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IRF540ZPbF
IRF540ZSPbF
IRF540ZLPbF
Features HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance D
l 175°C Operating Temperature VDSS = 100V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 26.5mΩ
l Lead-Free G
Description ID = 36A
S
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
TO-220AB D2Pak TO-262
applications.
IRF540ZPbF IRF540ZSPbF IRF540ZLPbF
nH 6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package G
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IRF540Z/S/LPbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)
4.5V
10 10
4.5V
60µs PULSE WIDTH 60µs PULSE WIDTH
Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1
0 11 10
10 100
100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
1000 80
T J = 175°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
60
100
T J = 175°C
40
TJ = 25°C
10
T J = 25°C
20
VDS = 25V
VDS = 10V
60µs PULSE WIDTH
380µs PULSE WIDTH
1
0
4.0 5.0 6.0 7.0
0 10 20 30 40 50
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
3000 20
VGS = 0V, f = 1 MHZ ID= 22A
C iss = C gs + C gd, C ds SHORTED
VDS= 80V
2000
Ciss
12
1500
8
1000
4
500 Coss FOR TEST CIRCUIT
Crss SEE FIGURE 13
0
0
1 10 100 0 10 20 30 40 50 60
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1000.0 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.0 100
T J = 175°C
10.0 10 100µsec
1.0 1
T J = 25°C 1msec
Tc = 25°C
VGS = 0V Tj = 175°C 10msec
Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000
VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)
40 3.0
ID = 22A
2.0
(Normalized)
20
1.5
10
1.0
0 0.5
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
10
Thermal Response ( Z thJC )
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
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IRF540Z/S/LPbF
180
15V
60
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS 40
tp
20
0
25 50 75 100 125 150 175
I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG
10 V
QGS QGD 4.0
VGS(th) Gate threshold Voltage (V)
VG
3.5
ID = 250µA
Charge 3.0
2.0
L
VCC
DUT
0 1.5
1K -75 -50 -25 0 25 50 75 100 125 150 175
T J , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature
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IRF540Z/S/LPbF
1000
Duty Cycle = Single Pulse
0.1
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
80
temperature far in excess of T jmax. This is validated for
70 every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
60 not exceeded.
3. Equation below based on circuit and waveforms shown in
50
Figures 12a, 12b.
40 4. PD (ave) = Average power dissipation per single
avalanche pulse.
30 5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
20 6. Iav = Allowable avalanche current.
10 7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
Starting T J , Junction Temperature (°C)
*
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
- + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple ≤ 5% ISD
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
V DS
VGS
D.U.T.
RG
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VDS
90%
10%
VGS
td(on) tr t d(off) tf
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IRF540Z/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
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IRF540Z/S/LPbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
OR
PART NUMBE R
INT E RNAT IONAL
RE CT IFIE R F530S
LOGO DAT E CODE
P = DESIGNAT ES LE AD - FRE E
PRODUCT (OPT IONAL)
AS SEMBLY
YEAR 0 = 2000
LOT CODE
WEEK 02
A = AS SE MBLY S IT E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com
IRF540Z/S/LPbF
OR
PART NUMBER
INT ERNATIONAL
RECT IF IER
LOGO
DAT E CODE
P = DESIGNAT ES LEAD-FREE
ASSEMBLY PRODUCT (OPTIONAL)
LOT CODE YEAR 7 = 1997
WEE K 19
A = ASSEMBLY S ITE CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com 11
IRF540Z/S/LPbF
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Notes:
Repetitive rating; pulse width limited by
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig. 11). avalanche performance.
Limited by TJmax, starting TJ = 25°C, L = 0.46mH This value determined from sample failure population. 100%
RG = 25Ω, IAS = 20A, VGS =10V. Part not tested to this value in production.
recommended for use above this value. This is only applied to TO-220AB pakcage.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR-
Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering
same charging time as Coss while VDS is rising
techniques refer to application note #AN-994.
from 0 to 80% VDSS .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
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