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et
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|EC-2019|
GENERAL APTITUDE
Q. No. 1 - 5 Carry One Mark Each
1. Five different books (P, Q, R, S, T) are to be arranged on a shelf. The books R and S are to be
arranged first and second, respectively from the right side of the shelf. The number of different
order in which P, Q and T may be arranged is __________.
(A) 2 (B) 120 (C) 6 (C) 12
Key: (C)
Sol: (P,Q,T) S R
ww 3  2  1
choices choices choice
w  The number of different orders in which P, Q and T arranged = 3 × 2 × 1= 6
.Ea
2. The boat arrived ________ dawn.
(A) on (B) syE at (C) under (D) in
Key: (B)
ngi
3. It would take one machine 4 hours to complete a production order and another machine 2 hours
to complete the same order. If both machines work simultaneously at their respective constantnee
rates, the time taken to complete the same order is __________ hours.
(A) 2/3 (B) 7/3 (C) 4/3 rin (D) 3/4
Key: (C)
g.n
Sol: Machine 1 takes to complete a work = 4 hours
 Machine 1, 1 hour work 

1
4
et
Machine 2 takes to complete the same work = 2 hours
1
 Machine 2, 1 hour work 
2
1 1 3
(Machine 1+ Machine 2)  1 hour work   
4 2 4
Total work 1 4
Required time    hours
1hr work 3
4
3  
© All rights reserved by Thinkcell Learning Solutions Pvt. Ltd. No part of this booklet may be reproduced or utilized in any form without the written permission.

|EC-2019|
4. When he did not come home, she _______ him lying dead on the roadside somewhere
(A) concluded (B) pictured (C) notice (D) looked
Key: (B)
5. The strategies that the company ________ to sell its products ________ house-to-house
marketing.
(A) uses, include (B) use, includes (C) uses, including (D) used,
includes
Key: (A)
Q. No. 6 - 10 Carry Two Marks Each
ww
6. “Indian history was written by British historians – extremely well documented and researched,
w but not always impartial. History had to serve its purpose: Everything was made subservient to
.Ea
the glory of the Union Jack. Latter-day Indian scholar presented a contrary picture.”
From the text above, we can infer that:
(A) syE
Indian history written by British historians ________.
was well documented and not researched but was always biased
(B)
(C) ngi
was not well documented and researched and was sometimes biased
was well documented and researched but was sometimes biased
Key: (C)
(D) was not well documented and researched and was always biased
nee
rin
7. Two design consultants, P and Q, started working from 8 AM for a client. The client budgeted a
total of USD 3000 for the consultants. P stopped working when the hour hand moved by 210 g.n
degrees on the clock. Q stopped working when the hour hand moved by 240 degrees. P took two
tea breaks of 15 minutes each during her shift, but took no lunch break. Q took only one lunch
break for 20 minutes, but no tea breaks. The market rate for consultants is USD 200 per hour
et
and breaks are not paid. After paying the consultants, the client shall have USD ________
remaining in the budget.
(A) 000.00 (B) 433.33 (C) 166.67 (C) 300.00
Key: (C)
Sol: Given, P and Q started working from 8 A.M for a client
Total budget = USD 3000
P worked exactly 7 hours but took 30 min break.
‘P’ working number of hours = 6.5 hours
‘Q’ worked exactly 8 hours but took 20 min break.
‘Q’ working number of hours  7.67 hours

|EC-2019|
Client paying for both P and Q = USD 200/hr

 Total USD Paid = 6.5 × 200 + 7.67 × 200 = 1300 +1534 = 2834
After paying the consultants P and Q, the client shall have USD remaining in the budget
 3000  2834  166
8. Five people P, Q, R, S and T work in a bank . P and Q don’t like each other but have to share an
office till T gets a promotion and moves to the big office next to the garden. R, who is currently
sharing an office with T wants to move to the adjacent office with S, the handsome new intern.
Given the floor plan, what is the current location of Q, R and T?
(O = Office, WR = Washroom)
(A) O4 (B) O1
WR O1 O2 O3 WR O2 O3 O4
ww P,Q R,T S P,Q R S
w (C)
Manager
.Ea Entry
Teller Teller
(D)
Manager
T
Entry
Teller Teller
1 2
Garden
syE Garden
WR O1 O2 O3 O4
WR O1
P
O2
Q Rngi
O3 O4
S
P,Q T R,S
nee Manager Teller Teller

Manager Teller Teller
1 2 rin Entry
1 2
Garden
Entry Garden
g.n
Key: (A)
Sol: According to the given data, Option (A) is correct.
et
9. Four people are standing in a line facing you. They are Rahul, Mathew, Seema and Lohit. One
is an engineering, one is a doctor, one a teacher and another a dancer. You are told that:
1. Mathew is not standing next to Seema
2. There are two people standing beween Lohit and the engineer
3. Rahul is not a doctor
4. The teacher and the dancer are standing next to each other.
5. Seema is turning to her right to speak to the doctor standing next to her.
Who amongst them is an engineer?
(A) Rahul (B) Mathew (C) Seema (D) Lohit

|EC-2019|
Key: (B)
Sol: According to the given data; we have
one person
Teacher Dancer
or or
Engineer Dancer Teacher
Mathew Rahul Seema Lohith
Right side
ww 
Not a
doctor
Mathew must be an Engineer.
Doctor
10.
w .Ea
The bar graph in Panel (a) shows the proportion of male and female illiterates in 2001 and 2011.
syE
The proportions of males and females in 2001 and 2011 are given in Panel (b) and (c),
respectively. The total population did not change during this period.
The percentage increase in the total number of literate from 2001 to 2011 is _________.
ngi
Proportion of illiterates  % 
100
80
nee
60
40
60
40
50
40
rin
20
0 g.n
Panel (a)
Female
2001
Male
2011 et
2001 2011
Female
Male 40% Male Female
60% 50% 50%
Panel (b) Panel (c)
(A) 33.43 (B) 35.43 (C) 34.43 (D) 30.43

|EC-2019|
Key: (D)
Sol: Let us assume, that population = 100 [2001–2011]
From panel (a); From panel (b & c);
Percentage of male literates in 2001 = 50% Number of males in 2001=60
Percentage of female literates in 2001 = 40% Number of females in 2001=40
Percentage of male literates in 2011 = 60% Number of males in 2011=50
Percentage of female literates in 2011 = 60% Number of females in 2011=50
50
 Number of male literates in 2001  60   30
100
40
Number of female literates in 2001  40   16
ww Number of male literates in 2011  50 

60
100
 30
w .Ea
Number of female literates in 2011  50 
100
60
100
 30
syE
Total number of literates in 2001 = 30 + 16 = 46
Total number of literates in 2011 = 30 + 30 = 60

ngi
Percentage increase in the total number of literates from 2001–2011
 60  46

 46


 14
 46

 100 %    100 %  30.43%

nee 46 60
rin
g.n
et

|EC-2019|
ELECTRONICS & COMMUNICATION ENGINEERING
Q. No. 1 to 25 Carry One Mark Each
1. Radiation resistance of a small dipole current element of length l at a frequency of 3 GHz is 3

ohms. If the length is changed by 1%, then the percentage change in the radiation resistance,
rounded off two decimal places, is __________%.
Key: (2)
Sol: Given, R rad  3, and f  3GHz
d dR rad
% change in length  100%  1%,  100%  ?
ww R rad 
80 2 2
…(1)
R rad
w 2
.Ea
Change in resistance with respect to change in length is 
dR rad
d
 802
2  2
 

 …(2)

Equation  2 
dR rad
2
 d  2 
2 syE
Equation 1
dR rad
R rad
ngi
nee
d
  2
R rad
dR rad    d 

R rad
 100%  2    100%   % change in length
 


rin
 100%  1% 

 % change in radiation resistance = 2%.
g.n
2. Which one of the following functions is analytic over the entire complex plane?
(A) n z (B) cos(z) (C) e1/z

et (D)
1
1 z
Key: (B)
Sol: n  z  is not analytic at z = 0;
1
e z is not analytic at z = 0 and
1
is not analytic at z = 0.
1 z
But cos(z) is analytic over the entire complex plane,
Since cos z  cos  x  iy   cos x cos  iy   sin x sin iy  
 cos x cosh y  isin x sinh y;  u  iv form

|EC-2019|
Where, u  x, y   cos x cosh y; v  x, y    sin x sinh y
u x   sin x.cosh y vx   cos x.sinh y

u y  cosxsinhy v y   sin x.coshy
 u x  v y & u y   v x V z.
  sin x
3. The value of the integral 0 y x
dx dy, is equal to _________.
Key: (2)
  Y
sin x
Sol: 0 0 x dx dy
 ,  
ww Given limits are x  y  x   & y  0  y  .
For change of order of integration,
yx
w Consider a strip parallel to Y-axis. Then
.Ea
Limits of y are: y  0  y  x and
 0,0  y0 x
 ,0 
X
Limits of x: x  0  x  
 
 
sin x
dxdy 
  
sin x 
.dy dx 

  y0 x  x0 x  0
syE
sin x x
y .dx 

0 sin x.dx

0 0
x x 0 
 
ngi x
   cosx 0   cos   cos0   1  1  2

nee


siny
 
0 y
x
dx dy  2
rin
4. In the circuit shown, VS is a square wave of period T with maximum and minimum values of 8V
and –10V, respectively, Assume that the diode is ideal and R1  R 2  50. The average value of g.n
VL is _________ volts (rounded off to 1 decimal place).
R1 et

8
0 VS 
T  R2 VL
T
2
10 

|EC-2019|
Key: (-3) R1
Sol:
T 
8
2 T
0 VS  R2 VL
t
10 
Case (i) For +ve half cycle diode is reverse bias:

R1
ww R.B 
w VS 
.Ea R2 VL
syE 
ngi
R2 50
VL  .VS   8V  4V
R1  R 2 100
Case (ii):
For negative half cycle diode is forward bias and ideally act as short circuit. nee
R1
rin

g.n
VS 
S.C
R2 VL
et

V0
VL  V s  10V. So, output waveform is
T  T T
4V 
  10V   4V
2  2 2 T
Vavg   2V  5V  3V
T 0 t
 Vavg  3V
10V

|EC-2019|
2 2 3 3
0 1 1 1 
5. The number of distinct eigen values of the matrix A   is equal to __________.
0 0 3 3
 
0 0 0 2
Key: (3)
Sol: Given,
2 2 3 3
0 1 1 1 
Matrix A    Upper triangular matrix
0 0 3 3
 
0 0 0 2
 Eigen values of A are   2,1,3, 2  diagonal elements 
ww  The number of distinct eigen values of the matrix = 3.
6.
w .Ea
The families of curves represented by the solution of the equation
dy
dx
x
  
y
n
For n = –1 and n = +1, respectively, are

(A) Hyperbolas and Circles
syE (B) Circles and Hyperbolas
(C) Hyperbolas and Parabolas
ngi (D) Parabolas and Circles
Key: (A)
dy x
  
n
nee
rin
Sol: Given D.E
dx y

dy
dx
xn
 n
y
…(1)
g.n
For n = –1; we have
dy
dx
x 1
  1  1 
y
et
dy y 1 1
    dy  dx  variable separable D.E 
dx x y x
Integrating on both sides; we get
 ny   nx  nc  n  xy   nc
 xy  c2
 xy  c  represents family of hyperbolas.

2
For n =1; we have

dy x
  1
dx y

|EC-2019|
 ydy  xdx  variable separable D.E

Integrating on bothsides; we get
y2 x2 x 2 y2
 c  c
2 2 2 2
 x 2  y2  c
 c  ; which represents family of circles

2
 x 2  y2 
7. In the table shown, List-I and List-II, respectively, contain terms appearing on the left-hand side
and the right-hand side of Maxwell’s equations (in their standard form). Match the left-hand
side with the corresponding right-hand side.
List-I List-II
ww 1. .D
E
(P) 0
w
2. (Q)
3. .B
.Ea (R) 
B
t
4. H
syE (S) J
D
t
(A) 1-Q, 2-R, 3-P, 4-S ngi (B) 1-Q, 2-S, 3-P, 4-R
Key: (A)
(C) 1-P, 2-R, 3-Q, 4-S (D)
nee 1-R, 2-Q, 3-S, 4-P
Sol: .D  
B rin
E 
.B  0
t
g.n
H  J 
D
t
et
1  Q, 2  R,3  P, 4  S  Option (A) is correct
 2   
8. Consider the signal f  t   1  2cos  t   3sin  t   4cos  t   , where t is in seconds. Its
 3  2 4
fundamental time period, in seconds, is ___________.
Key: (12)
Sol: It is given that,
2  
f  t   1  2cos t  3sin t  4cos  t  
3  2 4

|EC-2019|
Its fundamental frequency 0
HCF  , 2,   
0  
LCM 1,3, 2  6
2 2  6
T0    12 sec
0 
9. If X and Y are random variables such that E  2X  Y   0 and E  X  2Y   33, the

E  X   E  Y  = __________.
Key: (11)
Sol: Given, E  2x  y   0 & E  x  2y   33
ww  2E  x   E  y   0 …(1)
Solving (1) and (2); we have
 E  x   2E  y   33 …(2)
w 2E  x   E  y   0
2E  x   4E  y   66 .Ea  equation  2  multiplied by 2
  
3E  y   66  E  y   22 syE

From (1);
2E  x   E  y   0  2E  x   E  y  ngi
 2E  x   22  E  x   11
nee
 E  x   E  y  11  22  11  E  x   E  y   11
rin
10. In the circuit shown, what are the values of F for EN = 0 and EN = 1, respectively? g.n
Vdd
et
EN
(A) 0 and 1 (B) Hi  Z and D

(C) 0 and D (D) Hi  Z and D

|EC-2019|
Key: (D) Vdd

Sol:
EN
CMOS Inverter
ww  NAND gate enabled, when their enable input is “1” and NOR gate enabled, when their
enable input is “0”.
w Case (i):
.Ea
When EN = 0, the both the logic gates NAND and NOR disabled, so CMOS inverter input is
floating. So, output is also high impedance state.
F  Hi  z
Case (ii): syE
ngi
When EN = 1, then both the logic gates NAND and NOR are enabled with output D that is
input of CMOS inverter.
So, F  D  D
nee
11.
1
Let H(z) be the z-transform of a real-valued discrete time signal h[n]. If P  z   H  z  H   has
z rin
1 1
a zero z   j, and P(z) has a total of four zeros, which one of the following plots represents
2 2 g.n
all the zeros correctly?
(A) z-plane Imaginary
axis
et
2
z 1
0.5
2 0.5 0.5 2 Real axis

0.5
2

|EC-2019|
z-plane Imaginary
(B)
axis
2
1
z 1
0.5
2 0.5 1 Real axis

2
0.5
1
2
ww (C)
z-plane Imaginary
w .Ea z 1
axis
2
syE
0.5
2 0.5
ngi 0.5 1
2 Real axis
nee
2
rin
(D)
z-plane Imaginary g.n
z 1
axis
2
et
0.5
2 0.5 2 Real axis

0.5
2

|EC-2019|
Key: (B)
Sol: It is given that H(z) is z-transform of a real-valued signal h(n).
1
P  z   H  z  H   and P  z  has 4 zeros we can say zeros of P  z  are, sum of zeros of H(z) and
z
1
zeros of H  
z
1 1 1 1
If z1   j is one zero then there must be a zero at z1*   j
2 2 2 2
*
* 1 1 1
Let z1 , z represent zeros of H(z) then the zeros of H   will be
1 and  
z z1  z1 
1 1
ww 
z1 1  j 1
2 2
1 i
w 1
  1 j
 z1 
*
.Ea
1 1
2 2
syE
So the 4 zeros of P(z) are   j  and 1  j or 0.707 45 and  2 45
In
ngi
z 1 0
0.5 0
nee
0.5
0.5 1 2 Re
rin
0
0 g.n
Even option D looks like similar but in option B, the zeros that are outside the unit circle have
et
real part 2, but we need 1.

|EC-2019|
12. Which one of the following options describes correctly the equilibrium band diagram at T= 300
K of a Silicon pnn+p++ configuration shown in the figure?
p n n p 
(A) (B)
EC EC
EF
EF
ww EV
w (C)
.Ea
EV
(D)
syE EC
EC
ngi EV
EF
nee EF
rin EV
Key: (C) g.n

Sol: Typical energy band diagram of P-N junction diode:
P-type
et
N-type
Ev
EF
Ec
 First of all of equilibrium, Fermi energy level ( E F ) is constant
 For P-type of semiconductor
N 
E F  E v  kT n  A   For N A  N V 
 NV 
 For pnn  p  configuration, Fermi-energy level (EF) is more closer to EV compare to Ec.

|EC-2019|
13. In the circuit shown, A and B are the inputs and F is the output. What is the functionality of the
circuit?
Vdd
ww F
w .Ea B
syE
A
(A) XOR (B)
ngiXNOR (C) Latch (D) SRAM cell
Key: (B)
Sol: NMOS behaves as ON switch for logic 1. nee
PMOS behaves as ON switch for logic 0.
rin
Vdd
g.n
P1
et
P2
N1 N2
A B

|EC-2019|
Let make the truth table
A B P1 N1 P2 N2 F Reasons
0 0 0 0 0 0 1 [ P1, P2 on Vdd is will be as F
0 1 1 1 0 0 0 [ N1 is ON, So F = A=0]
1 0 0 0 1 1 0 [ N2 IS ON, SO F = B= 0]
1 1 1 1 1 1 1 [ N1, N2 ON, So, F = A= B = 1]
So from the above truth table we can say F  A B
ww
14. The correct circuit representation of the structure shown in the figure is
B E C
w .Ea n
p
syE n
n
ngi n
nee
(A)
C
(B) rin C
g.n
B
B
et
E
(C) E (D)
C C
B B
E
E

|EC-2019|
Key: (D)
Sol: Aluminum metal in contact with a lightly doped n type silicon forms a non ohmic rectifying
contact because the trivalent aluminium easily dissolves into silicon and convert the part of n
type semiconductor into p type.
Ohmic Contacts
B E C
n
p
n
dissolved aluminium
ww n
w .Ea
Rectifying contact
behaves as a diode
B
Self dissolved aluminium
p 
syE C
n C
ngi
  E.daˆ  through a quarter-cylinder of height H (as shown in the figure)
15. What is the electric flux
nee
due to an infinitely long the line charge along the axis of the cylinder with a charge density of
Q? 0
rin
g.n
H Q et
4H HQ HQ H0
(A) (B) (C) (D)
Q0 4 0 0 4Q

|EC-2019|
Key: (B)
Sol: The total electric flux leaving the total cylinder of height “H” is
QH
  E.dA   0
 The electric through a quarter cylinder of height “H” is

 E.dA  QH
4 4 0
 Option (B) is correct.
16. Let Z be an exponential random variable with mean 1. That is, the cumulative distribution
ww
function of Z is given by
1  e x if x  0
Fz  x   
w  0
.Ea
if x  0
The Pr(Z > 2| Z > 1), rounded off to two decimal places, is equal to _________.
Key: (0.37)
Sol: Given,
syE
1  e x if x  0
Cumulative distribution function, Fz  x   
 0 ngi if x  0
e x ; x  0
 F'z  x   f z  x   
 0; x  0
 probabilitydensity function
nee
Where Z be an exponential R.V with mean ‘1’
rin
 z  2  Pr  z  2  z  1
 Pr 
 z 1
 Pr  z  1
 Using conditional probability g.n

Pr  z  2
Pr  z  1


 f  x  dx
2



e
0

x
dx et
 f  x  dx  e
x
.dx
1 1

 z  2   e  2 0  e  e
x 2 2
1
 Pr    
  
  0.37
 z  1   e  x  0  e  e
1 1
e
 1 
17. A linear Hamming code is used to map 4-bit messages to 7-bit codewords. The encoder
mapping is linear. If the message 0001 is mapped to the codeword 0000111, and the message
0011 is mapped to the codeword 1100110, then the message 0010 is mapped to
(A) 0010011 (B) 1111111 (C) 1111000 (D) 1100001

|EC-2019|
Key: (D)
Sol: Message (1)  0001
Message (2)  0011
0000111  Codeword (1)
1100110  Codeword (2)
Since it is a linear hamming code,
Message (1) + Message (2) results in codeword (1) + codeword (2)
 Addition of binary is logical XOR
 Message Codeword
0 0 01 0 0 0 0 111
 0 0 11  11 0 0 11 0
ww 0 010 11 0 0 0 0 1
w Message (3)
.Ea
Codeword (3)
18.
syE
In the circuit shown, the clock frequency, i.e., the frequency of the Clk signal, is 12 kHz. The
frequency of the signal at Q2 is __________ kHz.
ngi
nee
rin
D1 Q1 D2 Q2
Clk Q1 Clk g.n Q2

12 kHz
et
Key: (4)
Sol:
D1 Q1 D2 Q2
Clk Q1 Q2
12 kHz

|EC-2019|
D2  Q1  D1  Q1.Q2  Q2 Q1
  0 0 st Initially
1 clock
0 1 0 1
2nd clock
1 0 1 0
3rd clock
0 0 0 0
Q2Q1  00  01  10  00
It is a MOD-3 synchronous counter
f i 12kHz
So, f Q    4 kHz
2
3 3
19. A standard CMOS inverter is designed with equal rise and fall times n  p . If the width of  
ww the pMOS transistor in the inverter is increased, what would be the effect on the LOW noise
margin (NML) and the HIGH noise margin NMH?
w
Key: (A)
(A)
(C)
NML increases and NMH decrease
.Ea
No change in the noise margins
(B)
(D)
Both NML and NMH increase
NML decreases and NMH increases
Sol: Given, n  p for standard CMOS inverter

We know that, standard definition of noise margin
syE
NM L  VIL  VOLU
MH H  VOHU  VIH
ngi
Case(i): nee
n  p , let take VDD  5, VTN  VTP  0.8, VI  2.5
VIL  VTN 
3
 VDD  VTP  VTN   2.075 rin
VOLU 
1
8
 2VIH  VDD  VTN  VTP   0.45 g.n
 N M L
1
2
 VIL  VOLU  1.625 et
VOUH   2VIL  VDD  VTN  VTP   4.575
2
5
VIH  VTN   VDD  VTP  VTN   2.95
8
 N M H  1.625
Case (ii): n  p  Because width of PMOS increased
W W
   
 L P  L n
P 
 1, n  1, Let assume 0.8
Pn p

|EC-2019|
 n 
 
VIL  VTN 
VDD  VTP  VTN  2 p  1  2.216
 n   n 
  1  3 
p
 p   
    
VIH 1  n
 p   VDD   n   VTN  VTP 
VOLU     p 
 
2 n 
 p 
 
3.048  1.8  5  0.64  0.8

2  0.8
 0.404
ww  NM L  2.216  0.404  1.812  Increased 

1     
wV0UH  1   n  VIL  VDD   n  VTN  VTP 

2   p 
1
.Ea
 p 
 
  2.216 1.8  5  0.64  0.8  4.574



 
 2 n
VDD  VTP  VTN   p
syE 

VIH  VTN 
n
p
1
 
 3 n 1  ngi
 1
 0.8 
5  1.6  0.132
 p 
nee
0.2
 2.248  0.8  3.048 rin
 NM H  4.574  3.048
 1.526  decreased 
g.n
et

|EC-2019|
20. For an LTI system, the Bode plot for its gain is as illustrated in the figure shown. The number of
system poles Np and the number of system zeros NZ in the frequency range 1Hz  f  107 Hz is
Gain (dB)
100 20 dB dec
60 dB sec
40 dB dec
104 105 106 107

0
101 102 103  in Hz 
ww 40 dB dec
w .Ea
60 dB sec
(A) N p  4, N z  2 syE (B) N p  7, N z  4
(C) N p  6, N z  3
ngi (D) N p  5, N z  2
Key: (C)
Sol: From the given plot nee
N p  6, N z  3
rin
21. The figure shows the high- frequency C-V curve of a MOS capacitor (at T=300 K) with g.n
 ms  0 V and no oxide charges. The flat-band, inversion, and accumulation conditions are
represented, respectively, by the points.
C et
P Q
0 VG
(A) R,P,Q (B) Q,P,R (C) P,Q,R (D) Q,R,P

|EC-2019|
Key: (D)
capacitance maximumi.e, Cmax 
Sol:
C
P Q
capacitance minimumi.e, Cmin 
0 VG
ww At higher frequency Cmin minimum capacitance obtained in inversion-regime so point R-

belongs to inversion regime.
w Maximum capacitance obtained in accumulation regime so point p-line is accumulation regime.
.Ea
For m  0V, flat band occurs at VG  0V, so point  lies at flat-band regime.
22.
syE
Consider the two-port resistive network shown in the figure. When an excitation of 5V is
applied across Port 1, and Port 2 is shorted, the current through the short circuit at Port 2 is
measured to be 1 A (see (a) in the figure).
ngi
Now, if an excitation of 5 V is applied across port 2, and port 1 is shorted (see (b) in the figure),
what is the current through the short circuit at port 1?
1 2
nee
rin
Port 1 R Port 2
g.n
1 2 1
et 2
 1A  5V
5V
 R
? R 
a   b
(A) 1A (B) 2A (C) 2.5A (D) 0.5A

|EC-2019|
Key: (A)
Sol:
1 2 1 2

5V 
1A 5V
R I R 
figure a figure b
By reciprocity theorem, by referring (figure a),
V V1 I1 
ww We can say current I in (figure b) will be 1A.   k,

I
 
V2 I 2 
23.
w .Ea
Let Y (s) be the unit-step response of a causal system having a transfer function
G s 
3s
 s  1 s  3
That is, Y  s  
G s syE
. The forced response of the system is
(A) t
s
u  t   2e u  t   e 3t u  t  ngi (B) 2u  t 
(C) ut (D)

nee 2u  t   2e  t u  t   e 3t u  t 
rin
Key: (A)
Sol: Forced response is the response, due to external input signal
Y s 
G s
s

3s
s  s  1 s  3 g.n
1 2
 
s s 1 s  3

1
 y  t   u  t   2e  t u  t   e 3t u  t 
et
24. The baseband signal m(t) shown in the figure is phase-modulated to generate the PM signal
 t   cos  2fc t  km  t .
m t 
0 1 2 3 4 5 6 7 8 9
l in ms
1

|EC-2019|
The time t on the x-axis in the figure is in milliseconds. If the carrier frequency is
fc  50 kHz and k  10, the ratio of the minimum instantaneous frequency (in kHz) to the
maximum instantaneous frequency (in kHz) is_____ (rounded off to 2 decimal places).
Key: (0.75)
1 d  t 
Sol: Instantaneous frequency  fi  
2 dt
  t   2f c t  km  t 
1 d K dm
 fi   2f c t  km  t    f c 
2 dt 2 dt
K dm K dm
f imax  fc  ; f imin  f c 
2 dt max 2 dt min
dm dm
2  1
ww dt max dt min
f imax  50K   5  2  K  60K
w f imin   50K    5  1 K  45K

f imin
f imax

45K 3
  0.75
60K 4 .Ea
25. The value of the contour integral
syE
1 

2j 
1
 z   dz
2
ngi
z
Evaluated over the unit circle z  1 is__________. nee

Key: (0)
rin
1  z  1
g.n
2 2
2
1  1
... 1
2j   2j 
Sol:  z   dz  dz
z z2
 Singular point z=0; which lies inside unit circle z  1
 Using Cauchy’s generalization integration formula, we have
et
f z f n 1  z 0  
 z  z 
c
n
dz  2j
 n  1!
0
 z 2  12  '
z  1
2 2
 
  dz  2j  z 0 ; '  denotes first derivative
 z  0
2
C 1!
 2j  2  z 2  1  2z   z 0  2j0  0.
From 1 ,
1  z  1
2 2
2
1  1 1
0  0
2j  
 z   dz  
 z 2j  z  0  2
2j

|EC-2019|
Q. No. 26 - 55 Carry Two Marks Each
26. In the circuit shown, the threshold voltages of the pMOS Vtp   and nMOS  V tn  transistors
are both equal to 1 V. All the transistors have the same output resistance rds of 6 M. The
other parameters are listed below:
W
n Cox  60 A V 2 ;   5
 L nMOS
W
 p Cox  30 A V 2 ;    10
 L pMOS
 n and  p are the carrier mobilities, and Cox is the oxide capacitance per unit area. Ignoring the
effect of channel length modulation and body bias, the gain of the circuit is______ (rounded off
ww to 1 decimal place).
Vdd  4V
w .Ea
syE Vout
ngi Vin
nee
rin
Key: (-900)
w w
g.n
Sol: M 1 and M2 will have equal current flowing also since they are identical     
 VSG1  VSG 2 also, By KVL in loop

 L 1  L  2
Vdd  4V
et
4  VSG1  VSG 2
 VSG 1  VSG 2  2V  V
SG
current through M1 and M2
1
M1  M3
1 W
I      p Cox     VSG  VT 
2
Vout
2 L  V
SG 2
1 M2  M4
    30 10  2  1  150 A Vin
2
 
2
M1 and M3 are matched with same

|EC-2019|
W
  and same VSG hence,
 L
I M3  I M4  150A
For MOSFET M 4 ,
W
g m  2 n Cox ID
L
 2  60  5  150   300
 A 
A v  g m  rd || rd    300   6M 16M 
 V 
 A 
  300   3M   900 V V
 V 
ww
27.
w It is desired to find three-tap causal filter which gives zero signal as an output to and input of the
form
.Ea
 jn 
x  n   c1 exp  
 jn 
  c2 exp  ,
 2 
syE
 2 
Where c1 and c2 are arbitrary real numbers. The desired three-tap filter is given by
h  0  1, h 1  a,
h  n   0 for n  0 or n  2.
ngi
h  2  b and
nee
What are the values of the filter taps a and b if the output is y  n   0 for all n, when x[n] is as
given above?
rin
x n 
n0

yn   0
g.n
h  n   1,a, b
et
(A) a  1,b  1 (B) a  0,b  1
(C) a  1,b  1 (D) a  0,b  1
Key: (B)
Sol: It is given that
h  n   1,a, b 
 
j n
x  n   C1e
j
2
 C2e 2 n
 yn  0
 If h  n   1, a, b 
H  e j   1  ae  j  be  j2 

|EC-2019|
j  
 when x  n   C1e
n j n
2
 C2 e 2
then
exiression of y  n 

Since the input x (n) contain 2 frequencies  ,
2
Let evaluate H  e j  at f nil 2frequency
     
H  e j 2   1  ae
 j   j2 
 2 
 be  2 
 1  ae j 2  be j
 1  a  j    b  1
 1  b   j  a 
ww H  e j 2   1  b   ja
  j 
H  e j 2   H  e 2   1  b 
w  a2
2
 
.Ea
So the expression of y(n) is
syE
1   
12  j n 1  12 j n 2 
y  n   1  b   a 2  C1e  2  1  b   a 2  C 2 e  2
2  2 
   
if we want y  n   0, it means
k 1  b 
2
ngi
 a 2  0  from the above expression 
If we check each options
(A) a  1,b  1, then k  02  12  1  not correct 
nee
(B) a  0,b  1 then k  02  02  0  correct  rin
(C) a  1,b  1, then k  02  12  1 not correct  g.n
(D) a  0, b  1, then k  22  02  2  not correct 
So a = 0, b = 1, is correct.
et
28. Let h[n] be length-7 discrete-time finite impulse response filter, given by
h 0  4, h 1  3, h  2  2, h 3  1
h  1  3, h  2  2, h  3  1,
and h  n  is zero for n  4. A length-3 finite impulse response approximation g[n] of h[n] has
to be obtained such that
E  h,g    H  e j  G  e j  d
 2


|EC-2019|
   
is minimized, where H e j and G e j are the discrete-time Fourier transforms of h[n] and
g[n], respectively. For the filter that minimizes E(h,g), the value of 10g  1  g 1 , rounded off
to 2 decimal places, is_______.
Key: (–27)
Sol: It is given that
h  n    1,  2,  3, 4, 3, 2,1 .... 1
And it is also mentioned that g(n) is derived from h(n) having 3 samples, from the information
given in question we need g(1), and g(-1) so left
g  n   a, b, c  ...  2 
  
It is mentioned that
ww

E  h,g ]  H  e j   G  e jw  d, is minimised,
2
x
If h  n  and g  n  represent IDTFT of H  e j  ,G  e j 

w .Ea
then E  h,g   2 h  n   g  n  (by Parseval theorem)
2
h  n   H e 
g  n   G e 
j
j syE
h  n   g  n   H  e j   G  e j 
ngi
nee

H  e j   G  e j  d
1
energy of  h  n   g  n   
2

2 
rin
 2
 2 energy of  h  n   g  n     H e   G e 
j j
d
g.n

 
 E  h,g    H e   G e  d  2   h  n   g  n 
2 2
j j
x
We want to minimize E (h,g)

Using equation (1) and equation (2) we can say
n 
et
h  n   g  n    1,  2,  3  a, 4  b, 3  c, 2,1
 E  h,g   2 h  n   g  n   2  h  n   g  n 
2 2
 all elements are real, mod does not have significance
 E  h,g   2  1   2    3  a    4  b    3  c   22  12 
2 2 2 2 2
 
 2 10   3  a    4  b    3  1 
2 2 2
 
To have minimum E (h,g), we need

|EC-2019|
3  a  0  a  3
4b0 b 4
3c  0 c  3
 g  n   a, b, c   3, 4, 3
     
So10g  1  g 1  10a  c  10  3  3  30  3  27
29. Consider the line integral   xdy  ydx .

C
The integral being taken in a counterclockwise
direction over the closed curve C that forms the boundary of the region R shown in the figure
below. The region R is the area enclosed by the union of a 2  3 rectangle and a semi-circle of
radius 1. The line integral
y evaluates to
ww 3
C
w .Ea 2 R
1
syE
0
ngi 1 2 3 4 5 x
(A) 16  2  (B) 6 2 (C)

nee
12   (D) 8
Key: (C)
  x dy  ydx      y dx  x dy ; where C is a
rin
Sol:
C C
g.n
et
Closed figure formed by rectangle and a semi circle of radius 1.
y
Using Green’s theorem, we have
  C
  y dx  x dy   1  1 dx dy
C     R 
3
 M N

 2   dx dy  Area of the region R. 2 2
R
R
 2  Area of rectangle  Arae of semi  circle 

1
 
 2  3  2    12  
1 3
 2 
 2  6   2  12    1 2 3 4 5 x

|EC-2019|
30. A rectangular waveguide of width w and height h has cut-off frequencies for TE10 and TE11
modes in the ratio 1:2. The aspect ratio w/h, rounded off to two decimal places, is_______.
Key: (1.732)
C
Sol: Cut off frequency of TE10 mod e is f C10 
2W
2
C W
Cutoff frequency of TE11 mod e is fC11  12   
2W  h 
Given
f C10

1

 C 2W  
1
f C11 2  C  2 W
2 2
  1  
 2W   h 
ww W
 12     4
 h 
w 
W
h
 3
 Aspect ratio= .Ea

W
 3  1.732.
31.
h
syE
A Germanium sample of dimensions 1cm 1 cm is illuminated with a 20 mW, 600 nm laser
ngi
light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less
Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light,
absorbed in the Germanium layer, and one-third is transmitted through the other side of the
nee
one-third of the power is reflected form the silicon dioxide- Germanium interface, one-third is
sample. If the absorption coefficient of Germanium at 600 nm is 3  104 cm1 and the bandgap is
0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is _____ m.
rin
20mW,600 nm
g.n
1cm
1cm
et
Silicon dioxide 100 nm
Germanium T

|EC-2019|
Key: (0.231)
Sol: 0  P  0   10mW
20mW,600 nm
T  P  T   5mW
  3  104 cm 1  3  106 m 1 1cm
P  T   P  0  e T
20 cm
1  P 0 
1cm
T n  5 mW
  P  T  
1  10  5 mW Silicon dioxide 100 nm

T n 
3  10 6
 5
6 Germanium T
 0.23  10 m  0.231 m
ww 5 mW
32.
w In the circuit shown, the breakdown voltage and the maximum current of the Zener diode are 20
.Ea
V and 60 mA, respectively. The values of R1 and R L are 200  and 1 k, respectively. What is
the range of Vi that will maintain the Zener diode in the ‘n’ state?
syE R1

ngi
Vi 
nee RL
rin
g.n
Key: (A)
(A)
V
24 V to 36V
R1
(B) 22 V to 34 V (C) 20 V to 28 V
et (D) 18 V to 24
Sol:
IL
IR IR

Vi  RL
20  0
IL  mA  20mA
1

|EC-2019|
IR  IZ  IL
Vi min  I R min R 1  VZ
I R min  0  I 2  
I z  min   0  20mA.
Vi min  20  103  100  2  4V  20v  24v
Vi max  I R max R 1  Vz
I R max  I z max  I L  60 mA  20mA  80mA.
Vi max  80  103  200  20  16V  20V  36V
 Vi min  24V; Vi max  36V
33. A single bit, equally likely to be 0 and 1, is to be sent across an additive white Gaussian noise
(AWGN) channel with power spectral density N0 2. Binary signaling, with
ww 0  p  t  and 1  q  t  , is used for the transmission, along with an optimal receiver that
minimizes the bit-error probability.
w Let 1  t  , 2  t  form and orthonormal signal set.
.Ea
If we choose p  t   1  t  and q  t   1  t  , we would obtain a certain bit-error probability Pb .
If we keep p  t   1  t  , but take q  t   E 2  t  , for what value of E would we obtain the

same bit-error probability Pb ? syE
Key: (A)
(A) 3 (B)
ngi1 (C) 2 (D) 0
Sol: Case 1:
P  t   1  t  , q  t   1  t 
2  t 
d12  2units
nee
rin
1  t 

qt

pt
1  t 
g.n
2  t 
et
Case 2:
P  t   1  t  q  t   E 2  t  2  t 
qt

E d12  E  1
 Q1  t 
1 Pt
For same probability of error distance

between points should be same for both cases
 E 1  2 E  3

|EC-2019|
34. Consider a six-point decimation-in-time Fast Fourier Transform (FFT) algorithm, for which the
 j2 
signal-flow graph corresponding to X[1] is shown in the figure. Let W6  exp    . In the
 6 
figure, what should be the values of the coefficients a1 ,a 2, a 3 in terms of W6 so that X[1] is
obtained correctly ?
x  0 X 0
x 3 X 1
a1
x 1 X  2
a2
ww x  4 a3 X  3
w .Ea x  2
X  4
x  5
syE 1
X  5
(A) a1  1,a 2  W62 ,a 3  W6 (B) ngi a1  1,a 2  W62 , a 3  W6
Key: (D)
(C) a1  1,a 2  W6 ,a 3  W62 (D)
nee a1  1,a 2  W6 ,a 3  W62
Sol: In this case we are supposed to obtain the FFT coefficient X 1 using DIT algorithm. rin
We are supposed to obtain the coefficient a1 , a 2 , a 3
g.n
The given butterfly structure is a standard structure where
a1  W60  1
a 2  W61  W6
et
a 3  W62
35. The quantum efficiency   and responsivity  R  at a wavelength   in m  in a p-i-n photo

detector are related by
   1.24   1.24
(A) R (B) R (C) R (D) R
1.24  1.24   
Key: (A)
e es  
Sol: Responsivity  R     A w
hv hc 1.24

|EC-2019|
36. Consider a long-channel MOSFET with a channel length 1m and width 10 m. The device
parameters are acceptor concentration N A  5  1016 cm3 , electron mobility
7
n  800 cm V  s, 2
oxide capacitance/area Cox  3.45 10 F cm , 2
threshold voltage
VT  0.7V. The drain saturation current  I Dsat  for a gate voltage of 5V is _______mA
(rounded off to two decimal places). 0  8.854 1014 F cm, Si  11.9
Key: (25.51)
Sol: Given data; L  1m, W  10m
cm 2
N A  5  1016 cm 3 ,  n  800
v  sec
Cox  3.45  107 F cm, VT  0.7V
0  8.854  1014 F cm, si  11.9
ww VG  5V
1 W
w IDsat   n Cox  VG  VT 
2
2 L
1 10
.Ea
  800  3.45  107  5  0.7   0.0255A  25.5162 mA  25.51mA
2 1
2
37. syE
A voice signal m (t) is in the frequency range 5 kHz to 15 kHz. The signal is amplitude
modulated to generate an AM signal f  t   A 1  m  t   cos 2fc t, where f c  600 kHz.
ngi
The Am signal f(t) is to be digitized and archived. This is done by first sampling f(t) at 1.2 times
the Nyquist frequency, and then quantizing each sample using a 256-level quantizer. Finally,
each quantized sample is binary coded using K bits, where K is the minimum number of bits
nee
required for the encoding. The rate, in Megabits per second (rounded off to 2 decimal places),
of the resulting stream of coded bits is _______Mbps.
Key: (0.192) rin
Sol:
m f  g.n
et
f
5kHz 15kHz
Modulation done using AM
AM signal
605K 600K 615K  f

|EC-2019|
Now AM signal id done sampling

2f 1 2f
 fs  1
n n 1
Here f H  615K, f L  605 K.
fH
1 n  : B  fH  fL
B
n  61.5, n  61.
2  615
fs 
61
Minimum sampling is 20 K.
R b  1.2fs  8  0.192M bit/s
ww
38. A random variable X takes values -1 and +1 with probabilities 0.2 and 0.8, respectively. It is
transmitted across a channel which adds noise N, so that the random variable at the channel
output is Y = X +N. The noise N is independent of X, and is uniformly distributed over the
w interval [-2, 2]. The receiver makes a decision

1, if Y  
X
1, if Y   .Ea
syE
Where the threshold   1,1 is chosen so as to minimize the probability of error Pr  X  X  .
 
Key: (0.1)
ngi
The minimum probability of error, rounded off to 1 decimal place, is _______.
Sol:
When X  1is transmitted
P  X  1  0.2
f y |X 1 nee
14 rin
g.n
3 1 y et
1
Pe1   0.2    1  Vth  Vth
 
4
When X  1is trasmitted P  X  1  0.8
 Vth  f y |X 1
y
1 3

|EC-2019|
1
Pe1   0.8     Vth  1
4
Pe 
 0.2 11  Vth    0.8 1 Vth  1
4
1  0.6Vth
Pe 
4
1  Vth  1
 Pemin when Vth  1
1   0.6  1 0.4
 Pemin    0.1
4 4
39. Let the state-space representation of an LTI system be x  t   Ax  t   Bu  t  ,
ww y  t   Cx  t   d u  t  where A,B,C are matrices, d is a scalar, u(t) is the input to the system,
and y(t) is its output. Let B  0 0 1 and d  0. Which one of the following options for A and
T
w C will ensure that the transfer function of this LTI system is H  s  
0 1 0 .Ea
1
s  3s  2s  1
3 2
?
(A) A   0 0 1  and C  1 0 0
 1 2 3 syE
(B)
0 1 0
A   0 0 1  and C   0 0 1 ngi
 1 2 3
0 1 0
nee
(C) A   0 0 1  and C   0 0 1
rin
 3 2 1
0 1 0 g.n
(D) A   0 0 1  and C  1 0 0
 3 2 1 et
Key: (B)
Sol: Given,
C matrix start form right to left with same sign.
1 Y s
H  S  .
s  3s  2s  1 V  s 
3 2
A matrix element start from right to left and take opposite sign.
(trick valid for canonical form). Controllable.
0 1 0
A   0 0 1  and C  0 0 1
 1 2 3

|EC-2019|
40. Two identical copper wires W1and W2 , placed in parallel as shown in the figure, carry
currents I and 2I, respectively, in opposite directions. If the two wires are separated by a
distance of 4r, then the magnitude of the magnetic field B between the wires at a distance r
form W1 is
W1
W2
ww (A)
5 0 I
(B)
0I
(C)
6 0 I
(D)
 02 I 2
w
Key: (A)
Sol:
6 r
1 .Ea I
6 r 5 r 2 r 2
B1
syE B2
r
ngi
nee
3r
2
2I rin
Between the wires 1 and 2 the B  fields due to I and 2I will gets added up.
 The B  field due to 1 
g.n
the 1 is



I
at a distance 'r ' from from  B1  0  1
2r et
The B  field due to 2 
at a dis tan ce "3r" form   0  2I 
 B2    2
the 2 as shown in  2  3r 
figure is 
 The total B  field B  B1  B2
0 I 1 2 
 
2  r 3r 
5 I
B  0 b m 2 .
6r

|EC-2019|
41. In the circuit shown, VS is a 10V square wave of period, T=4 ms with R  500 and
C  10 F. The capacitor is initially uncharged at t = 0, and the diode is assumed to be ideal.
The voltage across the capacitor  Vc  at 3 ms is equal to ______volts (rounded off to one
decimal place).
R
10

0
T T
2 Vs
10
 C Vc
t0 
ww
Key: (3.31)
Sol: Given: T  4ms, R  500, C  10F

w  RC 500  10  106 sec5ms

T 4ms
2

2 .Ea
 2ms
V1
syE R

10V
ngi Vs
nee
C
0
T T  Vc

2
10V
rin 
For positive half cycle, diode will be forward biased and capacitor start to charge g.n
 t
  
2ms
VC  VC    1  e RC  10 1  e 5ms 


 
2
 


et
10 1  e 5   4.51V   VC  3.31V
 
1
42. Consider a causal second-order system with the transfer function G  s  
1  2s  s 2
1
With a unit-step R  s  
as an input. Let C(s) be the corresponding output. The time taken by
s
the system output C(t) to reach 94% of its steady-state value limc  t  , rounded off to two
t 
decimal places, is
(A) 5.25 (B) 2.81 (C) 4.50 (D) 3.89

|EC-2019|
Key: (C)
1
Sol: Given, G  s  
1  2s  s 2
1
 C s   G s  R s  
s  s  1
2
C  t  1  e  t  te  t
Let’s check option one by one

Option (A)
0.94 1  e5.25  5.25 e5.25  0.89
(Hence option A is wrong)
Option (C)
ww 0.94  1  e4.50  4.50e4.50  0.94
43.
w (Hence option (C) is correct)
.Ea
The RC circuit shown below has a variable resistance R(t) given by the following expression:
 t
R  t   R 0  t   for 0  t  T
 T syE
ngi
Where R 0  1, C  1F. We are also given that T  3 R 0C and the source voltage is VS  1V. If
the current at time t = 0 is 1A, then the current I(t), in amperes, at time t = T/2
is_________(rounded off to 2 decimal places).
It
R t
nee
rin

C g.n
Vs 
t0
et
Key: (0.10)
Sol:  For t  0, the network can be drawn as
R t
I t 
Vs 1V  C


|EC-2019|
  R o  1, C  1F, T  3R o C  given 

 t
 R  t   R o 1   l 0  t  T
 T
 t   t
 R o 1    R o 1    1  t / 3 T  3R o C  3
 3R o C   3
 R  0   R o  1
 It is also given that I  o   1A, if we draw the network at t=0, it becomes
R 01
I t 
ww 1 


 VC0 
w .Ea
 I  0 
1  Vc  0 
R  0
 1 syE
1  VC  0 
ngi
1
 1  1  VC  0   VC  0   0V.
 t  , capacitor will be open circuit, VC     1V

nee
 t
   RC  R  t  C  R o 1  
 3  rin
 VC  t  1   0  1 e 1 t /3
t
g.n
T  
 T/2 
 
VC   1  e  1 T /6  1  e  13/6 
2
 1.5 
 3/ 2 
 T  3 et
 
1  e  0.5 
1  e 3  0.95
Vs  t   VC  t 
 It 
R t
T T   t 
Vs    VC    R  t   1  3  
T
I    
2  2   1  0.95  0.10    
2 T 0.5  T T 3 
R   R   1   1   0.5
2  2 6 6 

|EC-2019|
44. In an ideal p-n junction with an ideality factor of 1 at T=300 K, the magnitude of the reverse-
bias voltage required to reach 75% of its reverse saturation current, rounded off to 2 decimal
places, is ______mV.
k  1.38 1023 JK 1 , h  6.625 1034 J  s, q  1.602 1019 C 
Key: (35.87)
  V   3   V  
Sol: I  Io exp  R   1  Io  Io exp  R   1
  VT   4   VT  
 V  3 1
exp  R   1 
 T 
V 4 4
1 1
VR  VT n    25.9  n   mV
4 4
ww VR  35.87mV
45.
w The dispersion equation of a waveguide, which relates the wave number k to the frequency
, is
.Ea
k    1 c  2  02
syE
Where the speed of light c  3 108 m s, and 0 is a constant. If the group velocity is
2  108 m s, then the phase velocity is
(A) 2 108 m s (B) ngi 1.5  108 m s (C) 3  108 m s (D)
Key: (D)
4.5  108 m s
nee
Sol: Given, C  3  108 m/sec
rin
Group velocity  g  2  108 m/sec
 p  g  C2 g.n
 Phase velocity  p 
C2  3  10 
g

2 10
8
8
 4.5  108 m/sec
2
et
46. The state transition diagram for the circuit shown is
D Q 1
Q 0
A
CLK

|EC-2019|
(A) A 0 A 0 (B) A 0 A 0
A 1 A 1
Q0 Q1 Q0 Q1
A 1 A 1
(C) (D)
A 0 A 0 A 1 A 0
A 0
A 1
Q0 Q0 Q1
Q1
A 1 A 1
ww
Key: (B)
Sol: The given circuit is
w .Ea D Q 1
syE Q 0
CLK
ngi Let Q  1
A
Let Q  0
 When Q  0, Q  1 and A  0, nee
 When Q  1, Q  0 and A  0,
then Y  Q  1, so D  QY  0.1  0  1
after1clock Q  1 
after1clock Q   1 rin
then Y  Q  0, so D  QY 1.0  0  1
 When Q  0, Q  1 and A  1,  When Q  1, Q  0 and A  1,

g.n
then Y  Q  1, so D  QY  0.0 1
after1clock Q  1 
then Y  Q  1, so D  QY 1.1  0
after1clock Q   0
et A 0
A 0
Q0 Q1 Q0 Q1
A 1 A 1
By combining both we can draw a single state diagram
A 0
A 1 A 0
Q0 Q1
A 1

|EC-2019|
k
47. Consider a unity feedback system, as in the figure shown, with an integral compensator and
s
open-loop transfer function
1
G s 
s  3s  2
2
Where K>0. The positive value of K for which there are exactly two poles of the unity
feedback system on the j axis is equal to ______ (rounded off to two decimal places).
 K
Xs  G s  Ys
 s
ww
w
Key: (6)
.Ea
Sol: Given, A unity feedback system as shown in figure

Xs

K
s syE 1
s 3s  2
2
Ys
ngi
CE  s  s 2  3s  2   k  0
nee
 s3  3s 2  2  k  0 rin
s3 1 2
g.n
s2
s1
3
6k
3
k
0
If this row will be zero then
two poles will be on j axis et
s0 k 0
6K 0  K 6
3s 2  6  0  s 2  2  0
Lets cross check :
s   j2 Two poles on j
axis

|EC-2019|
48. Consider a differentiable function f  x  on the set of real numbers such that f  1  0 and
f '  x   2. Given these conditions, which one of the following inequalities is necessarily true
for all x   2, 2 ?
1 1
(A) f x  2 x 1 (B) f x  2 x (C) f x  x 1 (D) f x  x
2 2
Key: (A)
Sol: Method-I:
Option (A) satisfy the given conditions  f  1  0 & f '  x   2

Method-II:
ww Given that f '  x   2; f  1  0
 2  f '  x   2; where x   2, 2

w .Ea
Using Lagrange's Mean Value Theorem over  1, 2 , we have
f  2   f  1 f b  f a  
 2  f '  x   2   2 
f  2  0
syE 2   1

 2  f 'c 
 ba


 2
3
  6  f  2  6
2
ngi
... 2 
 Option (A) satisfies equation  2  . nee
rin
49. Consider the homogeneous ordinary differential equation x
d2 y
dx 2
 3x
dy
dx
 3y  0, x  0 2
g.n
With y  x  as a general solution. Given that y 1  1 and y  2   14 the value of y 1.5  ,
(rounded off to two decimal places), is _________.

et
Key: (5.25)
Sol: Given D.E
d2 y dy
x2 2
 3x  3y  0, ...1
dx dx
x  0 & y 1  1 and y  2   14
Clearly equation(1) is Cauchy-Euler Linear Differential Equation.

Equation (1) can be written as
 x 2 D2  3xD  3 y  0

|EC-2019|
d
Let xD  ; x 2 D 2      1 ; where   and x  e z
dz
    1  3  3 y  0    4  3 y  0
  2
Consider the A.E is 2  4  3  0     3   1  0

   1,3  Roots are real & distinct
 The solution is, y  C1e1.z  C 2e3.z  y  C1x  C 2 x 3 ...  2 

 x  ez 
Given, y  1 at x  1  1  C1  C2  (2)  ...  3
&y  14 at x  2  14  2C1  8C2   2 
 C1  4C2  7 ... 4 
ww Solving (3) and (4) , we have

C1  C2 1
w C1  4C2  7
.Ea
3C2  6  C2  2  C1  1
From (2),
y   1 x   2  x 3 syE
 y 1.5   11.5  2 1.5
 y 1.5  5.25
ngi 3
nee
50. Let a random process Y(t) be described as Y  t   h  t   X  t   Z  t  , where X(t) is a white
rin
noise process with power spectral density SX  f   5W / Hz. The filter h(t) has a magnitude
response given by H  f   0.5 for  5  f  5, and zero elsewhere. Z(t) is a stationary random
g.n
process, uncorrelated with X(t), with power spectral density as shown in the figure. et
1 Sz f W/Hz
5 5 f Hz
The power in Y(t), in watts, is equal to ___________________W. (rounded off to two

decimal places).

|EC-2019|
Key: (17.5)
 Power in 
Sol: Power in y  t       Power in Z  t  
h  t   X  t 
 Z  t  & X  t  uncorrelated 
X t  ht
h  t   X t 
white noise

Power in h  t   X  t    H  f  SXX  f df
2

ww
 5
 H f   5df    0.25.5 df
2

 5 S z f 
 10 1.25   12.5W
w .Ea
Power in S2  f   Area under power spectral density
1
Pz t 
1
   10 1  5W
2 syE
∴ Power in y(t) = 12.5 + 5 = 17.5W
ngi 5 5 f
51. In the circuits shown, the threshold voltage of each nMOS transistor is 0.6V. Ignoring the
nee
effect of channel length modulation and body bias, the values of Vout1 and Vout2, respectively, in
volts, are 3V
rin
g.n
3V 

3V 

Vout1
et
3V 3V 3V
Vout2
3V 

(A) 2.4 and 1.2 (B) 2.4 and 2.4 (C) 1.8 and 1.2 (D) 1.8 and 2.4

|EC-2019|
Key: (D)
Sol:
3V
V1 30.62.4V

3V  Vout1 2.40.61.8V
3V 

3V 3V 3V
Vout2 30.62.4V
ww 3V 
w  V1
.Ea
30.6
 2.4V
V2
30.6
 2.4V
52. syE
A CMOS inverter, designed to have a mid-point voltage VI equal to half of Vdd , as shown in
the figure, has the following parameters:
ngi
Vdd  3V
 n Cox  100A/V 2 ; Vtn  0.7 Vfor nMOS nee
 p Cox  40A/V ; Vtp  0.9V for pMOS
2
rin
Vout
g.n
Vdd
et
Vdd
2
Vdd Vdd Vin

Vi 
2
W W
The ratio of   to   is equal to _________. (rounded off to three decimal places).
 L n  L p

|EC-2019|
Key: (0.225)
VDD
Sol: At Vi  , both the MOSFETs are in saturation and both MOSFETs have the same current.
2
 Vdd 
 2  VDD
 
1 W
   100A / V 2    1.5  0.7 
2
2  L n
1 W
    40A / V 2     3  1.5  0.9 
2
Vin Vout
2  L p
W
 
 L  n  40  0.6 
2
ww W
 
 L p

100  0.8 
2
 0.225
53.
w .Ea
In the circuit shown, if v  t   2sin 1000t  volts, R  1k, and C  1F, then the steady-state
current i(t), in milliamperes (mA) is

i t  syE
ngi
v t 

R
C
nee R
 C C rin
g.n
(A) sin 1000t   cos 1000t  (B)
R et
sin 1000t   3cos 1000t 
(C) 2 sin 1000t   2cos 1000t  (D) 3 sin 1000t   cos 1000t 
Key: (D)
Sol:  It is given that V  t   2sin100t  V  2 0 A
R  1k, C  1F C
 By observity the circuit we can say R R
V C
I C
Z
B
R

|EC-2019|
 When each element of star network are same then its corresponding delta element are
same and it becomes
R R
C
C Cx
C
B
R
1
Z  3Z*, but in capacitor case Z  , So if the capacitor of star network are C each
jC
ww then in its delta equivalent it becomes C / 3  Cx A

I
w  The network can be further redrawn as
.Ea 1 R / jwC x R Z
Z
Where Z  R 
j C x R  1
jC x

syE
1  jRC x
Z I2

1  jR
R

3R

3R
C 3  jRC 3  j ngi B
I1
 I  I1  I2  
3
V V

20

20 nee
3 j
Z 2Z  3R/3  j  65R / 3  j
3 j 3 0  1 90 rin

3R
 2 0 1 0 
R
1 0  
R
 3 0 1 90mA  12  1000   3sin 1000t  sin 1000t  90  g.n
54. The block diagram of a system is illustrated in the figure shown, where X(s) is the input and
et
Y s
Y(s) is the output. The transfer function H  s   is
X s
  s
X s  
1 Y s
s
 1
s

|EC-2019|
s2  1 s2  1
(A) H s  (B) H s 
2s 2  1 s3  2s 2  s  1
s 1 s2  1
(C) H s  (D) H s 
s  s 1
2
s  s2  s  1
3
Key: (B)
Sol: Given block diagram
  s
X s 
1 Y s
s
ww  1
s
w It can be reduced to .Ea

 
syE
Xs
 ngi s
1
s
1
s
Ys
nee
s 2
 1 rin
Y s
s
 1 1

2
s 2
  s 2

s
1 s  s 2  1
2
g.n
X s 


1
s
s  1
2
s
 2
s
s2  1 s2  1
s


s 2  1
s2
et
 2 3 
s  s  s  s 2  1 s3  2s 2  s  1
Hence, the transfer function H  s  

Y s 
is
s 2
 1
X s  s 3
 2s 2  s  1

|EC-2019|
55. In the circuit shown, V1  0 and V2  Vdd . The other relevant parameters are mentioned in the
figure. Ignoring the effect of channel length modulation and the body effect, the value of Iout is
____mA (rounded off to one decimal place).
Vdd
W/L 10 W/L 10 W/L  40
Vdd Iout
W/L 5 W/L 5
ww
V1 V2
1mA
w .Ea
W/L  2
syE W/L  3
ngi
Key: (6)
Sol:
Vdd
nee
W/L 10 W/L 10
M6
rin
W/L  40
M4
g.n
Vdd
V1 W/L 5 W/L 5 V2
Iout
M7
et
1mA M3 M5
I2
W/L  2 W/L  3
M1 M2

|EC-2019|
M1 and M2 have the same Vgs

 Current flows in the ratio of W/L
1mA 
3
 I2     1.5mA
2
V1  0; Therefore M3 is in cut off and entire I 2 current flows through M5 branch.
 I5  1.5mA
I5 
 40 
Iout    Ratio of W L
 10 
 Iout  4  1.5mA  6mA
ww
w .Ea
syE
ngi
nee
rin
g.n
et

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Q. No. 1 - 5 Carry One Mark Each

w  The number of different orders in which P, Q and T arranged = 3 × 2 × 1= 6

 Machine 1, 1 hour work 

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Q. No. 6 - 10 Carry Two Marks Each

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Client paying for both P and Q = USD 200/hr

ww P,Q R,T S P,Q R S

nee Manager Teller Teller

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Mathew Rahul Seema Lohith

Panel (b) Panel (c)

(A) 33.43 (B) 35.43 (C) 34.43 (D) 30.43

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ww Number of male literates in 2011  50 

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ELECTRONICS & COMMUNICATION ENGINEERING

Q. No. 1 to 25 Carry One Mark Each

1. Radiation resistance of a small dipole current element of length l at a frequency of 3 GHz is 3

(A) n z (B) cos(z) (C) e1/z

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Where, u  x, y   cos x cosh y; v  x, y    sin x sinh y

u x   sin x.cosh y vx   cos x.sinh y

w Consider a strip parallel to Y-axis. Then

0 sin x.dx

   cosx 0   cos   cos0   1  1  2

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Case (i) For +ve half cycle diode is reverse bias:

VL  V s  10V. So, output waveform is

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 Eigen values of A are   2,1,3, 2  diagonal elements 

ww  The number of distinct eigen values of the matrix = 3.

For n = –1 and n = +1, respectively, are

 xy  c  represents family of hyperbolas.

For n =1; we have

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 ydy  xdx  variable separable D.E

 c  ; which represents family of circles

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Its fundamental frequency 0

9. If X and Y are random variables such that E  2X  Y   0 and E  X  2Y   33, the

3E  y   66  E  y   22 syE

(A) 0 and 1 (B) Hi  Z and D

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Key: (D) Vdd

2 0.5 0.5 2 Real axis

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2 0.5 1 Real axis

2 0.5 2 Real axis

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Key: (C) g.n

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(A) XOR (B)

ngiXNOR (C) Latch (D) SRAM cell

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Let make the truth table

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 The electric through a quarter cylinder of height “H” is

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