Assignment – I

Subject: Review of PN junction, MOSFET

1. A plane-abrupt PN junction in silicon with doping densities NA = 8 ×1015 atoms/cm3 and ND = 1017
atoms/cm3.
a. Calculate the built-in potential, depletion-layer depths, and maximum field in Assume a
reverse bias of 5 V.
b. Repeat (a) for zero external bias and 0.3 V forward bias.
c. Calculate the zero-bias junction capacitance and also calculate the value at 5 V reverse
bias and 0.3 V forward bias. Assume a junction area of 2 × 10−5 cm2.

2. An NMOS transistor has parameters W =10 m, L = 1 m, k′ = 194 A/V2, λ = 0.024 V−1, tox = 80
A˚, φf = 0.3 V, Vt0 = 0.6 V, and NA = 5 × 1015 atoms/cm3.
a. Sketch the ID-VDS characteristics for VDS from 0 to 3 V and VGS = 0.5 V, 1.5 V, and 3 V.
Assume VSB = 0.
b. Sketch the ID-VGS characteristics for VDS = 2 V as VGS varies from 0 to 2 V with VSB = 0, 0.5
V, and 1 V.
c. Derive and sketch the complete small-signal equivalent circuit for the device of (a) with
VGS = 1 V, VDS = 2 V, and VSB = 1 V. Use ψ0 = 0.7 V, Csb0 = Cdb0 = 20 fF, and Cgb = 5 fF.
Overlap capacitance from gate to source and gate to drain is 2 fF.
d. Use the device data of (a) and (c) to calculate the frequency of unity current gain of this
transistor with VDS = 3 V, VSB = 0 V, VGS = 1 V, 1.5 V, and 2 V.