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TOSHIBA 2SA1962 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2S8A1962 POWER AMPLIFIER APPLICATIONS © High Collector Voltage : Vogo=—230V (Min.) © Complementary to 2805242 © Recommend for 8UW High Fidelity Audio Frequency Amplifier Output Stage, MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC sympot | RATING | UNIT (Collector Base Voltage Vono | —230_[ V Collector-Emitter Voltage Vero | —230 | V Emitter-Base Voltage ViBo = [Vv Collector Current Ic =i5 [a Base Current 1p. =is_ [7A al 2. COLLECTOR (HEAT SINK oe Po 10 | w 3 Siren , [Junction Temperature Ty 10 | C Storage Temperature Range Taig | =85~150 | *C ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight : 4.78 (Typ.) CHARACTERISTIC SYMBOL ‘TEST CONDITION Man. | Typ. |MAX.|UNIT Collector Cutoff Current Topo | Vop=—280V, im=0 a Emitter Cutoff Current Tepo | VEB=—8V, Io=0 = [= =s0T a Collector-Emitter Breakdown _ Voltage V (pr) oB0 |Io= -50mA, Ip=0 -230] — | — | v bee) = DC Current Gain (Note) _|VCR= ~5V, To=~1A 55] — | 160 hp 2) | VoE=—6V, Io=—7A 35] 60; — Collector Emitter Saturation | Voltage Vor (eat) [lo=-8A. — |-15|-30] v Base-Emitter Voltage Vie = [=n =r 0 [Transition Frequency i = 30 | = Note : hFE (1) Classification R: 55~110, 0 : 80~160 seman RNR ei al fe ae eae UAL nahin yet Te a al ace ge ea Ba adh eS ph dl ger cS ite tte atras Ot rnd ony a» an fm ple oo gods, No cermin is navn by Tobe aint Sat re atts allen ts nn TOA COMOHATION oie 7997-02-03 12 TOSHIBA Io - Vor fcoxnow excrren| fre=2s'e Yt COLLECTOR-EMIFTER VOLTAGE Vox () VCE (sat) — Ic 5 i i E é i coy aren 8 ~-00r OF =T 0) =100 couscroctmest 16 SAFE OPERATING AREA ~SFic wae PULSED ~ Tie MAR. i : He go 2°)" Silene Pulse Tense ccunvis mst Be ‘Writ INCREASE 18 =H Tie 3001605 COLLECTOREMITTER VOLTAGE Vor () Weuo MAK a8 COLLECTOR CURRENT Ie DC CURRENT GAIN ore 2SA1962 Ie ~ Var IMMON EMITTER fees -8V =| _ asf tensor ff 226 oe a0 og 1 BASEEMITTER VOLTAGE Vag W) pg ~ Ie

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