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Ice3br0665j 1
Ice3br0665j 1
3, 19 Nov 2012
CoolSET®-F3R
ICE3BR0665J
N e v e r s t o p t h i n k i n g .
CoolSET®-F3R
ICE3BR0665J
Revision History: 2012-11-19 Datasheet
Previous Version: 2.2
Page Subjects (major changes since last revision)
27 revised outline dimension for PG-DIP-8 package
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or
the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://
www.infineon.com
Edition 2012-11-19
Published by
Infineon Technologies AG,
81726 Munich, Germany,
© 2012 Infineon Technologies AG.
All Rights Reserved.
Legal disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
CoolSET®-F3R
ICE3BR0665J
Typical Application
+
Snubber Converter
CBulk DC Output
85 ... 270 VAC
-
CVCC
VCC Drain
Startup Cell
Power Management
PWM Controller
Current Mode
CS
Precise Low Tolerance Peak CoolMOS®
Current Limitation
RSense
FB
Active Burst Mode
GND Control
Unit BA
Auto Restart Mode
CoolSET®-F3R ™
(Jitter Mode)
Type Package Marking VDS FOSC RDSon1) 230VAC ±15%2) 85-265 VAC2)
ICE3BR0665J PG-DIP-8 ICE3BR0665J 650V 65kHz 0.65 74W 49W
1)
typ @ Tj=25°C
2)
Calculated maximum input power rating at Ta=50°C, Ti=125°C and without copper area as heat sink. Refer to input power curve for other Ta.
GND (Ground)
Drain 4 5 Drain
GND pin is the ground of the controller.
Figure 2
Version 2.3
+
Converter
CBulk Snubber DC Output
85 ... 270 VAC VOUT
-
CVCC
VCC Drain
5.0V Power Management CoolMOS®
3.25kΩ
Startup Cell
Internal Bias Voltage 5.0V
Reference
IBK T2
Auto-restart
Enable BA T3 0.6V
GND
Signal Power-Down
#1 CBK Undervoltage Lockout
T1 Reset 18V
0.72 PWM
#2 10.5V
TAE VCC Oscillator Section
&
C1 G1
Duty Cycle
Representative Blockdiagram
20.5V max
0.9V 1 ms
VCC counter
C2 120us Blanking Time Soft Start Soft-Start Clock
25.5V Comparator
Thermal Shutdown Soft Freq. jitter
Tj >130°C & Gate
Start FF1
0.33V C7 G7 Driver
C9 Block
1 S
R Q &
S1 G8
1 G9
7
C3 G2
4.0V PWM
5.0V Comparator
& C8
4.0V Spike Auto
RFB C4 20ms G5 Blanking Restart
Blanking 30us Mode Propagation-Delay
Compensation
Representative Blockdiagram
25kΩ Time
Active Burst Vcsth Leading 10kΩ CS
C5 20ms Blanking & 0.67V
FB Mode C10 Edge
1.35V Time
2pF G6 Blanking 1pF D1
x3.3 220ns RSense
C6a PWM OP &
3.5V G10 C12
& 0.34V
Current Limiting
C6b G11 Current Mode
3.05V
Control Unit
ICE3BR0665J / CoolSET®-F3R ( Jitter Mode ) ™
19 Nov 2012
CoolSET®-F3R
Representative Blockdiagram
ICE3BR0665J
CoolSET®-F3R
ICE3BR0665J
Functional Description
3 Functional Description
All values which are used in the functional description In order to increase the robustness and safety of the
are typical values. For calculating the worst cases the system, the IC provides Auto Restart protection. The
min/max values which can be found in section 4 Auto Restart Mode reduces the average power
Electrical Characteristics have to be considered. conversion to a minimum level under unsafe operating
conditions. This is necessary for a prolonged fault
condition which could otherwise lead to a destruction of
3.1 Introduction the SMPS over time. Once the malfunction is removed,
CoolSET®-F3R jitter series (ICE3BRxx65J) is the latest normal operation is automatically retained after the
version of the CoolSET®-F3 for the lower power next Start Up Phase. To make the protection more
application. The particular enhanced features are the flexible, an external auto-restart enable pin is provided.
built-in features for soft start, blanking window and When the pin is triggered, the switching pulse at gate
frequency jitter. It provides the flexibility to increase the will stop and the IC enters the auto-restart mode after
blanking window by simply addition of a capacitor in BA the pre-defined spike blanking time.
pin. In order to further increase the flexibility of the The internal precise peak current control reduces the
protection feature, an external auto-restart enable costs for the transformer and the secondary diode. The
features are added. Moreover, the proven outstanding influence of the change in the input voltage on the
features in CoolSET®-F3 are still remained such as the maximum power limitation can be avoided together
active burst mode, propagation delay compensation, with the integrated Propagation Delay Compensation.
modulated gate driving, auto-restart protection for Vcc Therefore the maximum power is nearly independent
overvoltage, over temperature, over load, open loop, on the input voltage, which is required for wide range
etc. SMPS. Thus there is no need for the over-sizing of the
The intelligent Active Burst Mode can effectively obtain SMPS, e.g. the transformer and the output diode.
the lowest Standby Power at light load and no load Furthermore, this F3R series implements the
conditions. After entering the burst mode, there is still a frequency jitter mode to the switching clock such that
full control of the power conversion to the output the EMI noise will be effectively reduced.
through the optocoupler, that is used for the normal
PWM control. The response on load jumps is optimized
and the voltage ripple on Vout is minimized. The Vout is
3.2 Power Management
on well controlled in this mode. Drain VCC
The usually external connected RC-filter in the
feedback line after the optocoupler is integrated in the Startup Cell
IC to reduce the external part count.
Furthermore a high voltage Startup Cell is integrated
into the IC which is switched off once the Undervoltage
Lockout on-threshold of 18V is exceeded. This Startup Depl. CoolMOS™
Cell is part of the integrated CoolMOS®. The external
startup resistor is no longer necessary as this Startup
Cell is connected to the Drain. Power losses are
Power Management
therefore reduced. This increases the efficiency under
light load conditions drastically. Internal Bias
Undervoltage Lockout
18V
Adopting the BiCMOS technology, it can increase the
10.5V
design flexibility as the Vcc voltage range is increased
to 25V.
The CoolSET®-F3R has a built-in 20ms soft start
5.0V
function. It can further save external component Power-Down Reset Voltage
Reference
counts.
There are 2 modes of blanking time for high load
jumps; the basic mode and the extendable mode. The Auto Restart
blanking time for the basic mode is set at 20ms while Mode
the extendable mode will increase the blanking time by
Soft Start block Active Burst
adding an external capacitor at the BA pin in addition to Mode
the basic mode blanking time. During this blanking time
window the overload detection is disabled. With this
concept no further external components are necessary
to adjust the blanking window. Figure 3 Power Management
The Undervoltage Lockout monitors the external Current Mode means the duty cycle is controlled by the
supply voltage VVCC. When the SMPS is plugged to the slope of the primary current. This is done by comparing
main line the internal Startup Cell is biased and starts the FB signal with the amplified current sense signal.
to charge the external capacitor CVCC which is
connected to the VCC pin. This VCC charge current is
controlled to 0.9mA by the Startup Cell. When the VVCC Amplified Current Signal
exceeds the on-threshold VCCon=18V the bias circuit
are switched on. Then the Startup Cell is switched off
by the Undervoltage Lockout and therefore no power FB
losses present due to the connection of the Startup Cell
to the Drain voltage. To avoid uncontrolled ringing at
switch-on, a hysteresis start up voltage is implemented. 0.67V
The switch-off of the controller can only take place
when VVCC falls below 10.5V after normal operation
was entered. The maximum current consumption
Driver t
before the controller is activated is about 150μA.
When VVCC falls below the off-threshold VCCoff=10.5V,
the bias circuit is switched off and the soft start counter
is reset. Thus it is ensured that at every startup cycle
the soft start starts at zero. ton
The internal bias circuit is switched off if Auto Restart
Mode is entered. The current consumption is then
reduced to 150μA. t
Once the malfunction condition is removed, this block
will then turn back on. The recovery from Auto Restart Figure 5 Pulse Width Modulation
Mode does not require re-cycling the AC line. In case the amplified current sense signal exceeds the
When Active Burst Mode is entered, the internal Bias is FB signal the on-time Ton of the driver is finished by
switched off most of the time but the Voltage Reference resetting the PWM-Latch (see Figure 5).
is kept alive in order to reduce the current consumption The primary current is sensed by the external series
below 450μA. resistor RSense inserted in the source of the integrated
CoolMOS®. By means of Current Mode regulation, the
secondary output voltage is insensitive to the line
3.3 Improved Current Mode
variations. The current waveform slope will change with
the line variation, which controls the duty cycle.
Soft-Start Comparator
The external RSense allows an individual adjustment of
the maximum source current of the integrated
CoolMOS®.
PWM-Latch To improve the Current Mode during light load
FB
conditions the amplified current ramp of the PWM-OP
C8 R Q
is superimposed on a voltage ramp, which is built by
Driver the switch T2, the voltage source V1 and a resistor R1
(see Figure 6). Every time the oscillator shuts down for
S Q maximum duty cycle limitation the switch T2 is closed
by VOSC. When the oscillator triggers the Gate Driver,
0.67V T2 is opened so that the voltage ramp can start.
In case of light load the amplified current ramp is too
small to ensure a stable regulation. In that case the
PWM OP Voltage Ramp is a well defined signal for the
comparison with the FB-signal. The duty cycle is then
x3.3 CS controlled by the slope of the Voltage Ramp.
By means of the time delay circuit which is triggered by
Improved the inverted VOSC signal, the Gate Driver is switched-off
Current Mode until it reaches approximately 156ns delay time (see
Figure 7). It allows the duty cycle to be reduced
continuously till 0% by decreasing VFB below that
Figure 4 Current Mode threshold.
3.3.1 PWM-OP
The input of the PWM-OP is applied over the internal
Soft-Start Comparator
leading edge blanking to the external sense resistor
PWM Comparator RSense connected to pin CS. RSense converts the source
current into a sense voltage. The sense voltage is
FB amplified with a gain of 3.3 by PWM OP. The output of
C8 the PWM-OP is connected to the voltage source V1.
PWM-Latch The voltage ramp with the superimposed amplified
Oscillator current signal is fed into the positive inputs of the PWM-
Comparator C8 and the Soft-Start-Comparator (see
VOSC Figure 6).
time delay
circuit (156ns)
Gate Driver 3.3.2 PWM-Comparator
The PWM-Comparator compares the sensed current
0.67V signal of the integrated CoolMOS® with the feedback
10kΩ signal VFB (see Figure 8). VFB is created by an external
X3.3 optocoupler or external transistor in combination with
the internal pull-up resistor RFB and provides the load
T2 R1 information of the feedback circuitry. When the
V1
PWM OP amplified current signal of the integrated CoolMOS®
C1 exceeds the signal VFB the PWM-Comparator switches
off the Gate Driver.
Voltage Ramp
5V
Figure 6 Improved Current Mode
RFB Soft-Start Comparator
VOSC FB
PWM-Latch
C8
max.
Duty Cycle
PWM Comparator
0.67V
Voltage Ramp t
Optocoupler
PWM OP
CS
0.67V
X3.3
FB
Improved
Gate Driver t Current Mode
156ns time delay
3.4 Startup Phase When the VVCC exceeds the on-threshold voltage, the
IC starts the Soft Start mode (see Figure 10).
The function is realized by an internal Soft Start
S o ft S ta rt c o u n te r resistor, an current sink and a counter. And the
amplitude of the current sink is controlled by the
counter (see Figure 11).
S o ftS
Soft Start finish
S o ft S ta rt
5V
S o ft S ta rt
R SoftS
S o ft-S ta rt SoftS
C o m p a ra to r
G a te D riv e r
C7 &
G7
VSoftS
tSoft-Start
VSOFTS32
V SoftS
V SoftS2 t
V SoftS1 Gate
Driver
t
Figure 10 Soft Start Phase
Figure 12 Gate drive signal under Soft-Start Phase
Within the soft start period, the duty cycle is increasing 3.5 PWM Section
from zero to maximum gradually (see Figure 12).
In addition to Start-Up, Soft-Start is also activated at 0.75 PWM Section
each restart attempt during Auto Restart.
Oscillator
VSoftS
Duty Cycle
tSoft-Start max
VSOFTS32
Clock
Frequency
Jitter
VFB t
Soft Start
4.0V Block FF1
S Gate Driver
Soft Start 1
Comparator R &
G8 Q
PWM G9
VOUT t Comparator
Current
VOUT Limiting
tStart-Up CoolMOS®
Gate
t
Figure 14 PWM Section Block
Figure 13 Start Up Phase
3.5.1 Oscillator
The Start-Up time tStart-Up before the converter output The oscillator generates a fixed frequency of 65KHz
voltage VOUT is settled, must be shorter than the Soft- with frequency jittering of ±4% (which is ±2.6KHz) at a
Start Phase tSoft-Start (see Figure 13). jittering period of 4ms.
By means of Soft-Start there is an effective A capacitor, a current source and current sink which
minimization of current and voltage stresses on the determine the frequency are integrated. In order to
integrated CoolMOS®, the clamp circuit and the output achieve a very accurate switching frequency, the
overshoot and it helps to prevent saturation of the charging and discharging current of the implemented
transformer during Start-Up. oscillator capacitor are internally trimmed. The ratio of
controlled charge to discharge current is adjusted to
reach a maximum duty cycle limitation of Dmax=0.75.
Once the Soft Start period is over and when the IC goes
into normal operating mode, the switching frequency of
the clock is varied by the control signal from the Soft
Start block. Then the switching frequency is varied in
range of 65KHz ± 2.6KHz at period of 4ms.
PWM Latch
VCC FF1
Current Limiting
PWM-Latch
1
Propagation-Delay
Gate Compensation
CoolMOS®
Vcsth
C10 Leading
Edge
Blanking
PWM-OP 220ns
Gate Driver
&
G10 C12
Figure 15 Gate Driver 0.34V
The driver-stage is optimized to minimize EMI and to
provide high circuit efficiency. The switch on speed is
1pF
slowed down before it reaches the integrated Active Burst 10k
CoolMOS® turn on threshold. That is a slope control of Mode D1
the rising edge at the output of the driver (see Figure
16).
CS
(internal)
Figure 17 Current Limiting Block
VGate
There is a cycle by cycle peak current limiting operation
realized by the Current-Limit comparator C10. The
source current of the integrated CoolMOS® is sensed
ca. t = 130ns via an external sense resistor RSense. By means of
RSense the source current is transformed to a sense
voltage VSense which is fed into the CS pin. If the voltage
5V VSense exceeds the internal threshold voltage Vcsth, the
comparator C10 immediately turns off the gate drive by
resetting the PWM Latch FF1.
t A Propagation Delay Compensation is added to
support the immediate shut down of the integrated
Figure 16 Gate Rising Slope CoolMOS® with very short propagation delay. Thus the
influence of the AC input voltage on the maximum
Thus the leading switch on spike is minimized.
output power can be reduced to minimal.
Furthermore the driver circuit is designed to eliminate
cross conduction of the output stage. In order to prevent the current limit from distortions
caused by leading edge spikes, a Leading Edge
During power up, when VCC is below the undervoltage
Blanking is integrated in the current sense path for the
lockout threshold VVCCoff, the output of the Gate Driver
comparators C10, C12 and the PWM-OP.
is set to low in order to disable power transfer to the
secondary side. The output of comparator C12 is activated by the Gate
G10 if Active Burst Mode is entered. When it is
activated, the current limiting is reduced to 0.34V. This
voltage level determines the maximum power level in
Active Burst Mode.
3.6.1 Leading Edge Blanking For example, Ipeak = 0.5A with RSense = 2. The current
sense threshold is set to a static voltage level Vcsth=1V
VSense without Propagation Delay Compensation. A current
ramp of dI/dt = 0.4A/µs, or dVSense/dt = 0.8V/µs, and a
propagation delay time of tPropagation Delay =180ns leads
Vcsth to an Ipeak overshoot of 14.4%. With the propagation
tLEB = 220ns
delay compensation, the overshoot is only around 2%
(see Figure 20).
V
1,3
t 1,25
1,2
Figure 18 Leading Edge Blanking
VSense
1,15
t
Figure 19 Current Limiting
The overshoot of Signal2 is larger than of Signal1 due Signal1 Signal2
to the steeper rising waveform. This change in the t
slope depends on the AC input voltage. Propagation Figure 21 Dynamic Voltage Threshold Vcsth
Delay Compensation is integrated to reduce the
overshoot due to dI/dt of the rising primary current.
Thus the propagation delay time between exceeding
the current sense threshold Vcsth and the switching off
of the integrated CoolMOS® is compensated over
temperature within a wide range. Current Limiting is
then very accurate.
3.7 Control Unit After the 30us spike blanking time, the Auto Restart
Mode is activated.
The Control Unit contains the functions for Active Burst For example, if CBK = 0.22uF, IBK = 13uA
Mode and Auto Restart Mode. The Active Burst Mode
and the Auto Restart Mode both have 20ms internal Blanking time = 20ms + CBK x (4.0 - 0.9) / IBK = 72ms
Blanking Time. For the Auto Restart Mode, a further In order to make the startup properly, the maximum CBK
extendable Blanking Time is achieved by adding capacitor is restricted to less than 0.65uF.
external capacitor at BA pin. By means of this Blanking The Active Burst Mode has basic blanking mode only
Time, the IC avoids entering into these two modes while the Auto Restart Mode has both the basic and the
accidentally. Furthermore those buffer time for the extendable blanking mode.
overload detection is very useful for the application that
works in low current but requires a short duration of 3.7.2 Active Burst Mode
high current occasionally.
The IC enters Active Burst Mode under low load
conditions. With the Active Burst Mode, the efficiency
3.7.1 Basic and Extendable Blanking Mode increases significantly at light load conditions while still
maintaining a low ripple on VOUT and a fast response on
load jumps. During Active Burst Mode, the IC is
BA
5.0V
controlled by the FB signal. Since the IC is always
active, it can be a very fast response to the quick
# CBK IBK
change at the FB signal. The Start up Cell is kept OFF
in order to minimize the power loss.
0.9V
1
S1
G2
Internal Bias
Current
C3
Spike 20 ms Blanking Limiting
4.0V
Blanking Time &
30us
G10
&
4.0V
4.0V 20ms G5 Auto C4
C4 Blanking Restart
Time Mode
Active
FB Burst
C5 & Mode
FB &
20ms Active 1.35V G6
C5 Blanking G6 Burst
1.35V Time Mode
C6a
Control Unit
3.5V
&
Figure 22 Basic and Extendable Blanking Mode C6b G11
There are 2 kinds of Blanking mode; basic mode and 3.05V
Control Unit
the extendable mode. The basic mode is just an
internal set 20ms blanking time while the extendable
Figure 23 Active Burst Mode
mode has an extra blanking time by connecting an
external capacitor to the BA pin in addition to the pre-
set 20ms blanking time. For the extendable mode, the The Active Burst Mode is located in the Control Unit.
gate G5 is blocked even though the 20ms blanking time Figure 23 shows the related components.
is reached if an external capacitor CBK is added to BA
pin. While the 20ms blanking time is passed, the switch 3.7.2.1 Entering Active Burst Mode
S1 is opened by G2. Then the 0.9V clamped voltage at The FB signal is kept monitoring by the comparator C5.
BA pin is charged to 4.0V through the internal IBK During normal operation, the internal blanking time
constant current. G5 is enabled by comparator C3.
counter is reset to 0. Once the FB signal falls below
1.35V, it starts to count. When the counter reach 20ms
VOUT t
3.7.3.2 Auto Restart without extended blanking a trigger signal to the base of the externally added
time transistor, TAE at the BA pin. When the function is
enabled, the gate drive switching will be stopped and
then the IC will enter auto-restart mode if the signal
persists. To ensure this auto-restart function will not be
Auto Restart mis-triggered during start up, a 1ms delay time is
Mode Reset
VVCC < 10.5V
implemented to blank the unstable signal.
1ms VCC undervoltage is the Vcc voltage drop below Vcc
UVLO
counter
turn off threshold. Then the IC will turn off and the start
Auto-restart BA up cell will turn on automatically. And this leads to Auto
Enable Stop
Signal C9
8us
gate Restart Mode.
0.3V Blanking Auto Restart
Time
drive
mode
Short Optocoupler also leads to VCC undervoltage as
there is no self supply after activating the internal
TAE 25.5V
reference and bias.
120us
C2 Blanking
VCC
Time
VCC Spike
& Blanking
C1
20.5V 30us
G1
softs_period
4.0V
C4
Voltage
FB Thermal Shutdown Reference
Tj >140°C
Control Unit
4 Electrical Characteristics
Note: All voltages are measured with respect to ground (Pin 5). The voltage levels are valid if other ratings are
not violated.
4.3 Characteristics
1)
The parameter is not subjected to production test - verified by design/characterization
Charging current at BA pin IBK 10 13.0 16.9 μA Charge starts after the
built-in 20ms blanking
time elapsed
Thermal Shutdown1) TjSD 130 140 150 °C Controller
Note: The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP.
10
1
ID [A]
0.1
0.01 tp = 0.01ms
tp = 0.1ms
tp = 1ms
tp = 10ms
tp = 100ms
0.001 tp = 1000ms
DC
0.0001
1 10 100 1000
V DS [V]
100
SOA temperature derating coefficient [%]
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient/Case temperature Ta/Tc [deg.C]
Ta : DIP, Tc : TO220
1.4
1.2
Allowable Power Dissipation, Ptot [W]
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140
Ambient temperature, Ta [deg.C]
700
660
V BR(DSS) [V]
620
580
540
-60 -20 20 60 100 140 180
T j [°C]
54
Input power (85~265Vac) [W]
48
42
36
PI-001-ICE3BR0665J_85Vac
30
24
18
12
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Ambient Temperature [°C]
Figure 31 Input power curve Vin=85~265Vac; Pin=f(Ta)
100
90
80
Input power (230Vac) [W]
70
PI-002-ICE3BR0665J_230Vac
60
50
40
30
20
10
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Ambient Temperature [°C]
7 Outline Dimension
PG-DIP-8
(Plastic Dual In-Line Outline)
8 Marking
Marking
TR1
C13 C15
* C14 C23
R24
IC12 IC21
R25
F3 CoolSET schematic for recommended PCB layout
General guideline for PCB layout design using F3/F3R CoolSET® (refer to Figure 35):
1. “Star Ground “at bulk capacitor ground, C11:
“Star Ground “means all primary DC grounds should be connected to the ground of bulk capacitor C11
separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET® device
effectively. The primary DC grounds include the followings.
a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11.
b. DC ground of the current sense resistor, R12
c. DC ground of the CoolSET® device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector
of IC12 should be connected to the GND pin of IC11 and then “star “connect to the bulk capacitor ground.
d. DC ground from bridge rectifier, BR1
e. DC ground from the bridging Y-capacitor, C4
2. High voltage traces clearance:
High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur.
a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm
b. 600V traces (drain voltage of CoolSET® IC11) to nearby trace: > 2.5mm
3. Filter capacitor close to the controller ground:
Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller pin
as possible so as to reduce the switching noise coupled into the controller.
Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 35):
1. Add spark gap
Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated
charge during surge test through the sharp point of the saw-tooth plate.
a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1:
Gap separation is around 1.5mm (no safety concern)
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