Professional Documents
Culture Documents
Obsolete Product(s) - Obsolete Product(s) : Features
Obsolete Product(s) - Obsolete Product(s) : Features
Features
■ Wide-range supply voltage, up to 36 V
■ Single or split power supply
■ Short-circuit protection to ground
( s )
ct
■ Thermal shutdown
Description
d u
The TDA2030 is a monolithic integrated circuit in r o
Pentawatt (horizontal)
(DIN45500).
O b TDA2030H Pentawatt horizontal
) -
has very low harmonic and crossover distortion.
t (s
Furthermore, the device incorporates an original
c
(and patented) short-circuit protection system
d u
comprising an arrangement for automatically
r o
limiting the dissipated power so as to keep the
operating point of the output transistors within
P
their safe operating range. A conventional thermal
e
l e t
shutdown system is also included.
s o
Figure 1. Ex: Functional block diagram
O b
1 Device overview
( s )
uct
o d
Figure 3. Test circuit
P r
e te
o l
b s
- O
(s )
c t
d u
r o
e P
l e t
s o
O b
2 Electrical specifications
u ct W
Tstg, Tj Storage and junction temperature -40 to 150
o d °C
( s )
2.3 t
Electrical characteristics
c
d u
Refer to the test circuit in Figure 3; VS = ±14 V, Tamb = 25°C unless otherwise specified.
Table 4. r o
Electrical characteristics
Symbol
e P Parameter Test conditions Min. Typ. Max. Unit
e t
ol
Vs ±6 ± 18
Supply voltage V
12 36
O Ib
VOS
Input bias current
Input offset voltage
0.2
±2
2
± 20
μA
mV
Vs = ± 18 (Vs = 36)
IOS Input offset current ± 20 ± 200 nA
d = 0.5%, f = 40 to 15,000 Hz;
GV = 30 dB
RL = 4 Ω 12 14 W
Po
Output power RL = 8 Ω 8 9 W
d = 10%, f =1 kHz; GV = 30 dB
RL = 4 Ω 12 14 W
RL = 8 Ω 8 9 W
Po = 0.1 to 12 W, RL = 4 Ω,
GV = 30 dB 0.2 0.5 %
f = 40 to 15.000 Hz
d Distortion
Po = 0.1 to 8 W, RL = 8 Ω,
GV = 30 dB 0.1 0.5 %
f = 40 to 15.000 Hz
Frequency response Po = 12 W, RL = 4 Ω;
B 10 Hz to 140 Hz
(–3 dB) GV = 30 dB
Ri Input resistance (pin 1) 0.5 5 MΩ
Gv
Voltage gain (open loop) 90
( s ) dB
Gv
Voltage gain (closed loop) f = 1 kHz 29.5 30
u ct
30.5 dB
eN Input noise voltage
B = 22 Hz to 22 kHz
o d3 10 µV
Pr
iN Input noise current 80 200 pA
GV = 30 dB; RL = 4 Ω,
SVR Supply voltage rejection
t
Rg = 22 kΩ, fripple = 100 Hz;
e e 40 50 dB
Vripple = 0.5 Veff
l
so
Po = 14 W, RL = 4 Ω
Id 900
Drain current mA
Po = 9 W, RL = 8 Ω
°C
)-
145
temperature
t ( s
u c
o d
P r
e t e
o l
b s
O
2.4 Characterizations
Figure 4. Output power vs. supply voltage Figure 5. Output power vs. supply voltage
( s )
u ct
o d
P r
e te
o l
b s
Figure 6. Distortion vs. output power
(s )
c t
d u
r o
e P
l e t
s o
O b
( s )
u ct
o d
P r
Figure 10. Distortion vs. frequency
e te
Figure 11. Frequency response with different
o l
values of the rolloff capacitor C8
- O
(s )
c t
d u
r o
e P
l e t
s o
O b
Figure 12. Quiescent current vs. supply Figure 13. Supply voltage rejection vs. voltage
voltage gain
( s )
u ct
o d
P r
e te
Figure 14. Power dissipation and efficiency
o l
Figure 15. Maximum power dissipation vs.
vs. output power
b s supply voltage (sine wave
- O operation)
(s )
c t
d u
r o
e P
l e t
s o
O b
3 Applications
Figure 16. Typical amplifier with split power Figure 17. Typical amplifier with single power
supply supply
( s )
u ct
o d
P r
e te
o l
b s
-
a typical amplifier with split power O
Figure 18. PC board and component layout for Figure 19. PC board and component layout for
a typical amplifier with single power
supply
(s ) supply
c t
d u
r o
e P
l e t
s o
O b
Figure 20. Bridge amplifier configuration with split power supply (Po = 28 W, Vs = ±14 V)
( s )
u ct
o d
P r
e te
o l
b s
- O
(s )
c t
d u
r o
e P
l e t
s o
O b
4 Practical considerations
R1 22 kΩ
O
Closed loop gain setting Increase of gain Decrease in gain(1)
R2 680 Ω
)-
Closed loop gain setting
( s
Decrease of gain(1) Increase in gain
R3 22 kΩ
c t
Non-inverting input biasing
Increase of input
impedance
Decrease in input
impedance
d u Danger of oscillation at
R4
r 1Ω
o Frequency stability high frequencies with
e P inductive loads
Poor high-frequency
let
R5 3 R2 Upper frequency cutoff Danger of oscillation
attenuation
so
Increase in low-
C1 1 µF Input DC decoupling
frequency cutoff
O b C2 22 µF
Inverting input DC
decoupling
Increase in low-
frequency cutoff
C3C4 0.1 µF Supply voltage bypass Danger of oscillation
C5C6 100 µF Supply voltage bypass Danger of oscillation
C7 0.22 µF Frequency stability Danger of oscillation
1
C8 ------------------ Upper frequency cutoff Smaller bandwidth Larger bandwidth
2πBR 1
C1 1 µF Input DC decoupling u
Increase in low-
d
r ofrequency cutoff
C2 22 µF Inverting DC decoupling
e P Increase in low-
frequency cutoff
C3 0.1 µF Supply voltage bypass
l e t Danger of oscillation
C5 100 µF Supply voltage bypass
s o Danger of oscillation
C7 0.22 µF Frequency stability
O b Danger of oscillation
)-
1
C8 ------------------ Upper frequency cutoff Smaller bandwidth Larger bandwidth
2πBR 1
t ( s
D1D2 1N4001
c
To protect the device against output voltage spikes.
u
1. Closed loop gain must be higher than 24 dB
o d
P r
e t e
o l
b s
O
5 Short-circuit protection
The TDA2030 has an original circuit which limits the current of the output transistors.
Figure 21 shows that the maximum output current is a function of the collector emitter
voltage; hence the output transistors work within their safe operating area (Figure 5).
This function can therefore be considered as being peak power limiting rather than simple
current limiting.
It reduces the possibility that the device gets damaged during an accidental short-circuit
from AC output to ground.
Figure 21. Maximum output current vs. Figure 22. Safe operating area and collector
( s )
ct
voltage [VCEsat] across each output characteristics of the protected
transistor power transistor
d u
r o
e P
l e t
s o
O b
) -
c t (s
d u
r o
e P
l e t
s o
O b
6 Thermal shutdown
u ct
Figure 23. Output power and drain current vs. Figure 24. Output power and drain current vs.
case temperature (RL = 4 Ω) d
case temperature (RL = 8 Ω)
o
P r
e t e
o l
b s
- O
(s )
c t
d u
r o
e P
l e t
s o
O b
( s )
u ct
o d
P r
e te
o l
b s
- O
The following table shows the length that the heatsink in Figure 26 must have for several
values of Ptot and Rth.
(s )
Table 7.
c t
Recommended values of heatsink
u
od
Dimension Recommended values Unit
Pr
Ptot 12 8 6 W
e t e
Length of heatsink
Rth of heatsink
60
4.2
40
6.2
30
8.3
mm
°C/W
s ol
O b
( s )
ct
H2 10.40 0.41
u
H3 10.05 10.40 0.395 0.409
L
L1
14.20
5.70
15.00
6.20
0.56
0.224
0.59
0.244
o d
L2
L3
14.60
3.50
15.20
4.10
0.574
0.137
0.598
.161
P r
L4
L5 2.60
1.29
3.00 0.102
0.05
0.118
e t e
L6
L7
15.10
6.00
15.80
6.60
0.594
0.236
0.622
0.260
o l
bs
L9 2.10 2.70 0.083 0.106 Pentawatt H
L10 4.30 4.80 0.170 0.189
-O
DIA 3.65 3.85 0.143 0.151
(s)
L
c t C A
u
od
D D1
Pr
E L1
ete
L3 L2 F
G
ol
L7 G1
L4 L5
H2
b s
O F1
Dia.
H3
Resin between L9
leads L6 L10
PENTHME.EPS
0015982
8 Revision history
( s )
u ct
o d
P r
e t e
o l
b s
- O
(s )
c t
du
r o
e P
l e t
s o
O b
( s )
u ct
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
All ST products are sold pursuant to ST’s terms and conditions of sale.
P r
t e
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
e
o l
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
b s
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
- O
(s )
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
c t
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
d u
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
r o
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
P
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
e t e
o l
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
s
liability of ST.
b
O ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.