UNITIII RENEWABLE ENERGY RESOURCES Introduction: The energy resource ,which are continuously and freely produced in the nature and are not exhaustible are known as the renewable sources of energy. Eg, Solar energy, wind energy, tidal energy. biomass energy etc., SOLAR ENERGY: Solar energy is the energy obtained by capturing heat and light from the Sun. Energy from the sun is referred to as solar energy. Technology has provided a number of ways to utilize this abundant resource. It is considered a green technology because it does not emit greenhouse gases. Solar energy Is abundantly available and has been utilized since long. The sun is the ultimate source of all forms of energy available on the earth.PHYSICAL PROPERTIES OF SILICON 1. It is the II nd Abundant element in the earth crust. 2. It is metalloid and having brittle nature. 3. Itis usually tetravalent in its compound. 4. It is purely electropositive in its chemical behavior. 5.1 hexa-coordinated silicon compound. 6. It is an intrinsic semiconductor in its purest formCHEMICAL PROPERTIES OF SILICON 1 Siliconis similar to metals in its chemical behavior 2.Acc. To the metallic character, it forms tetra positive ions and various Covalent compounds. 3. Ithas electropositive constituent of oxy-acids or complex anions. 4. It forms various series of Hydrides, various series of Halides and many of series it contains oxides, which can have ionic or covalent properties.PRODUCTION OF SOLAR GRADE SILICON FROM QUARTZ The Silica is reduced( oxygen removed) through reaction with carbon In the form of coal, charcoal and heating to 1500-2000°C in an electric arc furnace SiO, + C ——> Si + CO; quartz The obtained liquid silicon collects in the bottom of the furnace and is then drained & cleaned after washed with HCI (anhydrous) at 300°C to form SiHCl3 Si + 3HCl —— > SiHCI, + Hy If any impurities like Fe, Al etc., present in silica then removed in this process The pure SiHCI3 is reacted with released Hydrogen at 1100°C for long time To produce a very pure form of silicon. 1100°C/long time SiHCI, +H) —--- > Si +3HCI This reaction takes place inside large vacuum chambers. It is poly crystalline silicon.MANUFACTURE OF PHOTOVOLTAIC CELL(@PV- CELL) Forthe manufacture of PV-cell, need very pure semiconductor grade polysilicon. A material processed from quartz and used extensively throughout the electronic Industry. The polysilicon is then heated to melting temperqture, and trace amount of boron are added to the melting to create a P-type semiconductor material. Here we should follow by growing a pure crystalline silicon ingot method from a seed crystal drawn from the molten polysilicon, where individual wafers can be used to clean the material and they are placed in a phosphorus diffusion furnace, creating a thin n-type semiconductor layer around the entire outer surface of the cell.Next an anti-reflective coating is applied to the top surface of the cell. An Aluminized conductive material is deposited on the back(positive) surface of each cell, Restoring the P-type properties of the back surface by displacing the diffused phosphorus layer. The tested cell connected to other cells to form cell circuits for assembly in PV-modules.SOLAR BATTERY - DOPING OF SILICON p- type and n — type semiconductors Solar battery exploits solar energy by conversionto electrical energy directly using photovoltaic cell(PV-cell). ‘The photovoltaic cell, in which a p-type semiconductor(such as Si doped with ‘B’ is in contact with an n-type semiconductor(such as Si doped with ‘P’). Due to close contact a limited extent of electrons(from the n-type semiconductor) and positive holes(from the p-type semiconductor) can cross the boundary or junction between the two types of semiconductor. However migration are very limited, because they tend to produce a separation of charge.p-type n-type hole depletion layer lectron S i ffusion potential (V,,) 3) EeFor example, the outer layer of p-type semiconductors struck by a beam of light from the sun. The electrons in the valence band in this layer can absorb some of this incident light energy and get promoted to the conduction band ie, this semiconductor layer now acts as an intrinsic semiconductor. Since the conduction electrons, unlike the positive holes, can easily cross the p-n junction into the n-type semiconductor, so a potential difference between two layers is created. A flow of electrons( ie., an electric current) is set up. The potential difference and hence, current increases as more solar energy(or solar light) falls on the surface of outer layer and excites more electrons. Thus when terminals attached to the p and n-layers are connected to an extemal circuit , electrons flow from n-layer to the p-layer, thereby generating an electric current. This type of device, which converts directly the solar energy to electrical energy, is called ‘Photovoltaic cell’. A large number of interconnected photovoltaic cell is called solar battery.ant reflecting sag Coating ——>} i + - @ ElectronIMPORTANCE OF SOLAR CELL Photovoltaic cells offer a limitless and environmental friendly source of electricity. It is very much useful in remote area, earth orbiting satellites, remote radiotelephones, water pumping applications. Solar cells in the form of solar panels are appearing on building roofs, where they are connected through an inverter to the electric grid. The main advantages of silicon as a PV-material are: * Silicon is much bigger atom. * itis cheap and second abundantly element on earth. * Itis non-toxic. * Light carries energy in to the cell * Silicon cells convert energy from the sunlight in to electric current.CJ MANUFACTURE OF SOLAR CELL- CHEMICAL VAPOUR DEPOSITION TECHNIQUE Itis a general technique for chemical vapour deposition. It is used to deposit layers of polycrystalline silicon, silicon dioxide and silicon nitride on the substrate silicon semiconductor. Some gases like Arsine, Phosphin¢ and Diborane form a layer on the Surface. CVD is accomplished by placing the substrate wafers in a reactor chamber And heating them to a certain temperature. Controlled amounts of silicon or nitride Source gases, usually carried by either nitrogen or hydrogen are added to the reactor. Dopant gases may also be added if desired. A reaction between thesource gases and ‘The wafer occurs, there by deposition the desired layer. Reaction temperatures between 500 - 11000C, and pressure ranging from atmospheric to low pressure, onused depending on the specific deposition.ADVANTAGES OF CVD: @ Versatile-it can deposit any element or compound. @High purity @High density @ Material formation well below the melting point @ Coating deposited by CVD are conformal and near net shape. @ Economical in productionAPPLICATIONS OF SOLAR ENERGY: Traditionally solar energy was used for drying clothes, food grains, preservation of eatables and for obtaining salt, some of the important energy harvesting devices from sun are: @ solar heat collectors @ solar cell lighting the house, to operate radio, TV, street lighting @ solar cooker @ solar water heater @ solar furnace etc.,