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  • Numerical Study On The Influence of Piezoelectric Polarization On The Performance of P-On-N (0001) - Face Gan/Ingan P-I-N Solar Cells

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    Numerical Study On The Influence of Piezoelectric Polarization On The Performance of P-On-N (0001) - Face Gan/Ingan P-I-N Solar Cells

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    © All Rights Reserved
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    of 1

    http://www.ijert.

    org/call-for-paper/international-journal-of-engineering-call-for-papers

    http://oswaty.com/pages/page/shma2el

    http://www.ucsolar.org/files/public/documents/12-9-11%20present%20final_Robert
    %20Farrell.pdf

    http://scitation.aip.org/content/aip/journal/apl/103/3/10.1063/1.4813623?ver=pdfcov

    Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar
    cells

    http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=5773076&url=http%3A%2F
    %2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D5773076

    Numerical Study on the Influence of


    Piezoelectric Polarization on the
    Performance of p-on-n (0001)-Face
    GaN/InGaN p-i-n Solar Cells
    http://scitation.aip.org.sci-hub.org/content/aip/journal/jap/111/11/10.1063/1.4723831

    InGaN solar cell requirements for high-efficiency integrated III-nitride/nonIII-nitride tandem


    photovoltaic devices

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