IKW40T120

^ TrenchStop Series

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode
C
• Best in class TO247
• Short circuit withstand time – 10µs
• Designed for : G
E
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
P-TO-247-3-1
- high ruggedness, temperature stable behavior (TO-247AC)
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat),Tj=25°C Tj,max Package Ordering Code

IKW40T120 1200V 40A 1.8V 150°C TO-247AC Q67040-S4520
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current IC A
TC = 25°C 75
TC = 100°C 40
Pulsed collector current, tp limited by Tjmax ICpul s 105
Turn off safe operating area - 105
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current IF
TC = 25°C 80
TC = 100°C 40
Diode pulsed current, tp limited by Tjmax IFpul s 105
Gate-emitter voltage VGE ±20 V
1)
Short circuit withstand time tSC 10 µs
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation Ptot 270 W
TC = 25°C
Operating junction temperature Tj -40...+150 °C
Storage temperature Tstg -55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 1 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.45 K/W
junction – case
Diode thermal resistance, RthJCD 0.81
junction – case
Thermal resistance, RthJA TO-247AC 40
junction – ambient

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 1 .5m A 1200 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 40 A
T j =2 5 °C - 1.8 2.3
T j =1 2 5° C - 2.1 -
T j =1 5 0° C - 2.3 -
Diode forward voltage VF V G E = 0V , I F = 4 0 A
T j =2 5 °C - 1.75 2.3
T j =1 2 5° C - 1.75 -
T j =1 5 0° C - 1.75 -
Gate-emitter threshold voltage VGE(th) I C = 1. 5m A, V C E = V G E 5.0 5.8 6.5
Zero gate voltage collector current ICES V C E = 12 0 0V , mA
V G E = 0V
T j =2 5 °C - - 0.4
T j =1 5 0° C - - 4.0
Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 600 nA
Transconductance gfs V C E = 20 V , I C = 40 A - 21 - S
Integrated gate resistor RGint 6 Ω

Power Semiconductors 2 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 2500 - pF
Output capacitance Coss V G E = 0V , - 130 -
Reverse transfer capacitance Crss f= 1 MH z - 110 -
Gate charge QGate V C C = 96 0 V, I C =4 0 A - 203 - nC
V G E = 15 V
Internal emitter inductance LE T O - 24 7A C - - 13 nH
measured 5mm (0.197 in.) from case
1)
Short circuit collector current IC(SC) V G E = 15 V ,t S C ≤ 10 µs - 210 - A
V C C = 6 0 0 V,
T j = 25 ° C

Switching Characteristic, Inductive Load, at Tj=25 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =2 5 °C , - 48 - ns
Rise time tr V C C = 60 0 V, I C = 4 0 A, - 34 -
V G E = 0/ 15 V ,
Turn-off delay time td(off) R G = 15 Ω, - 480 -
2)
Fall time tf L σ =1 8 0n H, - 70 -
2)
Turn-on energy Eon C σ = 3 9p F - 3.3 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 3.2 -
Total switching energy Ets reverse recovery. - 6.5 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =2 5 °C , - 240 - ns
Diode reverse recovery charge Qrr V R = 6 00 V , I F = 4 0 A, - 3.8 µC
Diode peak reverse recovery current Irrm d i F / d t =8 0 0 A/ µs - 28 A
Diode peak rate of fall of reverse d i r r /d t - 370 - A/µs
recovery current during t b

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance L σ an d Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors 3 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

Switching Characteristic, Inductive Load, at Tj=150 °C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =1 5 0° C - 52 - ns
Rise time tr V C C = 60 0 V, I C = 4 0 A, - 40 -
V G E = 0/ 15 V ,
Turn-off delay time td(off) R G = 1 5Ω , - 580 -
1)
Fall time tf L σ =1 8 0n H, - 120 -
1)
Turn-on energy Eon C σ = 3 9p F - 5.0 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 5.4 -
Total switching energy Ets reverse recovery. - 10.4 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =1 5 0° C - 410 - ns
Diode reverse recovery charge Qrr V R = 6 00 V , I F = 4 0 A, - 8.8 - µC
Diode peak reverse recovery current Irrm d i F / d t =8 0 0 A/ µs - 36 - A
Diode peak rate of fall of reverse d i r r /d t - 330 A/µs
recovery current during t b

1)
Leakage inductance L σ an d Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors 4 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

100A
100A tp=3µs

TC=80°C
10µs
80A TC=110°C
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

10A
50µs
60A

150µs
40A
Ic 1A 500µs

20A 20ms
Ic
DC
0A 0,1A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C,
(Tj ≤ 150°C, D = 0.5, VCE = 600V, Tj ≤150°C;VGE=15V)
VGE = 0/+15V, RG = 15Ω)

70A

250W 60A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION

200W 50A

40A
150W

30A
100W
20A

50W 10A

0W 0A
25°C 50°C 75°C 100°C 125°C 25°C 75°C 125°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of Figure 4. Collector current as a function of
case temperature case temperature
(Tj ≤ 150°C) (VGE ≥ 15V, Tj ≤ 150°C)

Power Semiconductors 5 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

100A 100A

90A 90A

80A VGE=17V 80A VGE=17V

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

70A 15V 70A 15V

60A 13V 60A 13V

11V 11V
50A 50A
9V 9V
40A 40A
7V 7V
30A 30A

20A 20A

10A 10A

0A 0A
0V 1V 2V 3V 4V 5V 6V 0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 150°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

100A

90A 3,5V
IC=80A
80A 3,0V
IC, COLLECTOR CURRENT

70A
2,5V
60A
2,0V IC=40A
50A

40A 1,5V IC=25A

30A
1,0V IC=10A
20A
TJ=150°C
0,5V
10A 25°C

0A 0,0V
0V 2V 4V 6V 8V 10V 12V -50°C 0°C 50°C 100°C
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=20V) saturation voltage as a function of
junction temperature
(VGE = 15V)

Power Semiconductors 6 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

td(off)
1000 ns

td(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns tf
tf
100 ns
td(on)
td(on)

tr
10ns tr
10 ns

1ns 1 ns
0A 20A 40A 60A 5Ω 15Ω 25Ω 35Ω 45Ω
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=150°C, (inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=15Ω, VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

td(off)
7V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

6V
t, SWITCHING TIMES

5V max.

100ns typ.
4V
tf
min.
3V
td(on)

tr 2V

1V

10ns 0V
0°C 50°C 100°C 150°C -50°C 0°C 50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE=600V, (IC = 1.5mA)
VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E)

Power Semiconductors 7 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

*) Eon and Etsinclude losses *) Eon and Ets include losses

due to diode recovery due to diode recovery
15 mJ Ets*
25,0mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

Ets*
20,0mJ

10 mJ
15,0mJ Eon*

Eon* Eoff
10,0mJ
Eoff 5 mJ

5,0mJ

0,0mJ 0 mJ
10A 20A 30A 40A 50A 60A 70A 5Ω 15Ω 25Ω 35Ω
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ=150°C, (inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=15Ω, VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) E on and E ts include losses *) Eon and Ets include losses

due to diode recovery due to diode recovery
15mJ 15mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

E ts *

10mJ 10mJ

Ets*
E off

5mJ 5mJ E
E on* off

Eon*

0mJ 0mJ
50°C 100°C 150°C 400V 500V 600V 700V 800V
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE=600V, (inductive load, TJ=150°C,
VGE=0/15V, IC=40A, RG=15Ω, VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

Power Semiconductors 8 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

Ciss
VGE, GATE-EMITTER VOLTAGE

15V 1nF

c, CAPACITANCE
240V 960V
10V
Coss
100pF
Crss

5V

0V 10pF
0nC 50nC 100nC 150nC 200nC 250nC 0V 10V 20V
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=40 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT

15µs 300A
tSC, SHORT CIRCUIT WITHSTAND TIME

10µs 200A

5µs 100A

0µs 0A
12V 14V 16V 12V 14V 16V 18V
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector
function of gate-emitter voltage current as a function of gate-
(VCE=600V, start at TJ=25°C) emitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)

Power Semiconductors 9 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series
VCE, COLLECTOR-EMITTER VOLTAGE

VCE
600V 60A 60A 600V

IC, COLLECTOR CURRENT

IC
400V 40A 40A 400V

200V 20A 20A 200V

IC VCE
0V 0A 0A 0V
0us 0.5us 1us 1.5us 0us 0.5us 1us 1.5us
t, TIME t, TIME
Figure 21. Typical turn on behavior Figure 22. Typical turn off behavior
(VGE=0/15V, RG=15Ω, Tj = 150°C, (VGE=15/0V, RG=15Ω, Tj = 150°C,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE

D=0.5
0.2

0.2 0.1
-1
10 K/W
-1
10 K/W R,(K/W) τ, (s)=
0.1 0.228 1.01*10-1
0.05
0.257 1.15*10-2
R,(K/W) τ, (s)= 0.02
0.05 0.238 1.30*10-3
0.159 1.10*10-1 0.01 0.087 1.53*10-4
0.133 1.56*10-2
0.02 single pulse
0.120 1.35*10-3
-2 0.01 0.038 1.51*10-4 -2
R1 R2
10 K/W 10 K/W
single pulse
R1 R2
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2

C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
-3 -3
10 K/W 10 K/W
10µs 100µs 1ms 10ms 100ms 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance Figure 24. Diode transient thermal
(D = tp / T) impedance as a function of pulse
width
(D=tP/T)

Power Semiconductors 10 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

600ns
8µC TJ=150°C

Qrr, REVERSE RECOVERY CHARGE

trr, REVERSE RECOVERY TIME

500ns
6µC

400ns

300ns 4µC
TJ=150°C TJ=25°C
200ns
2µC
TJ=25°C
100ns

0ns 0µC
400A/µs 600A/µs 800A/µs 1000A/µs 400A/µs 600A/µs 800A/µs 1000A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as Figure 24. Typical reverse recovery charge
a function of diode current slope as a function of diode current
(VR=600V, IF=40A, slope
Dynamic test circuit in Figure E) (VR=600V, IF=40A,
Dynamic test circuit in Figure E)

TJ=25°C
40A -400A/µs
TJ=150°C
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT

dirr/dt, DIODE PEAK RATE OF FALL

35A
TJ=150°C
30A -300A/µs
TJ=25°C
25A

20A -200A/µs

15A

10A -100A/µs

5A

0A -0A/µs
400A/µs 600A/µs 800A/µs 1000A/µs 400A/µs 600A/µs 800A/µs 1000A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current Figure 26. Typical diode peak rate of fall of
as a function of diode current reverse recovery current as a
slope function of diode current slope
(VR=600V, IF=40A, (VR=600V, IF=40A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

Power Semiconductors 11 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

100A
TJ=25°C

150°C 2,0V IF=80A

80A

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

40A
1,5V
60A 25A
10A

40A 1,0V

20A 0,5V

0A 0,0V
0V 1V 2V -50°C 0°C 50°C 100°C
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as Figure 28. Typical diode forward voltage as a
a function of forward voltage function of junction temperature

Power Semiconductors 12 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

TO-247AC dimensions
symbol [mm] [inch]
min max min max
A 4.78 5.28 0.1882 0.2079
B 2.29 2.51 0.0902 0.0988
C 1.78 2.29 0.0701 0.0902
D 1.09 1.32 0.0429 0.0520
E 1.73 2.06 0.0681 0.0811
F 2.67 3.18 0.1051 0.1252
G 0.76 max 0.0299 max
H 20.80 21.16 0.8189 0.8331
K 15.65 16.15 0.6161 0.6358
L 5.21 5.72 0.2051 0.2252
M 19.81 20.68 0.7799 0.8142
N 3.560 4.930 0.1402 0.1941
∅P 3.61 0.1421
Q 6.12 6.22 0.2409 0.2449

Power Semiconductors 13 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS 10% Ir r m t
QF
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

τ1 τ2 τn
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Leakage inductance Lσ =180nH
an d Stray capacity C σ =39pF.

Power Semiconductors 14 Preliminary / Rev. 1 Jul-02

 IKW40T120
^ TrenchStop Series

Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2001
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Power Semiconductors 15 Preliminary / Rev. 1 Jul-02