APM9928

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features Pin Description

• N-Channel 5  & ,

20V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V / % ,

RDS(ON)=50mΩ(typ.) @ VGS=3.0V 5 ! $ ,

• P-Channel / " # ,

-20V/-3.2A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V

SO-8
RDS(ON)=120mΩ(typ.) @ VGS=-3.0V
• Super High Dense Cell Design for Extremely Low
, , 5
RDS(ON)
• Reliable and Rugged
• SO-8 Package
/
/

Applications
5 , ,

• Power Management in Notebook Computer , N-Channel MOSFET P-Channel MOSFET

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

APM9928
Package Code
K : SO-8
Handling Code
Operation Junction Temp. Range
Temp. Range C : -55 to 150°C
Handling Code
Package Code TR : Tape & Reel

APM9928 K : APM9928
XXXXX XXXXX - Date Code

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

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 APM9928

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter N-Channel P-Channel Unit

VDSS Drain-Source Voltage 20 -20
V
VGSS Gate-Source Voltage ±16 ±16
ID* Maximum Drain Current – Continuous 5 3.2
A
IDM Maximum Drain Current – Pulsed 10 -10
TA=25°C 2.5 2.5
PD Maximum Power Dissipation W
TA=100°C 1.0 1.0
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
RθjA Thermal Resistance – Junction to Ambient 50 °C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM9928
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static
N-Ch 20
Drain-Source Breakdown
BVDSS VGS=0V , IDS=250µA V
Voltage P-Ch -20
VDS=16V , VGS=0V N-Ch 1
Zero Gate Voltage Drain
IDSS µA
Current VDS=-16V , VGS=0V P-Ch -1
VDS=VGS , IDS=250µA N-Ch 0.7 0.9 1.5
VGS(th) Gate Threshold Voltage V
VDS=VGS , IDS=-250µA P-Ch -0.7 -0.9 -1.5
N-Ch ±100
IGSS Gate Leakage Current VGS=±16V , VDS=0V nA
P-Ch ±100
VGS=4.5V , IDS=5.0A 35 45
N-Ch
Drain-Source On-state VGS=3.0V , IDS=3.9A 50 60
RDS(ON)= mΩ
Resistance VGS=-4.5V , IDS=-3.2A 80 100
P-Ch
VGS=-3.0V , IDS=-2.0A 120 150
ISD=1.7A , VGS=0V N-Ch 0.8 1.3
VSD= Diode Forward Voltage V
ISD=-1.8A , VGS=0V P-Ch -0.8 -1.3

Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

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 APM9928

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

APM9928
Symbol Parameter Test Condition Unit
Min. Typ. Max.
>
Dynamic
N-Channel N-Ch 4.7 7
Q g Total Gate Charge
VDS=10V , IDS= 1A P-Ch 3.9 6
VGS=4.5V  N-Ch 0.72
Qgs Gate-Source Charge nC
P-Channel P-Ch 1
VDS=-10V , IDS=-1A N-Ch 0.96
Qgd Gate-Drain Charge
VGS=-4.5V  P-Ch 1.4
N-Channel N-Ch 12 24
td(ON) Turn-on Delay Time
VDD=10V , IDS=1A , P-Ch 21 40
VGEN=4.5V , RG=10Ω N-Ch 8 17
T r Turn-on Rise Time
P-Ch 45 83
ns
P-Channel N-Ch 32 60
td(OFF) Turn-off Delay Time
VDD=-10V , IDS=-1A , P-Ch 36 70
VGEN=-4.5V , RG=10Ω N-Ch 11 22
T f Turn-off Fall Time  P-Ch 20 38
N-Ch 376
Ciss Input Capacitance
P-Ch 495
VGS=0V
N-Ch 115
Coss Output Capacitance VDS=15V pF
P-Ch 130
Frequency=1.0MHz
N-Ch 58
Crss Reverse Transfer Capacitance
P-Ch 60
 Notes
b
: Guaranteed by design, not subject to production testing

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 APM9928

Typical Characteristics
N-Channel

Output Characteristics Transfer Characteristics

 
20 20
VGS=4,5,6,7,8,9,10V
VGS=3V

15 15

ID-Drain Current (A)

ID-Drain Current (A)

VGS=2.5V
10 10


 TJ=125°C
5 VGS=2V 5 TJ=-55°C
TJ=25°C

VGS=1.5V
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current

 
1.50 0.07
IDS=250uA
1.25 0.06
VGS(th)-Threshold Voltage (V)

(Ω)

VGS=4.5V
RDS(ON)-On-Resistance

1.00 0.05
(Normalized)

0.75 0.04
VGS=10V





0.50 0.03

0.25 0.02

0.00 0.01
-50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10

Tj - Junction Temperature
 (°C) ID - Drain Current (A)

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 APM9928

Typical Characteristics (Cont.)

N-Channel

On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature

0.10
 
1.8
ID=5A VGS=4.5V
0.09 ID=5A
1.6

RDS(ON)-On-Resistance (Ω)
(Ω)

0.08
0.07 1.4
RDS(ON)-On-Resistance

(Normalized)
0.06
1.2
0.05



1.0


0.04
0.03 0.8
0.02
0.6
0.01
0.00 0.4
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C)

 

Gate Charge Capacitance

5

600
V,5=10 V Frequency=1MHz
VGS-Gate-Source Voltage (V)

I,5= 1 A 500
4

Ciss
Capacitance (pF)

400
3

300
2


200
Coss
1
100 Crss

0 0
0 1 2 3 4 5 0 5 10 15 20
QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V)

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 APM9928

Typical Characteristics (Cont.)

N-Channel

Source-Drain Diode Forward Voltage Single Pulse Power

 
20 30

10
25
IS-Source Current (A)

20

Power (W)
TJ=150°C TJ=25°C
15
1


10

0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 10 30
VSD -Source-to-Drain Voltage (V) Time(sec)

Normalized Thermal Transient Impedence, Junction to Ambient


2

1
Normalized Effective Transient

Duty Cycle=0.5
Thermal Impedance

D=0.2

D=0.1

0.1 D=0.05


D=0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
SINGLE PULSE

0.01
1E-4 1E-3 0.01 0.1 1 10 30

Square Wave Pulse Duration (sec)

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 APM9928

Typical Characteristics
P-Channel

Output Characteristics Transfer Characteristics

 
10 10
-V GS=4,5,6,7,8,9,10V

8 8

-ID-Drain Current (A)

-ID-Drain Current (A)

-V GS=3V 6
6



4 4 TJ=125°C

-V GS=2.5V TJ=-55°C
2 2 TJ=25°C

-V GS=2V
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
-VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current

 
1.50 0.20
-I DS=250uA
0.18
(Ω)
-VGS(th)-Threshold Voltage (V)

1.25
0.16
RDS(ON)-On-Resistance

0.14 -VGS=3V
1.00
(Normalized)

0.12
0.75 0.10
-VGS=4.5V






0.08
0.50
0.06

0.25
0.04
0.02
0.00 0.00
-50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10
Tj - Junction Temperature (°C) -ID - Drain Current (A)


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 APM9928

Typical Characteristics (Cont.)

P-Channel

On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature

 
0.20 1.8
-ID=3.2A -VGS=4.5V
0.18 -ID=3.2A
1.6

RDS(ON)-On-Resistance (Ω)
(Ω)

0.16
1.4
RDS(ON)-On-Resistance

0.14

(Normalized)
0.12 1.2

0.10 1.0





0.08
0.8
0.06
0.6
0.04

0.02 0.4
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

-VGS - Gate-to-Source Voltage (V)


TJ - Junction Temperature
 (°C)

Gate Charge Capacitance

5

800
Frequency=1MHz
-V,5=10 V
700
-VGS-Gate-Source Voltage (V)

-I,5= 1 A
4
600
Ciss
Capacitance (pF)

3 500

400
2


300

200 Coss
1
100 Crss

0 0
0 1 2 3 4 5 6 0 5 10 15 20
QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V)

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 APM9928

Typical Characteristics (Cont.)

P-Channel

Source-Drain Diode Forward Voltage Single Pulse Power

 
20 30

10
25
-IS-Source Current (A)

20

Power (W)
TJ=150°C TJ=25°C 15
1


10

0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 10 30
-VSD -Source-to-Drain Voltage (V) Time(sec)

Normalized Thermal Transient Impedence, Junction to Ambient


2

1
Normalized Effective Transient

Duty Cycle=0.5
Thermal Impedance

D=0.2

D=0.1

0.1 D=0.05


D=0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
SINGLE PULSE

0.01
1E-4 1E-3 0.01 0.1 1 10 30

Square Wave Pulse Duration (sec)

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 APM9928

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

0.015X45
E H

e1 e2

A1
A 1

L
0.004max.

Mi ll im et er s Inche s
Dim
Min. Max . Min. Max .
A 1. 35 1. 75 0. 053 0. 069
A1 0. 10 0. 25 0. 004 0. 010
D 4. 80 5. 00 0. 189 0. 197
E 3. 80 4. 00 0. 150 0. 157
H 5. 80 6. 20 0. 228 0. 244
L 0. 40 1. 27 0. 016 0. 050
e1 0. 33 0. 51 0. 013 0. 020
e2 1. 27BSC 0. 50BSC
φ 1 8° 8°

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 APM9928

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999
temperature

Peak temperature

183°C
Pre-heat temperature

Time
Classification Reflow Profiles

Convection or IR/ VPR

Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C) 120 seconds max
Temperature maintained above 183°C 60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds
Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate 6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature 6 minutes max.

Package Reflow Conditions

pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C

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 APM9928

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

Po P D
E
P1

F Bo
W

Ao D1 Ko

T2

J
C
A B

T1

Application A B C J T1 T2 W P E
330 ± 1 62 +1.5 12.75+ 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
0.15
SOP- 8 F D D1 Po P1 Ao Bo Ko t
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

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 APM9928

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8 12 9.3 2500

Customer Service

Anpec Electronics Corp.

Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

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