DESCRIPTION 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. FEATURES # High power guin: Gpe 2 10.708 @Vec = 13.5V, Po = 3.5W, f= 175MHe ‘#7039 metal seeied package for high reliability, ‘© Emitter electrode is connected electrically tothe case. APPLICATION 1 1 3 watt power amplifiers in VHF band mobile rediv applica tions. MITSUBISHI RF POWER TRANSISTOR 2S8C1947 NPN EPITAXIAL PLANAR TYPE OUTLINE DRAWING © emirten casey 2 ease ® cottector Tee ABSOLUTE MAXIMUM RATINGS (70=25'C unos ones sites) Sea T aan aang Tar a me ape] Aine) eeeneree Teton oa 1s "elw ELECTRICAL CHARACTERISTICS (10=29 ures omerwsesectes) Sento Peemeee Sv, Peon. t=rt9wie oan"MITSUBISHI RF POWER TRANSISTOR 28C1947 NPN EPITAXIAL PLANAR TYPE TEST CIRCUIT favre 2in=s09 100,17.3° 100,27, 1° t sope Zournsoa wo 259F 10006. 47000F, 0%, uF in rast TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION vs. COLLECTOR CURRENT Vs ‘AMBIENT TEMPERATURE COLLECTOR To EMITTER VOLTAGE » T To=esic Tore ao a a & & 10m A g 4 SE Eos a KR {bm a EAT SNK 5 fis 2 at a tal i Z od oy . € 12 a) cOULECTOR 70 EMTTEN VOLTAGE Vee COLLECTOR To EMITTER BREAKDOWN Dc CURRENT GAIN vs, Vvoutade vs COLLECTOR CURRENT BASE TO EMITTER RESISTANCE 1 19 | x os0ma a 2 Zw 28 al s Ey a ie Pe af « ae | be. 1 88 oo Qa 30 Go TOTO POINT STovion a ae aT COLLECTOR CURRENT le fn BASE TO EIEN ESSTANCE Fs (0)MITSUBISHI RF POWER TRANSISTOR 2801947 NPN EPITAXIAL PLANAR TYPE ourrut rower, COLLECTOR OUTPUT CAPACITANCE VS, COLLECTOR EFFICIENCY _- COLLECTOR To BASE VOLTAGE Vs. INPUT POWER 3 ce : 5 ~ mT a. 2 zx z : 5 al 2 | [ 3 3 Hees 3 2) 5 y t je 2 5 7 3 no 3 21 1 if i 8 aoe aaa OUTPUT POWER Vs. COLLECTOR SUPPLY VOLTAGE (Sie — s[veron sv Be a 4 ZA, I ee COLLECTOR SUPLY VOLTAGE ex M1 ar