MITSUBISHI Nch POWER MOSFET

FS10SM-16A
HIGH-SPEED SWITCHING USE

FS10SM-16A OUTLINE DRAWING Dimensions in mm

15.9MAX. 4.5

1.5
r

5.0
φ 3.2

20.0
2
4
2 4.4

19.5MIN.
1.0
q w e
5.45 5.45 0.6 2.8

wr

q GATE
w DRAIN
q
e SOURCE
¡VDSS ................................................................................ 800V r DRAIN

¡rDS (ON) (MAX) .............................................................. 0.98Ω

e
¡ID ......................................................................................... 10A TO-3P

APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol Parameter Conditions Ratings Unit

VDSS Drain-source voltage VGS = 0V 800 V
VGSS Gate-source voltage VDS = 0V ±30 V
ID Drain current 10 A
IDM Drain current (Pulsed) 30 A
PD Maximum power dissipation 200 W
Tch Channel temperature –55 ~ +150 °C
Tstg Storage temperature –55 ~ +150 °C
— Weight Typical value 4.8 g

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS10SM-16A
HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 800 — — V
V (BR) GSS Gate-source breakdown voltage IGS = ±100µA, VDS = 0V ±30 — — V
IGSS Gate-source leakage current VGS = ±25V, VDS = 0V — — ±10 µA
IDSS Drain-source leakage current VDS = 800V, VGS = 0V — — 1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 V
rDS (ON) Drain-source on-state resistance ID = 5A, VGS = 10V — 0.76 0.98 Ω
VDS (ON) Drain-source on-state voltage ID = 5A, VGS = 10V — 3.80 4.90 V
yfs Forward transfer admittance ID = 5A, VDS = 10V 6.0 10.0 — S
Ciss Input capacitance — 2250 — pF
Coss Output capacitance VDS = 25V, VGS = 0V, f = 1MHz — 230 — pF
Crss Reverse transfer capacitance — 42 — pF
td (on) Turn-on delay time — 38 — ns
tr Rise time VDD = 200V, ID = 5A, VGS = 10V, — 46 — ns
td (off) Turn-off delay time RGEN = RGS = 50Ω — 260 — ns
tf Fall time — 75 — ns
VSD Source-drain voltage IS = 5A, VGS = 0V — 1.0 1.5 V
Rth (ch-c) Thermal resistance Channel to case — — 0.625 °C/W

PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA
200 102
7
5
POWER DISSIPATION PD (W)

3
DRAIN CURRENT ID (A)

160 tw = 10ms
2
101 100ms
120 7
5
3 1ms
2
80
100
7 10ms
5
40 100ms
3 TC = 25°C
2 DC
Single Pulse
0 10–1 0
0 50 100 150 200 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

(TYPICAL) (TYPICAL)
VGS = 20V VGS = 20V
20 10
PD = 200W 10V TC = 25°C 10V
Pulse Test 5V
TC = 25°C
DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

16 Pulse Test 8

12 6

5V
8 4
4.5V

4 2
4V
4V
0 0
0 4 8 12 16 20 0 2 4 6 8 10

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS10SM-16A
HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS.

GATE-SOURCE VOLTAGE DRAIN CURRENT
(TYPICAL) (TYPICAL)
50 1.0
TC = 25°C TC = 25°C
Pulse Test Pulse Test
DRAIN-SOURCE ON-STATE

DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
40 0.8 VGS = 10V
VOLTAGE VDS (ON) (V)

20V

30 0.6

20 0.4
ID = 20A

10 10A 0.2
5A

0 0
0 4 8 12 16 20 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

FORWARD TRANSFER ADMITTANCE

TRANSFER CHARACTERISTICS VS.DRAIN CURRENT
(TYPICAL) (TYPICAL)
20 101
TC = 25°C TC = 25°C
VDS = 50V
7
75°C
Pulse Test 5
125°C
DRAIN CURRENT ID (A)

16
FORWARD TRANSFER
ADMITTANCE yfs (S)

3
2
12
100
8 7
5

3
4
2
VDS = 10V
Pulse Test
0 10–1 –1
0 4 8 12 16 20 10 2 3 5 7 100 2 3 5 7 101

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
104 103
7 Tch = 25°C
5 7 VDD = 200V
3 Ciss
5 VGS = 10V
SWITCHING TIME (ns)

2 RGEN = RGS = 50Ω

Ciss, Coss, Crss (pF)

3
td(off)
CAPACITANCE

103 2
7
5
3 102 tf
2 Coss 7 tr
102 5
7 td(on)
5 3
Tch = 25°C Crss
3 2
2 f = 1MHZ
VGS = 0V
101 101 0
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 10 2 3 5 7 101 2 3 5 7 102

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A)

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS10SM-16A
HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE

VS.GATE CHARGE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
20 40
Tch = 25°C VGS = 0V
GATE-SOURCE VOLTAGE VGS (V)

ID = 10A Pulse Test

SOURCE CURRENT IS (A)

16 32

VDS = 250V
12 24

8 400V 16 TC = 125°C
600V
75°C
4 8 25°C

0 0
0 20 40 60 80 100 0 0.8 1.6 2.4 3.2 4.0

GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V)

ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS.

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)

CHANNEL TEMPERATURE CHANNEL TEMPERATURE

(TYPICAL) (TYPICAL)
101 5.0
VGS = 10V VDS = 10V
7 ID = 1/2ID ID = 1mA
GATE-SOURCE THRESHOLD

5 Pulse Test
4.0
VOLTAGE VGS (th) (V)

3
2
3.0
100
7 2.0
5

3
1.0
2

10–1 0
–50 0 50 100 150 –50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C)

BREAKDOWN VOLTAGE VS.

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)

TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)

CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE

(TYPICAL) CHARACTERISTICS
1.4 101
VGS = 0V 7
ID = 1mA 5
1.2 3
2
100 D = 1.0
1.0 7
5 0.5
3
2 0.2
0.8
10–1 0.1
7
5 0.05
0.6
3 0.02
2 0.01
Single Pulse
0.4 10–2 –4
–50 0 50 100 150 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102

CHANNEL TEMPERATURE Tch (°C) PULSE WIDTH tw (s)

Feb.1999