Professional Documents
Culture Documents
References
1. G. Keiser: Optical Fiber Communications,
4th edition, McGraw Hill, 2010
2. J. Hecht: Understanding Fiber Optics, 4th
ed, Prentice Hall, 2002 1 2
where
– the wavelength
C – the light velocity in free space
f – the frequency in Hz Light spectrum (wavelength in m)
3x108
(i) f 6
1.93x1014 Hz 193 THz
1.55x10
3x108
(ii) f 2
6x109 Hz 6 GHz
5x10
Refractive Index
Refractive index of a medium is defined as:
Velocity of light in vaccum C
n (2)
Velocity of light in the medium V
11 12
Step-Index Fiber: 2.1 Ray Analysis of Optical Fibre
When a light ray encounters a boundary of two different media,
part of the ray is reflected back into the first medium and the
remainder is bent (or refracted) as it enters the second medium.
n2<n1
n2 Refracted
r ray
Graded-Index Fiber: Material
boundary
n1 in in
Reflected
Incident
ray
ray
Refraction and reflection in a step-index fibre where the Refraction and reflection in a step-index fibre where the
light enters the fiber from the air of refractive index n0 light enters the fiber from the air of refractive index n0
17 18
(1) If > c, total internal reflection occurs and By applying Snell’s law at the air-fiber interface, and relating
light reflects back into the core. It is this it with sin c n2 / n1 , we can determine the max. entrance
total internal reflection that confines light in angle:
glass optical fiber. n0 sin in, max n1 sin rc
(2) If < c, the light is refracted out of the core
and is lost at the cladding. Since r c c , we have
2
When n1 ≈ n2,
Ans: 1
in,max sin ( 1.5 1.485 ) 12.2
2 2
and 1
21 22
Numerical Aperture (NA) of a fiber is defined As increases, NA and hence in, max
as: increases. This means more light power will
NA n0 sinin, max n12 n22 =n1 2 (8) be coupled into the fiber, but increases the
multipath dispersion too.
NA represents the light gathering capability of
an optical fiber. Typically
0.1 NA 0.3
Array of Multipath
Which corresponds to angles
BL (3x105)/(1.48-1.477)
n2 C 1 3 105
BL 4 105 (bits / s) km = 1.0x108 (bit/s)•km = 100 (Mb/s)•km
n1 (n1 n2 ) 1.5 (1.5 1)
For L = 10 km, we have Bmax = 10 Mb/s.
For L = 10 km, we have Bmax = 40 kb/s.
That is, this fiber can transmit data at a bit rate
This means the fiber can transmit data at a bit rate less
less than 10 Mb/s over a distance of 10 km.
than 40 kb/s over a distance of 10 km.
33 34
n n
1 2
n1
where is the index profile parameter, and a is
the radius of the fiber core
35 36
Ray Paths in GI-MMF
- The ray propagating along the fiber axis 2.4 Single Mode Fiber (SMF)
takes the shortest path but travels most
slowly since the index is largest along the The ray analysis gives a very simplified view
axis. of light transmission through optical fibers.
- Hence it is possible for all rays to arrive
together at the fiber output by a suitable
choice of n(r). An optical fiber is a waveguide that transmits
lightwaves in one or more transmission
- As such, intermodal dispersion can be made modes (which are the solutions of Maxwell’s
much smaller than that of step-index fibers.
equations).
39 40
The figure below shows the field patterns of several
Propagation Modes Supported in Fibers
transverse electric (TE) modes.
Whether a mode can be supported by the fiber is described
The order of the mode is equal to the number of electric by two parameters:
field zeros across the guide (in the y direction)
guide.
(1) Normalized propagation constant, b
( / k o ) n2
b (12)
n1 n2
where
ko=2/ (known as wave number)
is the propagation constant, whose value depends on
the mode number.
2 a 2 2 a
V n1 n22 NA (13)
2.405
45 46
Example 5: Given a fiber with n1=1.5 and 2.5 Dispersion in Single Mode Fibers (SMFs)
n2=1.495 and core radius a=4m, find the cutoff - In multimode fibers (MMFs), the intermodal
wavelength for single mode operation. dispersion leads to considerable broadening
of short optical pulses.
Ans: from (13), - The main advantage of SMFs is that inter-
modal dispersion is absent.
2a n12 n22 2x3.14x4 1.52 1.4952 - However, pulse broadening does not
c 1.28m
V 2.405 disappear altogether in SMFs.
- The speed of light (group velocity)
This means that the fiber operates as a single
associated with the fundamental mode (HE11)
mode fiber for >1.28 m. is frequency (i.e wavelength) dependent,
since refractive index is a function of
47 48
wavelength
- As a result, different spectral components of
the pulses travel at slightly different group
velocities. This phenomenon is referred to as
group-velocity dispersion (GVD) or
intramodal dispersion, or chromatic
dispersion.
- Chromatic dispersion causes broadening of
optical pulses as they propagate along a
single mode fiber, and hence limits the
information carrying capacity of SMF fibers.
1
BL (17)
D
55 56
Example 6: An optical source with a center ZD can be made in the range of 1.3 to 2 m by careful
control of the fiber core diameter 2a and fiber index
wavelength of 1550nm has a spectral width of profile.
2nm. Given that Dm=22 ps/nm/km and Dw=-6
ps/nm/km at wavelength 1550nm of a SMF.
Find (i) the pulse broadening, (ii) the max bit
rate, if the fiber length is 10 Km.
Ans:
(i) t D L 22 6 (10)(2) 320 ps
57 58
Pin
FLoss 10log L (dB) (18)
Pout
The relation between Pin and Pout can also be
where is the fiber attenuation coefficient, and
expressed as:
is given in the units of dB/km.
Pout Pin 1 0 L /10 ( 1 9)
61 62
63
3. Optical Transmitters 3.1 Light Emitting Diodes (LEDs)
An optical transmitter converts an electrical A LED is a pn junction semiconductor that
signal into an optical signal.
emits light when it is forward biased.
- This optical signal is then transmitted
through an optical fiber, which serves as
a communication channel.
- The major components of optical
transmitters are optical sources.
How the light is generated in LEDs? - For pure (intrinsic) crystal at low temperature
(T=0), the valence band is fully filled and the
- The conduction properties of semiconductor conduction band is empty (no free electron).
can be explained by the energy band.
- The gap between conduction and valence
- Considering Si atom, it has four electrons in bands is called energy gap or band gap. For
its outer shell and forms covalent bond with example, at room temperature, the energy
its neighboring atoms in a crystal. gap is:
~ 1.12 eV for Si; 1.42 eV for GaAs.
> 9 eV for insulators.
~ 0 eV for metals (conduction and valence
bands are overlapped).
66 67
- The conduction can be greatly enhanced by Example of bond structure of extrinsic
adding impurity to intrinsic semiconductor.
semiconductors
This process is called doping and the doped
semiconductor is called extrinsic materials.
Conduction
electron
As is added. Four
electrons are
bonded by covalent
bond and one loosely
N-type Si doped with As bonded electron is
available for
conducting.
68 69
70 71
- A depletion region is created where no - A forward voltage decreases the barrier by
mobile carrier exists and an electric field raising the potential energy of the n side and
(potential barrier) is formed. lowering that of the p side. As a result, free
electrons and free holes will have sufficient
- Many useful components are made by the pn energy to move into the junction.
junction such as diode, transistor, light
emitting diodes, laser diode, photo-diodes, - When a free electron meets a free hole in the
etc.. junction, the electron can fall to the valence
band and recombine with the hole. Energy
- When no voltage is applied, free electrons in is released when this occurs.
the n region and free holes in the p region do
not have enough energy to climb over the
barrier and move into the p or n regions.
72 73
- The energy released in the transition is Table 1: Typical values of and Eg for
converted to optical energy (light) in the form several semiconductor compounds
of a photon. The band gap energy and the
wavelength of the light is related by: Materials Wavelength Bandgap
hC (m) Energy
Eg hf (20)
Eg (eV)
GaAs 0.9 1.4
AlGaAs 0.8 – 0.9 1.4 – 1.55
where h is plank constant, h=6.62x10-34 Js.
or InGaAs 1.0 – 1.3 0.95 – 1.24
1.24 InGaAsP 0.9 – 1.7 0.73 – 1.35
(m) (21)
Eg (eV)
74 75
Optical Characteristics of LEDs
Two Different Types of LEDs
In principle, LEDs emit light in all directions. In practice, (1) Optical power of LEDs
LEDs are designed and packaged such that light is emitted
from the surface or edge.
Note:
Output optical
power increases
with the drive
current, but
decreases with the
temperature.
where
is in m,
kT is the thermal energy in eV,
Typical spectral patterns (i.e. emission spectra) of both edge- T is the absolute temperature,
emitting and surface-emitting LEDs, where the peak wavelength is at
=1.31 m k is Bolzmann constant, k=1.38x10-23 J/K.
79
78
- Since 2, long-wavelength LEDs have larger 3.2 Laser Diodes (LDs)
spectral width than short-wavelength LEDs. The structure of a semiconductor laser diode
e.g., at T=300K, =30 nm for =0.8 m and (LD) is much like that of an LED.
=78 nm for =1.3 m
- The spectral width of an optical source is
important because it determines the contribution
to the chromatic dispersion, which in turn
determines the transmission capacity.
- Since LEDs have a wide spectral width, they are
used for short-distance optical transmission
(e.g, customer access networks).
80 81
- When I < Ith the LD is not lasing. It is Optical Spectrum of a typical FP-LD
operating like an LED that produces
incoherent light.
f
- When I > Ith the LD is lasing and is producing
coherent light which has both narrow
spectral range and beam width.
- In this region the relationship between P and
I is linear. Fabry-Perot cavity
modes (longitudinal
- Ith should be very low so as to prevent (spectral) modes)
overheating of the LD.
86 87
In the FP cavity, only frequencies satisfying ∆
2 L 2m (23) Gain profile (Gaussian)
can exist in the cavity.
where
is the propagation constant and =2n/,
n is refractive index of the active region,
L is the cavity length,
m is positive integer.
What are the problems with multi-longitudinal Single Mode Laser Diode (SM-LD)
mode operation? - To have a single (longitudinal) mode
- Pulse spreading in the fiber, resulting in operation, we need to have a mechanism to
lower transmission capacity strengthen a specific mode (wavelength),
while suppressing all other modes
- Mode-partition noise due to fluctuation in the (wavelengths).
spectral excitation modes.
- A widely used technique: integrate a
distributed grating in the laser. This grating
For high speed network, single longitudinal acts as a filter which permits only a single
operation is essential. wavelength to be lasing.
- This laser is called distributed-feedback laser
(DFB-LD)
90 91
DFB Laser and its Spectrum Typical Characteristics of Light Sources
Property LED MM-LD SM-LD
Spectral width (nm) 20 – 60 1–5 <1
Output power (mW) < 0.5 1 – 10 1 – 10
Modulation < 0.2 1–5 >5
Bandwidth (GHz)
Compatible fiber MMF MMF and SMF SMF
Coupling efficiency Very low (<10%) High (~80%) Very high (>80%)
Temperature sensitivity Low High High
(a) A DFB-LD and (b) its spectrum 92 MM-LD: Multi-mode LD SM-LD: Single-mode LD 93
94 95
What are the requirements for Photo-detectors?
Types of Photo-Diodes (PDs)
- High sensitivity in the operating wavelength range.
(i) pin-PD and
- Very low noise.
(ii) Avalanche photo-diode (APD).
- Sufficient bandwidth to handle the desired data
rate.
- Insensitive to variations in temperature.
The pin-PD is the most common type
- Compatible with the physical dimensions of the
optical fibre.
- Low cost compared to the other components of the
system.
- Long operating life.
96 97
Photons 98 99
Quantum efficiency, , defined as:
No. of No.
electron-hole pairs generated
of incident photons
I /e
Pinp/(hf) (26)
where
- This process is called absorption, i.e., electrons in the valence Ip - photo-current flowing in the circuit
band absorb power from the incoming photons and get excited
to the conduction band Pin - the incident optical power
- This process generates free electron-hole pairs which gives e - the electron charge (=1.6x10-19C)
rise to a current flow (i.e. photocurrent) in the external circuit.
- As these carriers flow through the material, some electron-hole
f - the optical frequency
pairs will recombine and hence disappear.
100 101
Ip Pin (27)
e
(2 8 )
hf
Typical values of :
=0.65 A/W for Si at =0.90 m
=0.45 A/W for Ge at =1.3 m
=0.60 A/W for In at =1.3 m 102