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DIFFUSION IN SOLIDS
ISSUES TO ADDRESS...
• How does diffusion occur?
Chapter 5 - 1
DIFFUSION
Chapter 5 - 2
DIFFUSION DEMO
• Glass tube filled with water.
• At time t = 0, add some drops of ink to one end
of the tube.
• Measure the diffusion distance, x, over some time.
• Compare the results with theory.
Chapter 5 - 3
DIFFUSION: THE PHENOMENA (1)
Interdiffusion:
•Atoms of one metal diffuse into another.
•In an alloy, atoms tend to migrate from regions of large concentration.
Adapted from
Figs. 5.1 and
5.2, Callister
6e.
100%
0
Concentration Profiles
Chapter 5 - 4
DIFFUSION: THE PHENOMENA (2)
Self-diffusion:
•All atoms exchanging positions are of the same type.
•In an elemental solid, atoms also migrate.
C
A
D
B
Chapter 5 - 5
DIFFUSION MECHANISMS
For an atom to make a move, two conditions must be
met
Chapter 5 - 6
DIFFUSION SIMULATION
• Simulation of
interdiffusion
across an interface:
• Rate of substitutional
diffusion depends on:
--vacancy concentration
--frequency of jumping.
Chapter 5 - 7
DIFFUSION MECHANISMS
Substitutional Diffusion:
• applies to substitutional impurities
• atoms exchange with vacancies
• rate depends on:
--number of vacancies
--activation energy to exchange.
Chapter 5 - 8
DIFFUSION MECHANISMS
Vacancy Diffusion:
• involves the interchange of an atom from a normal lattice
position
Chapter 5 - 9
DIFFUSION MECHANISMS
Interstitial Diffusion:
• involves the atoms that migrate from an interstitial position
to a neighboring one that is empty
Position of interstitial
Position of interstitial
atom after diffusion
atom before diffusion
Chapter 5 - 10
INTERSTITIAL SIMULATION
• Applies to interstitial
impurities.
• More rapid than
vacancy diffusion.
• Simulation:
--shows the jumping of a
smaller atom (gray) from
one interstitial site to
another in a BCC
structure. The
interstitial sites
considered here are
at midpoints along the (Courtesy P.M. Anderson)
Chapter 5 - 12
PROCESSING USING DIFFUSION (2)
• Doping Silicon with P for n-type semiconductors:
• Process:
1. Deposit P rich
layers on surface.
silicon
Fig. 18.0,
2. Heat it. Callister 6e.
3. Result: Doped
semiconductor
regions.
silicon
Chapter 5 - 13
DOPING
• What is Doping?
• Doping is the process of adding some
impurity atoms in the semi conductor.
These impurity atoms are known as
dopants. After addition of these dopants
some of the properties of the conductors can
be changed according to our need.
Chapter 5 - 14
DOPING
Basic conditions that are required for the doping
process are given below:
1. The atom which is to be doped in the crystal
must be placed at the position same as that of the
position of the semiconductor atom.
2. There should be no distortion in the crystal after
the insertion of the dopants.
3. The size of the dopants should be exactly same as
that of the size of the atom of the crystal.
4. In a crystal the percentage of doping should not
be more than one percent.
Chapter 5 - 15
DOPING
• Directional Quantity
Position, x
• Fick's First Law:
dC
• Apply Fick's First Law: J x D
dx
dC dC
• If Jx)left = Jx)right , then
dx left dx right
• Q: How much
carbon transfers
from the rich to
the deficient side?
Chapter 5 - 21
NON STEADY STATE DIFFUSION
• Concentration profile,
C(x), changes
w/ time.
• Governing Eqn.:
Chapter 5 - 22
TABULATION OF ERROR FUNCTION VALUES
z erf (z) z erf (z) z erf (z)
0 0 0.55 0.5633 1.3 0.9340
0.025 0.0282 0.60 0.6039 1.4 0.9523
0.05 0.0564 0.65 0.6420 1.5 0.9661
0.10 0.1125 0.70 0.6778 1.6 0.9763
0.15 0.1680 0.75 0.7112 1.7 0.9838
0.20 0.2227 0.80 0.7421 1.8 0.9891
0.25 0.2763 0.85 0.7707 1.9 0.9928
0.30 0.3286 0.90 0.7970 2.0 0.9953
0.35 0.3794 0.95 0.8209 2.2 0.9981
0.40 0.4284 1.0 0.8427 2.4 0.9993
0.45 0.1125 1.1 0.8802 2.6 0.9998
0.50 0.5205 1.2 0.9103 2.8 0.9999
Chapter 5 - 23
SAMPLE PROBLEM U1
C(x,t)
Cs
t3 Adapted from
t2 Fig. 5.5,
t1 Callister 6e.
t
Co o
position, x
• General solution:
"error function"
Values calibrated in Table 5.1, Callister 6e.
Chapter 5 - 26
PROCESSING QUESTION
• Copper diffuses into a bar of aluminum.
• 10 hours at 600C gives desired C(x).
• How many hours would it take to get the same C(x)
if we processed at 500C?
Key point 1: C(x,t500C) = C(x,t600C).
Key point 2: Both cases have the same Co and Cs.
• Result: Dt should be held constant.
Note: values
• Answer: of D are
provided here.
Chapter 5 - 27
DIFFUSION DEMO: ANALYSIS
• The experiment: we recorded combinations of
t and x that kept C constant.
C(x i , t i ) Co x
1 erf i = (constant here)
Cs Co
2 Dt i
Chapter 5 - 28
DATA FROM DIFFUSION DEMO
• Experimental Data:
Adapted from Fig. 5.7, Callister 6e. (Date for Fig. 5.7 taken from E.A.
Chapter 5 - 30
Brandes and G.B. Brook (Ed.) Smithells Metals Reference Book, 7th
ed., Butterworth-Heinemann, Oxford, 1992.)
SUMMARY:
STRUCTURE & DIFFUSION
Diffusion FASTER for... Diffusion SLOWER for...
• cations • anions