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  • Irfs840 Irfs841 Irfs842 Irfs843

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    Maikel Borges Iglesias
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    © All Rights Reserved
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    6 views5 pages

    Irfs840 Irfs841 Irfs842 Irfs843

    Uploaded by

    Maikel Borges Iglesias

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 5
    SAMSUNG ELECTRONICS INC 67E D M® 7964242 0017389 SbS MESNGK N-CHANNEL IRFS840/841/842/843 POWER MOSFETS FEATURES ‘T0-220F ‘+ Lower Ros (ow) | * Improved inductive ruggedness | * Fast switching times | * Rugged polysilicon gate cell structure | * Lower input capacitance ‘+ Extended safe operating area i ‘+ Improved high temperature reliability | PRODUCT SUMMARY Part Number | Vos | Roston) i wrseso | soov | 05a | 45 tarseei | ssov | oasa | 45a warseaz2 | s0ov) 1.10 408 rrseaa | asov | 1.10 ABSOLUTE MAXIMUM RATINGS Characte Symbol | 1AFSea0 | IAFSeaT | IRFSOA2 | IRFSBAS | pace ute (3 tr | 3 | 3 2 eastern seen aN ooo ‘e Notes: (1) T=25°C 0 150°C (2) Pulse test: Pulse width 300s, Duty Cycles2% (3) Repetive rating. Pulse with limited by max. junction temperature (4) L=t4met, Veg=50V, Rg=25M. Starting Ty=25°C. «& SAMSUNG 282 Flectonics SAMSUNG ELECTRONICS INC 67E D MM 7964242 0017390 287 MESNGK N-CHANNEL IRFS840/841/842/843 POWER MOSFETS ELECTRICAL CHARACTERISTICS (125°C uniess otherwise spect} Symbol] Character wn] Tye [ wos uate] Test Condens Tran Sore Breakdown Vole [aor oreenia ovoe | nrsesoisez soo) — v | Vasu) | Gate Threshold Voltage 20) — | 40 | V_ | VosVes, lo=250uA | Tes | Gale Source Lesage Faward | — | — | 100] 0A | Vamzov lcs [Oxte Source Letage Roverso [=| = |-100| na |Vos=—20¥ | zao ae Vote Eran Cures”) — = | 950 | uk | Vou Rag Vox nse _ =| = [000 |“ | ves=0 shan. Rain, Tom 125° FT ndtte Bainowce Goret | Ve, Vea 10V | toon | FSBAO:B6: je}-]-ja | |S lierseszees [25 \ | Tere parsoave Grae” [| enstne 2) Resa | ESEAO.EH - lore] 02s iRFSe2869 ri tas | ee isi — 4 oa [ Forord Tanscondaine @) [40] 6.8 I Cus [how Coactance = fisial = [oF | vee-ov Com_[ Opal Cpucmes | — [ise | = [or vosasy om | Revere Turner Coporonee | — | 66 — | oF | t=1.06ne ‘eon Ton Doty Tne ‘aL ai be z cee u 5 Boss | Rise Time |—_2 { 35 nS _| (MOSFET switching times are essentially ical tor oars Tae | ca indnendon of opratngtnperanre) Fall Time —| 20 [Total Gate Charge (Gate-Source Pulse Gate-Drain) \ Vos=10V, lo=8A, Vos™0.8Max. Rating OQ | Gate Source Charge j = [62 93 [ne se ete ese coerce a < | erie tema 42 | 63 es Qa _| Gate-Drain ("Miler") Charge =| 22 | 32 | ne THERMAL RESISTANCE Rane | snore Case wax [ane | Kw | Mounting surface flat. Fecs | Case-e-Sink ° 5 A seeder m ° | ae ‘Smooth, and greased | Fue _| dunctonte-Ambient Max 20 OW | Free Ar Operation | Notes: (1) T)=25°G to 180°C {2} Pulge test: Pulse widths 300ys, Duty Cycle< 2% (3) Repettive rating: Pusse widtn Imited by max. juncton temperature SAMSUNG ts Bectonics SAMSUNG ELECTRONICS INC IRFS840/841/842/843 b7E D MM 7964242 003739) 113 MESNGK N-CHANNEL POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS yams] chester [win] | wae [or Test Coane Genre Souse Gurr be | (Body Died) | | IRFSB40/841 -|-| 8 A | Modified MOSFET integral | Pulse Source Current (3} } teil | LS |rarseazess ZI=| | Dose Fwd Vole | vo | rsesane -| =| 20 trsesarens == [is] La Reverse Recovery Time — 460] 970 Notes: (1) T)=25°C to 150°C {2) Pulse test: Pulse width

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