SILICON NEN TRIPLE DIFFUSED TYPE (PCT PROCESS)
AUDIO FREQUENOY POWER AMPLIFIER APPLICATIONS .
2SD1052A
Unit in mm
FEATURES
+ Wiigh DC Current Gain of 400 to 1200 at
Voge5V, Tcn0.5A
+ low Vou(aat) of 1.0 (MAK) at 1
+ Collector Pover Dissipation of 30¥ at Tea25%
Ay Tye0.028
Maxroent RATINGS _(Ta=25%C)
cuncrnstie —[snaot | aarna [oar
Geticater-tese Voltage | Yeno [30 | 4
Getieeteraaitier Voltage | Vero | 30 |W] i
attter-Base Voltage YED0 77] 8 Auge 7
Cottestor Current ra ape] + al
ase Current mes] ane
Collector Pores [Rate 1 £ Cottman cum am)
, vise
Dissipation Ten25°O. 7 30
Tanotion Touperatare 5 ie | eae
‘Storage Temperature Range Tste =35-150 | °C TOSHIBA 210A1A
Vounting HAE Wo.AC75
ELECTRICAL CHARACTERISTICS (Ta=25°C) re
cusiuemmaistie | Snaol [waar Gooition [win [3h [oc Ba
Tallvotor ouemott coreent | Howe = [=i ae
aktter Gat-ott Cureent | Teno STEP xt
Colisetar-Bniticr os =a
Gotiestor-Sot ar "Frames rosont, 9-0 30 Y
Be Current an a 76 |= ia
Collector-Emittor _
setaretion Toltage Yor(eee) = [o25]a0 |v
Sast-nittor Voltage YE = for [ae
Presaition Preqveney tr Sof i0 | = pits
Coltector Output CapacTeance] cop = [te [=p or
rora-on tim | ton ~ 20]
Switching inelatorane Time | tatg ~ [ao] | a
fun tine | te | tppeeasen = fae] =
pty oven