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SILICON NEN TRIPLE DIFFUSED TYPE (PCT PROCESS) AUDIO FREQUENOY POWER AMPLIFIER APPLICATIONS . 2SD1052A Unit in mm FEATURES + Wiigh DC Current Gain of 400 to 1200 at Voge5V, Tcn0.5A + low Vou(aat) of 1.0 (MAK) at 1 + Collector Pover Dissipation of 30¥ at Tea25% Ay Tye0.028 Maxroent RATINGS _(Ta=25%C) cuncrnstie —[snaot | aarna [oar Geticater-tese Voltage | Yeno [30 | 4 Getieeteraaitier Voltage | Vero | 30 |W] i attter-Base Voltage YED0 77] 8 Auge 7 Cottestor Current ra ape] + al ase Current mes] ane Collector Pores [Rate 1 £ Cottman cum am) , vise Dissipation Ten25°O. 7 30 Tanotion Touperatare 5 ie | eae ‘Storage Temperature Range Tste =35-150 | °C TOSHIBA 210A1A Vounting HAE Wo.AC75 ELECTRICAL CHARACTERISTICS (Ta=25°C) re cusiuemmaistie | Snaol [waar Gooition [win [3h [oc Ba Tallvotor ouemott coreent | Howe = [=i ae aktter Gat-ott Cureent | Teno STEP xt Colisetar-Bniticr os =a Gotiestor-Sot ar "Frames rosont, 9-0 30 Y Be Current an a 76 |= ia Collector-Emittor _ setaretion Toltage Yor(eee) = [o25]a0 |v Sast-nittor Voltage YE = for [ae Presaition Preqveney tr Sof i0 | = pits Coltector Output CapacTeance] cop = [te [=p or rora-on tim | ton ~ 20] Switching inelatorane Time | tatg ~ [ao] | a fun tine | te | tppeeasen = fae] = pty oven

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