FDS7088SN3

August 2004

FDS7088SN3
30V N-Channel PowerTrench SyncFET™
General Description Features
The FDS7088SN3 is designed to replace a single SO-8 • 21 A, 30 V RDS(ON) = 4.0 mΩ @ VGS = 10 V
FLMP MOSFET and Schottky diode in synchronous
DC:DC power supplies. This 30V MOSFET is designed RDS(ON) = 4.9 mΩ @ VGS = 4.5 V
to maximize power conversion efficiency, providing a
low RDS(ON) and low gate charge. The FDS7088SN3 • High performance trench technology for extremely
includes an integrated Schottky diode using Fairchild’s low RDS(ON)
monolithic SyncFET technology. The performance of
the FDS7088SN3 as the low-side switch in a • High power and current handling capability
synchronous rectifier is close to the performance of the
FDS7088N3 in parallel with a Schottky diode.
• Fast switching
Applications • FLMP SO-8 package: Enhanced thermal
• DC/DC converter performance in industry-standard package size
• Motor drives

Bottom-side
Drain Contact
5 4

6 3

7 2

8 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) 21 A
– Pulsed 60
PD Power Dissipation for Single Operation (Note 1a) 3.0 W
(Note 1b) 1.7
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 0.5 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS7088SN3 FDS7088SN3 13’’ 12mm 2500 units

2004 Fairchild Semiconductor Corporation FDS7088SN3 Rev B (W)

 FDS7088SN3
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
Drain–Source Breakdown
BVDSS VGS = 0 V, ID = 1 mA 30 V
Voltage
∆BVDSS Breakdown Voltage Temperature
ID = 15 mA, Referenced to 25°C 28 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.5 3 V
∆VGS(th) Gate Threshold Voltage ID = 15 mA, Referenced to 25°C
–3 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = 10 V, ID = 21 A 3.4 4.0 mΩ
On–Resistance VGS = 4.5 V, ID = 19 A 4.0 4.9
VGS = 10 V, ID = 21 A, TJ = 125°C 5
gFS Forward Transconductance VDS = 10 V, ID = 21 A 85 S

Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, V GS = 0 V, 3230 pF
Coss Output Capacitance f = 1.0 MHz 890 pF
Crss Reverse Transfer Capacitance 300 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.6 Ω

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time VDD = 15 V, ID = 1 A, 20 32 ns
VGS = 10 V, RGEN = 6 Ω
tr Turn–On Rise Time 21 34 ns
td(off) Turn–Off Delay Time 45 72 ns
tf Turn–Off Fall Time 33 53 ns
Qg(TOT) Total Gate Charge at VGS=10V VDD = 15 V, ID = 10 A 57 80 nC
Qg Total Gate Charge VDD = 15 V, ID = 10 A 31 44 nC
VGS = 5 V
Qgs Gate–Source Charge 8 nC
Qgd Gate–Drain Charge 10 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Schottky Diode Forward Current 4.3 A
Drain–Source Schottky Diode
VSD VGS = 0 V, IS = 4.3 A (Note 2) 0.4 0.7 V
Forward Voltage
tRR Reverse Recovery Time I F = 21 A 28 ns
diF/dt = 300 A/us
QRR Reverse Recovery Charge 29 nC

Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 40°C/W when b) 85°C/W when mounted on

mounted on a 1in2 pad a minimum pad of 2 oz
of 2 oz copper copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS7088SN3 Rev B (W)

 FDS7088SN3
Typical Characteristics
60 2
VGS = 10V 3.5V 3.0V VGS = 3.5V

DRAIN-SOURCE ON-RESISTANCE
6.0V 1.8
ID, DRAIN CURRENT (A)

4.5V

RDS(ON), NORMALIZED
40 1.6

3.5V
1.4
4.0V
20 1.2 4.5V
2.5V 5.0V
6.0V
1 10V

0 0.8
0 0.25 0.5 0.75 1 0 10 20 30 40 50 60
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.012
ID = 21A
VGS = 10V ID = 10.5A
DRAIN-SOURCE ON-RESISTANCE

1.4 RDS(ON), ON-RESISTANCE (OHM) 0.01

RDS(ON), NORMALIZED

1.2 0.008

o
TA = 125 C
1 0.006

0.8 0.004
o
TA = 25 C

0.6 0.002
-50 -25 0 25 50 75 100 125 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with

withTemperature. Gate-to-Source Voltage.

60 100
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)

50 10
ID, DRAIN CURRENT (A)

o
TA = 125 C
40 1
o
25 C
30 0.1 o
o -55 C
TA =125 C o
-55 C
20 0.01

10 0.001
25oC

0 0.0001
1.5 1.75 2 2.25 2.5 2.75 3 0 0.2 0.4 0.6 0.8 1
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS7088SN3 Rev B (W)

 FDS7088SN3
Typical Characteristics
10 5000
f = 1MHz
ID = 21A VGS = 0 V
VGS, GATE-SOURCE VOLTAGE (V)

8 4000
VDS = 10V

CAPACITANCE (pF)
20V
6 3000
Ciss

15V
4 2000
Coss

2 1000

Crss
0 0
0 10 20 30 40 50 60 0 5 10 15 20
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000 50
RDS(ON) LIMIT SINGLE PULSE

P(pk), PEAK TRANSIENT POWER (W)

RθJA = 85°C/W
100 40 TA = 25°C
100µs
ID, DRAIN CURRENT (A)

1ms
10ms
10 100ms 30
1s
10s
DC
1 20
VGS = 10V
SINGLE PULSE
0.1 RθJA = 85oC/W 10
o
TA = 25 C

0.01
0
0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1.00
r(t), NORMALIZED EFFECTIVE TRANSIENT

D = 0.5

RθJA(t) = r(t) * RθJA

0.2
RθJA = 85 °C/W
THERMAL RESISTANCE

0.10 0.1

0.05
P(pk)
0.02
t1
0.01 t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE

0.00
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDS7088SN3 Rev B (W)

 FDS7088SN3
Typical Characteristics (continued)

SyncFET Schottky Body Diode

Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in Schottky barrier diodes exhibit significant leakage at high
parallel with PowerTrench MOSFET. This diode exhibits temperature and high reverse voltage. This will increase
similar characteristics to a discrete external Schottky diode the power in the device.
in parallel with a MOSFET. Figure 12 shows the reverse
recovery characteristic of the FDS7088SN3.
0.1

IDSS, REVERSE LEAKAGE CURRENT (A)

o
TA = 125 C
0.01

TA = 100oC
0.001
0.08A/div

0.0001

TA = 25oC

0.00001
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)

Figure 14. SyncFET body diode reverse leakage

12.5 nS/div versus drain-source voltage and temperature

Figure 12. FDS7088SN3 SyncFET body

diode reverse recovery characteristic.

For comparison purposes, Figure 13 shows the reverse

recovery characteristics of the body diode of an equivalent
size MOSFET produced without SyncFET (FDS7088N3).
0.08A/div

12.5 nS/div

Figure 13. Non-SyncFET (FDS7088N3) body

diode reverse recovery characteristic.

FDS7088SN3 Rev B (W)

 FDS7088SN3
Dimensional Outline and Pad Layout

FDS7088SN3 Rev B (W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST ISOPLANAR™ Power247™ SuperFET™
ActiveArray™ FASTr™ LittleFET™ PowerSaver™ SuperSOT™-3
Bottomless™ FPS™ MICROCOUPLER™ PowerTrench SuperSOT™-6
CoolFET™ FRFET™ MicroFET™ QFET SuperSOT™-8
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with instructions for use provided in the labeling, can be effectiveness.
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user.
PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I11