US 2 009012404481 cu») United States cz) Patent Application Publication co) Pub. No.: US 2009/0124044 A1 Hung et al. 4) Pub, Date: May 14, 2009 6 EMOVING BUBBLES FROM. Publication € ROF SEMICONDUCTOR 651) Int. HOI 2180 (2006.01) (32) US.CL 76) Shu (21) Appl.Nos — 12/289,809 (2) Filed 2008 G0) Foreign Application Priority Data Nov 9, 2007 (rw) 96142525, 931Patent Application Publication May 14, 2009 Sheet 1 of 9 US 20090124044 AI Preparing Semiconductor Chips, and Attaching ;————+! Semiconductor Chips at Lower Surface to Upper. T~ 101 Surface of Base Using Adhesive Material £ Placing Base Plate with Semiconductor Chips in} 199 Processing Tank before Adhesive Material Starting| Curing or Becoming Fully Cured Repeating Steps t 101 t0 106 Setting Processing Tank to Predetermined for Stacked ‘Temperature by Heating at Predetermined Heating Semiconductor | | Rate and to Predetermined Pressure for 103 Chips Predetermined Period of Time t Expelling Bubbles in Adhesive Material, at Interface Between Adhesive Layer and Base Plate, 104 and at Interface Between Adhesive Layer and Semiconductor Chip from Fringes of Adhesive Material q Taking Out Base Plate with Semiconductor Chips from Processing Tank q Connecting Bonding Pads on Upper Surface of each of Semiconductor Chips with Corresponding }~ 106 Bonding Points on Base Plate by Metal Wires Through Wire Bonding q Encapsulating Semiconductor Chips in Packaging Resin Molded Through Injection Molding ~~ 107 1 Subjecting Packaging Resin to Post Mold Cure for Hermetically Containing Semiconductor Chips in Cured Packaging Resin 105 p~ 108 FIG.1Patent Application Publication May 14, 2009 Sheet 2 of 9 US 20090124044 AI FIG.2 v FIG.3Patent Application Publication May 14, 2009 Sheet 3 of 9 US 20090124044 AIPatent Application Publication May 14, 2009 Sheet 4 of 9 US 20090124044 AI N FIG.5Patent Application Publication May 14, 2009 Sheet 5 of 9 US 20090124044 AI + 2b \ ZA FIG.6 2aPatent Application Publication May 14, 2009 Sheet 6 of 9 US 20090124044 AI — FIG.7 52—~Lo eT 51 FIG.8Patent Application Publication May 14,2009 Sheet 7 of 9 US 20090124044 AI [D771 \ VILLA LELELL WELLE va Ye Ky MLL CL DO IIZI FIG.10Patent Application Publication May 14, 2009 Sheet 8 of 9 US 20090124044 AI FIG.11 7 7 6a & J _ fa 741 742 71 721 \ 722 732 lll FIG.12Patent Application Publication May 14, 2009 Sheet 9 of 9 US 20090124044 AI EESTI pS a ZR CO PXEGEG IO Le a A 731 721 722 732 WL FIG.14US 2009/0124044 AI METHOD FOR REMOVING BUBBLES FROM. "ADHESIVE LAYER OF SEMICONDUCTOR. ‘CHIP PACKAGE, FIELD OF THE INVENTION 10001] The present invention relates generally to a semi ‘conductor chip packaging technology, and more particularly to a method for removing bubbles from adhesive layer of semiconductor chip package, BACKGROUND OF THE INVENTION [0002] | Semiconductor chip packaging provides four major unetions, that is, power input, signal communication, heat ‘dissipation, and chip protection. The semivonductor chip is “driven by external power supply to work. Through semicon- “ductor chip packaging, the external power supply may ably supply power to drive the semiconductor chip to work. The semiconductor chip packaging also enables good signal com ‘munication, inching the transmission of signals generated by the semiconductor chip and the eceipt of signals trans- ited to the semicondoctor chip. Primarily these function ‘are achieved through cious disposed on base pte o ‘which the semiconductor chip packaging is earsied, [0003] The semiconductor chip will generate a large “amount of heat during working or receiving signals ransmit- ted thereto, With a heat tras ter mechanism proved by the semiconductor chip package for efficiently dissipating the heat generted by the working system, the semiconductor chipisable to work at aormal working temperature, However, Jn the event there ar bubbles presented in the semiconductor chip package, the Deat generated by the working system ‘wid ead to thermal expansion of moisture contained inthe bubbles. The expanded bubbles will directly adversely afoot the reliability and quality of the prodict. Therefore, i always an important isue inthe semicondvetor industy 10 Femove bubbles from the semiconductor chip package 10004} In the conventional semiconductor chip packaging process, a wale is first cut into chips of requiee sizes, and then, the chips are attached to the base. ln the process of applying or curing the adhesive material, bubbles would present inthe adhesive material at an interface hesween the Adhesive material and the hase, and at ‘an interface beeen the adhesive material and the chip. These bubbles result in & plurality of voids in the adhesive material when the latter is ‘cured, and inevitably adversely affect the reliability, the qual- fay, and even the factions ofthe product, [0005] According to a first conventional method, the bubbles in the adhesive layer are expelled by applying high temperature and high pressure in the process of resin molding {ora short period of time, Ina second conventional metho, the hubbles ia the adhesive layerare emaved by a vacuuming process, [na third conventional method, the process paraa- ‘eters of the chip implanting machine and other related manu Tcturing facilites are adjusted to avoid the generation of bubbles at the interface between the chip and the adhesive material. 10006] However, all the above-mentioned conventional methods have some disadvantages, Forexample, according to the ist ennventional method, to remave the bubbles from the adhesive material by applying high temperature and high pressure i the proces of resin molding fora short period of time, the adhesive material must become cured oF at least become cured toa certain degre. This requirement would May 14, 2009 arrow the conditions forthe semiconductor chip packaging process. Moreover, this method has limited elfect with espocto chips having relatively large areas because the high ‘temperature and high pressure exist only forashort period of ‘ime, [0007] In the case of removing dhe bubbles in the adhesive Jayer by vacuuming process, the adhesive material is gener- ally limited to that in he form of paste instead o film. There ore, the vacumming process has a very limited range of app cation. In addition, the bubble removing ellect of the vacuuming process is easily affected by the type of material ‘Therefore, the vacuuming process also narrows the condi- tions for the semiconductor chip packing process [0008] In dhe above-mentioned thin! method for avoiding ‘bubbles and eliminating voids in the adhesive material, some parameters for the chip implanting machine, such a chip femperature,chip-implanting pressure, and pressure dwell, fare adjusted, However, to reach the required wetness at the adhering interface during the chip implantation, it is often ‘edd lo raise the chip temperate and increase the chip- ‘implanting pressure andthe pressure dwell [0009] However, all these adjustments tend to adversely affect the chip quality or lead to reduced production efi ciency. Moreover. these adjustments are useless to the bubbles presented in the adhesive material. In addition, the effet ofthese adjustments reduces with increase ithe chip SUMMARY OF THE INVENTION [0010] A primary object ofthe present invention is to pro- vide a method for removing bubbles from adhesive layer of semiconductor chip package so that bubbles presented inthe adhesive material, at an nterace between the adhesive mate- Fal and the base, and st aa interface between the adhesive ‘material and the semiconductor chip can be effectively expelled. [0011] Anotherobject of the present invention isto provide ‘ametbod for inereasing the productivity inthe semiconductor chip packaging process [0012] To full the above objects, method for removing bubbles from adhesive layer of semiconductor chip package Js provided. One or more semiconductor chips reattached 10 or stacked on a base plate using an adhesive material. The base plate may bea substrate lead frame, rather carrier for carrying the semiconductor chips thereon forsignal inst sion. Refore the adhesive material starts curing or becomes {lly cured, the base plate with the semiconductor chips is placed in processing tank which is preset to heat ‘termined heating rising rate to a predetermined temper- ture and to apply a predetermined pressure for a predoter- amined period of time, so that bubbles presented in the adhesive material, at an interface between the adhesive mate- Fal and the base, and at an interface between the adhesive ‘material and the semiconductor chip are expelled fom the adhesive material under the temperature and pressure in the processing tank. 0013} According to the method ofthe present invention, before the adhesive material stars curing oF becomes filly ceured, the hase plate and the semicanductor chips attached thereto is placed in a processing tank. The processing tank is heated at'a predetermined heating rate to a predetermined temperature and is applied with a predetermined intemal pressure for a predetermined period of time, so that bubbles presented inthe adhesive material, atthe interface betweenUS 2009/0124044 AI the adhesive material, and atthe interface betwee sive layer and the semiconductor chip are expelled. (0014) Under the preset temperate and pressure of the processing tank, the bubbles in the adhesive material are ‘energized and expand, such that finally the bubbles are ‘expelled from the adhesive material [0015] The method of the present invention is able 10 remove bubbles from theauhesve layer whatever the number ‘andsizeof the bubbles areand whatever thesize ofthe chips, ‘Therefore, the method ofthe present invention is adapted to hips of diferent sizes to remove bubbles fom the adhesive ‘material. Unlike the conventional methods that try to expel the bubbles from the adhesive ayer by increasing te timeand pressure sed to adhere or implant the chips to or onthe base, he adhe- Jong Pressure to expel the bubbles Moreover, bubbles in the process of adhering the chips to the base plate may also be effectively removed with the method ‘ofthe present invention, [0016] |The method of the prevent invention is applicable to those semiconductor chip packaging demanding specific material performances and manufacturing conditions, n0 smaller wither there are any bubbles presented in the adhe- sive material when the chip i implaued on the base, There fore, the temperature the pressure, and the time required for implanting chips can be reduced to enable increased prodvc- tivity in the semiconductor chip packaging as well a reduced facility and manufacturing costs. 10017] The method is also applied tothe packaging of two ‘or more stacked chips. In an embodiment, after the wire bonding is completed forthe first semiconductor chip, a see- ‘ond semiconductor chip is stacked and attaches to the ist semiconductor chip through a layer of adhesive material ‘coated on a lower surface of the semiconductor chip. The stacked semicondoctor chp is put tothe processing tank 10 Femove the bubble, Then wire bonding ix processed for the bonding pads on an upper surface ofthe second semicondue- ‘orchip and bonding pointson the base or on the bonding pas ‘onthe frst semiconductor chip. These steps can be repeated Tor stacking more chips io the second semiconductor Chip. BRIEF DESCRIPTION OF THE DRAWINGS. [0018] The strcture and the technical means adopted hy the present invention to achieve the above and other objet ‘can be best understood by referring tothe following detailed ‘description ofthe prefered emboxtiments and the accompa nying drawings, wherein: [0019] FIG. 1is.« flow char showing the steps included in ‘a method for removing bubbles from adhesive ayer of seni ‘conductor chip package of the presen invention [0020] FIG. 2showsa base plateused ina first embodiment ‘ofthe present invention, on whicha plurality of chi-mmplant- ing areas re provided 10021] FIG. 3isa view according wo FIG. 2, shoving that 9 semiconductor chip is attached t0 one chip-implanting area ‘onthe base: 10022] FIG. 4 shows a base plate used ina second embod ‘meat of the present invention, on which a plurality of chip- implanting areas are provided, and a semiconductor chip is tached to each of the chip-implanting areas, 10023] FIG. 8 isa longitudinal sectional view showing @ plunity of semicancdictor chips reattached to the baseplate ‘aeconling othe ist embodiment ofthe present invention: May 14, 2009 [0024] FIG. 6s a longitudinal sectional view showing the base plate with «plurality of emicondctor chips shown ia FIG, § ate placed in a processing tank aecoaing to the frst embodiment of the present invention; [0025] FIG. 7s longitudinal sectional view showing that bubbles present in the adhesive layer, at an interface between an adhesive layer and the semiconductor chip, and at an face betwoea the adhesive layer and the base: [0026] FIG. 8 isacross-sectional view taken along ine 8-8 of FIG. 7: [0027] FIG. 9s 8 longitudinal setional view shoving the ‘Wire bonding for one single semiconductor chip according t0 the first embodiment of the present invention; [0028] FIG. 10s Hongitudinal sectional view showing the single semiconductor chip of FIG, 9 is encapsulated accord- ‘ng tothe first embostimeat ofthe presen invention; [0029] FIG. 11 sa longitudinal sectional view showing the ‘wire bonding for one single semiconductor chip according to second embodiment of the present invention: [0030] FIG. 12isa Jongimdinal setional view showing the single semiconductor chip of FIG. 11 is encapsulated accond- ‘ng tothe second embodiment of the present inwenton; [0031] FIG. 13isa longitudinal sectional view showing two stacked semiconductor chips are encapsulated according to the frst embodiment of the present invention; and [0032] FIG. A4isa longitudinal sectional view showing wo stacked semicandictor chips are encapsulated according to the sevond embodiment of the present invention DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS, [0033] Please refer FIG. 1 thatisa flow chart showing the steps inlided in a method for removing bubbles from adhe- sive layer of semiconductor chip package according to the present invention, [034] According toa fst step 101 of the method of the present invention, a baseplate 1, such as a substrate, a load ‘ame, or other carier that may be used 10 cary one or more chips thercon for receiving, processing and transmitting elec- ‘none signals, is prepared, The base plate 1s provided on aa ‘upper surlace wih a plurality of hip-implanting areas 1, as shown in FIG. 2. The chip-implanting areas 11 ate first coated ‘witha layerofanadhesive material 12.A semiconductor chip 2s then attached to each ofthe chip-implantingareas 11 with ‘lower surface ofthe semiconductor chip 2 in contact with the adhesive material 12, as shown ia FIG, 3 0035} ‘The adhesive material 12 may comprise thermo~ plastic or thermosetting esa ike polyimide, epoxy resin, and foryl resin so on, Before curing these materials are sticky ‘upon heating. [0036] Alternatively, as shown in FIG. 4, the base plate 1 ‘may be replaced with a ase plate La, on which a plurality of chip-implanting ateas 11 are provided and a narrow through hole 111 forextending mal bonding wires is Formedon exch ofthe chip-implanting areas 1, The chip-implantng areas 11 fn the base plate 1a are first coated with layer ofthe adhe- sive material 12, and the semiconductor chip 2 is thea attached to each of the chip-implanting areas 11 with the lower surface ofthe semiconductor chip 2 in contact withthe adhesive material 12, [0037] Alternatively. instep 101, the chip-implanting areas 11 are oo fist coated with the adhesive material 12, Instead, the adhesive material 12 applied onthe lower surface oftheUS 2009/0124044 AI semiconductor chip 2, which is then attached to the chip- implanting area 11 othe baseplate 1, Ya 0038] - The subsequent steps 102-108 of the method ofthe present invention will now be described bases on the base plate 1. However, the steps 102-108 are also applicable tothe base plate ta 10029] Instep 102, apluraity of semiconductor chips2, 2a, 2b, 2c are attached fo and implanted in the chip-implanting ‘areas 11 of the base plate 1, as shown in FIG, §, and the base plate I withthe semiconductor chips 2, 2a, 2, 2c paced in a processing tank 4, as shown in FIG, 6, before the adhesive ‘material 12 bebween the semiconductor chips 2, 2a, 2b,2eand the surface of the base plate starts curing or Becomes fully cored [0040] As shown in FIG. 7, in te process of attaching the semieonductor chip 2 to the base plate 1 via the adhesive ‘material 12, thore are bubbles -g. 81, 82,53 in the adhesive layer 12, at aninterface between the adhesive layer Zand the baseplate I, and at an interface between the adhesive layer 12 ‘andthe semiconductor chip? respectively. These bubbles SI, 52, 53 would result in discontinuity in the surfaces of the ‘adhesive material 12, a8 shown in FIG. 8 [0041] In step 103. 0 solve the problem of bubbles 81, $2 53, the processing tank 4 having the base plate T with the semieonductor chips 2, 2a, 26, 2c placed therein is preset 10 heat ata predetermined heating rate to 8 predetermined tem- perature and to apply @ predetermined pressure fora given Period of ie, [0042] In step 104, under te preset physical conditions in the processing tank , the bubbles 8 inthe adkuesive layer 12 the bublles $2 at the interface between the adhesive layer 12 ‘and the base plate 1, and the bubbles §3 at the interface between the adhesive layer 12 and the semiconductor chip 2 ‘are expelled from the fringes ofthe adhesive layer 12 in the ‘directions as indicated by the arrows in FIG. 7. 0043) In step 108, 0 plate 1 withthe semiconductor chips?, 2a, 26, 2cistaken out Df the processing tank 4 [0048] According to step 106 ofthe method of the present Jnvention aflerstep 108, bonding pads 321, 322 are disposed ‘on an upper surface 31 of the semicondocior chip 3 and are ‘connected with bonding points 341, 342 disposed on the upper surfoce of the base plate I by metal wires 331, 332 through wire bonding. as shown in FIG. 9 [0045] In step 107, a packaging resin 6 is molded on the ‘upper surface 31 of the semiconductor chip ¥and the bonding wires 331, 332 using a mold (not shown) by vay of injection molding, shown in FIG. 10 10046) In step 108, the packaging resin 6 is subjected to postmokd eure ani becomes cured, The fully cured packaging resin 6 would hermetically contain the semiconductor chip 3 therein, protecting the semiconductor chip 3 aginst external humidity 10047] In the case of te base plate 1a having a semicon- ‘ductor chip 7sttached to an upper surface ofthe baseplate La Via the adhesive material 12, the step 106 is condicted as below: alter the bubbles are removed from theadhesive mate- Fial 12, bonding pads 721, 722 disposed on lower surface 71 ‘of the semiconductor chip 7 and bonding points 741, 742, sdisposedona wer surface the hase plate La are connected by metal wiros 731,782 though wire honing. Itisnoted the nical wires 73, 732 are extended through the through hole 11 to respectively connect the bonding pads 721, 722 with the bonding points 741, 742, a8 shown in FIG. 11. Therefler, May 14, 2009 instep 107, the Semiconductor ehip 7 and the bonding wires 731, 732 are encapsulated in a packaging resin 6a molded by \way of injection molding, as shown in FIG. 12, [0048] The method for removing bubbles from adhesive layer of semiconductor chip package according tothe present invention i also applicable to the packaging of wo or more stacked chips. When step 101-106 as shown in FIG, 1 have ‘been completed for a first semiconductor chip 3, steps 101-106 ean be repeated fr each ofthe following chips ta be sequentially stacked on the fist chip 3. [0049] Referring o FIG. 13, when the wire bonding has ‘been complete for de fst semiconductor chip 3 atacaed to the upper surface a the baseplate Ia socond semiconductor chip 8 having a layer of adhesive material 13 coated on @ lower surfice thereof is stacked on the fist semiconductor chip 3 withthe adhesive material 1 i contact withthe upper surlace 31 of the fist semiconductor chip 3 0 form a semi Tinished product, Then, the semi-finished product is placed the processing tank 4 for removing bubbles ftom the layer of adhesive material 13, [0050] After the bubbles are removed, bonding pads 821, ‘822 disposed on an upper surlace Blof the second semtioon. ‘ductor chip 8 and bonding points 841, 842 disposed on the upper surface of thebase plate 1 arerespectively connected by ‘ical vires 831,832 through wire bonding. Finally, the sem ‘sontductor chips ¥ an 8 an alte bonding wires are encap- sulated ina packaging resin 6 molded by way of injection ‘molting, shown in FIG. 13, [0081] Referring to FIG. 14 inthe ease ofthe baseplate La ‘having te semiconductor chip Tataehed tthe upper surface ‘of the base plate a via the adhesive material 12, when the wire boning has been completed forthe ist semiconductor chip 7, a scoand semiconductor chip 9 having a layer of adhesive material 13 coated on a lower surface thereat is Stacked on the first semiconductor chip 7 with the adhesive ‘material 13 in contact with an upper surfiee of the fist sem conductor chip 7 10 form a semi-finished product. Then the semi-finished product is placed inthe processing tank 4 for removing the hubbles from the layer of adhesive material 13. [052] -Afterthe bubbles have been removed from the layer ‘of adhesive material 13, the bonding pads 921,922 disposed ‘nan upper surface 91 of the second semicondoetor chip 9 ‘andthe bonding points 941, 942 disposed om the upper sur ace of the base plate 1a are connected by metal wites 981, 932. Thereafter, the stacked semiconductor chips 7,9 and al the bonding wires are encapsulated in a packaging resin 6 molded by way of injection molding. as shown in FIG. 14 [0053] _ALhough the present invention has been deseribed ‘ith reference to the prefered embodiments thereo, itis apparent o those skilled in the at that variety of modifica ‘ions and changes may be made without departing from the scapeot the present invention which isintendod tobe defined by the appended claims. Wiha is claimed is 1. method for removing bubbles from an adhesive layer ‘ofa semiconductor chip package, comprising the steps of (@) attaching at lest ane fist xemicondictor chip of an upper surface ofa base plate by the adhesive material; (b) placing the base plate withthe fist semiconductor chip ‘lth thereto in processing tank belore the adhesive material starts curing or becomes fully cured, (setting the processing tank to a predetermined tempera ture and a predetermined presse for a predetermined period of ime;US 2009/0124044 AI (expelling bubble inthe adhesive material, at an inter. face between theadhesive layerand the base plate. andat an interface berween the adhesive layer aad the fist ‘Semiconductor chip from a least one fringe ofthe adhe- sive material () taking out the base plate and the first semiconductor chip attached thereto from the processing tak: (9 costing a layer of the adhesive material on a lower ‘surfaces of at least one second semiconductor chip, and attaching the second semiconduct to an upper Surface ofthe irs semiconductor hip, soas to stack the Second semiconductor chip on the fist semiconductor chipand forma semi-finished product; placing the semi Tinished product in the processing tank: repeating the above steps (b) (€), and (d) 0 remove bubbles from the adhesive material coated on the lower surice of the second semiconductor chip: and then, taking out the ‘Semisfinished prodvet Irom the processing tak and (2) repeating the above step (1) to sequentially stack other ‘semiconductor chip onthe second semiconductor chip, May 14, 2009 2. The method as claimed in claim 1, wherein, in step (@), the predetermined temperature in the provessing tank is ranged between 80° C. and 175°C. ‘3. The method as claimed in claim 1, wherein, inthe step (©); the predetermined pressure in the processing tank is langer than 2 atmospheres, ‘4 The method a8 claimed in claim 1, wherein, inthe step (©) the predetcemined period ofimeis longer than S mints. '5. The method as claimed in claim I, frher comprising 3 step of wire bonding alter the stp (). 6. The method as claimed in claim 1, farther comprising 9 step of wire bonding aller the step (D. “7 Themethod.as claimedinclaims, farther comprising the {allowing steps aller the sep (2) () encapsulating chips ina packaging resin: and () treating the packaging resin by way of a curing process for hermetically containing chips in the cured packaging