = 0.0259eV ⋅ ln = 0.288eV
ni 1.5 ⋅1010 cm1 3
On the p-side, E ip - E F = 1
2 ⋅ E g ≅ 0.555eV
q ⋅ Vo = 0.555eV+0.288eV = 0.834eV
1 1

A  2 ⋅ q⋅∈⋅N d  10 cm  2 ⋅1.6 ⋅10 C ⋅11.8 ⋅ 8.85 ⋅10 cm ⋅1015 2

-2 -19
2 -14 F 1
2
Cj = ⋅  = ⋅ cm3
 = 2.78 ⋅10 F
-11

2  Vo - V  2  0.834eV - (-10eV)
 

(b) What is W just prior to avalanche?

From Figure 5-22, V br =300V from Figure 5-22
1 1

 2⋅∈s ⋅Vbr   2 ⋅11.8 ⋅ 8.85 ⋅10-14 cm

2 F
⋅ 300V  2
 = 1.98 ⋅10 cm = 20μm
-3
W=   =  
 q ⋅ Nd  1.6 ⋅10 C ⋅10 cm3
-19 15 1
 

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Prob. 5.20
In a p+n junction diode, in which side penetration depth will be larger? Estimate and
compare the ratio of the penetration depths on both sides of the junction if the acceptor
concentration is twice than that for the donor concentration. Compare the generated
electric fields on both sides also.

Penetration depth will be larger in the lightly doped side i.e. n side here. Here,
N a = 2N d .
1/ 2
 2εV0  
1/ 2
Na / 2  2 εV 
x p0 =  .  = . 0 
 q  N a
( N a
+ N a
/ 2 )   3 q.N a 
1/ 2
 2εV0  
1/ 2
Na  8 εV 
Similarly, xn 0 =  .  = . 0 
 q  N a / 2.( N a + N a / 2 )   3 q.N a 
xn 0 8 3
So the ratio of the penetration depths will be, = x = 4 , so, xn 0 = 4 x p 0
x p0 3 2
E0 n N
Similarly the ratio of electric fields will be, = d .4 = 2 , so, E0 n = 2.E0 p
E0 p 2.N d

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 lOMoARcPSD|9352029

Prob. 5.21
Calculate the depletion width, peak electric field, and depletion capacitance under 60 V
of reverse bias.

Depletion region will be mostly extended on n-side. Vtotal = Vr + V0 ≅ Vr = 60V .

2.ε si .Vtotal  1 1 
Depletion width, W = . +  , since N a is very high, so 1/N a can be
q  a
N N d 

negligible.

2.ε si .Vtotal  1  2 x11.8 x8.854 x10 −14 x60

Thus, W = .  = −19 16
= 2.799 x10 −4 cm
q  Nd  1.6 x10 x10

2.Vtotal 2 x60
Electric field, E = = −4
= 42.87 x10 4 V / cm
W 2.799 x10
ε si . A 11.8 x8.854 x10 −14 x 2 x10 −4
Capacitance, C j = = = 7.46 pF
W 2.79 x10 −4

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 lOMoARcPSD|9352029

Prob. 5.22
Calculate the injection efficiency for a diode at x n = 0

Here, D p = 2.D n ; Lp = 2.L n and p n = 2.n p

So efficiency can defined as,

IP
D
(
q. A. n .n p . e qV / KT − 1
Ln
) Dn
Ln
.n p
= = = 1/ 3
I  Dn
q. A. .n p +
Dp
. pn . e (
 qV / KT
−1 
 Dn
 n
L
.n p +
2.Dn
2 . L

.2.n p 

)
 n
L L p  n

Prob. 5.23
(A & B) Find the excess carrier concentration. Find the electron and hole concentration
at x = 2 L n and 2 L p.

Given that;
A=10-4 cm2
Na= 1017/ cm3 and Nd=1018/ cm3
FB = 1V

(a) For Electrons:

µn=1350cm2/v-sec
KT
Dn = mn = 34.97cm 2 / sec
q

Ln = Dn.τn = 34.97 × 10 × 10 −9 = 18.70 × 10 −3 cm

Minority Carriers;
ni 2 2.25 × 10 20
pn = = 17
= 2.25 × 10 3 / cm3
Na 10
Excess Carriers;
qV
Dpn = pn.e KT = 32.97 × 1019 / cm 3

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 lOMoARcPSD|9352029

− xp
Ln
Using x p = 2Ln , In( xp) = q. A .e Ln
= .4048 × 10 −17 Amp
τn

(b) For holes:

µp=400cm2/v-sec
KT
Dp = mp = 10.36cm 2 / sec
q

Lp = Dp.τp = 10.36 × 10 × 10 −9 = 10.18 × 10 −3 cm

Minority Carriers;
ni 2 2.25 × 10 20
np = = 18
= 2.25 × 10 2 / cm3
Nd 10
qV
Excess Carriers; Dnp = np.e KT = 32.97 × 1018 / cm 3
− xp
Lp
Using x p = 2Lp , In( xn = 2 Lp ) = q. A .e Lp = .22 × 10 −17 Amp .
τp

Prob. 5.24
For the given p-n junction, calculate the built-in potential, the zero-bias space charge
width, and the current for a 0.7V forward bias.
(a) Calculate built-in potential:
for N a =1015 1
cm3
and N d =1017 1
cm3

kT  N a N 
Vo = φFP +φFN = ⋅ ln +ln d 
q  ni ni 
 1015 1017 
Vo = 0.026V ⋅ ln +ln 
 1.5 ⋅10 1.5 ⋅1010 
10

Vo = 0.026V ⋅ [11.1+15.7 ] = 0.70V

(b) Calculate total width of space change region

2 ∈s  N +N 
W= ⋅ a d  ⋅ Vo
q  Na Nd 
Thermal equilibrium means total potential φT across the P-N junction equals V o

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 lOMoARcPSD|9352029

2 ∈s  N a +N d 
W= ⋅  ⋅ Vo
q ⋅ Na  Na Nd 

2 ∈s  N 
W= ⋅ 1+ a  ⋅ Vo
q ⋅ Na  Nd 

(
2 ⋅ 8.85 ⋅10-14 F
⋅11.8 )⋅ 1  1015 1 
1 + 17  ⋅ 0.70V
cm cm3
W=
1.6 ⋅10−19 C 1015 1
cm3  10
1
cm3 
W = 1.3 ⋅10-8 cm 2
V ⋅ [1 + .01] ⋅ 0.70V = 9.6 ⋅10-5 cm = 0.96 microns

(c) Forward bias current:

cm 2 cm 2
μ n = 1500 μ p = 450 τ = 2.5 ⋅10-3s n i = 1.5 ⋅1010 1
V ⋅s V ⋅s cm3

 kT  cm 2 cm 2
Dn = μ n   = 1500 ⋅ 0.026V = 38.9
 q  V ⋅s s
 kT  cm 2 cm 2
Dp = μ p   = 450 ⋅ 0.026V = 11.7
 q  V ⋅s s
L n = D n ⋅ τ = 0.31cm L p = D p ⋅ τ = 0.17cm
 DP Dn 
( )
J0 = q ⋅ ni2 ⋅  + 
 Nd ⋅ LP Na ⋅ Ln 
( )( ) ⋅ ( 6.88 ⋅10- ) = 4.5 ⋅10-
2
J 0 = 1.6 ⋅10-19 C ⋅ 1.5 ⋅1010 1
cm3
18 cm 4
s + 1.25 ⋅10-15 cm 4
s
12 C
cm 2 ⋅s

 qkT⋅V    0.026V
0.7V 

( )( )

I = A ⋅ J 0 ⋅  e -1 = 0.001cm 2 ⋅ 4.5 ⋅10-12 C
cm 2 ⋅s
⋅ e  
-1 = 2.2 ⋅10-3 A
   
Most of the current is carried by electrons because N a is less than N d . To double the
electron current, halve the acceptor doping.

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 lOMoARcPSD|9352029

Prob. 5.25
Suppose in a p+n diode the n region and the p region thickness are 20 µm and 5µm,
respectively. What will be the RB applied to obtain a breakdown for this diode?
[Given: ∈ =11.8, Nd = 1015/ cm3]

X no = 20µm for p+n, N a >>N d

Thus x no = W.N a / (N a +N d ) ~W
Hence W=20µm

2 ∈ Vo 1 2 × 11.8 × 8.854 × 10 −14 × Vp 1

Thus W = [ ] ;Vb~Vo, So, 20 × 10 −6 = [ 15 ]
q Nd 1.6 × 10 −19 10

Vp = 5.534 × 10 −3 , Vp=30.63µV

Prob. 5.26
In a p-n junction diode operating under certain reverse bias Vr, if Vr is increased to 3 Vr,
what will be the impact on the following parameters?

a) Depletion Width (increases)

b) Contact potential (increases)
c) Junction capacitance (decreases)
d) Probability of breakdown (increases)

Prob. 5.27
Sketch the equilibrium band diagram with precise values for the bar.
on right side
Ei -E F
p = 10 18 1
cm3
= 10 16 1
cm3
⋅e kT

600K  1018 1 
E i -E F = 0.026eV ⋅ ⋅ ln  16 cm3
 = 0.24eV
300K  10 1 
 cm3  EC
on left side
Na ฀ ni Ei
2 32 1
n 10 0.24eV
p = Na + = 2 ⋅1016
i 1
cm3
+ cm6
0.046eV EF
p p
EV
Ei - E F
p = 2.4 ⋅10 16 1
cm3
= 10 16 1
cm3
⋅e kT

600K
E i - E F = 0.026eV ⋅ ⋅ ln ( 2.4 ) = 0.046eV
300K

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 lOMoARcPSD|9352029

Prob. 5.28
Plot I p and I n versus distance.
Assume that the minority carrier mobilities are the same as the majority carrier mobilities
given in Figure 3-23a.
μ n = 700 cm μ p = 250 cm
2 2

V⋅s V⋅s

D n = 0.0259V ⋅ 700 cm D p = 0.0259V ⋅ 250 cm

2 2 2 2
cm cm
V⋅s = 18.13 s V⋅s = 6.475 s

Ln = Dn τn = 18.13 cms ⋅10-6s = 2.54 ⋅10-3cm L p = D p τ p = 6.475 cms ⋅10-6s = 4.26 ⋅10-3cm
2 2

n i2 2.25 ⋅1020 cm1 6

pn = = 17 1
= 2.25 ⋅103 cm1 3 n p = p n = 2.25 ⋅103 cm1 3
Na 10 cm3
qV 0.7
Dp n = p n ⋅ e kT = 2.25 ⋅103 cm1 3 ⋅ e 0.0259 = 1.23 ⋅1015 1
cm3
Dn p = Dp n = 1.23 ⋅1015 1
cm3

xp xp xn xn
L - - Lp - -
I n (x p ) = qA n e Ln = 5 ⋅10-5 A ⋅ e 2.54⋅10 cm = 8.38 ⋅10-5 A ⋅ e
-3 Lp 4.26⋅10-3cm
I p (x n ) = qA e
τn τp

I = 5 ⋅10-5 A + 8.38 ⋅10-5 A = 133.8μA

I n (x n ) = I - I p (x n ) I p (x p ) = I - I n (x p )

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 lOMoARcPSD|9352029

Prob. 5.29
In a p+n diode reverse biased at 5 V, the generated capacitance is 20 pF. If the doping of
the p side is doubled and the bias is change to 20 V, what will be the change in
capacitance? If now the bias is changed to 100 V, then what will be the change?

We know capacitance,
1/ 2
 Na 
C ja   C j , original = 20 pF
 Vr 
1/ 2 1/ 2
 2.Na   Na 
C j , mew _ 1a   =   = No change in capacitance
 r 
2 V  r 
V
1/ 2
 2.Na  1 1
C j , mew _ 2a   = .C j , original = .20 pF = 8.94 pF
 10 .Vr 5 5

Prob. 5.30
Find the minimum width to ensure avalanche breakdown.

V br = 300 V,
Minimum width
1/ 2
2 x16 x8.854 x10 −14 x300 
1/ 2 
 2εVr 
W =  =  = 51.54 x10 − 3 cm.
−19 15
 q.N d   1.6 x10 x 2 x10 

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 lOMoARcPSD|9352029

Prob. 5.31
Calculate the capacitance.

ε S .A q.N d .ε s
Capacitance, C = = A.
W 2(V0 + VR )

KT  N a .N d 
 = 0.0259. ln 10 .1026  = 0.0438V
18 16

Contact potential, V0 = ln
q  ni 2

  4 x10 

1.6 x10 −19 x1016 x11.8 x8.854 x10 −14

For V r = 1V: C = 10 x = 14.165 x10 −4 F
−4

2(0.0438 + 1)

1.6 x10 −19 x1016 x11.8 x8.854 x10 −14

For V r = 3V: C = 10 x = 7.59 x10 −4 F
−4

2(0.0438 + 3)

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 lOMoARcPSD|9352029

Prob. 5.32
Calculate the Debye length for a Si p-n junction on the p-side with N a = 1018 cm-3 and N d
= 1014, 1016, and 1018 cm-3. Compare with the calculated value of W for each case.
Find L D and W, leaving N d as a variable.
1 1 1
 ∈s ⋅kT  2  ∈S kT  2 11.8 ⋅ 8.85 ⋅10-14 F  2 - 12 411
LD =  2  = ⋅  = cm
⋅ 0.0259eV  N d = 1
 q ⋅ Nd   q ⋅ Nd q   1.6 ⋅10-19 C  N d2
1 1

 2⋅∈s ⋅kT  N a ⋅ N d   1 1  2  Nd   -18 3 1  2

W=  ⋅  ln  ⋅  +   =581 1
⋅  ln  ⋅ 10 cm + 
 225 cm3 
2 2 2

 q n i   N a N d    
cm
  
1
Nd

Plugging the doping values into these equations:

N d (cm-3) L D (cm) W (cm) L D / W (%)
1014 4.11 x 10-5 3.01 x 10-4 7.3
1016 4.11 x 10-6 3.27 x 10-5 8.0
1018 4.11 x 10-7 4.93 x 10-6 12.0

The Debye length varies from 7 to 12 percent of W across this doping range.

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Prob. 5.33

(A & B) Find the reverse saturation current. Calculate the forward current.

KT
(a) Dp = mp = 11.66cm 2 / sec On the n side
q
KT
Dn = mn = 38.85cm 2 / sec On the p side
q

Lp = Dp.τp = 11.66 × 2 × 10 −9 = 4.83 × 10 −3 cm

Ln = Dn.τn = 38.85 × 2 × 10−9 = 8.814 × 10−3 cm

ni 2 2.25 × 10 20
pn = = = 2.25 × 10 3 / cm3
Na 1017
p n = np
Dp Dn
I 0 = q. A[ pn + np ] = 24.56 x10 − 9 Amp.
Lp Ln

 − qV   − 0.2 
 nkT  − 9  1.5×0.0259 
(b) I = Io'. e − 1 = .24.56 × 10 . e − 1 = 4.702 x10 − 6 Amp
   
   

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Prob. 5.34
Solve the diffusion equation to find the excess hole concentration.

By solving the diffusion equation, we get;

d 2δp ( xn) ∂p ( xn)
=
dxn 2 Lp 2
− xn + xn

δp( xn) = A.e Lp

+ B.e Lp

At xn=0, δp ( xn = 0) = Dpn = A + B -------(1)

At xn=Lp, δp ( xn = Lp ) = 0 = Ae −1 + Be1 -------(2)

Solving equation 1 and 2e have;

A = 1.2254 D pn &
B = -.02254 D pn

Hence Excess hole concentration;

− xn + xn

δp( xn) = (1.2254.e Lp

− .02254.e Lp
) × Dpn

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 lOMoARcPSD|9352029

Prob. 5.35
Solve for the electron carrier concentration and current density at the p region for narrow
base diode with high recombination at the edges of depletion n region.

At the quasi neutral region, assuming almost no recombination;

d 2 Dn − G
= Where G is the generation rate
dx 2 Dn
− Gx 2
Dn( x) = + Ax + B
2 Dn
At the edge of depletion region,
qV
Dnp ( x = 0) = npo(e − 1)
KT
Excess minority carrier concentration=0 at x=W= Depletion width boundary
qV
Thus, B = npo(e − 1) and;
KT
− GW 2 qV
0= + AW + npo(e − 1)
2 Dn KT

This simplifies to;

− GW qV
A= + npo(e − 1) / W
2 Dn KT
Substituting these values in the general solution, the carrier concentration can be
estimated as,
− Gx 2 − GW qV qV
Dn( x) = +[ + npo(e − 1) / W ]x + npo(e − 1)
2 Dn 2 Dn KT KT
The current density will become,
dDn( x) Gx GW qV
Jn( x) = qDn. = q.Dn[ + − npo(e − 1) / W ]
dx Dn 2 Dn KT
qGW qV
Simplifying this gives, Jn( x) = q.Gx + + q.Dn.npo(e − 1) / W ] .
2 KT

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Prob. 5.36
Find the reverse current density due to diffusion.

 qV    −5  
We know current density, J = J 0 exp − 1 = J 0 exp  − 1 ≈ − J 0
 KT    0.0259  
 Dn .n p 0 D p . pn0 
Where, J 0 = q  + .
 Ln L p 

 Dn .n p 0 
For an n+p junction, p no will be negligible and thus J 0 = q   . With an
 L n 

ni 2
acceptor doping of 5x10 /cm , n p 0 =
17
= 2.33 x10 2 /cm3.
3

p p0

Since, Dn = 10 cm2/sec and Ln = 45mm , thus,


−19 10 x 2.33 x10
2
−14 Amp/cm2.
J 0 = 1.6 x10   = 8.3 x10
 0.0045 

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 lOMoARcPSD|9352029

Prob. 5.37

Sketch the voltage across a 1 kΩ resistor in series with a diode (offset 0.4 V, resistance
400 Ω) and a voltage source of 2 sin ωt.
An ideal diode is a perfect short (resistance is zero) when the voltage across the diode is
greater than the offset voltage. If the voltage is less, the diode is a perfect open
(resistance is infinite). Thus,
v s < 0.4, v 0 = 0
(v s − 0.4) ⋅ 1kΩ
v s > 0.4, v 0 =
1kΩ + 400Ω

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Prob. 5.38
Plot current versus voltage.

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Prob. 5.39
Find Q p and I when holes are injected from p + into a short n-region of length l, if δp
varies linearly.
 ⋅ Δp n

Q p = q ⋅ A ⋅ ∫ ∂p ⋅ dx n = q ⋅ A ⋅
0
2
A ⋅ D p ⋅ Δp n
I = I p ( x n =0 ) = - q ⋅


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 lOMoARcPSD|9352029

Prob. 5.40
Find the hole distribution and the total current in a narrow-base diode.
d 2 ∂p ( x n ) ∂p ( x n )
2
=
dx n L2p
xn xn

∂p ( x n ) =Ce
- Lp Lp
+De

Boundary conditions:
When x n = 0, ∂p = Δp n = C + D
- l l
When x n = l , ∂p = 0 = Ce LP
+ De LP
Thus,
l
Δp n e LP
C = l - l
e LP - e LP

- l
-Δp n e LP

D= Δp n − C= l - l
e LP - e LP

Plugging C and D back into the solution

 Ln 
l - x xn - l
-
Δp n e p − e
Lp

 
a) ∂p ( x n ) = l - Ll
L
e p -e p

d∂p ( x n )   e Lp + e − Lp 
l l
 -q ⋅ A ⋅ D p ⋅ Δp n
I= -q ⋅ A ⋅ D p ⋅  = ⋅ - l 
 e Lp - e − Lp 
l

 dx n  x →0
n
Lp

 q ⋅ A ⋅ Dp l   qV 
b) I=  ⋅ p n ⋅ ctnh  ⋅  e kT -1
 L p L p   

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 lOMoARcPSD|9352029

Prob. 5.41
For the narrow-base diode, find the current components due to recombination in n, and
recombination at the ohmic contact.
The steady-state charge stored in the excess hole distribution is
l l - Ln L 
n x x

Q p = q ⋅ A ∫ ∂p(x n ) ⋅ dx n = q ⋅ A ∫ C ⋅ e p + D ⋅ e p  ⋅ dx n
0 0
 
Q p = q ⋅ A ⋅ L p -C e( ) ( )
-1 +D e p -1 
l
- l
Lp L

 
L
l - l
Lp
e p+e -2
Q p = q ⋅ A ⋅ L p ⋅ Δp n ⋅ l - l
Lp Lp
e -e
The current due to recombination in n is

Q p qAL p p n  l l   qV 
=  ctnh − csch   e kT − 1
τp τp  Lp L p   
Lp Dp
using =
τp Lp
Qp qAD p p n  l   qV 
 tanh   e kT − 1
τp L p  L p   
The current due to recombination at x n = l,
Qp  qAL p p n l   qV 
=I−  csch   e kT − 1
τp  τ p L p   
These correspond to the base recombination and collector currents in the p-n-p BJT with
V CB = 0 given in Equation 7-20.

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Prob. 5.42

If the n region of a graded p+-n has N d =Gxm, find ε , ε ( x) , Q, and C j .

o

dε
0 W

∫ dε =
q q q
a) = N d = Gx m → G ∫ x m dx
dx ∈ ∈ εo
∈ 0

-ε o =
q W m+1
G
∈ m+1

εo = - q G W
m+1

∈ m+1
ε x

b) ∫ dε = G ∫ x dx → ε(x) = ( )
q m qG
x m+1 - W m+1
0
∈ W ∈ (m+1)
Vo W
ε = - dV → - ∫ dV = ∫ ε ⋅ dx
dx V 0
W
qG  x m+2

- (Vo - V) =  - W m+1 ⋅ x 
∈ (m+1)  m+2 0
qG  W m+2 (m+2) ⋅ W m+2  qG -(m+1)W m+2
- (Vo - V) =  -  = ⋅
∈ (m+1)  m+2 m+2  ∈ (m+1) m+2
qG ⋅ W m+2
Vo - V =
∈ (m+2)
W
qAGW m+1
c) Q = qA ∫ Gx m dx =
0
m+1
m+1

m+1
m+1
m+2 m+2  (V -V)⋅∈⋅(m+2)  m+2
W = (W ) = o 
 qG 
m+1
qAG  (Vo -V)⋅∈⋅(m+2)  m+2
Q= ⋅ 
m+1  qG 

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m+1

d) Q = qAG ⋅  (Vo -V)⋅∈⋅(m+2) 

m+2
 
m+1  qG 
m+1
-1
dQ qAG  (Vo -V)⋅∈⋅(m+2)  m+2 ∈⋅(m+2)
= ⋅  ⋅
d(Vo -V) m+1  qG  qG
-1
dQ A⋅∈⋅(m+2)  (Vo -V)⋅∈⋅(m+2)  m+2
= ⋅ 
d(Vo -V) m+1  qG 
1
1
  m+2
dQ
(
= A ⋅ ∈m+2 ) m+2 ⋅
qG

d(Vo -V)  (Vo -V)⋅∈⋅(m+2) 
1
dQ  qG⋅∈  m+1 m+2
= A ⋅ 
d(Vo -V)  (Vo -V) ⋅ (m+2) 

Prob. 5.43
Draw the equilibrium band diagram and explain whether the junction is a Schottky or
ohmic contact. Describe how to change the metal work function to switch the
contact type.

Na 1018 cm1 3
φs = c +0.55eV+kT ⋅ ln = 4eV+0.55eV+0.0259eV ⋅ ln = 5.02eV
ni 1.5 ⋅1010 cm1 3
For this p-type semiconductor, (Φ m = 4.6eV) < (Φ s = 5.02eV); so, the junction is a
Schottky barrier.

The junction becomes an ohmic contact at Φ m > Φ s . The metal work function must be
raised to 5.02eV to make this an ohmic contact.
Schottky Barrier Ohmic Contact

4eV 4eV

4.6eV

5.02eV 5.02eV 5.02eV

EFn EFn

EFs EFs

Metal Si Metal Si

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Prob. 5.44
Use InAs to make an ohmic contact to GaAs.

For further discussion, see Woodall, et al., J. Vac. Sci. Technol. 19. 626(1981).

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Prob. 5.45
Draw the equilibrium band diagram (a) and the band diagrams for 0.3V forward bias
and 2.0V reverse bias (b).

po 1017 cm1 3
a) E i - E F = kT ⋅ ln = 0.0259eV ⋅ ln = 0.407eV
ni 1.5 ⋅1010 cm1 3

b)

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Prob. 5.46
We want to make a Schottky diode on one surface of an n-type semiconductor, and an
ohmic contact on the other side. The electron affinity is 5 eV, bandgap is 1.5 eV, and the
Fermi potential is 0.25 eV? What should be values of work functions of the two metals.
(Give your answer as greater than or less than certain values.) Sketch the band diagram of
the structure.

Prob. 5.47
A semiconductor heterojunction is made between the following materials, A and B with
the following parameters:

E G (eV) χ (eV) Doping (cm-3) Length (μm) L n , p (μm) n i (cm-3) τ n,p (μs)
A: 2 4 N A =1020 0.5 10 108 10
B: 1 5 N D =1016 0.1 100 1010 1

Draw the equilibrium band diagram, marking off the band edge energies and E F , with
respect to the vacuum level.
Calculate the current density if the junction is forward biased such that the minority
concentrations are increased by a factor of 106.
(HINT: Use appropriate approximations. There is a lot of extraneous information here;
the answer is very simple. Remember that this is a p+-n junction, and the length of the
semiconductors is << diffusion length; the minority carrier concentration is zero at the
ohmic contacts at both ends of the device.)

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( )
Δp n = p n ×106 = 104 cm -3 ×106 = 1010 cm -3
L p = D p τ p ⇒ D p = L p 2 τ p = 100 cm 2 /s
 1010 cm -3 
I ≈ I p = qD p
dp
( ) (
= 1.6 ×10−19 C × 100 cm 2 /s × 
× −4 )
 = 16 mA/cm
2

dx  0.1 10 cm 
δp(x) is linear because length of n-region = L p

Prob. 5.48
A p-n junction diode has a doping concentration of 1017 cm-3 on the p- side, and double
that on the n-side. The intrinsic carrier concentration is 1011 cm-3, bandgap is 2 eV and
ε r = 15. Sketch the band diagram in equilibrium, and mark off the values of band edges
with respect to the Fermi level and the depletion widths on both sides.
Repeat the above for a heterojunction, where the bandgap on the n-side is reduced to 1
eV, and the electron affinity on the n-side is 4 eV. Other parameters are kept the same.
Bandoffsets are the same for conduction and valence band across the heterojunction.

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kT  N a N d  (
 1017 cm -3 × 2 ×1017 cm -3
 ) ( )  = 0.734 V
V0 = ln   = ( 0.0259 V ) × ln 
( ) 
2
q  ni2  10 11
cm -3
 
12
 2εV0  N a +N d 
W=   
 q  N a N d  

( ) ( ) ( ) 
12
 2 × 15 × 8.85 ×10−14 F/cm × ( 0.734 V )  1017 cm -3 + 2 ×1017 cm -3
=  


1.6 ×10−19 C
 (
 1017 cm -3 × 2 ×1017 cm -3 ) ( ) 
= 0.135 μm
kT  N a   1017 cm -3 
ϕFp = E ip - E F = ln   (
= 0.0259 V )  11 -3  = 0.358 V
× ln
q  ni   10 cm 
p-side:
E C - E F = 1 eV + 0.358 eV = 1.358 eV
E F - E V = 0.642 eV
kT  N d   2 ×1017 cm -3 
ϕFn = ln   = ( 0.0259 V ) × ln  11 -3  = 0.376 V
q  ni   10 cm 
n-side:
E C - E F = 1 eV - 0.376 eV = 0.624 eV
E F - E V = 1 eV + 0.376 eV = 1.376 eV
Nd 2
xp = W = W = 90 nm
Nd + Na 3
Na 1
xn = W = W = 45 nm
Nd + Na 3

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Heterojunction:

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