UNIVERSIDAD INDUSTRIAL DE SANTANDER

ESCUELA DE INGENIERÍAS ELÉCTRICA,

ELECTRÓNICA Y TELECOMUNICACIONES

Parcial 1. Dispositivos Electrónicos 2017-1

1. (1.25/5) Single choice questions.

1.1 (0.25/1.25) How the intrinsic concentration (ni) would change if

temperature increases from room temperature to 300 Celsius?
a. About the same
b. A little more
c. A lot more
d. A little less
e. A lot less

1.2 (0.5/1.25) A measurement of the reverse current (leakage) of a diode (-Is)

at room temperature is around 1nA. What would happen to the leakage if the
temperature increases to 90 Celsius?
a. Increase a little
b. Increase a lot more than 10 times
c. Decrease a little
d. Decrease about 10 times
e. Decrease a lot more than 10 times

1.3 (0.5/1.25) When you forward bias a particular diode at 700mV you
measure a current of 1mA. What bias voltage is needed to achieve a current of
2.7mA? What bias voltage is needed to achieve a current of 10mA?
2. (1.25/5) For a Si conductor of length 5 μm, doped n-type at 𝟏𝟎𝟏𝟓
𝒄𝒎−𝟑 , calculate the current density for an applied voltage of 2.5 V
across its length. How about for a voltage of 2500 V? The electron
and hole mobilities are 1500 𝒄𝒎𝟐 /V-s and 500 𝒄𝒎𝟐 /V-s,
respectively, in the ohmic region for electric fields below 𝟏𝟎𝟒 V/cm.
For higher fields, electrons and holes have a saturation velocity of
𝟏𝟎𝟕 cm/s.
3. (1.25/5) In an n-type semiconductor bar, there is an increase in
electron concentration from left to right and an electric field
pointing to the left. With a suitable sketch, indicate the directions of
the electron drift and diffusion current flow and explain why. If we
double the electron concentration everywhere, what happens to the
diffusion and drift current? If we add a concentration of electrons
everywhere, what happens to the drift and diffusion currents?
Explain your answers with appropriate equations.
4. (1.25/5) Obtain an expression for the ripple voltage 𝑽𝒓 of the circuit
presented in Figure 1 with an input square wave with instantaneous
rise time and fall time and period T. Assume the constant drop
voltage diode model (𝑽𝑫_𝒐𝒏 ).

Figure 1.