2N3819

N-Channel JFET

Product Summary
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)

–8 –25 2 2

Features Benefits Applications

Excellent High-Frequency Gain:
Wideband High Gain
High-Frequency Amplifier/Mixer
Gps 11 dB @ 400 MHz
Very High System Sensitivity
Oscillator

Very Low Noise: 3 dB @ 400 MHz
High Quality of Amplification
Sample-and-Hold

Very Low Distortion
High-Speed Switching Capability
Very Low Capacitance Switches

High ac/dc Switch Off-Isolation
High Low-Level Signal Amplification

High Gain: AV = 60 @ 100
A

Description
The 2N3819 is a low-cost, all-purpose JFET which offers good Its TO-226AA (TO-92) package is compatible with various
performance at mid-to-high frequencies. It features low noise tape-and-reel options for automated assembly (see Packaging
and leakage and guarantees high gain at 100 MHz. Information). For similar products in TO-206AF (TO-72) and
TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.

TO-226AA
(TO-92)

S 1

G 2

D 3

Top View

Absolute Maximum Ratings

Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . 300C
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150C

Notes
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . –55 to 150C a. Derate 2.8 mW/C above 25C

Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70238.

Siliconix 1
S-52424—Rev. C, 14-Apr-97
 2N3819
Specificationsa
Limits
Parameter Symbol Test Conditions Min Typb Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –25 –35
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 2 nA –3 –8
Saturation Drain Currentc IDSS VDS = 15 V, VGS = 0 V 2 10 20 mA
VGS = –15 V, VDS = 0 V –0.002 –2 nA
Gate Reverse Current IGSS
TA = 100
C –0.002 –2 mA
Gate Operating Currentd IG VDG = 10 V, ID = 1 mA –20
pA
Drain Cutoff Current ID(off) VDS = 10 V, VGS = –8 V 2
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 150 W
Gate-Source Voltage VGS VDS = 15 V, ID = 200 mA –0.5 –2.5 –7.5
V
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7
Dynamic
f = 1 kHz 2 5.5 6.5
Common-Source Forward Transconductance d gfs VDS = 15 V mS
VGS = 0 V f = 100 MHz 1.6 5.5
Common-Source Output Conductanced gos f = 1 kHz 25 50 mS
Common-Source Input Capacitance Ciss 2.2 8
VDS = 15 V,
V VGS = 0 V
V, f = 1 MHz pF
Common-Source Reverse Transfer Capacitance Crss 0.7 4
nV⁄
Equivalent Input Noise Voltaged en VDS = 10 V, VGS = 0 V, f = 100 Hz 6
√Hz

Notes
a. TA = 25
C unless otherwise noted. NH
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW
300 ms, duty cycle
2%.
d. This parameter not registered with JEDEC.

Typical Characteristics
Drain Current and Transconductance On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage
20 10 500 100
rDS(on) – Drain-Source On-Resistance ( W )

rDS @ ID = 1 mA, VGS = 0 V

g fs – Forward Transconductance (mS)
I DSS – Saturation Drain Current (mA)

gos @ VDS = 10 V, VGS = 0 V

IDSS f = 1 kHz
8 80
g
 – Output Conductance ( mS)

16 400

12 gfs 6 300 rDS 60

gos

8 4 200 40

4 IDSS @ VDS = 15 V, VGS = 0 V 2 100 20

gfs @ VDS = 15 V, VGS = 0 V
f = 1 kHz
0 0 0 0
0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8 –10
VGS(off) – Gate-Source Cutoff Voltage (V) VGS(off) – Gate-Source Cutoff Voltage (V)

2 Siliconix
S-52424—Rev. C, 14-Apr-97
 2N3819
Typical Characteristics (Cont’d)
Common-Source Forward Transconductance
Gate Leakage Current vs. Drain Current
100 nA 10
5 mA
VGS(off) = –3 V VDS = 10 V

g fs – Forward Transconductance (mS)

1 mA f = 1 kHz
10 nA 8
0.1 mA
I G – Gate Leakage

1 nA TA = 125
C TA = –55
C
6
IGSS @ 25
C
100 pA
125
C
5 mA 4
10 pA 1 mA
125
C
0.1 mA
TA = 25
C 2
1 pA IGSS @ 25
C

0.1 pA 0
0 10 20 0.1 1 10
VDG – Drain-Gate Voltage (V) ID – Drain Current (mA)

Output Characteristics Output Characteristics

10 15
VGS(off) = –2 V VGS(off) = –3 V

8 12
I D – Drain Current (mA)

I D – Drain Current (mA)

VGS = 0 V VGS = 0 V

6 –0.2 V 9 –0.3 V

–0.4 V –0.6 V
4 6 –0.9 V
–0.6 V
–1.2 V
–0.8 V
–1.0 V –1.5 V
2 3
–1.2 V
–1.8 V
0 –1.4 V 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)

Transfer Characteristics Transfer Characteristics

10 10
VGS(off) = –2 V VDS = 10 V VGS(off) = –3 V VDS = 10 V

8 8
TA = –55
C
I D – Drain Current (mA)

I D – Drain Current (mA)

TA = –55
C
25
C
6 25
C 6
125
C

4 125
C 4

2 2

0 0
0 –0.4 –0.8 –1.2 –1.6 –2 0 –0.6 –1.2 –1.8 –2.4 –3
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

Siliconix 3
S-52424—Rev. C, 14-Apr-97
2N3819
Typical Characteristics (Cont’d)
Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltgage
10 10
VGS(off) = –2 V VDS = 10 V VGS(off) = –3 V VDS = 10 V
g fs – Forward Transconductance (mS)

f = 1 kHz f = 1 kHz

g fs – Forward Transconductance (mS)

8 8

TA = –55
C TA = –55
C
6 6
25
C 25
C

4 4
125
C 125
C

2 2

0 0
0 –0.4 –0.8 –1.2 –1.6 –2 0 –0.6 –1.2 –1.8 –2.4 –3
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
300 100
rDS(on) – Drain-Source On-Resistance ( W )

TA = –55
C g fs R L
AV + 1 ) R g
L os
240 80
Assume VDD = 15 V, VDS = 5 V
10 V
A V – Voltage Gain

VGS(off) = –2 V
RL + I
D
180 60

–3 V VGS(off) = –2 V
120 40

60 20
–3 V
0 0
0.1 1 10 0.1 1 10
ID – Drain Current (mA) ID – Drain Current (mA)

Common-Source Input Capacitance Common-Source Reverse Feedback

vs. Gate-Source Voltage Capacitance vs. Gate-Source Voltage
5 3.0
C rss – Reverse Feedback Capacitance (pF)

f = 1 MHz f = 1 MHz

4 2.4
C iss – Input Capacitance (pF)

3 VDS = 0 V 1.8

VDS = 0 V
2 1.2

VDS = 10 V VDS = 10 V
1 0.6

0 0
0 –4 –8 –12 –16 –20 0 –4 –8 –12 –16 –20

VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

4 Siliconix
S-52424—Rev. C, 14-Apr-97
 2N3819
Typical Characteristics (Cont’d)
Input Admittance Forward Admittance
100 100
TA = 25
C TA = 25
C
VDS = 15 V VDS = 15 V
VGS = 0 V VGS = 0 V
Common Source bis Common Source

10 10
gis gfs
(mS)

(mS)
–bis

1 1

0.1 0.1
100 200 500 1000 100 200 500 1000
f – Frequency (MHz) f – Frequency (MHz)

Reverse Admittance Output Admittance

10 10
TA = 25
C TA = 25
C
VDS = 15 V VDS = 15 V
bos
VGS = 0 V –brs VGS = 0 V
Common Source Common Source

1 1

gos
(mS)

(mS)

–grs
0.1 0.1

0.01 0.01
100 200 500 1000 100 200 500 1000

f – Frequency (MHz) f – Frequency (MHz)

Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
20 20
VGS(off) = –3 V VDS = 10 V VGS(off) = –3 V VDS = 10 V
f = 1 kHz
(nV / √ Hz)

g
 – Output Conductance (
S)

16 16

TA = –55
C
12 12
e n – Noise Voltage

25
C
8 8
125
C
ID = 5 mA
4 4
ID = IDSS

0 0
10 100 1k 10 k 100 k 0.1 1 10

f – Frequency (Hz) ID – Drain Current (mA)

Siliconix 5
S-52424—Rev. C, 14-Apr-97