APM2558NU ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

· 25V/60A, D
RDS(ON)=4.5mW (Typ.) @ VGS=10V
S
RDS(ON)=7.5mW (Typ.) @ VGS=4.5V
· Reliable and Rugged G

· Avalanche Rated
Top View of TO-252-3
· Lead Free and Green Devices Available
D
(RoHS Compliant)

Applications G

· Power Management in Desktop Computer or

DC/DC Converters.
S

N-Channel MOSFET

Ordering and Marking Information

APM2558N Package Code

U : TO-252-3
Assembly Material
Operating Junction Temperature Range
Handling Code C : -55 to 150 oC
Handling Code
Temperature Range TR : Tape & Reel (2500ea/reel)
Package Code Assembly Material
G : Halogen and Lead Free Device

APM2558N U: APM2558N XXXXX - Lot Code

XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright ã Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. A.3 - March, 2014
APM2558NU ®

Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 25
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
IS Diode Continuous Forward Current 40 A
TC=25°C 160
IDP 300μs Pulse Drain Current Tested A
TC=100°C 90
TC=25°C 60*
ID Continuous Drain Current A
TC=100°C 48
TC=25°C 50
PD Maximum Power Dissipation W
TC=100°C 20
RqJC Thermal Resistance-Junction to Case 2.5 °C/W
RqJA Thermal Resistance-Junction to Ambient 50 °C/W
EAS Drain-Source Avalanche Energy, L=0.5mH 225 mJ
Note：* Current limited by bond wire.

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

APM2558NU
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 25 - - V
VDS=20V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current mA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.3 1.8 2.5 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA
a VGS=10V, IDS=40A - 4.5 5.7
RDS(ON) Drain-Source On-state Resistance mW
VGS=4.5V, IDS=20A - 7.5 10
Diode Characteristics
a
VSD Diode Forward Voltage ISD=40A, VGS=0V - 0.85 1.1 V
trr Reverse Recovery Time - 25 - ns
IDS=40A, dlSD/dt=100A/ms
Qrr Reverse Recovery Charge - 10 - nC

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Rev. A.3 - March, 2014
APM2558NU ®

Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)

APM2558NU
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
b
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.6 - W
Ciss Input Capacitance - 2000 2800
VGS=0V,
Coss Output Capacitance VDS=15V, - 400 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 320 -
td(ON) Turn-on Delay Time - 14 26
tr Turn-on Rise Time VDD=15V, RL=15W, - 12 23
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6W - 49 89
tf Turn-off Fall Time - 21 39
b
Gate Charge Characteristics
Qg Total Gate Charge - 22.5 32
VDS=15V, VGS=4.5V,
Qgs Gate-Source Charge - 5.6 - nC
IDS=40A
Qgd Gate-Drain Charge - 13 -
Note a : Pulse test ; pulse width£300ms, duty cycle£2%.
Note b : Guaranteed by design, not subject to production testing.

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Rev. A.3 - March, 2014
APM2558NU ®

Typical Operating Characteristics

Power Dissipation Drain Current

60 70

50 60

ID - Drain Current (A)

50
40
Ptot - Power (W)

40
30
30
20
20

10
10
o
TC=25 C o
TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

400 2

1
100 Duty = 0.5
Normalized Effective Transient
it
im
)L

1ms
ID - Drain Current (A)

0.2
s(o
Rd

10ms
0.1
10 100ms

1s 0.05
0.1
DC
0.02
1
0.01

2
O Mounted on 1in pad
TC=25 C o
Single Pulse RqJA :50 C/W
0.1 0.01
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright ã Sinopower Semiconductor, Inc. 4 www.sinopowersemi.com

Rev. A.3 - March, 2014
APM2558NU ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

160 14
VGS= 5,6,7,8,9,10V 4.5V

140
12

RDS(ON) - On - Resistance (mW)

120
10 VGS=4.5V
ID - Drain Current (A)

4V
100
8
80

3.5V 6 VGS=10V
60

4
40
3V
20 2

2.5V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

18 1.6
IDS=40A IDS =250mA
16
RDS(ON) - On - Resistance (mW)

Normalized Threshold Voltage

1.4
14
1.2
12

10 1.0

8 0.8

6
0.6
4
0.4
2

0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright ã Sinopower Semiconductor, Inc. 5 www.sinopowersemi.com

Rev. A.3 - March, 2014
APM2558NU ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 160
VGS = 10V
100
1.8 IDS = 40A
Normalized On Resistance

1.6

IS - Source Current (A)

1.4 o
Tj=150 C
1.2 o
Tj=25 C
1.0 10

0.8

0.6

0.4

0.2 1
o
RON@Tj=25 C: 4.5mW
0.0 0.5
-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5

Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V)

Capacitance Gate Charge

3000 10
Frequency=1MHz VDS= 15V
2700 9 ID= 40A
VGS - Gate-source Voltage (V)

2400 8
C - Capacitance (pF)

2100 7
Ciss
1800 6

1500 5

1200 4

900 3

600 2
Coss
Crss 1
300

0 0
0 5 10 15 20 25 0 9 18 27 36 45

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright ã Sinopower Semiconductor, Inc. 6 www.sinopowersemi.com

Rev. A.3 - March, 2014
APM2558NU ®

Avalanche Test Circuit and Waveforms

VDS VDSX(SUS)
L tp

VDS
DUT
IAS

RG
VDD
VDD
EAS
tp IL
0.01W
tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

Copyright ã Sinopower Semiconductor, Inc. 7 www.sinopowersemi.com

Rev. A.3 - March, 2014
APM2558NU ®

Package Information
TO-252-3

E A
c2 E1
b3

L3

D1
D

H
L4

c
b e
SEE VIEW A
0

GAUGE PLANE SEATING PLANE

L
A1
0.25

VIEW A

S TO-252-3 RECOMMENDED LAND PATTERN

Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX. 6.25 MIN.
A 2.18 2.39 0.086 0.094
A1 - 0.13 - 0.005
b 0.50 0.89 0.020 0.035
b3 4.95 5.46 0.195 0.215 6.8 MIN.
c 0.46 0.61 0.018 0.024
c2 0.46 0.89 0.018 0.035
D 5.33 6.22 0.210 0.245 6.6
D1 4.57 6.00 0.180 0.236
E 6.35 6.73 0.250 0.265
E1 3.81 6.00 0.150 0.236 3 MIN.
e 2.29 BSC 0.090 BSC
H 9.40 10.41 0.370 0.410 2.286
L 0.90 1.78 0.035 0.070
1.5 MIN.
L3 0.89 2.03 0.035 0.080
4.572
L4 - 1.02 - 0.040
0 0° 8° 0° 8° UNIT: mm
Note : Follow JEDEC TO-252 .

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Rev. A.3 - March, 2014
APM2558NU ®

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 A
OD1 B
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F
330.0± 16.4+2.00 13.0+0.50
2.00 50 MIN. -0.00 -0.20 1.5 MIN. 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05
TO-252-3 P0 P1 P2 D0 D1 T A0 B0 K0
1.5+0.10 0.6+0.00 10.40±
4.0±0.10 8.0±0.10 2.0±0.05 -0.00 1.5 MIN. -0.40 6.80±0.20 0.20 2.50±0.20

(mm)

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Rev. A.3 - March, 2014
APM2558NU ®

Taping Direction Information

TO-252-3

USER DIRECTION OF FEED

Classification Profile

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Rev. A.3 - March, 2014
APM2558NU ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm 3
Thickness <350 ³350
<2.5 mm 235 °C 220 °C
³2.5 mm 220 °C 220 °C

Table 2. Pb-free Process – Classification Temperatures (Tc)

3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
³2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050

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Rev. A.3 - March, 2014