Professional Documents
Culture Documents
General Description Product Summary: 30V N-Channel MOSFET
General Description Product Summary: 30V N-Channel MOSFET
DFN 3x3A
Top View Bottom View D
Top View
S D
S D
S D G
G D
Pin 1 S
Pin 1
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 60 75 °C/W
Maximum Junction-to-Case Steady-State RθJC 6.6 8 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 30
10V
4V VDS=5V
25 25
5V
20 20
3V
ID (A)
ID(A)
15 15
10 10 125°C
5 VGS=2.5V 5 25°C
0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
30 1.8
Normalized On-Resistance
25
1.6 VGS=10V
VGS=4.5V ID=9A
20
Ω)
RDS(ON) (mΩ
1.4
17
15
5
1.2 2
10 VGS=10V VGS=4.5V
ID=8A
10
1
5
0 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
40 1.0E+02
ID=9A
35 1.0E+01
40
1.0E+00
30
Ω)
RDS(ON) (mΩ
1.0E-01 125°C
IS (A)
125°C
25
1.0E-02
20 25°C
1.0E-03
15 25°C 1.0E-04
10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 1200
VDS=15V
ID=9A
1000
8
Ciss
Capacitance (pF)
800
VGS (Volts)
6
600
4
400 Coss
2
200
Crss
0 0
0 3 6 9 12 15 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0 200
10µs
RDS(ON) 10µs 160
10.0 TJ(Max)=150°C
limited
100µs TC=25°C
ID (Amps)
Power (W)
120 17
1.0 DC 1ms 5
10ms 80 2
TJ(Max)=150°C 10
0.1
TC=25°C 40
0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18Junction-to-
Figure 10: Single Pulse Power Rating
Operating Area (Note F) Case (Note F)
10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance
RθJC=8°C/W 40
1
0.1 PD
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100 20
TA=25°C
IAR (A) Peak Avalanche Current
TA=100°C
16
TA=125°C 8
1 0
1 10 100 1000 0 25 50 75 100 125 150
µs)
Time in avalanche, tA (µ °C)
TCASE (°
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)
30 10000
25 TA=25°C
1000
Current rating ID(A)
20
17
Power (W)
100
5
15
2
10
10
10
5
0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
°C)
TCASE (° Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance
1 RθJA=75°C/W 40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
t on toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds