SS8050 — NPN Epitaxial Silicon Transistor

July 2010

SS8050
NPN Epitaxial Silicon Transistor

Features
• 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=2W (TC=25°C)
1 TO-92
1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

Symbol Parameter Value Units

VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 1.5 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V
BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA
IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA
hFE1 DC Current Gain VCE=1V, IC=5mA 45
hFE2 VCE=1V, IC=100mA 85 300
hFE3 VCE=1V, IC=800mA 40
VCE (sat) Collector-Emitter Saturation Voltage IC=800mA, IB=80mA 0.5 V
VBE (sat) Base-Emitter Saturation Voltage IC=800mA, IB=80mA 1.2 V
VBE (on) Base-Emitter On Voltage VCE=1V, IC=10mA 1 V
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 9.0 pF
fT Current Gain Bandwidth Product VCE=10V, IC=50mA 100 MHz

hFE Classification
Classification B C D
hFE2 85 ~ 160 120 ~ 200 160 ~ 300

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

SS8050 Rev. B3 1
 SS8050 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics

0.5 1000

VCE = 1V
IB = 3.0mA
IC[A], COLLECTOR CURRENT

0.4

hFE, DC CURRENT GAIN

IB = 2.5mA
100
0.3 IB = 2.0mA

IB = 1.5mA
0.2
10
IB = 1.0mA
0.1

IB = 0.5mA

1
0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

10000 100

IC = 10 IB VCE = 1V
IC[mA], COLLECTOR CURRENT

VBE(sat)
1000 10

100 1

VCE(sat)

10 0.1
0.1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage

1000 1000

IE = 0 VCE = 10V
CURRENT GAIN BANDWIDTH PRODUCT

f = 1MHz
Cob [pF], CAPACITANCE

100 100
fT[MHz],

10 10

1 1
1 10 100 1 10 100 400

VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

SS8050 Rev. B3 2
 SS8050 — NPN Epitaxial Silicon Transistor
Physical Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

SS8050 Rev. B3 3
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The datasheet is for reference information only.
Rev. I49

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