International Ter Rectifier Logic-Level Gate Drive Advanced Process Technology Dynamic dvidt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETS from Intemational Rectifier utilize advanced processing techniques to achieve the lowest possible ontesistance persiiconarea. Thisbeneft combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known fr, provides the designer with an extremely ficient device for use in @ wide variety of applications. The TO-220 package Is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The ow thermal resistance and low package cost of the TO:220 contribute to its wide ‘acceptance throughout the industy. Absolute Maximum Ratings PD - 9.1346B IRLZ44N HEXFET® Power MOSFET To-22028 Parameter Units HO Te= SO _| Continuous Brain Curent, Ves @ TOV a Te= 100°C | Continous Drain Current. Vas @ 10 a Pulsed Drain Curent © 160 Powor Dissipation 110) near Derating Factor ort wee Vas Gafe-o-Source Vaoiage Es, ‘Single Pulse Avalanche Energy © 210 md ta ‘Avalanche Curent 25 Eas Rapettive Avalanche Energy 11 nd ih Peak Diode Recovery aviet & 50 Vine w ‘Operating Juneton and Tera Storage Temperature Range ee ‘Sciderng Temperature, fr 10 seconde 30 [1mm om case) ‘Mounting ioraue, 6-32 or MB screw. 70 Ton (7-1Nem) Thermal Resistance Parameter We. Max. Units Fuso Tunatione-Case = Ta Pics: ‘Case-io Sink, Fal, Greased Surace oso —— Fa unetion-o-Ambient — % asio7IRLZ44N International anne ee ic Electrical Characteristics @ T, = 25°C (unless otherwise specified) ="a = ey [teomesmcrnmee Flee! « Be Seaman ee eee {oss ee —T—]e80 ‘Vos = 44V, Vas = OV, Ti = 150°C SECC EEE a Gate-to-Source Reverse Leakage TF] ™ [Ves 5 ee SS eee tees SHHey [ras — xh [=| fem a ees oes ale dey a eee Source-Drain Ratings and Characteristics Se i [al ——eoios a, a FEY a ee © Frpettive rating: pulse wich ited by ‘max juneton temperature ( See fig. 11) @ Vop 25V, stating T)= 25°C, L= 70H Ros 250, ls = 258 (See Figure 12) Ts 175°C, @ Igo £254, dit = 270A, Vo Viens © Pulse with < 80Qus; duty cycle < 2%International IRLZ44N Tor Rectifier 20,5 PULSE WIDTH} 204s PULSE WIDTH 125% , Ty 175°C. Vos . Drain-o-Souree Voltage (V) Vg . Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics ~ V pgs 25 S i 20us PULSE WIDTH a Vos , Gate-to-Source Voltage (V) Ty , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. TemperatureIRLZ44N anne ee ic Igo « Reverse Drain Curren Woos on t= oe ICs = Cys + Oye , Ciy SHORTED 2400 Cae = Coe loom = Cas + Cas Vog » Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Tae 8G f= 05° Vos =0v V0 . Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage nt (A) Drain International = Vs = 28V) FoR TEST ciRCUIT 5 SEE FIGURE 13, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ‘OPERATION It THIS AREA LIMITED: BY Rosin) ite = 25° nS > trac Single Pulse Vp Drain-to-Souree Voltage (V) Fig 8. Maximum Safe Operating AreaInternational IRLZ44N Tor Rectifier ® Be Vesa v « 8 (i bour : Ls # ‘veo = {s0v Fig 10a. Switching Time Test Circuit Vs od os 30 7% 11518 75 "ro, Gate Temperate (°C) 1 Ves Thermal Response (Zthuc) Fig 9. Maximum Drain Current Vs. Case Temperature HERMAL RESPONSE on Yao Fig 10b. Switching Time Waveforms ty, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal impedance, Junction-to-CaseIRLZ44N Vos >] Fig 12a. Unclamped inductive Test Circuit hs ———l Fig 12b. Unclamped Inductive Waveforms Charge + Fig 13a. Basic Gate Charge Waveform Single Pulse Avalanche Energy (mn. International lop taal fa orrom 254} o Won =254 Starting T,, Junction Temporature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 13b. Gate Charge Test CircuitInternational Tor Rectifier IRLZ44N Peak Diode Recovery dv/dt Test Circuit [

| Yoo pe tpotes 7 ‘ Voltage Body Diode ) Forward Drop [rsucorcuert eee Fipple < 5% eo Le ee * Vas = 5V for Loge Lovel Davioos Fig 14. For N-Channel HEXFETSIRLZ44N Intemational Package Outline 0-206 Outline Dimensions are shown in milimeters (inches) regi 97] BBS Sm rae oo _ pT i Pe isis fr ai 1 ia ath" “ge ER Io 7 ote tin a Sore Leet Part Marking Information 70-2208 EXAMPLE: THIS IS AN IRF1O10 WITH ASSEMBLY LOT CODE 981M INTERNATIONAL PART NUMBER RECTIFIER aru oso KR bare cove ASSEMBLY oe lor cove sc ww = WEEK Internationa T@R Rectifier aa aatnia ior eeae nausea suena ee ee trae ene Gace Sacer g gi Lear aiat uaa recente tan ae eacieal sige iecs anane suse one seen to Asa ont Pog og Ton Oey Sule, Syn ne ToL