International Ter Rectifier Advanced Process Technology Uttra Low On-Resistance Dynamic dvict Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Seventh Generation HEXFET® Power MOSFETs fom International Rectifer uliliza advanced processing techniques to achieve extremely low onresistance pet siicon area. This benef, combined with the fast Suitching speed and ruggedized device design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely effclent and reliable device fr use in a wide variety of applications ‘The 0-220 package is universally preferred for all ccommercialindustral applications at power dissipation levals to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 ccontiuteoits vide acceptance throughoutthe industry. Absolute Maximum Ratings PD-91896E, IRF1404 HEXFET® Power MOSFET > Voss = 40V it} K) || Rosien = 0.0040 Ip = 162A@ Parameter Units BOTe=ISC | Corinanus Oran Curent, Veg @ TOV b@Te=100C] Continuous Oran Curent, Vos @IOY | OC by ~[ Fused Drain Curent © Fp@le= 2 | Power Dissipation Ww near Dersting Factor We Vee Gale Souros Valiage ¥ Ess Single Pulse Avalanche ETeTava mn ta ‘yalenshe Curent A Esa Repative Avalaneha Energy nd ae Peak Diode Recovery drat © 50 Wis Ty ‘Operating Junction and Seis Tere. Storage Temperature Range 55 to 175 © Eoidetng Tenperature_ br 10 Secor “HAs Fm oa68 ) Mouring Torque, €39 or MS scam TOTerin Ahm) Thermal Resistance Parameter Max. Units Fis Tero ase om Fos Case oS, FM, Crease SHE 05 — cow Fan lunctomo-ambient = a ‘www irf.com 1 yo20m0IRF1404 International ToR Rectifier Electrical Characteristics @ T, = 25°C (unless otherwise specified) Parameter ‘Min | Typ. [Max. [units Concitons | Tpqecs | Danie Sauce Greakdown Vatage [a0 |—]— | V_[Was=00 b= 250K 2Wennse| Breakcon Votlage Temp. Costicrt [WF | Reference fo ec, Te Rosny | State Drarvto-Sours On-Resistance row a Ves [ata Thrashed Vonage cr te Forward Transbonuclanoe = a ss | Dre Source Leakage Curent vA ‘ ° aso S ca Souee Faward Lewags | —— [Too | 1985 ____[Gatedo-Source Reverse Leakaas | — | — [-200 3 Tote Gale Charge a0 [700 Os Gate Souree Change = [—| re at ‘Gao-io bran (or) CHAS 2 [oo Teqy_ [Tarn Delay Time TI te Rise Time = an = ‘eq Turron Datay Tin 72 i it Fal Tine 26 : ohvaen Wad z lb Inara an Pausanoe [48 [=] |, |eamozes of : ‘rom package taal Sous ane KLIK | [anteirtr sea contact Tp Capeataree =a Veg= Ov Css | Dupul Capacitance 1680] — | oF | vos=25v Cie [Reverse Trenster Capantance 2a [— f= 1oMhe, SeeFig 5 Cexz | Ouput Capactince ta Vas=0V, vos = 10V, [= 10M Coss Output Capacitance sa Vas =0V, Vos = 82, f = 1.0MHz Coast | Etectve Cutout Capacitance i340] — Ves =0V, os = OV 22 Source-Drain Ratings and Characteristics Parameter iin. Typ | Max [Units Conlon % Carinanis Source Curent WOSFET smo} (Body Diode) TL [29) | snowing the Tbe Pulsed Source Curent Fo) | irteorl reverse {Body Diode] © -|— p-nyunction side Ves ‘Thode Forwara voriaga SS = 2s = 95 Ves ty Reverse Reooveny TIE Fats |B, GR or Reverse Recoverscharae == [aaa] we | ies = tones ten Forwari- Turn Tine inraisturran eis neplabeturran is derinaecTby Le) © Repettive rina, pub with fited by max jureien temperatura (S96 1g. 11) 1 Staring Ty = 25°C, L = 0.12mH F=250s= 954, (See Figure 12) D ley $954, duces 150%U, Von Yeryoss @pu maths 200s; duty one $25 © Cogs ff 1s @ xed capacitares that gives tho same chraina time 25 Cossmhile Vg i sing Fem D to £056 Vogs, (© Calculated contiruous current bessd an maximum allowable Juneion tempersture, Package Imitaton current is 75A www irf.comInternational IRF1404 Tor Rectifier ‘oon ‘000 z z Bonnie i 5 é 8 2 2 3 100 5 100 2 3 € £ 5 = & & a 4 us USE WOT . sere "oF 4 10 100 O41 1 10 100 Vos .Drainto-source Vatage «”) Vos, Drate-Soure Votage tv) Fig 4. Typical Output Characteristics Fig 2. Typical Output Characteristics von ad T5aA = 3 2 & @ 8 : Sau g gu & a - a 2 0s - z voo=25¥ B o Iisrwcewom| € 4 0 a rT a 60-49-20 0 29 40 00 80 1 TR 10 Te0 1H Vos, Gate-to-Source Votage (V) ,, Juneton Temperatre{'C) Fig 3. Typical Transfer Characteristics Fig 4, Nomalzed On-Resistance Vs. Temperature www irf.com 3IRF1404 12000 ‘0000 ao ©. Capacitance (pF) soo 1 0 100 Vs, Drainto-Source Votage (V) Fig 5. Typical Capacitance Vs. Drain-to-Saurce Vaitage ‘00 150, Reverse Drain Curent (A) Vap=av be 08 43S Vsp Souree-o-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage niernational Tor Rectifier 2 Tae a g. 3 go 2 For.Test clecun| 5 SEE FIGURE “3 a a q, Tolal Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gale-to-Source Voltage ‘ano OPERATION IL THIS AREA LIMITED son} 00 € Siw 5 a iste Shag Puls Y 0 100 Vps. Draimo-Source Vollage (Vv) Fig 8. Maximum Safe Operating Area www irf.comInternational Tor Rectifier IRF1404 R ™ TTT rtd Vos > LIWITED BY PACKAGE, \ Ves (ea 160 Reet ~ Ui4 00 g \ oe Zo 3 Fig 10a. Switching Time Test Circuit 4 Ves 0% a a a) To, Case Temperature (°C) “0% Vos Fig 9. Maximum Drain Current Vs, Case Temperature Thermal Response Zinc) “Cham omar Fig 100, Switching Time Waveforms bef mena eseouse, tee Pavia tite 2 Pea Ty=P owe Zino To ‘1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junctianto-Case www irf.comIRF1404 NER 000 \ niernational ToR Rectifier D Top 398 ral BOTTOM 954 Fig 12b. |Unclamped Inductive Waveforms ‘change = Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 Fas. Vonsay “Avalanche Votage(Y ) . Single Pulse Avalanche Energy (mJ) 0 280 7502S SD TTS: Starting Ty, Junction Temperature("C) Fig 12c, Maximum Avalanche Energy Vs. Drain Current sa ae “ 44 2 a . mo 0 mt Jay. Avalanene Cumere (4) Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current www irf.comInternational Tor Rectifier pur iM . © z + Ground Plane: + © + Low Leakege Inductance [<< ——crrout Layout consaeratons IRF1404 Peak Diode Recovery dvidt Test Circuit + Loe Stray inductance Current Transtar —< vist cortrotad ay Rg Driver same type es DUT gp controled by Duty Factor“O" DUT. - Daves Under Tast © cer exe Dive ow ® Sevoce Cire” ® esos Noid ® www irf.com a ened ——— ened | / 7 "Vas DUT tgp Woveter ye fom bu T yo aver Pog a te (lade cover ate NY L_« ‘ody Diode? Foreart rop eels ocr cure mo forLoge Level Dovioes Fig 14, For N-channel HEXFET® Power MOSFETsIRF1404 International Tor Rectifier TO-220AB Package Outline Dimensions are showin in milimeters (inches) poms a Ky Shag ma SO" i th wegen ABER, = > ime | alain GSI) Tor L ita TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRFIO(O WITH ASSEMBLY Lot oODE Sati INTERNATIONAL _- PART NUMBER RECTIFIER - IRFIO10 oso gpa igs IM] pate cope ASSEMBLY “ ww) Lor cope Vy 2 YEAR win = WEEK ~ International TeR Rectifier IRWORLD HEADQUARTERS: 288 Kices St El Sogundo, Calferma 99245, USA Tol (910) 252-7108 IREUROPEAN REGIONAL CENTRE: 1391015 Godsione rs, Whyteleafe, Surey CR OBL, Uke Tok +» 4a(9}20 atte sco0 IR CANADA: 15Lincon Cour, Brampton, Ontario L5T322, Tel (205] 453 2200 IR GERMANY: Soabirgatass6 167, 61290 Baa Homburg Tel ++ 40(0)6 172 98560 IRITALY: Yi Liguia 46,1007 Boigero, Torito Tel + 88011 451 0111, IR JAPAN: eH Bid. 2F, 30-4 Nsh-tkebulute $-Chome,Tashna-ku, Tokyo 121 Tel. 81 (O38 $088 0085 IR SOUTHEAST ASIA: 1m Seng emer, Creat Word City West Towa, 13-11, Singapore 237904 Tet +65 (S36 4020 IR TAIWAN: 16 FL SuteD 207,.Seo. 2, Tun Haw South Road, Tape, 10573 Te BB-{0}2 2977 9835 ‘Data ara spooieatens sutyac ia changa wihout natce, 10°00 8 wow irf.com,