Infineon technologies Cool MOS™ Power Transistor Feature SPW20N60S5 Vos 600 | v Rosion oi9 | 2 * New revolutionary high voltage technology lb nt A * Ultra low gate charge * Periodic avalanche rated + Extreme dv/dt rated * Ultra low effective capacitances ‘* Improved transconductance Type Package Ordering Code _| Marking ee SPw20Ne0ss _|P-T0247 __[a67040-84236 _ | 20N60S5 cle phi Kowce pn Maximum Ratings Parameter symbol Value Unit Continuous drain current Ip A Te= 25°C 20 To = 100°C 13 Pulsed drain current, fp limited by Timax Tp puls 40 Avalanche energy, single pulse Eas 690 md Ip =10A, Vp = 50 V Avalanche energy, repetitive fag limited by Timax'| Ean 1 Ip =20A, Vop = 50V Avalanche current, repetitive fap limited by Tmax |/an 20 A Gate source voltage Ves #20 v Gate source voltage AC (f>1Hz) Vas 230 Power dissipation, To= 25°C Prot 208 w Operating and storage temperature Ty. Tota 55.4150 [°C Rev. 2.1 Page 2004-03-30Infineon technologies SPW20N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dvidt 20 Vins Vos = 480 V, Ip = 20A, Tj= 125°C Thermal Characteristics Parameter ‘Symbol Values Unit min. | typ. | max. Thermal resistance, junction - case Fins * - | 06 [KW Thermal resistance, junction - ambient, leaded Rina - | 60 Soldering temperature, Teoid - - | 260 |°c 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T)=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. | typ. | max. Drain-source breakdown voltage | Viar)ss) 600 | - - |v Drain-Source avalanche Veryos - | 700] - breakdown voltage Gate threshold voltage Vesithy | 010004, Ves=Vog 3.5 | 45 | 5.5 Zero gate voltage drain current |/pg5__| Vps=600V. Vag=0v. HA T25°c, os | 5 Te150°¢ 250 Gate-source leakage current | lass __| Vas=20V. Vos=ov | - -__| 100 [na Drain-source on-state resistance | Rpg(on) | Ves=19V. /o=134, Q Tp25°¢ - | 0.16 | 0.19 Tz150°C - | 043] - Gate input resistance Re f=1MHz, open Drain # 12 € Rev. 2.1 Page 2 2004-03-30Infineon technologies SPW20N60S5 Electrical Characteristics , at T,= 25 °C, unless otherwise specified Parameter Symbol] Conditions Values Unit min. | typ. | max. Characteristics Transconductance Gis Vps22"Ip’Ros(onmax: - 12 - |s Ipet3A Input capacitance Ciss Ves=0V, Vpg=28V. - | 3000] - (pF Output capacitance Coos _| #IMHZ - [aro - Reverse transfer capacitance | Cres - | 28 : Effective output capacitance,2)| Corer) | Vas=0Vv. - | 83 | - |pF energy related Vps=0V to 480V Effective output capacitance,3)| Coit) - | te] - time related Tum-on delay time taony _| Yoo=350V. Veszortov, | _- | 120 | - Ins Rise time t Ip=20A, Ag=3.60 - | 25 | - Tum-off delay time tavort) -_| 130 | 195 Fall time th - | 30 | 45 Gate Charge Characteristics Gate to source charge Qys__| Vpp=350V, [p=20, - [24 = [nc Gate to drain charge ua - [a7 | - Gate charge total Q Vpp=350V, Ip=20, - | 79 | 103 Vgg=0 to 10V Gate plateau voltage Viplateau) | Voo=350V. Ip=20A - 8 - |v ‘TRepetitve avalanche causes additional power losses that can be calculated asPa 2a a fixed capacitance that gives the same stored energy a8 Coes vile Vos is rising from 0 0 80% Voss. 30, is a fixed capacitance that gives the same charging time aS Cass while Vos is rising from 0 to 80% Vpgs. Rev. 2.1 Page 3 2004-03-30Infineon technologies SPW20N60S5 Electrical Characteristics, at 7; = 25 °C, unless otherwise specified Parameter Symbol] Conditions Values Unit min. | typ. | max. Inverse diode continuous lg Te=25°C 7 - | 20 [a forward current Inverse diode direct current, Io - - | 40 pulsed Inverse diode forward voltage | Vsp__| Vas=0V, Ir=is - 1 [12 |v Reverse recovery time by Vp=350V, Ip=Ig , - | 610 | - [ns Reverse recovery charge Q, | dip/d100A/us - | 12 [ - [ue Typical Transient Thermal Characteristics Symbol value Unit | Symbol value Unit typ. typ. Thermal resistance Thermal capacitance Rint 0.00769 KW [Cnt 0.0003763 Wsik Rin2 0.015 Ging 0.001411 Rug 0.029 Cina 0.001931 Ria 0.114 Gira 0.005297 Ring 0.136 Cs 0.012 Rive 0.059 Cine 0.091 Rev. 2.1 Page 4 2004-03-30Infineon technologies SPW20N60S5 1 Power dissipation 2 Safe operating area Prot = f (To) Ib=f( Vos) parameter : D= 0, Tc=25°C ag Pots 102 w 200/ 180) 160-44 4 a e 140) ‘9 L be a al 20 a a] OO TOD TD “C100 —e» To 3 Transient thermal impedance Zinc =F (tp) parameter: D = t/T 10% Kw 107 Zinc 104 LE D=05 D=02 De01 SD 2005 {PD = 0.02 hp =001 —. 10°) single pulse 10* 10 Rev. 2.1 A 10" 10 sols 10 10 4 Typ. output characteristic Ip =F (Vs): 5° parameter: tp = 10 us, Veg 757 & 20v 5 1BV 5s 0 OCOD —» Vos 2004-03-30Infineon lechnologies SPW20N60S5 5 Typ. output characteristic 6 Typ. drain-source on resistance Ip =f (Vos); Tj=180°C Rosionj=Alp) parameter: fp = 10 us, Ves parameter 35 15 = ma + - A 20v — tT Ww 13 =a eee tov — wv +S e 2 25 & 2 wl gu 4 0 5 mo 1 VO 0 5 1 15 2 2 90 A aD = Vos —» | 7 Drain-source on-state resistance 8 Typ. transfer characteristics Ros(on) =f (Tj) Ip= f( Ves )s Vos 2 x Ip x Ros(onjmax parameter : Ip = 13 A, Veg = 10 V parameter: fy = 10 us sous 1 70: 2 | a ° © 85 z os a B o7 26 os Py . 5 05) a %o 2020100 180 a 3 10 7 2 7 > Vos Rev. 2.1 Page 6 2004-03-30Infineon technologies SPW20N60S5 9 Typ. gate charge Vas =f (Qcate) parameter: Ip = 20 A pulsed 10 Forward characteristics of body diode Ir =f (Vsp) parameter: T;, fp= 10 us 6 SHRI 102, Sass { v A 02 Vos [| 12} 08 Vom ; f . £10 ae 8 he t od L 10° [ 1,=25°Cyp 4 7,= 180°C 3p 7, 25°C (6%) T= 150°C (90%) ‘0 24 6S 0 04 08 12 16 2 24V 9 + %aie —» Yeo 11 Avalanche SOA 12 Avalanche energy Jar =f (tar) Eas = f(T) par.: Tj< 150°C par. Ip = 10.A, Vpp = 50 V 205 ry 750} ms \ A 00 sso) t « 2 500 s Was) t 10 Ly 4 | x0) { Tjerr-25°0 { ooo 250 1 200 150 100 0 L Yo? 107 107 10° 10° 10° ys 10° % 40 eo 80100 «20 °c 100 > tar eT Rev. 2.4 Page7 2004-03-30Infineon technologies SPW20N60S5 13 Drain-source breakdown voltage 14 Avalanche power losses Vers = f (T)) Par =f (f) parameter: Eqg=1mJ no SmI «oo v w oso & cco % = © xg I o10 te t 20 exo st ia LH LLL sea | ae oF 108 Hz 108 —- 15 Typ. capacitances 16 Typ. Coss Stored energy C=F(Vps) Eoss=MVos) parameter: Vgg=0V, 1 MHz 10°, 4 pF bd 2 " 10 Foss © 105 { 102 10" a 108 0 100 «200 «300 «00S 0 100 «20D —» Yps —» Vos Rev. 2.1 Page 8 2004-03-30Infineon technologies SPW20N60S5 Definition of diodes switching characteristics Rev. 2.1 Page 9 2004-03-30Infineon technologies SPW20N60S5 P.TO-247-3-1 1 | |lozeemax 400 29 ~~ 56 General tolerance unless otherwise specitied: Leadrame pars: 40.05 Package parts 20.12 Rev. 2.1 Page 10 2004-03-30Infineon technologies SPW20N60S5 Published by Infineon Technologies AG, Berelchs Kommunikation St-Martin-Strasse 3, D-81541 Miinchen © Infineon Technologies AG 1999 All Rights Reserved. Attention please! ‘The information herein is given to describe certain components and shall not be considered as warranted characteristics ‘Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of nou-infiingement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufscturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). ‘Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office Infineon Technologies Components may only be used in life-support devices or systems with the express ‘written approval of Infineon Technologies. if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems arc intended to be implanted in the human body. or to support and/or maintain and sustain and/or protect human life. If they fei, it is reasonable to assume thar the health of the user or other persons may be endangered. Rev. 2.1 Page 11 2004-03-30