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Analysis of Dispersion Characteristics of

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 SETIT 2005
3rd International Conference: Sciences of Electronic,
Technologies of Information and Telecommunications
March 27-31, 2005 – TUNISIA

Analysis of Dispersion Characteristics of Microstrip Lines

S. Redadaa*, M. Benslama**

* Department of Electronics, Faculty of Engineering, University of Guelma

B.P 401 Guelma (24000) - Algeria

redasdz@yahoo.fr

** Department of Electronics, Faculty of Engineering, University of Constantine

Constantine (25000) - Algeria

malekbenslama@hotmail.com

Abstract: This paper presents an efficient hybrid method namely spectral domain approach (S.D.A.) for the analysis of
dispersion characteristics of microstrip lines. The analysis is based on the Green's functions/moment method, where the
electric-fieled intergal equation, representing the boundary condition that the total field must vanish on the perfect
electric conductors of the structure, is discretised by the Galerkin method. The unknown coefficients are evaluated by
solving the resulting matrix equation.
Keywords: Analysis, Microstrip Lines, Microwave Circuits, Spectral Domain Method.

to a large number of transmission line structures. The

1. Introduction
Planar transmission structures are widely used in
microwave, millimeter-wave circuits and high speed
digital circuits. These are striplines, microstrips and
coplanar waveguides [Collin, 1987]-[Gupta & al., 1979].
Spurious radiation may occur at discontinuities of the
microstrip lines. Moreover, it is a common situation
that they can interfere with other devices or lines
placed in the same environment. To this purpose, the
electromagnetic investigation is particularly important
in the time domain, where we have transient
phenomena in response to an impulse excitation. In
this case the analysis becomes more complicated, in
particular when a lot of devices is present in the same
environment. The presence of these impulsive fields
provides a great amount of electromagnetic
disturbance against which the microstrip should be
immune. With that the analysis of the microstrip
susceptibility becomes an important requirement for
its design. In this contribution we present an analysis
of single and coupled microstrip lines.
The application of the Fourier transform can solve
many of the dificulties with the space domain integral
equation method, and leads to the so-called Spectral
Domain Method (SDM). This technique was first
developed for shielded microstrip lines by Itoh and
Mittra [Itoh & al., 1974], and has since been extended
SDM is essentially a procedure for computing the
Green's function for the problem by Fourier
decomposition, reducing the problem to that of
solving algebraic equations. Provided that the basis set
for the Moment Method solution can be transformed
analytically, it reduces the computation burden to the
evaluation of integrals or series in one dimension. The
key requirements of the Spectral Domain Method are
the existence of planar dielectric regions which are
uniform in lateral extent, and infinitesimally thin
perfect conductors which lie along a dielectric
interface.
2. Microstrip Lines
A microstrip line consists of a substrate, a ground
plane and a metal strip etched on the top of the
substrate as shown in Figure 1.a. Conductors are
usually gold plated and the substrate material,
depending on the application requirements, can be a
dielectric, a ferrite, a semiconductor or something
else. As part of a circuit, the microstrip line together
with other circuit compnents are enclosed within a
matal box as shown in Figure 1.b. The function of the
box is to provide the electromagnetic shielding as well
as to protect the circuit against shocks and vibrations.
In studying microstrip lines, the size and the shape of
the box are important factors.
SETIT2005

since E z ,i is an even function of x , φ i α n , y will b g

αn.
y
Metal strip
be an even function of Hence, the alternative
Air
Substrate µ 2 ,ε 2
2w
h form of Eq.(3) is
µ1 , ε1 Dielectric d
∞
j∑ φ~ bα , yg cosbα xge
Ground plane

(a)
2a
x
e
E z ,i = 2 k i2 − β 2 i n n
− jβz
(4)
(b) n =0
y
We note that at the dielectric interface, the
µ 2 ,ε 2 Air
longitudinal section electric (LSE) and longitudinal
section magnetic (LSM) modes are coupled to satisfy
h
2w 2s 2w the boundary conditions. This gives us the
µ1 , ε 1 Dielectric d
fundamental equation of the spectral method form of
matrix connecting the tangential electric field
2a
x
b g
components E x , E z in the Fourier domain and the
(c)
surface current densities bJ x , Jz g in the tangential
Figure 1. Cross-section of (a) an open microstrip line plane. Thus, we obtain
(b) a shielded microstrip line (c) coupled strip line.
~
b g ~
b g J~
E z = G11 α n , β J x + G12 α n , β x

In the analysis, we consider a microstrip line with

~
b g ~
b g J~
E x = G 21 α n , β J x + G 22 α n , β
(5)
x

J b x g, J b z g and β are the unknown of the system.

the cross-section shown in Figure 1.b. The dispersion
expression can be found upon the successful solution x x

The matrix Gbα , β g is known as the dyadic Green's

of Maxwell's equations, subject to boundary
conditions for the structure of concern. Since the n
microstrip line can only support hybrid modes (TE function, its elements G ij are a function of the
and TM modes simultaneously) [Mittra & al., 1974],
geometrical and electric parameters of the structure as
two scalar potential functions φ i and ψ i are required well as the frequency and the constant of propagation .
in order to obtain the full-wave solution , where the to calculate these functions, we used the method
subscript i = 1, 2 indicate the two dielectric media. known as " Immitance approach " introduced into the
These functions are solutions of the wave equations: literature by Itoh [Itoh, 1980] which has the advantage
of determining the Green's functions of the multi-
e
∇ 2t ui + k i2 − β 2 ui = 0 j (1) layer and multi-conductor structures without passing
by the calculation of the potential coefficients. The
where resolution of the system of equations uses the method
of the moments (Galerkin method), with a suitable
∂ r ∂ r
∇t = i+ j choice of the basis functions for J (or E ) and led to
∂x ∂y the equation of the sought dispersion from which one
k i2 = ω 2 µ i ε i can determine the characteristics of propagation of the
studied lines.
ω is the angular frequency and β denotes the phase
constant of the wave in the z-direction. 3. Galerkin Technique
The Fourier series theory allows the above Within the framework of the technique of
functions to be expanded in terms of trigonometric Galerkin, one starts first of all, by developing the
functions of x as follows : components of the current transformed on the strips
+∞
like linear combination of known basis functions in
∑φ bα g
~
φi = i n , y e− jαn x the following form :
n=−∞
(2) R
+∞ ~
Jx x =b g ∑ a J~ b xg
ψi = ∑ψ~ bα g
, y e− jαn x
r x, r
i n r =1
n=−∞ (6)
M

where α n is the Fourier parameter which is found by

~
Jz x =bg ∑ ~
a r J z, m x bg
m =1
examining the field behaviour along the x -direction.
The basis functions are selected so that their inverse
The field component E z ,i in the i th dielectric can be Fourier transforms are non-zero over the strip.
expressed as
On the perfect conductors, the tangential electric field
L ∞ 0 O is equal to zero and it is the same for the current
e
Ez,i = ki2 −β2 jMM∑φ~ bα , yge − jαnx
+ ∑φ bα , yge α PPe β
~ −j nx −j z
(3) density on the dielectric. Therefore the current and
N
n=0
i n
n=−∞
i n
Q the electric field in the plane of metallization are
defined in two complementary spaces.
SETIT2005

This property makes it possible to write:

bg
J x ,r x =
b
sin rπ x w g
z z b g
+∞ +∞ 2
~ ~ ~ ~ 1− x w
J x E x dy = 0 and J z E z dy = 0 (7)

b xg = cos bm − 1gπ x w
(11)
−∞ −∞
J z ,m
1 − b x wg
By using this complementarity of the boundary 2

conditions as well as the Parseval's identity, we

obtains finally the following system:
R M 5. Results
∑ C1,1 '
r, m
bβga + ∑r C1,2 '
m, m
bβgb m = 0, m = 1, 2,... M
'
5.1 Single Strip Line
r =1 m=1
(8)
R M Figure 2 presents the dispersion characteristics of
∑C bβga + ∑C bβgb
r =1
2,1
r, r' r
m=1
2,2
m, r ' m = 0, r ' = 1, 2,... R the fundamental mode for various values of relative
permittivity. N indicates the number of Fourier terms
where and IN the total number of basis functions (R+M).

∑ G bα , β g J b xg J b xg
~ ~
C 1,1 ' = 11 n
*
z , m' x ,r
r,m 3.5
n εr = 2.65

∑G b bg bg g
8.875
~ ~
C 1,2 '
m, m
= 12 α n , β J z*, m' x J z ,m x 3
12.0

n (9)
= ∑ G bα , β g J b x g J b x g
~ ~
C 2 ,1' * 2.5

r,r 21 n x, r ' x ,r
β/ β0
n

= ∑ G bα , β g J b x g J b x g
2
~ ~
C 2 ,2 ' 22 n
*
x, r ' z ,m
m, r 1.5
n

we obtain an algebraic system of (R+M) 1

homogeneous linear equations according to (R+M)

0.5
unknown coefficients a r and bm . The nontrivial 0 2 4 6 8 10 12
Frequency (GHz)
14 16 18 20 22

solutions of the system of homogeneous equations

Eq.(8) provide at a given frequency f , the constants
of propagation of the modes guided by the structure. Figure 2. Dispersion characteristics of the fundamental
The nontrivial solutions are obtained by cancelling the mode for various values of relative permittivity with N=180,
determinant of the matrix. IN=8(a=6.35 mm, w=0.635 mm, d=1.27 mm, h=11.43 mm).

det C β = 0 bg (10) In Figure 3, we show the variation of the effective

dielectric constant for the same parameters.
The equation (10) represents the characteristic
equation of the system. Its resolution makes it
possible to calculate β at a given frequency and thus 12
εr = 2.65
8.875
the constant of propagation. 12.0
10

4. Choice of Basis Functions 8

εeff
To be effective, this choice must fill a certain 6
number of criteria:
- The selected basis functions for the current must be 4

non-zero over the strip only.

2

- This choice must take account of the singular

behavior of the electromagnetic field in the vicinity of 0
0 2 4 6 8 10 12 14 16 18 20 22
the edges. Frequency (GHz)

- The expansion of the current density must be done

in a complete base.
In order to ensure an optimal convergence, we used
the following functions which were tested from the
viewpoint precision and convergence. For the strip
lines , we have :
Figure 3. Effective dielectric constant for various values of
relative permittivity.
Figures 4 and 5 show dispersion characteristics and
the effective dielectric constant for various values of
w a with a relative permittivity ε r = 8.875 .
SETIT2005

8.5 14.5
even mode even mode
3 odd mode odd mode
w/a = 0.1 14
0.5
8
2.9 0.8 13.5

13
2.8 7.5
12.5
εeff
2.7 12
7
11.5
2.6
β/β0
11
6.5
2.5
10.5

2.4 6 10
0 5 10 15 20 0 5 10 15 20
Frequency (GHz) Frequency (GHz)

2.3
(a) (b)
2.2
0 2 4 6 8 10 12 14 16 18 20 Figure 7. Effective dielectric constant of the even and odd
Frequency (GHz)
modes for various values of relative permittivity
(a) ε r = 9.6 (b) ε r = 16 .
Figure 4. Dispersion characteristics of the fundamental
mode for various values of w a .
We have examined the influence of the parameter of
the structure on the the dispersion characteristics for a
given relative permittivity.
9
w/a = 0.1
0.5
8.5 0.8
3 2.9
even mode even mode
8 odd mode odd mode
2.95
2.85
7.5
2.9
2.8
7 2.85
εeff

6.5 2.75
2.8

6 2.75 2.7
β/ β0
5.5 2.7
2.65

5 2.65
0 2 4 6 8 10 12 14 16 18 20 2.6
Frequency (GHz)
2.6

Figure 5. Effective dielectric constant for various values of 2.55

2.55

w a. 2.5 2.5
0 5 10 15 20 0 5 10 15 20
We have used the Gauss elimination technique to Frequency (GHz) Frequency (GHz)

compute the values of the determinant of the final Figure 8. Dispersion characteristics of the even and odd
matix. We have found that spurious solutions appear modes (a) 2 s d = 1 , (b) 2 s d = 4 ( ε r = 9.6 ).
for high frequencies and high permittivity of the
substrate.
9 9
even mode even mode
odd mode odd mode

8.5 8.5

5.2 Coupled Strip Lines

8 8
we have plotted the dispersion characteristics and
the effective dielectric constant for various values of 7.5 7.5
εeff
relative permittivity for the two modes (even and odd).
7 7

4 6.5 6.5
even mode even mode
2.9 odd mode odd mode
3.9
6 6
2.8 3.8 0 5 10 15 20 0 5 10 15 20
Frequency (GHz) Frequency (GHz)
3.7
2.7
3.6
β/β0
Figure 9. Effective dielectric constant of the even and odd
modes(a) 2 s d = 1 , 2 s d = 4 ( ε r = 9.6 ).
2.6 3.5

3.4
2.5

3.3
In the above curves, we note that the variation is less
2.4
3.2
important at the very high frequencies between the
2.3 3.1
two modes.
0 5 10 15 20 0 5 10 15 20
Frequency (GHz) Frequency (GHz)

(a) (b) Conclusion

Figure 6. Dispersion characteristics of the even and odd In this paper, we presented an analysis of
modes for various values of relative permittivity
dispersion characteristics of the microstrip lines by
(a) ε r = 9.6 (b) ε r = 16 . the method of approach in the spectral domain.
 SETIT2005

Under special circumstances, the differential equations

governing the behaviour of the structure can be
transformed into this domain, where the transformed
equations have an easy solution.
The Green's functions present simple forms in the
Fourier domain contrary to the space domain where
them form is sometimes impossible to identify.
The physical nature of the electromagnetic field is
directly built-in in the process of resolution via the
choice of the basis functions. The precision can be
systematically improved by increasing the size of the
matrix associated with the system with linear
equations.

References
[Collin, 1987] R.E. Collin., "Field Theory of Guided
Waves", 2nd ed., New York, 1987.
[Gupta & al., 1979] K.G. Gupta, R. Garg and I.J. Bahal
"Microstrip Lines and Slotlines", Dedham, MA: Artech
House, Inc., 1979.
[Itoh & al., 1974] T. Itoh, R. Mittra., "A Technique for
computing dispersion characteristics of shielded
microstrip lines", IEEE Trans. microwave Theory Tech,
vol.22, pp. 896-898, 1974.
[Itoh, 1980] T. Itoh, "Spectral domain immitance approach
for dispersion characteristics of generalized printed
transmission lines", IEEE Trans. on MTT, vol. 28,
No 7, pp. 733-736, 1980
[Mittra & al., 1974] R. Mittra, T. Itoh., "Analysis of
microstrip transmission lines", in : Advances in
Microwaves, vol.8, Academic Press, New York, 1974.

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