TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2$C1815 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. 2SC1815 + High Voltage and High Current, + VCEO=50V (Min.), I¢=150mA (Max.) + Excellent hyy Linearity brEQa) hpE (i¢=0.1mA)/ hpg (i¢=2mA)=0.95 (Typ.) + Low Noi NF=14B (Typ.) at f= 1kHz Complementary to 281015 (0, Y, GR class) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL | RATING | UNIT Collector-Base Voltage VoBo 60 Vv Collector Emitter Voltage VoBo 50 Vv Emitter-Base Voltage VEBO 5 Vv Collector Current To 150 mA Base Current Ip 50 mA Collector Power Dissipation Po. 400 mW Junction Temperature Ty 125 °C Storage Temperature Range Tag —55~125 | °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC syMBoL| TEST CONDITION —_| man. | Typ. |max.| uNTT| Collector Cutoff Gurrent Toso _| Vop=60V, In=0 — [= [oa | a Emitter Cut off Current Ippo _| VEB=5V, Io=0 — [= [oa | a bred) =6V, Ig=: Von=6V, Ig=2mA mo | — | 700 DC Current Gain (Note) | “CE c hppa | Vo=6V. Io=150mA 25_| 100 | — Collector-Emitter Saturation Voltage Vexisat) | 1c=100mA, Tp=10mA, — | 01 | 026} v Base-Emitter Saturation Voltage | Vipr(sat) | 1¢=100mA, Ip=10mA — [= [aot v ‘Transition Frequency fp 0 | — ME Collector Ouput Capacitance Cob — [20 [35 | pF Base Intrinsie Resistance np — | 0/-—|ao ise Fi Vor -6V, I¢=0.1mA, Noise Figure NB | ge thtte, Re=10%00 ~ {ee} Note: bpg Classification 0; 70-140 Y:120~240 GR: 200~400 BL: 350-700 sciess2 TOSitaeSemiendue: Relay Handbook © TOHImA « conmmaly wong fo mprove fhe Guill) ond te relabiny of Wy produce, Nevanhaen_ semconducc, dances Ty general cn Tent fs radi ipcmene “anda of ‘sey, sedge Situations in which meltuncton of falure Ss TORN Ae eee aes Sparating ranger at tat forth in the Bont recone products specthetions: Ao Bleae Kegp i mind the precautions and condivone ee¢ for i the 7997-04-10 EITOSHIBA 2SC1815 Ie ~ Vor hee = Io ‘COMMON EMITTER 601 tana5t ‘COMMON EMITTER —" voe=8v DO CURRENT CAIN. ne @ % + 2 s 4 5S 6 7 ® ‘Ol 0S 1 2 10 30100 300 cuurcosum uso ee cuuscon oom ie wa 4 Ver (sat) - Ic VBE(sat) — Ic a EA wee Bo 23 4 dl an bs iz as Be e 2 & 36 ‘ras 100100 30 ‘bros 80100 0 cauncrn comer ean cuarrn comets 1c ws 1B - VBE fr - Ic ‘coMMON EMITTER Voe=10v sist counon errrer | Vor=6¥ TRANSITION FREQUENCY atin a a eT) a a ) SLEMITTER VOLTAGE Vag () [MITER CURRENT Ip mA) Oe SRE a a eS F PRES a1, 8 ae Fe maple ou, Pome, No ePaEDIYe B,TOSBA implation of otherwic Under any intelectual property or othe rights of TOSHIBA CORPORATION or others. ne No lcenat & gran i © The Itormation cmtames herein moje! to change wihout rove 7997-04-10 2/3TOSHIBA 2SC1815 h PARAMATER ~ Ic h PARAMATER ~ Vor ‘COMMON EMITTER ON ‘couMON EMITTER Ig=2mA Tu=26'C fo270He i ‘ci Me 2 eg X10-4 Toe is 1 a0 0 COLLECTOR CURRENT Ig mA) COLLECTOR-EMITTER VOLTAGE Vor () Po - Te ” ‘COLLECTOR POWER DISSIEATION AMBIENT TEMPERATURE Ta (0) 1997-04-10 3/3