Professional Documents
Culture Documents
Mach Dien Tu Thong Tin Trinh Xuan Dung Chapter 4 RF Oscillators and Frequency Synthesizers (Cuuduongthancong - Com)
Mach Dien Tu Thong Tin Trinh Xuan Dung Chapter 4 RF Oscillators and Frequency Synthesizers (Cuuduongthancong - Com)
Chapter 4
RF Oscillators and Frequency
om
Synthesizers
.c
ng
co
an
th
o ng
du
Department of Telecommunications
Faculty of Electrical and Electronics Engineering
Ho Chi Minh city University of Technology
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 1
Dung Trinh, PhD HCMUT / 2019
Contents
om
.c
1. Introduction
ng
2. LC Oscillators
co
an
3. RC Oscillators
th
4. Crystal Oscillator ng
5. Voltage Controlled Oscillator and Phase Locked Loop
o
du
6. Exercises
u
cu
1. Introduction
Oscillators convert a DC input (the supply voltage) into an AC RF
om
output (the waveform), which can have a wide range of different
wave shapes and frequencies.
.c
Oscillators are used in a number of applications in which a reference tone is required.
ng
For instance, they can be used as the clock for digital circuits or as the source of the
co
LO signal in transmitters.
In receivers, oscillator waveforms are used as the reference frequency to mix down
an
the received RF to an IF or to baseband. In most RF applications, sinusoidal
th
references with a high degree of spectral purity (low phase noise) are required.
ng
Communications systems, digital systems (including computers), and test equipment
o
make use of oscillators.
du
u
cu
1. Introduction
Classification of sinusoidal Oscillators:
om
RC Oscillators: Wien Oscillator, Phase Shift Oscillator.
•
.c
Use a resistance-capacitance network to determine the oscillator frequency.
• Suitable for low and moderate frequency applications (5Hz to 1MHz).
ng
LC Oscillators: Colpitts, Hartley Oscillator.
co
• Use a inductance-capacitance network to determine the oscillator frequency.
an
• Suitable for radio frequency (1 to 500MHz) applications.
th
Crystal Oscillators: ng
• Use piezoelectric crystal (or quartz) which has very high degree of stability
o
and accuracy. Suitable for radio frequency applications.
du
om
which an initially small excitation or disturbance produces an output that grows in
time due to constructive, or positive, feedback.
.c
We have:
ng
𝑉𝜀 (𝑠) = 𝑉𝑖 (𝑠) + 𝛽(𝑠)𝑉𝑜 (𝑠)
𝑉0 (𝑠) = 𝐴(𝑠)𝑉𝜀 (𝑠)
co
Then:
an
𝑉𝑜 (𝑠) 𝐴(𝑠)
𝐴𝑓 𝑠 = =
th
𝑉𝑖 (𝑠) 1 − 𝛽 𝑠 𝐴(𝑠)
ng
where T(s) = 𝛽 𝑠 𝐴(𝑠) is known as open loop gain or sometimes shortened to loop gain.
o
Replace 𝑠 with 𝑗𝜔:
du
𝐴(𝑗𝜔)
𝐴𝑓 𝑗𝜔 =
u
1 − 𝑇(𝑗𝜔)
cu
om
the output at the point where the loop was opened ( 𝑓 𝑉𝑖).
Suppose that the loop gain is equal to 1 at some frequency 𝜔0 , 𝑇 𝜔0 = 1. Then the
.c
voltage transfer function is singular (infinite) which can be interpreted as finite output
ng
for zero input.
co
In other words, the circuit is a potential source of radio frequency energy at the
frequency where the loop gain is 1, even in the absence of any input excitation 𝑉𝑖 .
an
Condition for the feedback loop to provide sinusoidal oscillations of frequency 𝜔0
th
(Barkhausen Criterion) is
ng
• At 𝜔0 the phase of the loop gain should be zero arg 𝑇(𝜔0 ) = 0.
o
𝑇(𝜔0 ) = 1.
u
cu
om
stages.
.c
ng
co
an
th
ng
At At high frequencies, C1
o
At low frequencies, L1 the resonant
du
𝑉𝑖𝑛 𝑉𝑖𝑛
𝑉𝑜𝑢𝑡
•
𝑉𝑜𝑢𝑡
is very small and • The phase shift from the • dimished and
𝑉𝑖𝑛 𝑉𝑖𝑛
input to the output is 𝑉
𝑉
∠ 𝑉𝑜𝑢𝑡 ≃ −900 𝑉 ∠ 𝑉𝑜𝑢𝑡 ≃ 900
𝑖𝑛 ∠ 𝑉𝑜𝑢𝑡 = 1800 𝑖𝑛
𝑖𝑛
om
We simply need to increase the phase shift to 3600.
.c
ng
co
an
th
o ng
du
u
cu
Wave form is shown above (right). A unique attribute of inductive loads is that they
can provide peak voltages above the supply. The growth of VX and VY ceases when
M1 and M2 enter the triode region for part of the period, reducing the loop gain.
om
frequency of oscillation, 𝜔0 . Then the condition 𝑇(𝜔0 ) = 1 is applied to determine
the gain of amplifier.
.c
For practical designs, the amplifier gain is set to a value somewhat higher than the
ng
value determined by above equation to ensure that oscillations will reliably start and
grow when the circuit is powered up.
co
Circuits with the topology shown in following figure are commonly employed as
an
oscillators. The active device could be a BJT or an FET.
th
o ng
du
u
cu
om
external impedances 𝑍1 , 𝑍2 , 𝑍3 .
To find the open loop gain of this circuit, we break the loop at a convenient point and
.c
terminate that point in the impedance that it sees when the loop is closed.
ng
The termination is required so that the open-loop circuit operates under the same
co
conditions as when the loop is closed. The loop gain is computed by exciting the
circuit at the input to the opened loop and computing the output across 𝑍1:
an
𝑉 𝑍 𝑍 +𝑍
𝐴 = 𝑉 𝑜 = −𝑔𝑚 𝑍2 𝑍1 + 𝑍3 = −𝑔𝑚 𝑍2 +𝑍1 +𝑍3
th
𝑖𝑛 ng 1 2 3
𝑉𝑓 𝑍1
𝛽= =𝑍
𝑉𝑜 1 +𝑍3
o
𝑉𝑓
du
𝑉𝑜𝑢𝑡 𝑍1 𝑍2
𝑇=𝑉 = = 𝐴𝛽 = −𝑔𝑚 𝑍
𝑖𝑛 𝑉𝑖𝑛 1 +𝑍2 +𝑍3
u
cu
om
𝑗𝑋2 . We allow 𝑍3 to have a non-zero (positive) real part. Then:
𝑔𝑚 𝑋1 𝑋2
𝑇=
.c
𝑗(𝑋1 + 𝑋2 ) + 𝑍3
ng
For oscillation to occur, the phase angle of 𝑇 must be zero at some frequency. Now
there are two possibilities for the signs of 𝑋1 and 𝑋2 :
co
• 𝑋1 > 0 (inductor), 𝑋2 > 0 (inductor): Hartley Oscillator
an
• 𝑋1 < 0 (capacitor), 𝑋2 < 0 (capacitor): Colpitts Oscillator
th
The frequency of oscillation is easily found by finding the frequency where the phase
ng
angle of 𝑍𝑠 = 𝑗 𝑋1 + 𝑋2 + 𝑍3 = 0. This leads to
o
1 1
• Colpitts: 𝜔0 =
du
Hartley: 𝜔0 =
𝐶 𝐶
𝐿𝐶 1+𝐶2 𝐶(𝐿1 +𝐿2 )
1 2
u
cu
om
circuit. A lossless circuit will oscillate indefinitely at the resonant frequency once it is
initially excited.
.c
When 𝑍3 is lossy, then the oscillations cannot be maintained unless the transistor is
ng
added to make up for the losses.
So far we have considered only half of the Barkhausen criterion (arg[𝑇] = 0). The
co
results yielded the potential frequency of oscillation. For oscillations to occur, the
an
gain of the transistor must be large enough to make 𝑇 = 1 𝜔=𝜔0 . This leads to:
th
𝑔𝑚 𝑅 𝐶1 +𝐶2
• Colpitts: = 1 → 𝑔𝑚 = 𝑅𝜔02 𝐶1 𝐶2 = .
𝑅𝜔02 𝐶1 𝐶2
ng
𝐿
𝑔𝑚 𝜔02 𝐿1 𝐿2 𝑅 𝑅𝐶 𝐿1 +𝐿2
o
• Hartley: = 1 → 𝑔𝑚 = 𝜔2 𝐿 = .
du
𝑅 0 1 𝐿2 𝐿1 𝐿2
The values of 𝑔𝑚 obtained in above equations are the values necessary for the circuit
u
om
rather, they will grow in amplitude. Growth will proceed until the active device is no
.c
longer operating in the “small-signal” mode.
ng
As the oscillation grows, eventually the amplitude of the oscillation will be limited by
nonlinear effects. To first order, the onset of nonlinear operation coincides with a
co
reduction in the gain of the active device.
an
This is called gain saturation, and the effect can be modeled as a decrease in the
th
transconductance, 𝑔𝑚 , and hence a decrease in the loop gain.
ng
As the amplitude of the oscillation grows, the transconductance is decreased to the
point where the magnitude of the loop gain is 1. At this point steady-state oscillation
o
du
will be maintained.
u
cu
om
𝑔𝑚 𝑉𝑖𝑛 + + =0
𝑍2 𝑍1
.c
𝑍1 +𝑍3
where 𝑉𝑜 = 𝑉𝑖𝑛 . Replace 𝑉𝑜 in the above equation, then:
𝑍1
ng
𝑉𝑖𝑛 𝑍1 + 𝑍3 𝑉𝑖𝑛
co
𝑔𝑚 𝑉𝑖𝑛 + + =0
𝑍2 𝑍1 𝑍1
an
1 1 𝑍3 Oscillator circuit
→ 𝑉𝑖𝑛 𝑔𝑚 + + + =0
th
𝑍1 𝑍2 𝑍1 𝑍2
For oscillation, 𝑉𝑖𝑛 must not be zero, therefore it enforces:
ng
1 1 𝑍3
o
𝑔𝑚 + + + =0
du
𝑍1 𝑍2 𝑍1 𝑍2
1 1
For Colpitts oscillator, 𝑍1 = 𝑗𝜔𝐶 , 𝑍2 = 𝑗𝜔𝐶 , and 𝑍3 = 𝑅 + 𝑗𝜔𝐿3 , then:
u
cu
1 2
1
𝜔0 = 𝐶 𝐶
𝐿𝐶 1+𝐶2
1 2
𝑅 𝐶1 + 𝐶2
𝑔𝑚 = 𝑅𝜔02 𝐶1 𝐶2 =
𝐿
Colpitts Oscillator
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 14
Dung Trinh, PhD HCMUT / 2019
om
1
𝜔0 =
.c
𝐶(𝐿1 +𝐿2 )
𝑅 𝑅𝐶 𝐿1 + 𝐿2
𝑔𝑚 = 2 =
ng
𝜔0 𝐿1 𝐿2 𝐿1 𝐿2
co
Hartley Oscillator Colpitts Oscillator
an
Example 1: For the Colpitts oscillator in following figure, assume parameters of 𝐿 =
th
1𝜇𝐻 , 𝐶1 = 𝐶2 = 1𝑛𝐹 and 𝑅 = 4𝑘Ω. Determine the oscillator frequency and the
ng
required value of 𝑔𝑚 . Is this value of 𝑔𝑚 reasonable for a MOSFET? Why?
o
Solution:
du
1 1
𝑓0 = = = 7.12𝑀𝐻𝑧.
u
𝐶 𝐶 10−9 ×10−9
2𝜋 𝐿𝐶 1+𝐶2 10−6 × −9
cu
2𝜋
1 2 10 +10−9
𝐶2 10−9
𝑔𝑚 = = = 0.25𝑚𝐴/𝑉.
𝑅𝐶1 4×103 ×10−9
Equivalent circuit
om
Consider a circuit consisting of arbitrary impedances 𝑍𝐴 and 𝑍𝐵 , as shown in the
.c
following figure. The Kirchoff’s loop equation is I 𝑍𝐴 + 𝑍𝐵 = 0. Hence, finite
current I is allowed if 𝑍𝐴 + 𝑍𝐵 = 0.
ng
It is instructive to analyze the oscillator circuit using this approach. Suppose that the
co
circuit is divided into two parts, by defining 𝑍𝐴 = 𝑍1 .
an
The impedance 𝑍𝐵 is the impedance seen looking into the port defined by the base
th
and emitter terminals of the transistor, with 𝑍1 removed from the circuit.
Applying KCL at the input and output, we have:
ng
𝑣𝑥 − 𝑣𝑜 𝑣𝑜
o
𝑖𝑥 = = 𝑔𝑚 𝑣𝑥 +
𝑍3 𝑍3
du
𝑣𝑥 𝑍2 + 𝑍3
→ 𝑍𝐵 = =
u
𝑖𝑥 1 + 𝑔𝑚 𝑍2
cu
Enforcing 𝑍𝐴 + 𝑍𝐵 = 0 yields
𝑍2 + 𝑍3
𝑍1 + =0 Impedance of oscillator circuit
1 + 𝑔𝑚 𝑍2
𝑍1 𝑍2
→ −𝑔𝑚 =1
𝑍1 + 𝑍2 + 𝑍3
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 16
Dung Trinh, PhD HCMUT / 2019
om
(𝐿1 = 𝐿2 = 0.5𝑚𝐻), are design to resonate in parallel with a variable capacitor that can
.c
be varied from 100pF to 500pF. Determine the upper and lower frequencies of
oscillation and also the Hartley oscillators bandwidth.
ng
Solution:
co
The upper frequency of oscillation:
an
1 1
𝑓𝐻 = = = 503 (𝑘𝐻𝑧)
th
−3 −3
2𝜋 𝐿1 + 𝐿2 𝐶1 2𝜋 0.5 × 10 + 0.5 × 10 100 × 10
ng−12
−3 −3
2𝜋 𝐿1 + 𝐿2 𝐶2 2𝜋 0.5 × 10 + 0.5 × 10 500 × 10 −12
u
om
connected in series so that the net capacitance of the tank circuit is reduced. And
1 𝐿
.c
thereby quality factor 𝑄 = 𝑅 of the tank circuit increases hence Colpitts has better
𝐶
ng
frequency stability when compared to Hartley oscillator.
co
Hartley Oscillator Colpitts Oscillator
an
Hartley oscillator uses a tapped coil for It is easier to tap 2 capacitors in series as
th
the feedback for oscillation, and these well as being cheaper than to use a
tend to be more difficult to make. tapped coil for feedback purpose.
ng
Capacitive tuning hence offers very low Circuit is economical and small in size due
o
wear and tear problem. to requirement of one inductor.
du
Circuit is bulky due to the present of two Inductive tuning offers very high wear and
u
om
Practical circuits for Colpitts-type oscillators are shown in following figures. We will
.c
analyze the common-collector configuration.
The small-signal equivalent circuit is shown where the transistor has been replaced
ng
with its hybrid-pi model, and the finite Q of the inductor is modeled with a series
co
resistance, r.
an
th
o ng
du
u
cu
om
1
𝑍1 = 𝑟
𝑗𝜔 𝐶1 + 𝐶𝜋 𝜋
.c
1
ng
𝑍2 = 𝑅𝑒
𝑗𝜔 𝐶2 + 𝐶𝑜
co
1
𝑍3 = 𝑅1 𝑅2 𝑟 + 𝑗𝜔𝐿
an
𝑗𝜔𝐶𝜇
th
In practice it is useful to choose 𝐶1 ≫ 𝐶𝜋 , 𝐶2 ≫ 𝐶𝑜 . This ensures that the external
ng
components swamp the internal capacitances of the transistor, thereby minimizing the
circuit’s dependence on variations in the internal transistor capacitances.
o
du
u
cu
Small signal equivalent circuit of CC Colpitts Oscillator Simplified small signal equivalent circuit.
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 20
Dung Trinh, PhD HCMUT / 2019
om
transistor, thereby minimizing dependence on 𝑟𝜋 (which depends on bias current and
.c
transistor 𝛽) and losses in 𝑟𝜋 and 𝑅𝑒 .
In view of these considerations, in the following analysis we shall make the following
ng
replacements: 𝐶1 + 𝐶𝜋 → 𝐶1 and 𝐶2 + 𝐶𝑜 → 𝐶2 .
co
It is now useful to make some approximations in order to simplify the analysis.We
an
assume that the impedances of the capacitances 𝐶1 and 𝐶2 are small compared to 𝑟𝜋
th
and 𝑅𝑒 , respectively. In other words, define 𝑄1 = 𝜔𝐶1 𝑟𝜋 and 𝑄2 = 𝜔𝐶2 𝑅𝑒 . We
assume that 𝑄1 ≫ 1 and 𝑄2 ≫ 1.
ng
Then 𝑍1 and 𝑍2 can be transformed using a high-Q parallel to series transformation.
o
du
𝑟 1 1 1
𝑍1 ≃ 𝑄𝜋2 + 𝑗𝜔𝐶 = 𝜔2 𝐶 2𝑟 + 𝑗𝜔𝐶 , 𝑄1 ≫ 1
1 1 1 𝜋 1
u
𝑅 1 1 1
𝑍2 ≃ 𝑄𝑒2 + 𝑗𝜔𝐶 = 𝜔2𝐶 2𝑅 + 𝑗𝜔𝐶 , 𝑄2 ≫ 1
cu
2 2 2 𝑒 2
𝑍3 ≃ 𝑟 + 𝑗𝜔𝐿
om
The real part of the equation is
.c
1 1 1 1
2 2 + 2 2 + 𝑟 + 𝑔𝑚 4 2 2 − 2
=0
𝜔 𝐶1 𝑟𝜋 𝜔 𝐶2 𝑅𝑒 𝜔 𝐶1 𝐶2 𝑟𝜋 𝑅𝑒 𝜔 𝐶 𝐶
ng
1 2
where 𝑟𝜋 = 𝛽
co
𝑔𝑚 .
At sufficiently high frequencies, the term involving 𝜔−4 may be neglected provided
an
that 𝜔2 𝐶1 𝐶2 𝑟𝜋 𝑅𝑒 ≫ 1, or if 𝑄1 𝑄2 ≫ 1. The steady-state transconductance can be
th
written as ng
𝐶1
𝜔2 𝐶1 𝐶2 𝑟 + 𝐶 𝑅
o
2 𝑒
𝑔𝑚,𝑠𝑠 =
du
𝐶
1− 2
𝐶1 𝛽
u
𝐶2 2
𝐶1 , then 𝑔𝑚,𝑠𝑠 ≃ 𝜔 𝐶1 𝐶2 𝑟.
In practical cases with 𝛽 ≫ 1 and 𝐶1 > 𝐶2 then
𝐶1 1
𝑔𝑚,𝑠𝑠 ≃ 𝜔2 𝐶1 𝐶2 𝑟 + and 𝜔0 = .
𝐶2 𝑅𝑒 𝐶 𝐶
𝐿𝐶 1+𝐶2
1 2
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 22
Dung Trinh, PhD HCMUT / 2019
om
The resonant frequency of a parallel resonant circuit depends on the Q as:
.c
1 𝑄2
𝑓0 =
ng
2𝜋 𝐿𝐶𝑇 𝑄2 + 1
co
A FET can be used in place of a BJT to minimize the loading effect of the transistor’s
an
input impedance because of the higher input impedance of FET.
th
Also, when an external load is connected to the oscillator output, 𝑓𝑟 may decrease
because of a reduction in Q if the load resistance is too small.
o ng
du
u
cu
om
a. Determine the frequency of oscillation of the circuit shown below. Assume the
.c
loading of the feedback circuit is neglectible.
b. Find the frequency of oscillation if the oscillator is loaded to a point where 𝑄 = 8.
ng
Solution
co
a. The frequency of oscillation is:
an
𝐶 𝐶
𝐶𝑇 = 𝐶 1+𝐶2 = 9.1 (𝑛𝐹)
th
1 2 ng
1 1
𝑓𝑟 = = = 7.46(𝑘𝐻𝑧)
2𝜋 𝐿𝐶𝑇 2𝜋 50×10−3 ×9.1×10−9
o
du
1
𝑓𝑟 = = 7.40 (𝑘𝐻𝑧)
cu
2𝜋 𝐿𝐶𝑇 𝑄2 +1
2. Clapp Oscillator
The Clapp oscillator is a variation of the Colpitts.
om
The basic difference is an additional capacitor, C3 in series with the inductor in the
resonant feedback circuit.
.c
Since C3 is in series with C1 and C2 around the tank circuit, the total capacitance is
ng
1 1 1
𝐶𝑇 = + +
co
𝐶1 𝐶2 𝐶3
an
In Clapp oscillator, C3 is much smaller than C1
th
and C2. As a result CT is approximately equal ng
to C3 and the resonant frequency is controlled
by C3.
o
du
om
Since the noninverting amplifier introduces
.c
zero phase shift, the frequency-selective
feedback circuit must also introduce zero phase
ng
shift to create the positive feedback condition.
co
The loop gain is the product of the amplifier
an
gain and the feedback transfer function:
𝑅2 𝑍𝑝
th
𝑇 𝑠 = 1+
𝑅1 𝑍𝑝 + 𝑍𝑠
ng
𝑅 1+𝑠𝑅𝐶
o
where 𝑍𝑝 = 1+𝑠𝑅𝐶 and 𝑍𝑠 = 𝑠𝐶
du
𝑅2 1
cu
𝑇 𝑠 = 1+
𝑅1 3 + 𝑠𝑅𝐶 + 1/𝑠𝑅𝐶
At the oscillation frequency, 𝜔0 :
𝑅2 1
𝑇 𝑗𝜔0 = 1 +
𝑅1 3 + 𝑗𝜔0 𝑅𝐶 + 1/𝑗𝜔0 𝑅𝐶
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 26
Dung Trinh, PhD HCMUT / 2019
om
𝑗𝜔0 𝑅𝐶 + 𝑗𝜔 = 0 which gives: 𝜔0 = 𝑅𝐶
0 𝑅𝐶
.c
The magnitude condition is then:
𝑅2 1 𝑅2
ng
1+ = 1 which gives: =2
𝑅1 3 𝑅1
co
an
Example 4: Design a Wien-bridge oscillator to oscillate at 𝑓0 = 20𝑘𝐻𝑧.
th
Solution:
1 1
ng
𝑅𝐶 = = 3
= 7.96 × 10−6
2𝜋𝑓0 2𝜋 × 20 × 10
o
du
• A 10𝑘Ω resistor and 796pF capacitor satisfy the requirement. Since the amplifier
resistor ratio must be 𝑅2 𝑅1 = 2, therefore we can choose 𝑅1 = 10𝑘Ω, and 𝑅2 =
u
cu
20𝑘Ω.
• Trade off: Standard-valued resistors 𝑅1 = 10𝑘Ω, and 𝑅2 = 20𝑘Ω. In place of the
ideal 796 pF capacitor, a standard-valued capacitor 𝐶 = 800𝑝𝐹 can be used. The
oscillation frequency would then be 𝑓0 = 19.9𝑘𝐻𝑧.
om
ladder network in the feedback.
The inverting amplifier introduces a 1800 phase shift, which means that each RC
.c
network must provide 600 of phase shift to produce the 1800 required of the frequency-
ng
sensitive feedback network in order to produce positive feedback.
co
The voltage followers in the circuit eliminate loading effects between each RC filter
stage.
an
Note that the inverting terminal of op-amp A3 is at virtual ground; therefore, the RC
th
network between op-amps A2 and A3 functions exactly as the other two RC networks.
o ng
du
u
cu
om
𝑣1 /𝑣𝐼 =
1 + 𝑠𝑅𝐶
.c
Since the RC networks are assumed to be identical, and since there is no loading effect
of one RC stage on another, we have:
ng
3
𝑠𝑅𝐶
co
𝛽 𝑠 = 𝑣3 /𝑣𝐼 =
1 + 𝑠𝑅𝐶
an
The amplifier gain 𝐴(𝑠) is:
th
𝑅2
𝐴 𝑠 =−
ng
𝑅
o
du
u
cu
om
𝑇 𝑠 =𝐴 𝑠 𝛽 𝑠 =−
𝑅 1 + 𝑠𝑅𝐶
.c
The condition for oscillation is that 𝑇 𝑗𝜔0 = 1 and the phase of 𝑇 𝑗𝜔0 must be
ng
360 degree. We set 𝑠 = 𝑗𝜔:
3
𝑗𝜔𝑅𝐶 𝜔𝑅𝐶 2
co
𝑅2 𝑗𝜔𝑅𝐶 𝑅2
𝑇 𝑗𝜔 = − =
𝑅 1 + 𝑗𝜔𝑅𝐶 𝑅 1 − 3 𝜔𝑅𝐶 2 + 𝑗𝜔𝑅𝐶 3 − 𝜔𝑅𝐶 2
an
Since the numerator is purely imaginary, the denominator must become purely
th
imaginary, or:
ng
1 − 3 𝜔0 𝑅𝐶 2 = 0
o
which yields 𝜔0 = 1 .
du
3𝑅𝐶
At the oscillation frequency, 𝑓0 :
u
𝑅2 1
cu
𝑇 𝑗𝜔0 =
𝑅 8
Consequently, the condition 𝑇 𝑗𝜔0 = 1 is satisfied when
𝑅2
=8
𝑅
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 30
Dung Trinh, PhD HCMUT / 2019
om
voltage-follower buffer stages.
.c
The three RC network stages and the inverting amplifier are still included. The loading
effect of each successive RC network complicates the analysis, but the same principle
ng
of operation applies.
co
The amplifier gain 𝐴(𝑠) is:
an
𝑅2
𝐴 𝑠 =−
th
𝑅
The feedback gain is:
ng
𝑠𝑅𝐶 3
o
𝛽 𝑠 =
𝑠𝑅𝐶 3 + 6 𝑠𝑅𝐶 2 + 5𝑠𝑅𝐶 + 1
du
u
cu
om
𝑇 𝑠 =𝐴 𝑠 𝛽 𝑠 =−
𝑅 𝑠𝑅𝐶 3 + 6 𝑠𝑅𝐶 2 + 5𝑠𝑅𝐶 + 1
.c
The condition for oscillation is that 𝑇 𝑗𝜔0 = 1 and the phase of 𝑇 𝑗𝜔0 must be
360 degree. We set 𝑠 = 𝑗𝜔:
ng
𝑅2 𝑗𝜔𝑅𝐶 3
co
𝑇 𝑗𝜔 = −
𝑅 𝑗𝜔𝑅𝐶 3 + 6 𝑗𝜔𝑅𝐶 2 + 5𝑗𝜔𝑅𝐶 + 1
an
At oscillation frequency, 𝑗𝜔0
th
𝑅2 𝑗𝜔0 𝑅𝐶 3
− =1
ng
𝑅 𝑗𝜔0 𝑅𝐶 3 + 6 𝑗𝜔0 𝑅𝐶 2 + 5𝑗𝜔0 𝑅𝐶 + 1
𝑅2
o
→ 6 𝜔0 𝑅𝐶 2 + 𝑗 𝜔0 𝑅𝐶 3 + 𝜔0 𝑅𝐶 3 − 5𝜔0 𝑅𝐶 = 1
du
𝑅
u
cu
which yields
𝜔0 = 1 6𝑅𝐶.
𝑅2
= 29
𝑅
om
shift oscillator shown, if the output frequency is 1 kHz.
.c
Solution:
1 1 1
ng
𝑓0 = →𝐶= = = 6.5(𝑛𝐹)
2𝜋𝑅𝐶 6 2𝜋𝑓0 𝑅 6 2𝜋 × 103 × 104 6
co
• 𝐴(𝑗𝜔0 ) must be greater than 29. Choose 𝐴(𝑗𝜔0 ) = 40. Then
an
𝐴 = 𝑔𝑚 𝑅𝐿 = 𝑔𝑚 𝑅𝐷 𝑟𝑑 = 40
→ 𝑅𝑑 = 10 (𝑘Ω)
th
o ng
du
u
cu
om
as an oscillator. Determine the frequency of oscillation.
.c
Solution:
• The circuit oscillates if
ng
𝑅𝑓
co
𝐴 = 𝑅 = 29 → 𝑅𝑓 = 29𝑅3 = 29 × 10𝑘Ω = 290(𝑘Ω)
3
an
• The frequency of oscillation:
th
1 1
𝑓0 = 2𝜋𝑅𝐶 = 2𝜋 = 6.5(𝑘𝐻𝑧)
6 6×104 ×10−9
o ng
du
u
cu
4. Crystal Oscillator
The most stable and accurate type of feedback oscillator uses a piezoelectric crystal in
the feedback loop to control the frequency.
om
Quartz is one type of crystalline substance found in nature that exhibits a property
.c
called the piezoelectric effect.
When a changing mechanical stress is applied across the crystal to cause it to vibrate, a
ng
voltage develops at the frequency of mechanical vibration.
co
Conversely, when an AC voltage is applied across the crystal, it vibrates at the
an
frequency of the applied voltage.
th
The greatest vibration occurs at the crystal’s natural resonant frequency, which is
ng
determined by the physical dimensions and by the way the crystal is cut.
o
du
u
cu
4. Crystal Oscillator
A piezoelectric crystal, such as quartz, exhibits electromechanical-resonance
characteristics that are very stable (with time and temperature) and highly selective
om
(having very high Q factors).
.c
The resonance properties are characterized by
ng
• A large inductance L (as high as hundreds of henrys),
co
• A very small series capacitance CS (as small as 0.0005 pF),
• A series resistance r representing a Q factor 𝜔0 𝐿 𝑟 that can be as high as a few
an
105.
th
• And a parallel capacitance Cp (a few pF).
o ng
du
u
cu
4. Crystal Oscillator
Example 7: Given a quartz crystal with the following parameters: 𝐿1 = 3𝑚𝐻, 𝑅1 =
om
6.8Ω, 𝐶1 = 0.0997𝑝𝐹 and 𝐶2 = 30𝑝𝐹. Compute the series, parallel resonant frequency
and the Q factor of the crystal.
.c
Solution:
ng
• The series resonant frequency of the crystal:
co
1 1
𝑓𝑠 = = = 9.2(𝑀𝐻𝑧)
an
−3
2𝜋 𝐿1 𝐶1 2𝜋 3 × 10 × 0.0997 × 10 −12
th
• The parallel resonant frequency of the crystal:
1
ng
𝑓𝑝 = = 9.23(𝑀𝐻𝑧)
𝐶1 𝐶2
o
2𝜋 𝐿1 𝐶 + 𝐶
du
1 2
• The Q factor of the crystal:
u
𝑄= = = 25500
𝑟 6.8
4. Crystal Oscillator
Since the Q factor is very high, we may express the crystal impedance as
2 1
om
1 1 𝑠 + 𝐿𝐶𝑠
𝑍 𝑠 = =
1 𝑠𝐶𝑝 2 𝐶𝑝 + 𝐶𝑠
.c
𝑠𝐶𝑝 + 𝑠 + 𝐿𝐶 𝐶
𝑠𝐿 + 1 𝑠𝐶 𝑝 𝑠
ng
𝑠
The crystal has two resonance frequencies: a series resonance at 𝜔𝑠 and a parallel
co
resonance at 𝜔𝑝
an
𝜔𝑠 = 1
𝐿𝐶𝑠
th
𝜔𝑝 = 1
ng
𝐶𝑠 𝐶𝑝
𝐿𝐶 +𝐶
o
𝑠 𝑝
du
1 𝜔2 − 𝜔𝑠2
cu
𝑍 𝑗𝜔 = −𝑗
𝜔𝐶𝑝 𝜔 2 − 𝜔𝑝2
We note that 𝜔𝑝 > 𝜔𝑠 . However, since 𝐶𝑝 ≫ 𝐶𝑠 , the two resonance frequencies are
very close. The parallel resonant frequency is usually at least 1 kHz higher than the
series resonant frequency.
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 38
Dung Trinh, PhD HCMUT / 2019
4. Crystal Oscillator
The crystal reactance is inductive over the very narrow frequency band between 𝜔𝑠
and 𝜔𝑝 . For a given crystal, this frequency band is well defined. Thus we may use the
om
crystal to replace the inductor of the Colpitts oscillator.
.c
The resulting circuit will oscillate at the resonance frequency of the crystal inductance
𝐶 𝐶
ng
L with the series equivalent of 𝐶𝑠 and 𝐶𝑝 + 1 2 . Since 𝐶𝑠 is much smaller than the
𝐶1 +𝐶2
co
three other capacitances, it will be dominant and
𝜔0 ≃ 1 ≃ 𝜔𝑠
an
𝐿𝐶𝑠
th
A popular Colpitts configuration (called the Pierce
ng
oscillator) utilizing a CMOS inverter as an amplifier.
o
Resistor Rf determines a dc operating point in the high-gain
du
om
purposes. Quartz crystal provides high accuracy and
.c
stability compared to other RC or LC or RLC
oscillators.
ng
In general the clock frequency is used for
co
microcontroller or CPU is ranged from kHz to Mhz.
an
This clock frequency determines how fast the
processor can process data.
th
To achieve this frequency a series crystal used with
ng
two same value capacitors network is used across the
o
du
om
usually implemented by tuning the feedback network by a variable capacitor.
.c
It is a very useful component in any system whose operating frequency needs to
change:
ng
FM radio, Frequency sweeping radars
co
Frequency synthesizers, Spectrum analyzers
an
Network analyzers
th
All the specifications for fixed oscillators are still applicable for VCO.
ng
Tuning sensitivity: frequency change per volt of tuning voltage change.
o
Sometimes referred to as “VCO gain”.
du
A higher sensitivity means that you can cover a large frequency range with small
tuning voltage; it also means that the output frequency is more sensitive to the
noise in the tuning voltage.
om
.c
ng
co
an
th
o ng
du
u
cu
om
.c
ng
co
an
th
o ng
du
u
cu
om
oscillating output 𝑉(𝑡). The output voltage 𝑉𝑜𝑢𝑡 𝑡 , differential or single ended, is
.c
periodic:
𝑉𝑜𝑢𝑡 𝑡 = 𝑉0 sin 𝜔𝑐 𝑡 + 𝜑
ng
The angular carrier frequency 𝜔𝑐 𝑉𝑡𝑢𝑛𝑒 is dependent on the tuning voltage input
co
𝑉𝑡𝑢𝑛𝑒 . The transfer function of input voltage to output frequency:
𝜕𝑓𝑐
an
𝐾𝑉𝐶𝑂 =
𝜕𝑉𝑡𝑢𝑛𝑒
th
Pushing: the transfer function from power suply to output frequency can be defined as
ng
𝜕𝑓𝑐
𝐾𝑉𝑑𝑑 =
o
𝜕𝑉𝑑𝑑
du
Pulling: VCO output frequency also varies with the load attached to its output:
u
𝜕𝑓𝑐
cu
𝑃𝑢𝑙𝑙𝑖𝑛𝑔 =
𝜕𝑙𝑜𝑎𝑑
om
𝑉𝑜𝑢𝑡 𝑡 = 𝑉0 sin 𝜔𝑐 𝑡 + 𝜑
.c
A real oscillator is more generally given by:
𝑉𝑜𝑢𝑡 𝑡 = 𝑉0 𝑡 y 𝜔𝑐 𝑡 + 𝜑 𝑡
ng
The fluctuations introduced by 𝑉0 𝑡 and 𝜑 𝑡 – now functions in time - result in
co
sidebands close to 𝑓𝑐 , with symmetrical distribution around 𝑓𝑐 .
an
The frequency fluctuations correspond to jitter in the time-domain, which is a random
th
perturbation of zero-crossings of a periodic signal.
ng
o
du
u
cu
om
density normalized to the carrier signal power. It is defined as
Ρ𝑠𝑖𝑑𝑒𝑏𝑎𝑛𝑑 𝑓𝑐 + Δ𝑓, 1𝐻𝑧
.c
ℒ 𝑓𝑐 , Δ𝑓 = 10 log (𝑑𝐵𝑐/𝐻𝑧)
Ρ𝑐𝑎𝑟𝑟𝑖𝑒𝑟
ng
• 𝑃𝑐𝑎𝑟𝑟𝑖𝑒𝑟 denotes the carrier signal power at the carrier frequency 𝑓𝑐 .
co
• 𝑃𝑠𝑖𝑑𝑒𝑏𝑎𝑛𝑑 denotes the single sideband power at the offset Δ𝑓 from the carrier 𝑓𝑐 at
an
a measurement bandwidth of 1Hz.
th
o ng
du
u
cu
om
signal with small power an unwanted signal with large power is present in an adjacent
.c
channel (at a close-by frequency).
After mixing with the LO the down-converted spectrum consists of two overlapping
ng
spectra. The wanted signal suffers from significant noise due to in-band signal from
co
the down-conversion of the interferer by the LO sideband: the signal-to-noise ratio is
degraded.
an
In order to be able to detect the signals from all channels while (stronger) interferers
th
may be present stringent phase noise specifications have to be met in wireless
ng
communication systems.
o
du
u
cu
om
phase-locked loop.
.c
PLL design is eased significantly with a VCO offering a linear dependence between
tuning voltage and frequency.
ng
At low offset frequencies, a 1/Δf3 behavior, also called flicker-noise behavior, is
co
observed.
an
For medium offset frequencies the phase noise shows a 1/Δf2-dependence, also called
th
white-noise behavior, up to where the constant amplifier noise floor begins to
dominate.
o ng
du
u
cu
Phase Locked Loop Noise spectra of the VCO and the resulting PLL output
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 48
Dung Trinh, PhD HCMUT / 2019
6. Exercises
Exercise 1: Consider the voltage amplifier in following figure.
om
𝑉𝐶𝐶 = 12𝑉, 𝑅1 = 10𝑘Ω, 𝑅2 = 30𝑘Ω, 𝑅𝑒 = 1𝑘Ω
.c
𝑅𝐶 = ∞ , 𝑅𝐿 = 1𝑘Ω , 𝐿 = 2𝜇𝐻 , 𝐶 = 50𝑝𝐹
Capacitors that are not labeled are assumed to be “short circuits” over the frequency range
ng
of interest. The transistor’s & is large enough so that the bias point does not explicitly
co
depend on its value. You may neglect the transistor parameters 𝑟𝑥 , 𝑟𝜇 , 𝑟𝜇 , 𝑟𝑜 , and 𝐶𝑜 in your
an
analysis for parts 1b, 1c, and 1d.
th
a. Find the quiescent collector current, 𝐼𝐶𝑄 . Express
ng
your result in mA.
o
b. Find the resonant frequency of the amplifier. The
du
6. Exercises
Exercise 2: A quartz crystal resonator has the equivalent circuit
om
shown in following figure. Suppose it is known that a particular
crystal has Q = 50000, series resonant frequency of 5𝑀𝐻𝑧,
.c
and parallel resonant frequency of 5.005𝑀𝐻𝑧. It is also known
ng
that the parallel resonant frequency shifts by 1𝑘𝐻𝑧, if a 3𝑝𝐹
capacitor is placed in parallel with the crystal. Find the values
co
of the equivalent circuit elements for the crystal.
an
Exercise 3: Consider the AC equivalent circuit for an oscillator
th
circuit in following figure. The loop gain for this circuit can be
ng
shown to be:
1
𝑔𝑚 2
o
𝜔 𝐶1 𝐶2
du
𝑇=
1 1 𝑗𝜔𝑅𝐿
+ +
u
6. Exercises
Exercise 4: Consider the circuit in following figure.
om
a. Find an expression for the frequency of
.c
oscillation.
b. Find the minimum value of gm required to
ng
make the circuit oscillate.
co
Hartley Oscillator
an
th
ng
Exercise 5: Consider the circuit in following figure.
The amplifier has infinite input impedance and
o
du
voltage gain A.
a. Find an expression for the frequency of
u
cu
6. Exercises
Exercise 6: The crystal oscillator circuit shown in following figure is called a “series
om
mode” oscillator, because it will oscillate very close to the series resonant frequency of the
crystal. Here the crystal grounds the base of the transistor at its series resonant frequency.
.c
The circuit will also oscillate if the crystal is replaced by an “AC” short circuit (e.g., a
ng
bypass capacitor). Use the negative resistance approach to study this oscillator. You can
also assume that R1 and R2 can be neglected and that Re is much larger than the reactance
co
of C2, so that it can be neglected as well. The coupling capacitors can be taken to be AC
an
short circuits.
th
a. First, remove the crystal and “look in” to the rest
of the circuit. Solve for the input impedance and show
ng
that it is given by
o
𝑍1 𝑍𝐿 + 𝑍2 + 𝑔𝑚 𝑟𝜋 𝑍1 𝑍2
du
𝑍𝑖𝑛 = 𝑟𝜋 +
𝑍1 + 𝑍2 + 𝑍𝐿
u
1 1 𝑗𝜔𝐿𝑅
cu
b. Solve for the frequency at which the circuit will oscillate (𝜔0 ), if an AC short is
connected from the base of the transistor to ground (instead of the crystal). You can
assume that 𝑅𝐿 ≫ 𝜔𝐿 at the frequency of oscillation.
c. What condition must be satisfied in order to guarantee that oscillations will start?
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 52
Dung Trinh, PhD HCMUT / 2019
6. Exercises
Exercise 7: Consider the oscillator circuit shown in following figure. In this problem,
om
𝑉𝑐𝑐 = 3𝑉, 𝑅𝑏 = 33𝑘Ω, 𝑅𝑒 = 100𝑘Ω, 𝐶1 = 10𝑝𝐹, 𝐶2 = 22𝑝𝐹. Unlabeled capacitors are
either coupling or bypass elements and have negligibly small impedance at the frequencies
.c
of interest.
ng
a. Find an approximate value for the quiescent
co
collector current, 𝐼𝐶𝑄 . You may assume that 𝛽 = 100.
b. Find the 𝑔𝑚 for the transistor in this circuit.
an
c. Assume that the reactances of 𝐶1 and 𝐶2 are small
th
enough such that 𝑟𝜋 , 𝑅𝑒 , and 𝑅𝑏 can be ignored for
ng
small-signal analysis. In this case, if the inductor is
o
removed the impedance 𝑍𝑖𝑛 will be
du
d. Suppose a lossy inductor is available with inductance equal to the value that you
calculated in part (c). Calculate the minimum inductor Q (i.e., QL) required for
oscillations to be sustained in this circuit.
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 53
Dung Trinh, PhD HCMUT / 2019
6. Exercises
Exercise 8: Consider the Colpitts oscillator shown in following figure.
om
a. Find an expression for the frequency of oscillation, 𝜔0 . You may assume that the loop
gain of the circuit is large enough to cause oscillation to start. You may neglect the
.c
transistor immittances, so that your result will be in terms of only the four parameters L,
ng
𝐶1 , 𝐶2 , 𝐶𝑉 .
co
b. Denote the minimum and maximum tuning-diode capacitances by 𝐶𝑉,𝑚𝑖𝑛 and 𝐶𝑉,𝑚𝑎𝑥
𝐶𝑉,𝑚𝑎𝑥
and the capacitor tuning ratio by 𝑟𝐶 = . Denote the minimum and maximum
an
𝐶𝑉,𝑚𝑖𝑛
th
frequencies of oscillation by 𝜔0,𝑚𝑖𝑛 and 𝜔0.𝑚𝑎𝑥 and the oscillator tuning ratio by 𝑟𝑜 =
𝜔0,𝑚𝑎𝑥 ′ , i.e. 𝐶 ′ = 𝐶1 𝐶2 . Find an
. Finally, denote the series combination of 𝐶 and 𝐶 by 𝐶
ng
𝜔 1 2 𝐶 +𝐶
0,𝑚𝑖𝑛 1 2
expression for 𝑟𝑜 in terms of 𝑟𝐶 , 𝐶 ′, and 𝐶𝑉,𝑚𝑎𝑥 only.
o
du
A VCO
Dept. of Telecoms Engineering CuuDuongThanCong.com https://fb.com/tailieudientucntt 54
Dung Trinh, PhD HCMUT / 2019
om
.c
ng
co
Q&A
an
th
o ng
du
u
cu