International Ter Rectifier Applications * Switch Mode Power Supply ( SMPS ) © Uninterruptable Power Supply © High speed power switching Benefits ‘* Low Gate Charge Qg results in Simple Drive Requirement ‘© Improved Gate, Avalanche and dynamic dvidt Ruggedness © Fully Characterized Capacitance and Avalanche Voltage and Current * Effective Coss specified (See AN 1001) Absolute Maximum Ratings SMPS MOSFET PD- 92004 IRF740A HEXFET® Power MOSFET Voss | Rds(on) max | Ip 400V 0.550 10A qos SDS Parameter Wax. Units ‘Continues Drain Curent, Vas @ TOV 70 Continuous Drain Curent. Vos @ 70V 33 A Pulsed Drain Current © 0 Power Dissipation 125 Ww Linear Derating Factor 10) wre Ves Gate-o-Source Valiege 23 Vv lave oak Diode Retovery ait @ 50 Wns Tr ‘Operating Junction and Bow Tere Storage Tempsrelure Range “c ‘Soldemng Temperature, tor 70 Seconds 00 Crema om casey Mounting Torae, 6-32 or Ni screw Orin TINT Typical SMPS Topologies: ‘© Single transistor Flyback Xfmr. Reset ‘Single Transistor Forward Xfmr. Reset ( Both for US Line Input only ) Notes ® through are on page 8 www.irf.com eit4i99RF740A International Tor Rectifier Static @ T, = 25°C (unless otherwise specified) Parameter iin. | Typ: Max. [Units] Conditions Visaass _| DrantoSoures Greakdown Vorege | <00 | — V_[ Wes = 015 = 2500 Necoss [Breakdown Votaga Temp Cooter | — [043 [— Viec_Reteranca to 75%, 1o= Tw Rosion) ‘Sialic Drain-to-Source On-Resistance | —- | — [055 [0 | Ves= 10V, Ip Vestn) | Gate Threshold Vakage 20 [=] 40 [Vv | vos= Ves lo == Ps Vos = 400V, Vos = OV loss Dram to Source Leakage Cure, =T= Pao &* Vos = 320V, Vas = OV, Ts = 125°C Gao. Source Ferward Leakage | — | — | 100] | Wes = 30 ‘ess (Gate-to-Source Reverse Leakag= —=T= Fro] Dynamic @ T, = 25°C (unless otherwise specified) rameter Min. Conaiions % Foard Tansconductanca 19 [— S| Wos= SOV = 604 Op Teal Gale Care == ip= 10a ‘Gq; | Gate-e-Source Cnarge [== [29 ne | vos = s20v Ogi ate-o-Dran Chiter Chae Se Vas = 10V, S00 Fig. 6and 13 © Tony | Tur-On Dolay Tao =e © Rise Te = [as ns ‘aan | Tutor Oatay Te Tas te Fea Time =z Ro=10.50.S00 Fa 10 Tiga Capaance Tass Ves = Ov Coxs| Oukpit Capactonce =[10 Gx | Reverse Transfer Capacitance = 7 oF | f= 0MHe, See Fe 5 Coss | Out Capacitance = Tag Vas 0V, Vos = 10V. = TOWRE Coss | Ouut Capacitance =a Ves = OV. Vos = S20V._ f= LOM Cars ff | Efecve Quin Capactance —=T[er Avalanche Characteristics Parameter Es Sigla PUGS Avalanche ENS a ‘valanene Curent Ea Repoive Avalanche Enemy Thermal Resistance Parameter Wp. Max. | Units ae Tuneteno-Case — 70 cs Cese-o-Snk, Fl Greased Sure Ta — “ow Rasa Junction t Ambient — 2 Diode Characteristics Parameter Tin) Te Max | Una Cenaitons s aninaous Source Curent —_T_T we MOSFET Smoot (ody Dede) a | sowing the iow Pulsed Source Current T integral reverse Body Diode) © =|-|* | pn junction diode. Veo Dodo Forward Votage =a te Reverse Recovery Tame [a0 | 360 | as Oe Reverse Recoveryonarge Te] 29 | uc Tee Forward Turi-On Time Trine on ie nate Murron & Goreated by Ls) 2 ‘www.irf.comInternational Tor Rectifier Ip, Drainte-Souroe Current (A) 5 20) PULSE WIDTH| 25°C oo of 7 10 \Vps + Drain-to-Source Vottage (V) Fig 1. Typical Output Characteristics Ip, Drainto-Source Cure Vos=50v 20ys PULSE WIOTH 40 50 a0 70-8080 Vos, Gate-o-Source Voltage (V) Fig 3. Typical Transfer Characteristics wwwirf.com 700 700 Ip, Drain-to-Source Current (A) Ros(on)« Drain-o-Source On Resistance a wal Bis IRF740A 205 PULSE WIDTH 4 ‘or t 0 700 Vos, DreirstoSource Voiage (V) Fig 2. Typical Output Characteristics Tr 08 oo Veg= 100 °a0 40-20 0 2 40 Oe 100,120 140 100 Ty, duneton Temperature (°C) Fig 4. Normalized On-Resistance Vs. TemperatureIRF740A International Tor Rectifier 120200 2 sR so2n0 arr) é 5 F sco 30 gm 3 x 1 FoR Test ciRcun| 1 © +00 ‘200 ° SeeriGuRE TD yan to-Souce Votage ® 70 20 0 ra Nos Sanesoueeyeee Q., Total Gate Charge (n@) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage "OPERATION IN [HIS AREA LIMITED. BY Rosin) [ut Nicos Ip, Drain Curent (A) q Ves OV Sno Pus oy oa 0s 0810124 0 100 1000 op Sourceto-Dran Votage (V) Vps. Drainso-Source Votage (¥) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www irf.comInternational Tor Rectifier v0 | 20 60 40 {p, Drain Current (A) 20 00. SS To, Case Temperature (°C) Fig 9, Maximum Drain Current Vs. Case Temperature 0 ‘Thermal Response (Zinc) 8 ‘000 007 760 IRF740A ‘Moo Fig 10a, Switching Time Test Circuit Yos. r aay Fig 10b. Switching Time Waveforms Duy O= t/t oF + 0 ty, Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case wwwirf.comIRF740A Fig 12b. |Unclamped Inductive Waveforms \. 5 “ tov tbe Ops ne Qgp —y vel / V Charge + Fig 13a, Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 niernational Tor Rectifier 409 p TOP 45a 63] BOTTOM 108 3 8 Ens » Single Pulse Avalanche Enevay (mJ) 2 280 or) Starting Ty, Junction Temperature (“C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current al Vosaw -Avolanche Votage (Y) “0 lay -Avatancne Curen (A) Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current www irf.comInternational IRF740A Tor Rectifier Peak Diode Recovery dvidt Test Circuit t—<+ circuit Layout Considerations pur > * Low Stay inductance ma) 0 See + Low Leakage inductance Current Transformer —~ > yw p— Lawl. 2 Es x pe ILD) ovat centsoted by Dnver same ype a5 BUT Vo gg conoid by Duy Factor "O° + DUT = Dowoo Under Test © oer Gate ve = Pw. a ped v= 4B VoertOV * ‘6 es [our igg woven Reverse V Bacon |\V/ By Date Fond eSay tenes @ our veg Wareirn ote Recover : oS The BecArpies 7 oo L vain sey Dae Foner O00 * Vas = 5Vfor Logic Level Devices wwwirf.com Fig 14, For N-Channel HEXFETSIRF740A Package Outline To-220A8 Outine Dimensions are shown in millimeters (inches) Part Marking Information yo.220a8, ErAWPLE® THIS 18 aN REID Vite aedevbee a Notes: © Repetitive rating: pulse wit ited by ‘max. junoton temperature. ( See ig. 11) © Staring T)= 25°C, L= 12.6mH Rg= 250. 1a5= 10A. (Soe Figuie 12) © leo $ 100, dict 3308s, Voo S Ventas, Tys 180°C INTERNATIONAL RECTIFIER NY International Tor Rectifier too assematy Lot cope O 4} pass wees baz 4 PS DATE CODE Ws ww = WeeK © Pulse wiatn< 30045; duty eyclo < 236 © Coss of i a fixed capacitance that gives the same charging time £28 Cass thle Vos rising from Do 80% Vss International TaR Rectifier WORLD HEADQUARTERS: 233 Kansas St. El Segundo, California 90245, Tel (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9B, UK Tel ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontano L6T322, Tel (905) 453-2200, IR GERMANY: Seaturgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IRITALY: Via Liguria 49, 10071 Borgero, Tonno Tel ++ 39 11 451.0117 IR FAR EAST: KSH Bldg, 2F, 30-4 Nishiikebukuro 3-Chome, Toshime-Ku, Tokyo Japan 171 Tet 81 3.3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Grest Word Cy West Tower, 13-11, Singepore 297934 Tet ++ 65 838 4690 IR TAIWAN:16 FI. Sute D. 207, Sec. 2, Tun Haw South Road, Taine), 10673, Taiwan Te! 886-2-2377-9036 tp: it com’ 8 Data and specications subject to change wrinout note. 999 ‘www.irf.com