Philips Semiconductors Silicon Diffused Power Transistor GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, te. QUICK REFERENCE DATA Product specification PHE13007 SYMBOL [PARAMETER ‘CONDITIONS Typ. [ MAX. | UNIT Collector-emitter voltage peak value ~ | 700} v Golector-Base voltage (open emt) 2 | foo | ¥ Golector-emitter volage (open base) 2 | a0 |v Emitter base voltage (yO) 2 |e] Golector current (OC) >] a fa Eoilecter current peak value |i] a _ Total power dissipation | a | w Vie | Colectoremiter saturation voltage 035 | 20] Vv Fall te a0 | 130 | ns PINNING - T0220AB PIN CONFIGURATION SYMBOL PIN | __ DESCRIPTION 5 c + [base f 2 collector l > d -~ 3 emitter tab |coiector (Vl e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL [PARAMETER ‘CONDITIONS Min. [ WAX. | UNIT Veear | Collector fo emitter volage Vee =0V ~ | 700 | v Collector to emitter voltage (open base) = | 400 | v Collector to base voltage (open emitter) 2 | 700 | v Emiler-base voltage (y= 0) DO] Golector curont (OC) tt] 3 | x Collector current peak value > fae] a Base current (OC) D/P] a Base current peak value a | A 2 Total pawer dissipation Tyo $25°C _ | | w | Storage temperature 5 | 150] ‘¢ t Suncton temperature = | 50 | 6 THERMAL RESISTANCES SYMBOL [PARAMETER (CONDITIONS. Typ. | MAX. [ UNIT Rams [Junction to mounting base 1.56 | KAW Rays _[Junetion to ambient ines ar oo | - [Kw February 1999 1 Rev 1.000Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 STATIC CHARACTERISTICS Typ = 25 ‘C unless otherwise specified SYMBOL [PARAMETER (CONDITIONS MIN. [ TYP. | MAX. | UNIT lees Collector cutoff current Veesvine - | - [| 02 | ma hoes (cesuinax - - 1.0 | mA leso Emitter cut-off current - 1.0 | ma Vecous | Collector-emitter sustaining voltage ao] 2} 2 ]ov Vcces __| Collector-emitter saturation voltage - Jors| 10 | v Ven 035 | 20] v View > Jost | 30] v Voex | Base-emitter saturation voltage 2.04; - }ooz| 12] v Veet BOA > | 105 | 16 | v aco BOA > | too | 15 | ov 00 tre DC current gain a | a7 | 40 Heat 5s | 8 | 30 DYNAMIC CHARACTERISTICS Typ = 25 °C unless otherwise specified SYMBOL [PARAMETER (CONDITIONS TYP. | MAX. | UNIT ‘Switching times (resistive load) [n= SACI A RUS 78 ohms; Vees= 4 V; & Tum-off storage time 18 | 30 | os fi Tum-off fall ime 03 | o7 | xs ‘Switching times (inductive load) n= 5A leg = 1A Lys 1 oH: BY & Tur-off storage time 12 | 20 | ss i Turn-off fall time 40_| 120 | ns ‘Switching times (inductive load) t Turn-off storage time 16 | 30 | xs u Turn-off fll time, 100 | 200 | ns 1 Measured with half sine-wave voltage (curve trace) February 1999 2 Rey 1.000Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE 13007 * on — a ws ‘oba0ie Horizontal e| Le tee Sree Cae . we { —— 300R 1k ws 3ns [ Fig.1. Test circuit for Vecowuse Fig.4. Switching times waveforms with resistive load. ‘om , a Fig.2, Osclloscope display for Verma Fig. Test cout inductive loa voe = 900 V; Vee = 5 V; Le = 200 UH; Lp = 1 uH = woo A vw & of — LZ te0n Fig, Test creut resistive load. Vy Fig8. Suiting times waveforms with inductive load Veg S200V., 206: 8b! eand Ri ealoulated fom kan and ln, Foqulroments February 1999 3 Rey 1.000Philips Semiconductors Silicon Diffused Power Transistor Product specification PHE13007 ‘0 fl mates Power Der 0 0 0 60 30 2 ° Be ee, Tao Fig.7__ Normalised power dissipation. PD% = 100-PDIPD as = F (Tra) Fig.10._Collector-Emitter saturation voltage. Solid lines = typ values, Vezsn = f(B); T=25 °C. Fig.8. Typical DC current gain. Pe parameter Vee Fig.11._Base-Emitter saturation voltage. Solid lines = typ values, Vacau = AIC); at (CIB =4. Fig.9.. Typical DC current gain. he parameter Voz Fig.12._Collector-Emitter saturation voltage. Solid lines = typ values, Vere AUC); at ICM =4. February 1999 Rey 1.000Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 zn K, "oso > ° : on 508 : =| 3 : a cb yt yr Fig.13. Transient thermal impedance. Fig.15. Reverse bias safe operating area (T, < Tenn) Zain = M(t): parameter D = t/T Tor Vgc = 5V,3V & 1V. Fig.14. Test circuit for reverse bias safe operating area, 150V: Vp = 5V,3V 8 1V: eH: Lo = 200cH. February 1999 Rey 1.000Philips Semiconductors Silicon Diffused Power Transistor Product specification PHE13007 MECHANICAL DATA Dimensions in mm 45 Not Mass: 2.9 max 10,3 - | ~ max 13 = mi 37— LL \ 28 4 | | i 15,8 ' max Y Yy 3,0 max 30 4 not tinned H ” ' Ad 13,5 oie min 130) max 12.13 Y (2x) J) Pi 0.9 max (3x) pl. 06 2,54 2,54 mie — 24 Fig.16, TO220A8; pin 2 connected to mounting base Notes 1. Refer to mounting instructions for T0220 envelopes, 2. Epoxy meets UL94 VO at 1/8" February 1999 Rey 1.000Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 DEFINITIONS Data sheet status Objective specification [This data sheet contains target or goal specifications for product development. Preliminary specification | This data sheet contains preliminary data, supplementary data may be published later. Product specification | This data sheet contains final product specifications. Limiting values: Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more ofthe imiing values may cause permanent damage tothe device, These are stress flings only and Gperation of the deviee at these oral any other conditions above those given inthe Characteristics sections of thes specication fs nol implied, Exposure fo imting elues for extended periods may affect device reliably Application information Where application information is given, itis advisory and does not form part of the specification. ¥ Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, itis believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS ‘These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale, February 1999 7 Rey 1.000