Resistivity by Four Probe Method AIM “a determine the resstivty of semiconductors by Four probe Method. APPARATUS ‘Te experimental se up consists of probe arangement, sample , even 0-200°C, eanstant, current generator, oven power supp} and dg! panel meter(measuring voltage and curren). ‘messurement of rest sf semiconductor. ‘ur metiod is employed when the rample i the form of thin wafer, such es thin ‘semiconductor matenal deposited on » mostra” The sample i rllmeter in size and ving a thickness w. It consists of four probe Sronged near n'a svaight ine a equal dstrce S from exch other, A contort curenis passe trough the two probes and the potent ‘rep V acres the midcle two probes 's measured. An oven Is provided wien a heater to heat the sample so that Behavior ef the same I Sree onset sent power pry Pot Fo ‘The ngure shows th arangemants of four proses that measure voltage (V) and suplycurent (A) tothe surface of he ysl, ‘THEORY At canto temperature, the rstance, of «conductor i proportional o Rs ngth Land avery propetonl ta re of ees z gepk Pa here 9 isthe rsistwty of the conductor dts nis ohmmeter: | semiconcict os electrical cndvtuy Intermediate in meant between that of 2 concuctr and Ingulbtor Semiconductor eters rom ‘metas in ther characterise property of decreasing elecvclrsistty wits nceasng trperatre ‘Acearcing to band theory, he anaray levels of semiconductors canbe groupes it two 63Ne, valence band andthe conduction band. Inthe Dresence of an extemal elacre fd Iti elctons in te valence Band tat can move treeh, thereby response forthe elacrcal conduaty of semiconductors. In ease of intinsicsemiconductrs, the Fermi level las in between the conduction band minimum and and remains unoceupid. Se eanducton is not possible at OK, and resistence i infinte. As lempereure increases, the secupancy of ‘conduction band goss up, thereby resting in decreate of electri reitvy of semiconductor. Reaitvty of semiconductor by four probe method 1 The resatity of materi uniform inthe area of measurement. 2. there s 3 minority carer njeso into the semiconductor by te current-carrying electrodes most of the carrer recombine near ‘lcrodes so thatthe effect on conducts negli 13. The surface on whien tha proses rest at wth no surface leakage. 4. The four probes usd for resistivity measurement contact surace at pins that le na staght Ine. 5. The dlameter ofthe contact between metalic arbes andthe semiconductor shout be small compared tothe distance between the 6. Me boundary between the current carrying sectrodes and te bulk material is hegpherical and smal in diameter. 7. The surface of semiconduor materiel may be ether canting and non-conducting. A conducting Boundey sone on which materi of ‘much ler esishwty than semiconductor has Been plated. &narecanducing boundory Is pradueed when the surface ofthe semiconcutor Ineontact wth neuator Fg: 2 show te ressivty probes ona of mater. Ifthe side boundries are adequstely fr frm the probes he de may be considered tobe ideal toa sie, Forts case ofa sce of thickness w ang the resist f computed 35‘The function, fw) is a disor for computing resintivty which depends onthe valu of w and S We assume thatthe sizeof se metal tip sinfitesval and sample thickness s greeter than the dstance between the probes, actxad oO where v= the potenti ference beween ner probes vot. {= urtene tough the outer par of probes in ampere 'S~ Spacing between the probes in meter ‘Temperature depandence ofr ‘otal letra conductivity of» semiconductors the sum ofthe conducive ofthe valice band and conduction bane cariers. Resstty ‘5 the recprocl of conduct and its temperature dependence is given By 5, Aoplt ORT Where Eg - band gap of he matorat T= Temperature kelun K ~Botzmann constant K~ 8.6e10-5 eviK ‘Tha rast of @ semiconductor rises exoonentialy on ecreasng the temperatre, Applications 1. Remote sensing areas 3 Induction arcing process 5. Chorateraation af ust cls paar plates