International Se zr] Rectifier IRF634 HEXFET® Power MOSFET © Dynamic dv/dt Rating © Repatitive Avalanche Rated > © Fast Switching Voss = 250V © Ease of Paralleling 1) © Simple Drive Requirements oA] a Rogqon) = 0-452 s Ip =8.1A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter Max. Units 10 @ Te = 25°C _| Continuous Drain Current, Vas @ 10 V 81 lp @ Tc= 100°C _| Continuous Drain Current, Ves @ 10 V 5A A fom Pulsed Drain Current © 32 Po @ Tc= 25°C _| Power Dissipation 74 Ww Linear Derating Factor 0.59 WC Ves Gate-to-Source Voltage 220 Vv Eas Single Pulse Avalanche Eneray © 300 md lan ‘Avalanche Current © 84 A Ean Repetitive Avalanche Energy © 74 md dvidt Peak Diode Recovery dvidt @ Z TD ‘Operating Junction and -85 t0 +150 Tsre____| Storage Temperature Range °c Soldering Temperature, for 10 seconds 300 (1.6mm from ease) ‘Mounting Torque, 6-32 or M3 screw 10 Ibfein (1.4. Nem) Thermal Resistance Parameter Typ. Max._| Units Rac ‘Junction-to-Case = = 17 Recs Case-to-Sink, Flat, Greased Surface = 0.50 = °c | Rasa Junetion-to-Ambient = = ei 4IRF634 TOR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. | Typ. | Max. [ Units Test Conditions: Veervoss | Dralnto-Source Breakdown Voltage | 250 | — | — | V_|Vas=0V, lo= 250A ‘AVienypse/AT,| Breakdown Voltage Temp. Coefficient | — | 0.37 | — | VPC | Reference to 25°C, lox imA Flosion ‘Static Drain-to-Source On-Resistance_| — | — | 045| @ [Ves=10V, o=5.1A © Vasen Gate Threshold Voltage 2.0 [= [40 [V_[Vos=Ves, lo= 250A Oe Forward Transconductance 46 [= T= TS [Vos=50V, o=5.1 @ = [= [35 ‘Vos=250V, Vas=0V loss Drain-to-Source Leakage Current po Ri soov Veco tees ae Gate-1o-Source Forward Leakage = |= a0, [ves=20v Gate-to-Source Reverse Leakage = | = F100 Ves=20V Os Total Gate Charge —{[=Ta 1o=5.6A Qags Gate-to-Source Charge. — | — | 65] nC | Vos=200v Qua Gate-to-Drain (‘Miller’) Charge — | — 7 2 Vas=10V See Fig. 6 and 13 @ ‘tony Turn-On Delay Time = [ss T= Voo=125V Rise Time = [ai T=] Ag |lo=5.68 Turn-Off Delay Time Te T— Ro=120 Fait Time 19 Ro=220 See Figure 10 bo Internal Drain Inductance —jas|— Samoan | nH | from package (E Ls Internal Source Inductance — | 75) -— and center of die contact i Cas Tnput Capacitance = [770 Ves=0V Coss ‘Output Capacitance = [490 [=] PF |Vos=25v Cas Reverse Transfer Capacitance = [se T= f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. [ Max. | Units Test Conditions: is Continuous Source Current Hee ee MOSFET symbol 9 (Body Diode) a. | Showing the oar em Pulsed Source Current Eee eee ae integral reverse N14 (Body Diode) © pn junction diode. Is Vso Diode Forward Voltage = [= [20 TV [11225°C, 168.14, Ves=0V @ te Reverse Recovery Time = | 220 [440 | ns_|Ts=25°O, 1-=5.68 Oe, Reverse Recovery Charge = 2 [24 Tuc |ait=t00a/us @ Ten Forward Turn-On Time Tnifnsic turn-on time is neglegible (tum-on is dominated by Ls+Lo) Notes: © Repetitive rating; pulse width limited by Isps8.1A, difdtst20A/us, VoosVieR)oss, max. junction temperature (See Figure 11) Tust50°C ® Voo=80V, starting Ty=25°O, L=7.amH Pulse width < 300 us; duty cycle <2%. Ro=: 25Q, lag=8.1A (See Figure 12) 210IRF634 Ip, Drain Current (Amps) |p, Drain Current (Amps) 4.59 ous PULSE WIDTH ic = 258C wt 100 wo Vps: Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25°C Pr i Vps = 50v oe 20us PULSE WIDTH| — eH Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics |p, Drain Current (Amps) ‘20uS PULSE WIDTH| To = 150°C 10 sot Vps, Drain-to-Source Voltage (volts) DATA SHEETS Fig 2. Typical Output Characteristics, To=150°C 3.0 ise] |)... 2s] 2.0) 1.5 (Normalized) 0.5] 11 Tag 7 i6v °S5p=4d 20-0 BO ad BO 80 100 420 140 160 Ty, Junction Temperature (°C) Ros(ony, Drain-to-Source On Resistance Fig 4. Normalized On-Resistance Vs. Temperature antIRF634 [Tear] 1799 20 Wes = OV, f= Ihe 7p 7 5on ies = Cos + gg Cys SHORTED z = oe ee 3 2 se Coss = Cds + Cga a Yo = 50¥. g i © ead Sr g Cass, g 3 cs) De 2 hf Sous 3 =a 6, a 7 SEE FIGURE 13 {00 oF ° 02030-4080 Vps, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 103) t a BY Fos (on) E B 103] é aa 4 5 10 & 10°} 2 . i: é $4 4 : id Veg = OV 7 Beare reared! al Ks di Kee Vsp, Source-to-Drain Voitage (volts) Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 212Ip, Drain Current (Amps) IRF634 Re 7: Voo ian Wath ty Buty Factor< 0.19% 4 P+ — = { NO Fig 10a. Switching Time Test Circuit T | ia | 0%. Co ! i i 1 ! i T \ I 4 10%: a e) Vos i To, Case Temperature (°C) Ykon) toon 4 Maximum Drain Current Vs. Case Temperature ‘Thermal Response (Zajc) SINGLE PULSE. (THERMAL RESPONSE) 107 io 107 fod Fig 10b. Switching Time Waveforms Tuy Peel ‘NOTES: 4. DUTY FACTOR, Ost1/t2 2. PEAK Ty=Fou x Ztnjc * Te 107 O41 1 10 th, Rectangular Pulse Duration (seconds) Fig 11. 213 Maximum Effective Transient Thermal Impedance, Junction-to-Case DATA SHEETSIRF634 TOR, Vary tp to obtain required tas 700 ip ne 3.6 Ste z 7 s0rTOM 8:34 = 300 8 3 soo Fig 12a. Unclamped Inductive Test Circuit 3 =e ® 7 2 (@ryoss ee — a y Yoo B00 oo ve i n= oe / \ 050050 / \ Starting Ty, Junction Temperature(*C) i hs — — — Perereeteireet Fig 12¢. Maximum Avalanche Energy i Fig 12b. Unclamped Inductive Waveforms. Vs. Drain Current ator | oUTE Py kh 4) 1 ' | lh pur. 7.¥os ie FY owe cera Sonsing Rees Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dvidt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing - See page 1509 Appendix C: Part Marking Information — See page 1516 Intemational Appendix E: Optional Leadtorms — See page 1525 er] Rectifi 214