AMERICAN INTERNATIONAL UNIVERSITY – BANGLADESH

(AIUB)
Faculty of Engineering
Course/Lab Name: VLSI Circuit Design Section: D Term: Mid
Quiz: 01, D Course Outcome: CO1 Total Marks: 20 Marks Time: 30 Minutes

Student Name:

Student ID:   Department:

1. In a CMOS process, an nMOS has nominal threshold voltage , Vto = 0.38 V, doping level, NA =
1.8×1015 cm-3 , gate oxide thickness tox = 200×10-8 cm. Calculate Vt for the nMOS when
(i) Vg=5 V, Vd=6 V, Vs= 1 V, and Vb=0 V.
(ii) Vg=5 V, Vd=6 V, Vs= 1.5 V, and Vb=0 V.
(iii) Vg=5 V, Vd=6 V, Vs= 2 V, and Vb=0 V.
(iv) Vg=5 V, Vd=6 V, Vs= 2.5 V, and Vb=0 V.
You will choose appropriate values for other parameters if necessary. Also, comment on your findings.

2. Explain body effect, junction leakage, gate leakage of an nMOS transistor.