International TeR Rectifier SMPS MOSFET PD- 939044, IRFB23N20D IRFS23N20D IRFSL23N20D HEXFET® Power MOSFET Applications Voss | Ros(on max | Ip «High frequency DC-DC converters soy Moa San Benefits «Low Gate-to-Drain Charge to Reduce Switching Losses: # Fully Characterized Capacitance Including Effective Cogs to Simplify Design, (See \ App. Note AN1001) YN « Fully Characterized Avalanche Voltage and Current Toz2048 Pak To-262 IRFB2IN20D _IRFSZ3N200 _RFSL2aNZO Absolute Maximum Ratings Parameter ax Tats i @Te= °C caranaaas bran con Ves 2 ig @ Te= 100°C | Contnvous Dram Cure. Vas @ 707 7 A ow Fised Gren Curr os Po @TA=aSC_|_ Power Osspaton 7 38 w Po@Te=25C_| Pover Dsipsbon 70 Teer Drang Facer 1 WE ves Geieto Source Votege = Vv aca oak Diode Rosner ava a3 in i Operating Jonson and 0+ WE sre Storage Tempers Range Ps sce Terpeche fr 10 SSRs 5 Te FSET our To. 692 or SaeW OTE (1 Nem Typical SMPS Topologies ‘« Telecom 48V input Forward Converter Notas © through ® are on page 11 www.irf.comIRFB/IRFS/IRFSL23N20D International Static @ T, = 25°C (unless otherwise specified) Tor Rectifier Parameter Win. Typ, Max. [Unis Cenations Vienass | brane Sau Breakdown Vatage—| 200 | —|—|_v_| Vos=0Vi l= 250uA “HfeeesT | reaidoun Votage Temp Cooraent_|— Retevones 10 25°C, p= TAS Ross Slaie Drain1o Source On Resstanos | — OV, 10 Vestn) | Gate Threshold Vakage aa Vis = Ves = 200, Ves = tess | Dranio Source Lackago Curent = za Ye : Gao. Sourea Forward Leakage | — Vos =30V ‘ess Gate-to-Source Reverse Leakag= — OV Dynamic @ T, = 25°C (unless otherwise s| Parameter Min. | Typ] Max. [Unita oe Fonvard Tenscondvetance 3 [—|—| § |Wos=Sb a Tota Galo Chae Tare aR a: Gato to Source Charge ef 2r | ne | vos = 60v Ops | Gaketo-Drn (Wier) Cage = arpa sw, @8 ‘aon | Tun-On Delay Time ==] vo = 10007 t Rise Tina = [32 =] 4, | t= A ‘on, | Tue-Off Dolay Tne — [26 [—] ™ | Ro=490 % Fal Tine ST =1__|ves=10v_ © ‘Gay | lu Capastanes = [reso] =] Ves = 07 ‘ass Output Capacitance Ts] _ | vos=25v Tax | Reverse Transtar Canactanon Tet] oF | p= tone Coes | Output Capacitance [a0] — | | Wes= ov, Vog= Tov f= Tone ‘Goes | Output Capsctance —t—] [Wes ev f= LOM Cons of | Efecive Outnut Canactanes [220] =] [Wes = OV, Vos = OV 0 1007S Avalanche Characteristics Parameter We. Max, | Units Es ‘Sale Puke Avalanane EneaVO® = 250 md ise ‘Avalanche Curent = 1 B Esa Repative Avalanche Emery) = a7 ind Thermal Resistance Parameter We. Max. | Units Fa Tanaion to Case — 300 Recs ‘Case-t0-Sink, Flat, Greased Surface @ 050 = “ow Fan Tinto Arent @ oN uneren Ameen 2 Diode Characteristics Parameter iin | ye] Wax. [ Unit Conditions 5 Conic Sees Caren — |] 20 MOSFET symbol (oy D000) y | stowng the Toe Pulsed Source Carat =e integtl reverse (Soy Diode) © pen juncton dod Veg Dose Ferwara Vokage Ts = 286, = HA Vege Te Ravaise Recovery Tena — [eo a00 | as = 25 = AR Ger Reverse Recoven/Charge [Tso FATT ne | ae = 100A & ey Foner Turmtn Tene Tris eon ns gil (arn «Sons By Usa) ‘WwW.irf.comInternational IRFB/IRFS/IRFSL23N20D Tor Rectifier z z 0 rl 3 c 4 g 2 Bo é 6 6 20s PULSE WOT 20s PULSE WIDTH sez ays a ‘or * “0 “co ‘of 7 0 700 Vps, Drainto-Source Vatiage (V) Vs. Draindo-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics a a Ss Be 20 ge Ew = oes vos: z iirtisewom] — 2 Wes=0¥ a geal 20 020 a 80 0 100 Ta ad 160 0 Ves, Gatero-Souce Votage (V) 7, duneon Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature wwwirf.com 3IRFB/IRFS/IRFSL23N20D International ToR Rectifier 1 0 eno SS am TI a = 6 ‘0 =e & Bom 3 2 3 & a? $00 a gs FoR Test cimcutT| 0 ° SEE FIGURE 2 1 0 109 +000 00 Vps. Dino Source Vatape (7) Q,. Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gale-to-Source Voltage 1 {OPERATION IN THIS AREA LIMITEL = Roster < ® 38 : é 8 30 8 Vp Sauces.bran Votan (V) ps, bromo Vata) Fig 7. Typical Source Drain Diode Fig 8. Maximum Sete Operting Area FonvaraVatage 4 www irf.comInternational IRFB/IRFS/IRFSL23N20D Tor Rectifier 2 ‘Moo rie © Dp ww Pus antes Danroceezo tS 0 = Fig 10a, Switching Time Test Circuit 8 5 %os. rf x \ w x . t a /\ \/I “ig, Case Temperate (°0) \ Xt ae 7 te 4 Fig 9, Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms LJ ‘Thermal Response (Z nyc ) Bnsie ruse 4 IHenarRessonce = ees Foam it» 2 Peat s=P owt Zoe “To "Soom com coor oot a 1 ty, Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case wwwirf.com 5IRFB/IRFS/IRFSL23N20D International Fig 12b. Unclamped Inductive Waveforms a + tov + Qs Oso — Vo / charge = Fig 13a. Basic Gate Charge Waveform Tor Rectifier 00 = D 2 Top 50a) Em 108 pRven 3 BOTTOM _ AA] aes 5 soo "Yoo 3 3m 4 x0 & 100 a 27S) Staring Ty, Juneton Temperature (“C) Fig 12c, Maximum Avalanche Energy Vs. Drain Current Fig 13b. Gate Charge Test Circuit www irf.comIRFB/IRFS/IRFSL23N20D International Tor Rectifier Peak Diode Recovery dvidt Test Circuit T—<* Cult Layout Considerations * Low Stray Inductance out ¥) + Groune Plano « P+ Low Leakaye Inductance (Current Transformer L, Hs p— Lawl. o Es ASD) sesconnonine de + lp controled by Duty Factor "D* + DUT. - Device Under Test © oer Gate ve ew ew fered Pod VoertOV * ‘6 es ® [our tgp woven Revere Rao Boxy Dios Fears sly temas V @ our veg Wareirn : ote Recover : ont 1, geaggies |! a Le Vote sey Dae Foner O00 Inductor Cree . a Rerle = * Vas = 5Vfor Logic Level Devices Fig 14, For N-Channel HEXFET® Power MOSFETs wwwirf.comIRFB/IRFS/IRFSL23N20D TO-220AB Package Outline Dimensions are shown in milimeters (inches) 9-7 mots eo pe tae reas) 8 HES ' | ace we WA | I | saute) Te BE notes 2 CONTROLLNG DNENSIDN: NCH International Tor Rectifier RTE GATE 2.0RAN en sso asain) mel ta] 4 HEATSNK & LEAD MEASUREMENTS DO NOT ACLUDE BURRS TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 WITH ASSEWBLY lor cope sem ternational | OQ) part numaer RECTIFIER a \ [rian Loo TORS246 ~ DATE cone ASSEMBLY wn LoT cope EAR WEEK Ti www.irf.comInternational IRFB/IRFS/IRFSL23N20D Tor Rectifier D2Pak Package Outline 5 SSM tsa, 4g 140 (055) ama cieey 132(082) — wey es | sheep, ro |) eae o L ae ry sage FET Lec i Date J 232091) ge taeioee) 139 055) aay) 3x Gastar, a6 (08) La25 (01) We) Minndut RECOMMENDED FOOTPRINT ae notes Leapassionuents 6890350) fo D?Pak Part Marking Information INTERNATIONAL RECTIFIER < Loco, / PART NUMBER ~~ DATE cove ASSEMBLY ~ yw) LoT cope YY = YEAR ww = Week wwwirf.com 9IRFB/IRFS/IRFSL23N20D International Tor Rectifier TO-262 Package Outline 0.8 08] secon f) Soo Lies} TS [sats —_———| Nett 31 (2001 te o0n) | c=] f] fl ssontess) |) | acetsee, Selso |] Sesto il} Ht | 149055) | % oaetare) “T isto | || esaroon naan rexramy)~) Samia PEO~ ~ proseraer OE 1. DMENSIONNG &TOLERANGRG PER ANG! Yi4eui802 oe 12 CONTROLLING DIMENSION: INCH. tecire = sounce 2 DMENSING AME SHOWN IM MLLMETERS [KES “4 HEATSINE & LEAD OWMENSIONS D0 NOT INCLUDE BURRS. TO-262 Part Marking Information SAMPLE: THIS IS AN IRLSTO3L ae oe nas INTERNATIONAL PART NUMBER cont RECTIFIER ASSEMBLED ON WW 19, 1997 cm TRLSTOL| IN THE ASSEMBLY LINE °C" yom 712c|—_ DATE CODE: 799 yo YEAR 1 = 1997 Lor cone WEEK 19 LINE © www irf.comInternational IRFB/IRFS/IRFSL23N20D Tor Rectifier D?Pak Tape & Reel Information \Ey) sia ee + NI + | eommeeno © Repetitive rating: pulse width ited by © Pulse with < 3004s; duty cycle 2%, max, juneion temperature © Starting T)= 25°C, L =26mH © Guay ef is a fced capacitance that gives the same charging time R= 250. las= 144, 25 Cogs while Vos ring fom 0 to 80% Voss © Igo 14A, dict $ 1308s, VooS Vesniss, _@ This is only appl to TO-220A8 packago Tyst78C © This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material). For recommended footarint nd soldering techniques reer to application note #AN-004 International TeR Rectifier IRWORLD HEADQUARTERS: 229 Kansas St, £1 Sogund, Calfomia 00245, USA Tol. (910) 252-7108 IR EUROPEAN REGIONAL CENTER: 439/445 Godsione Re, Wyteleate, Surrey CRS OBL, UK Tel +> 48 (0)20 8645 8000 IR CANADA: 15 Licoin Cour, Brampton, Ontario LST3Z2, Tel (905) 453 2200, IR GERMANY: Saalburgstasse 157’ 61250 Bad Hombulg Ta ++ 40 (0)6172 96590 IRITALY: Vis Liguis 49, 10071 Borgaro, Torito Tel += 38 011 451 0111, IR JAPAN: KH Bldg. 2F, 30-4 Nishitkebukuro 3.Chome, Toshima:Ku, Tokyo 171 Tel: 81 (0}3 3083 0086 IR SOUTHEASTASIA: 1 Kim Seng Promerare, eat Word Cy West Tower 13-11, Singapore 23790 Tel +r 65 ()538 4520 IR TAIWAN:16 FI Sute D.207, Sec. 2, Tun Haw South Reed, Tapet 10673 Tet 886-(02 2377 8836 Data and speciteavons Sunoco change wit notice. 400 wwwirf.com 1