MOTOROLA m@ SEMICONDUCTOR SEE TECHNICAL DATA 2N4957 2N4958 2N4959 The RF Line PNP SILICON HIGH FREQUENCY TRANSISTORS designed for high-gain, lowsncise ampli, oscillator and mixer applications, 1 Low Noise Figure 7 450 MHe — NF = 3.0 dB (Max) — 2Né957 3.3 dB (Max) — 2N4968 3.8 dB (Maxi — 2N4959, © High Power Gain « 450 MHz — Gye = 17 48 (Min) — 24957 16 48 (Min) — 2Na956 15 08 (Min} — 24958 «© High Current-Gain — Bandwidth Product ~ f= 1.2 GHe (Min) ce Ip ~ 2.0 mde — 2N6967 = V0 GHe Min) ig = 2.0 made — 2N958, 26959 Ig = -30mA HIGH FREQUENCY ‘TRANSISTORS. PNP SILICON | *MaxIMUM RATINGS _ Rating “Symbot | Value [eee |e a “Total Power Dissipation i Ta ~ 25°C Po 200 7 mW a ‘to +200! c “indwcntes JEDEC Regstered Dats Seeeeeeee eee eeeeeeeeEaEEE case 20.02 TO-206AF (70-72) MOTOROLA RF DEVICE DATA 2272N4957, 2N4958, 2N4959 *ELECTRICAL CHARACTERISTICS (Ta «25°C unless otherwise noted) (______ehanerwine ~T Smbot [Min [tw] Me [at] Cater Emir Bescon Voope ———Twreniceo | = | = = wae res __ | “ | Catecor due rekdown Ytage Voericeo | 90 | 2 we Beek Volage ~~ ~SCS*S*~S*S*S~S~*d Wms YY | ies Treo ntoecie = | _ Cavtctor Cutt Current | ‘co | | wade ‘Noa "ove = 0 | a | [WS 2 Steve ola s50e1 ft] Sf ey [lic = -20 made. Veg = 10 Vac) } DYNAMIC CuAnAcTEnSTICS el Coren.Guin — Bandi Product =I T ime] Te Po made Vee” 0 Vée,t 00 Nie) 204857 ao | se00 | as00 Colecor Base Capacitance (Weg = 10 dele 0.1 _ 1.0.He) ‘mall Signe! Curent Gein Uc = "20 mAde, Vee ~ ~10 Vee. Collector Base Tome Constant le "Wows Figure lie 20 mAde, Vee Y0Vde 4 ‘Common-Eminter Amol Wer 10 dete ‘50 Mie) 2Na067 2naose 2ne369 [ih tne el MOTOROLA RF DEVICE DATA 2282N4957, 2N4958, 2N4959 FIGURE 1 — NOISE FIGURE ANO POWER GAIN FIGURE 2 — UNILATERALIZED POWER GAIN LE Test eRcUrT veraus FREQUENCY FIGURE 4 — NOISE FIGURE ANO POWER GAIN ‘voun COLLECTOR CUMMENT ® : : 3 g E an * ci ncn mt FRGURE 5 — CONTOURS OF NOISE RGURE werwss [RGURE 6 — CONTOURS OF NOISE FIGURE verns ounce REBISTANCE AND COLLECTOR CURRENT ounce nESISTANCE ANO COLLECTOR CURRENT ome ny sovet ssi a MOTOROLA RF DEVICE DATA 2292N4957, 2N4958, 2N4959 COMMON EMITTER CIRCUIT DESIGN DATA Vcg = -10Vde te = -20 mA FIGURE 8 — LINVILL STABILITY FACTOR FIGURE 7 - TRANSOUCER GAIN ss FREQUENCY Hitt i 1 TET JURE 10 - LOAD ADMITTANCE. FIGURE 9 LOAD ADMITTANCE FG FREQUENCY (IMAGINARY! Figuae 12 SOURCE AoWiTraNCE ‘verws FREQUENCY (REALL ‘yraus FREQUENCY (IMAGINARY! ; = TY MOTOROLA AF DEVICE OATA 2002N4957, 2N4958, 2N4959 COMMON BASE CIRCUIT DESIGN DATA, Voe = ~10 Vde lg = -20mA FIGURE 13 - TRANSOUCER GAIN FIGURE 14 - LINVILL STaaiLiTY FACTOR aut FREQUENCY (REAL! ‘terms FREQUENCY (IMAGINARY) TI TT TT | sare Phil a a nT ‘.FRequtNer wa men ESE ETT OUR a ARTES TUT t= | | a= TTS [ ts mac MOTOROLA RF DEVICE DATA 2a2N4957, 2N4958, 2N4959 FIGURE 19 — SMALL.SIGNAL CURRENT GAIN FIGURE 20 — POLAR hye ‘vernus FREQUENCY 3 SEAN 3 3st Ei 3 ol tt ‘ol 2 x { ie Zo | fs | 8 “4 Y i LI ie z ? Coa 4 T 1 | i Niet She we wm ee ‘mci ne IRGURE 21 — fr vo COLLECTOR CURRENT conser eam 24 run H 4 8 3a THA ES Be gu i TETHE Es SEH Eu 5 1] de 3 aa yt } eal} | 4 | vee tove pes ay a | ! ae wk 1 eh il gs RE age age ga aoa nn seo came ns \ceousron come nk ngune 23 ~ caPACTANGE /PoUnE 24 —cOLLECTOn caRACTENSTICS 3 WERTICAL SCALE y eat 5 5 oti 14 wo? ase 8 WORZONA SCRE Yop 10D MOTOROLA RF DEVICE DATA 2322N4957, 2N4958, 2N4959 Y PARAMETERS versus CURRENT i= a0 tHe) ‘COMMON BASE ‘COMMON EMITTER Veg = ~10 Vde Veg = ~18 Vie —-— Voe = -10Vde —— Veg = 18 Vee ——— FIGURE 25 — INPUT ADMUTTANCE FIGURE 28 - INPUT ADMITTANCE. a MOTOROLA RF DEVICE DATA 2832N4957, 2N4958, 2N4959 ‘COMMON BASE y PARAMETER VARIATIONS (ep 10Vde,I¢ ~ 2.0 made) Y PARAMETERS versus FREQUENCY POLAR y PARAMETERS verms FREQUENCY FIGURE 34 ~ yp INPUT ADMITTANCE FIGURE 33 — yy INPUT ADMITTANCE at oe sah ISFER ADMITTANCE TLirg pram MOTOROLA AF DEVICE DATA 2342N4957, 2N4958, 2N4959 COMMON EMITTER y PARAMETER VARIATIONS. WWoE =~ 10 de, ¢ 20 made) y PARAMETERS verms FREQUENCY POLAR y PARAMETERS versus FREQUENCY FIGURE UT ADMITTANCE Ty 1 Ht faih, TTT MOTOROLA RF DEVICE DATA 2.35