Dual Self-Protected

Low-Side Driver with

Temperature and Current
Limit

NCV8402D, NCV8402AD
www.onsemi.com
NCV8402D/AD is a dual protected Low−Side Smart Discrete device.
The protection features include overcurrent, overtemperature, ESD and
V(BR)DSS
integrated Drain−to−Gate clamping for overvoltage protection. This (Clamped) RDS(ON) TYP ID MAX
device offers protection and is suitable for harsh automotive
42 V 165 mW @ 10 V 2.0 A*
environments.
*Max current limit value is dependent on input
Features condition.
• Short−Circuit Protection Drain
• Thermal Shutdown with Automatic Restart
• Overvoltage Protection Overvoltage
Gate Protection
• Integrated Clamp for Inductive Switching Input
• ESD Protection
• dV/dt Robustness ESD Protection
• Analog Drive Capability (Logic Level Input)
• NCV Prefix for Automotive and Other Applications Requiring Temperature Current Current
Limit Limit Sense
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Source
Compliant

Typical Applications MARKING DIAGRAM

• Switch a Variety of Resistive, Inductive and Capacitive Loads 8
SO−8 xxxxxx
• Can Replace Electromechanical Relays and Discrete Circuits 8 CASE 751 ALYW
• Automotive / Industrial 1 STYLE 11 G
1
xxxxxx = V8402D or 8402AD
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package

PIN ASSIGNMENT
1 8
Source 1 Drain 1
Gate 1 Drain 1
Source 2 Drain 2
Gate 2 Drain 2

ORDERING INFORMATION

Device Package Shipping†

NCV8402DDR2G SOIC−8 2500/Tape & Reel
NCV8402ADDR2G (Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

October, 2019 − Rev. 6 NCV8402D/D
 NCV8402D, NCV8402AD

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped VDSS 42 V
Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW) VDGR 42 V
Gate−to−Source Voltage VGS "14 V
Continuous Drain Current ID Internally Limited
Total Power Dissipation @ TA = 25°C (Note 1) PD 0.8 W
@ TA = 25°C (Note 2) 1.62

Maximum Continuous Drain, both channels on @ TA = 25°C (Note 1) ID 1.87 A

@ TA = 25°C (Note 2) 2.65

Thermal Resistance Junction−to−Ambient Steady State (Note 1) RqJA 157 °C/W

Junction−to−Ambient Steady State (Note 2) RqJA 77

Single Pulse Drain−to−Source Avalanche Energy EAS 150 mJ

(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W)

Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms) VLD 55 V
Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted onto min pad FR4 PCB, (Cu area = 40 sq. mm, 1 oz.).
2. Surface−mounted onto 1″ sq. FR4 board (Cu area = 625 sq. mm, 2 oz.).

+
ID

DRAIN

IG

GATE VDS
+

SOURCE
VGS

− −

Figure 1. Voltage and Current Convention

www.onsemi.com
2
 NCV8402D, NCV8402AD

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Test Condition Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25°C V(BR)DSS 42 46 55 V
(Note 3) VGS = 0 V, ID = 10 mA, TJ = 150°C 40 45 55
(Note 5)
Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 25°C IDSS 0.25 4.0 mA
VGS = 0 V, VDS = 32 V, TJ = 150°C 1.1 20
(Note 5)
Gate Input Current VDS = 0 V, VGS = 5.0 V IGSSF 50 100 mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS = VDS, ID = 150 mA VGS(th) 1.3 1.8 2.2 V
Gate Threshold Temperature Coefficient VGS(th)/TJ 4.0 6.0 −mV/°C
Static Drain−to−Source On−Resistance VGS = 10 V, ID = 1.7 A, TJ = 25°C RDS(on) 165 200 mW
VGS = 10 V, ID = 1.7 A, TJ = 150°C 305 400
(Note 5)
VGS = 5.0 V, ID = 1.7 A, TJ = 25°C 195 230
VGS = 5.0 V, ID = 1.7 A, TJ = 150°C 360 460
(Note 5)
VGS = 5.0 V, ID = 0.5 A, TJ = 25°C 190 230
VGS = 5.0 V, ID = 0.5 A, TJ = 150°C 350 460
(Note 5)
Source−Drain Forward On Voltage VGS = 0 V, IS = 7.0 A VSD 1.0 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Time (10% VIN to 90% ID) ton 25 30 ms
Turn−Off Time (90% VIN to 10% ID) toff 120 200 ms
Turn−On Rise Time (10% ID to 90% ID) VGS = 10 V, VDD = 12 V, trise 20 25 ms
Turn−Off Fall Time (90% ID to 10% ID) ID = 2.5 A, RL = 4.7 W tfall 50 70 ms
Slew−Rate ON (70% VDS to 50% VDD) −dVDS/dtON 0.8 1.2 V/ms
Slew−Rate OFF (50% VDS to 70% VDD) dVDS/dtOFF 0.3 0.5
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25°C ILIM 3.7 4.3 5.0 A
VDS = 10 V, VGS = 5.0 V, TJ = 150°C 2.3 3.0 3.7
(Note 5)
VDS = 10 V, VGS = 10 V, TJ = 25°C 4.2 4.8 5.4
VDS = 10 V, VGS = 10 V, TJ = 150°C 2.7 3.6 4.5
(Note 5)
Temperature Limit (Turn−off) VGS = 5.0 V (Note 5) TLIM(off) 150 175 200 °C
Thermal Hysteresis VGS = 5.0 V DTLIM(on) 15
Temperature Limit (Turn−off) VGS = 10 V (Note 5) TLIM(off) 150 165 185
Thermal Hysteresis VGS = 10 V DTLIM(on) 15
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current VGS = 5 V ID = 1.0 A IGON 50 mA
VGS = 10 V ID = 1.0 A 400
Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL 0.05 mA
VGS = 10 V, VDS = 10 V 0.4
Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V IGTL 0.15 mA
VGS = 10 V, VDS = 10 V 0.7
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability Human Body Model (HBM) ESD 4000 V
Machine Model (MM) 400
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.

www.onsemi.com
3
 NCV8402D, NCV8402AD

TYPICAL PERFORMANCE CURVES

10 1000

Emax (mJ)
IL(max) (A)

100 TJstart = 25°C

TJstart = 25°C

TJstart = 150°C
TJstart = 150°C

1 10
10 100 10 100
L (mH) L (mH)
Figure 2. Single Pulse Maximum Switch−off Figure 3. Single Pulse Maximum Switching
Current vs. Load Inductance Energy vs. Load Inductance

10 1000

TJstart = 25°C
TJstart = 25°C
Emax (mJ)
IL(max) (A)

1 TJstart = 150°C 100

TJstart = 150°C

0.1 10
1 10 1 10
TIME IN CLAMP (ms) TIME IN CLAMP (ms)
Figure 4. Single Pulse Maximum Inductive Figure 5. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp Switching Energy vs. Time in Clamp

8 8
TA = 25°C 8V 10 V VDS = 10 V −40°C
7 7
6V
6 6 25°C
5V 4V
5 5
100°C
ID (A)

ID (A)

4 3.5 V 4

3 3
150°C
2 3V
2

1 VGS = 2.5 V 1

0 0
0 1 2 3 4 5 1 2 3 4 5
VDS (V) VGS (V)
Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics

www.onsemi.com
4
 NCV8402D, NCV8402AD

TYPICAL PERFORMANCE CURVES

400 350
150°C, ID = 0.5 A 150°C, VGS = 5 V
300
300 150°C, ID = 1.7 A
150°C, VGS = 10 V
250
RDS(on) (mW)

RDS(on) (mW)
100°C, ID = 1.7 A 100°C, VGS = 5 V
100°C, ID = 0.5 A 100°C, VGS = 10 V
200 200
25°C, ID = 1.7 A 25°C, ID = 0.5 A 25°C, VGS = 5 V
150 25°C, VGS = 10 V
100
−40°C, ID = 0.5 A 100 −40°C, VGS = 5 V
−40°C, ID = 1.7 A
−40°C, VGS = 10 V
0 50
4 5 6 7 8 9 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VGS (V) ID (A)
Figure 8. RDS(on) vs. Gate−Source Voltage Figure 9. RDS(on) vs. Drain Current

2 8
ID = 1.7 A
−40°C
1.75 7
RDS(on) (NORMALIZED)

1.5 VGS = 5 V 6 25°C

ILIM (A)

1.25 5
100°C
1 4
VGS = 10 V 150°C

0.75 3
VDS = 10 V
0.5 2
−40 −20 0 20 40 60 80 100 120 140 5 6 7 8 9 10
T (°C) VGS (V)
Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate−Source
Voltage

8 10
VGS = 0 V
7 150°C
1
VGS = 10 V
6
0.1
IDSS (mA)
ILIM (A)

5 100°C
0.01
4
VGS = 5 V 25°C
0.001 −40°C
3
VDS = 10 V
2 0.0001
−40 −20 0 20 40 60 80 100 120 140 10 15 20 25 30 35 40
TJ (°C) VDS (V)
Figure 12. Current Limit vs. Junction Figure 13. Drain−to−Source Leakage Current
Temperature

www.onsemi.com
5
 NCV8402D, NCV8402AD

TYPICAL PERFORMANCE CURVES

1.2 1.1
ID = 150 mA
1.1 VGS = VDS 1
−40°C
NORMALIZED VGS(th) (V)

1 0.9 25°C

VSD (V)
0.9 0.8 100°C

0.8 0.7
150°C
0.7 0.6
VGS = 0 V
0.6 0.5
−40 −20 0 20 40 60 80 100 120 140 1 2 3 4 5 6 7 8 9 10
T (°C) IS (A)
Figure 14. Normalized Threshold Voltage vs. Figure 15. Source−Drain Diode Forward
Temperature Characteristics

200 1
ID = 2.5 A DRAIN−SOURCE VOLTAGE SLOPE (V/ms) ID = 2.5 A
VDD = 12 V VDD = 12 V
RG = 0 W 0.8 RG = 0 W
150

0.6 −dVDS/dt(on)
TIME (ms)

100
0.4
dVDS/dt(off)
td(off)
tf
50
0.2
tr
td(on)
0 0
3 4 5 6 7 8 9 10 3 4 5 6 7 8 9 10
VGS (V) VGS (V)
Figure 16. Resistive Load Switching Time vs. Figure 17. Resistive Load Switching
Gate−Source Voltage Drain−Source Voltage Slope vs. Gate−Source
Voltage

100 1
ID = 2.5 A
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)

VDD = 12 V
−dVDS/dt(on), VGS = 10 V
td(off), (VGS = 10 V) 0.8
75
tr, (VGS = 5 V)
0.6
TIME (ms)

50 tf, (VGS = 10 V) tf, (VGS = 5 V)

0.4
td(off), (VGS = 5 V) dVDS/dt(off), VGS = 5 V dVDS/dt(off), VGS = 10 V
25 tr, (VGS = 10 V)
0.2 −dVDS/dt(on), VGS = 5 V
ID = 2.5 A
td(on), (VGS = 5 V)
VDD = 12 V
0 td(on), (VGS = 10 V) 0
0 400 800 1200 1600 2000 0 500 1000 1500 2000
RG (W) RG (W)
Figure 18. Resistive Load Switching Time vs. Figure 19. Drain−Source Voltage Slope during
Gate Resistance Turn On and Turn Off vs. Gate Resistance

www.onsemi.com
6
 NCV8402D, NCV8402AD

TYPICAL PERFORMANCE CURVES

1000

Duty Cycle = 50%

100

20%
10 10%
R(t) (°C/W)

5%
2%
1 1%

0.1

Single Pulse
0.01
0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH (sec)
Figure 20. Transient Thermal Resistance

www.onsemi.com
7
 NCV8402D, NCV8402AD

TEST CIRCUITS AND WAVEFORMS

RL

VIN

D +
RG VDD
G DUT −

IDS

Figure 21. Resistive Load Switching Test Circuit

90%

10%
VIN
td(ON) tr
td(OFF)

tf
90%

10%
IDS

Figure 22. Resistive Load Switching Waveforms

www.onsemi.com
8
 NCV8402D, NCV8402AD

TEST CIRCUITS AND WAVEFORMS

VDS

VIN

D +
RG VDD
G DUT −
S
tp

IDS

Figure 23. Inductive Load Switching Test Circuit

5V

VIN 0V

Tav
Tp

V(BR)DSS

Ipk

VDD
VDS

VDS(on)

IDS
0

Figure 24. Inductive Load Switching Waveforms

www.onsemi.com
9
 NCV8402D, NCV8402AD

PACKAGE DIMENSIONS

SOIC−8
CASE 751−07
NOTES:
ISSUE AK 1. DIMENSIONING AND TOLERANCING PER
−X− ANSI Y14.5M, 1982.
A 2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
8 5 PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
B S 0.25 (0.010) M Y M PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
1 IN EXCESS OF THE D DIMENSION AT
4 MAXIMUM MATERIAL CONDITION.
−Y− K 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS INCHES
G
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
C N X 45 _ B 3.80 4.00 0.150 0.157
SEATING C 1.35 1.75 0.053 0.069
PLANE D 0.33 0.51 0.013 0.020
−Z− G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
0.10 (0.004) J 0.19 0.25 0.007 0.010
H M J K 0.40 1.27 0.016 0.050
D
M 0_ 8_ 0 _ 8 _
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
0.25 (0.010) M Z Y S X S

STYLE 11:
SOLDERING FOOTPRINT* PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
1.52 6. DRAIN 2
7. DRAIN 1
0.060
8. DRAIN 1

7.0 4.0
0.275 0.155

0.6 1.270
0.024 0.050

SCALE 6:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative

◊ www.onsemi.com NCV8402D/D
10